CN101796591B - 使用针对改进感测的不同参考电平的非易失性存储器中的粗略/精细编程验证 - Google Patents

使用针对改进感测的不同参考电平的非易失性存储器中的粗略/精细编程验证 Download PDF

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Publication number
CN101796591B
CN101796591B CN200880105358.3A CN200880105358A CN101796591B CN 101796591 B CN101796591 B CN 101796591B CN 200880105358 A CN200880105358 A CN 200880105358A CN 101796591 B CN101796591 B CN 101796591B
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programming
verify level
storage elements
voltage
level
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CN101796591A (zh
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李世俊
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SanDisk Technologies LLC
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SanDisk Corp
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Priority claimed from US11/773,035 external-priority patent/US7599224B2/en
Priority claimed from US11/773,032 external-priority patent/US7508715B2/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate

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CN200880105358.3A 2007-07-03 2008-07-02 使用针对改进感测的不同参考电平的非易失性存储器中的粗略/精细编程验证 Active CN101796591B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US11/773,035 2007-07-03
US11/773,032 2007-07-03
US11/773,035 US7599224B2 (en) 2007-07-03 2007-07-03 Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US11/773,032 US7508715B2 (en) 2007-07-03 2007-07-03 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
PCT/US2008/068988 WO2009006513A1 (en) 2007-07-03 2008-07-02 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing

Publications (2)

Publication Number Publication Date
CN101796591A CN101796591A (zh) 2010-08-04
CN101796591B true CN101796591B (zh) 2013-04-24

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EP (1) EP2165338B1 (enExample)
JP (1) JP5198563B2 (enExample)
KR (1) KR20100057784A (enExample)
CN (1) CN101796591B (enExample)
TW (1) TWI389124B (enExample)
WO (1) WO2009006513A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI720705B (zh) 2019-10-12 2021-03-01 大陸商長江存儲科技有限責任公司 對記憶體裝置進行編程的方法及相關記憶體裝置

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US8081514B2 (en) * 2009-08-25 2011-12-20 Sandisk Technologies Inc. Partial speed and full speed programming for non-volatile memory using floating bit lines
JP5002632B2 (ja) * 2009-09-25 2012-08-15 株式会社東芝 不揮発性半導体記憶装置
KR101658118B1 (ko) * 2010-06-10 2016-09-20 삼성전자 주식회사 반도체 메모리 장치, 및 이의 독출 및 검증 방법
KR101212745B1 (ko) 2010-09-30 2012-12-14 에스케이하이닉스 주식회사 플래시 메모리 장치 및 프로그램 검증 방법
KR101798013B1 (ko) * 2010-12-30 2017-11-16 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
KR101861084B1 (ko) 2011-07-11 2018-05-28 삼성전자주식회사 비휘발성 메모리 장치, 이의 동작 방법, 및 비휘발성 메모리 장치를 포함하는 전자 장치
KR101775660B1 (ko) 2011-09-29 2017-09-07 삼성전자주식회사 워드 라인 전압의 변화없이 상이한 문턱 전압들을 갖는 메모리 셀들을 읽는 방법 및 그것을 이용한 불 휘발성 메모리 장치
KR101881595B1 (ko) * 2011-12-22 2018-07-25 에스케이하이닉스 주식회사 불휘발성 메모리 장치 및 이의 소거 방법
KR102192539B1 (ko) * 2014-05-21 2020-12-18 삼성전자주식회사 반도체 장치 및 이의 프로그램 방법
CN109390030A (zh) * 2018-10-16 2019-02-26 长江存储科技有限责任公司 一种寄存器以及闪存单元的分组设备和方法
CN109979515B (zh) * 2019-03-25 2021-08-31 长江存储科技有限责任公司 一种存储器编程方法及相关装置
US10930355B2 (en) * 2019-06-05 2021-02-23 SanDiskTechnologies LLC Row dependent sensing in nonvolatile memory
US11682459B2 (en) * 2020-05-13 2023-06-20 Silicon Storage Technology, Inc. Analog neural memory array in artificial neural network comprising logical cells and improved programming mechanism

Citations (1)

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US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3631463B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
KR100496866B1 (ko) * 2002-12-05 2005-06-22 삼성전자주식회사 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법
US7139198B2 (en) 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
JP4271168B2 (ja) * 2004-08-13 2009-06-03 株式会社東芝 半導体記憶装置
JP4786171B2 (ja) * 2004-12-10 2011-10-05 株式会社東芝 半導体記憶装置
WO2006107651A1 (en) * 2005-04-01 2006-10-12 Sandisk Corporation Multi-state memory having data recovery after program fail

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
CN1973335A (zh) * 2004-05-05 2007-05-30 桑迪士克股份有限公司 升压以控制非易失性存储器的编程

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI720705B (zh) 2019-10-12 2021-03-01 大陸商長江存儲科技有限責任公司 對記憶體裝置進行編程的方法及相關記憶體裝置
US11024371B2 (en) 2019-10-12 2021-06-01 Yangtze Memory Technologies Co., Ltd. Method of programming memory device and related memory device
US11705190B2 (en) 2019-10-12 2023-07-18 Yangtze Memory Technologies Co., Ltd. Method of programming memory device and related memory device
US12159665B2 (en) 2019-10-12 2024-12-03 Yangtze Memory Technologies Co., Ltd. Method of programming memory device and related memory device

Also Published As

Publication number Publication date
EP2165338A1 (en) 2010-03-24
KR20100057784A (ko) 2010-06-01
EP2165338B1 (en) 2012-06-20
TW200910358A (en) 2009-03-01
WO2009006513A1 (en) 2009-01-08
TWI389124B (zh) 2013-03-11
JP5198563B2 (ja) 2013-05-15
CN101796591A (zh) 2010-08-04
JP2010532541A (ja) 2010-10-07

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