TWI389124B - 於非揮發性記憶體中使用不同參考位準以改良感測之粗略／精細程式化確認方法及系統 - Google Patents
於非揮發性記憶體中使用不同參考位準以改良感測之粗略／精細程式化確認方法及系統 Download PDFInfo
- Publication number
- TWI389124B TWI389124B TW97125067A TW97125067A TWI389124B TW I389124 B TWI389124 B TW I389124B TW 97125067 A TW97125067 A TW 97125067A TW 97125067 A TW97125067 A TW 97125067A TW I389124 B TWI389124 B TW I389124B
- Authority
- TW
- Taiwan
- Prior art keywords
- level
- voltage
- bit line
- storage elements
- stylization
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims description 340
- 238000000034 method Methods 0.000 title claims description 85
- 238000012790 confirmation Methods 0.000 claims description 114
- 238000003860 storage Methods 0.000 claims description 68
- 238000004891 communication Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 7
- 238000012512 characterization method Methods 0.000 claims description 6
- 230000000087 stabilizing effect Effects 0.000 claims 4
- 238000009826 distribution Methods 0.000 description 56
- 230000008569 process Effects 0.000 description 44
- 238000007667 floating Methods 0.000 description 29
- 238000010200 validation analysis Methods 0.000 description 11
- 238000012360 testing method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 101150104722 gpmI gene Proteins 0.000 description 4
- 238000007726 management method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 101100449303 Lactiplantibacillus plantarum (strain ATCC BAA-793 / NCIMB 8826 / WCFS1) gpmA1 gene Proteins 0.000 description 2
- 101100176422 Rhodopseudomonas palustris (strain ATCC BAA-98 / CGA009) gpmI gene Proteins 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 230000008520 organization Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
Landscapes
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/773,035 US7599224B2 (en) | 2007-07-03 | 2007-07-03 | Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
| US11/773,032 US7508715B2 (en) | 2007-07-03 | 2007-07-03 | Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200910358A TW200910358A (en) | 2009-03-01 |
| TWI389124B true TWI389124B (zh) | 2013-03-11 |
Family
ID=39760547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97125067A TWI389124B (zh) | 2007-07-03 | 2008-07-03 | 於非揮發性記憶體中使用不同參考位準以改良感測之粗略／精細程式化確認方法及系統 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2165338B1 (enExample) |
| JP (1) | JP5198563B2 (enExample) |
| KR (1) | KR20100057784A (enExample) |
| CN (1) | CN101796591B (enExample) |
| TW (1) | TWI389124B (enExample) |
| WO (1) | WO2009006513A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI819298B (zh) * | 2020-05-13 | 2023-10-21 | 美商超捷公司 | 包含邏輯單元之人工神經網路中之類比神經記憶體陣列及經改良之程式化機制 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8081514B2 (en) * | 2009-08-25 | 2011-12-20 | Sandisk Technologies Inc. | Partial speed and full speed programming for non-volatile memory using floating bit lines |
| JP5002632B2 (ja) * | 2009-09-25 | 2012-08-15 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR101658118B1 (ko) * | 2010-06-10 | 2016-09-20 | 삼성전자 주식회사 | 반도체 메모리 장치, 및 이의 독출 및 검증 방법 |
| KR101212745B1 (ko) | 2010-09-30 | 2012-12-14 | 에스케이하이닉스 주식회사 | 플래시 메모리 장치 및 프로그램 검증 방법 |
| KR101798013B1 (ko) * | 2010-12-30 | 2017-11-16 | 삼성전자주식회사 | 비휘발성 메모리 장치의 프로그램 방법 |
| KR101861084B1 (ko) | 2011-07-11 | 2018-05-28 | 삼성전자주식회사 | 비휘발성 메모리 장치, 이의 동작 방법, 및 비휘발성 메모리 장치를 포함하는 전자 장치 |
| KR101775660B1 (ko) | 2011-09-29 | 2017-09-07 | 삼성전자주식회사 | 워드 라인 전압의 변화없이 상이한 문턱 전압들을 갖는 메모리 셀들을 읽는 방법 및 그것을 이용한 불 휘발성 메모리 장치 |
| KR101881595B1 (ko) * | 2011-12-22 | 2018-07-25 | 에스케이하이닉스 주식회사 | 불휘발성 메모리 장치 및 이의 소거 방법 |
| KR102192539B1 (ko) * | 2014-05-21 | 2020-12-18 | 삼성전자주식회사 | 반도체 장치 및 이의 프로그램 방법 |
| CN109390030A (zh) * | 2018-10-16 | 2019-02-26 | 长江存储科技有限责任公司 | 一种寄存器以及闪存单元的分组设备和方法 |
| CN109979515B (zh) * | 2019-03-25 | 2021-08-31 | 长江存储科技有限责任公司 | 一种存储器编程方法及相关装置 |
| US10930355B2 (en) * | 2019-06-05 | 2021-02-23 | SanDiskTechnologies LLC | Row dependent sensing in nonvolatile memory |
| WO2021068231A1 (en) | 2019-10-12 | 2021-04-15 | Yangtze Memory Technologies Co., Ltd. | Method of programming memory device and related memory device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3631463B2 (ja) * | 2001-12-27 | 2005-03-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| KR100496866B1 (ko) * | 2002-12-05 | 2005-06-22 | 삼성전자주식회사 | 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법 |
| US7139198B2 (en) | 2004-01-27 | 2006-11-21 | Sandisk Corporation | Efficient verification for coarse/fine programming of non-volatile memory |
| US7023733B2 (en) * | 2004-05-05 | 2006-04-04 | Sandisk Corporation | Boosting to control programming of non-volatile memory |
| JP4271168B2 (ja) * | 2004-08-13 | 2009-06-03 | 株式会社東芝 | 半導体記憶装置 |
| JP4786171B2 (ja) * | 2004-12-10 | 2011-10-05 | 株式会社東芝 | 半導体記憶装置 |
| WO2006107651A1 (en) * | 2005-04-01 | 2006-10-12 | Sandisk Corporation | Multi-state memory having data recovery after program fail |
-
2008
- 2008-07-02 CN CN200880105358.3A patent/CN101796591B/zh active Active
- 2008-07-02 EP EP08772349A patent/EP2165338B1/en active Active
- 2008-07-02 JP JP2010515250A patent/JP5198563B2/ja active Active
- 2008-07-02 WO PCT/US2008/068988 patent/WO2009006513A1/en not_active Ceased
- 2008-07-02 KR KR1020107002519A patent/KR20100057784A/ko not_active Withdrawn
- 2008-07-03 TW TW97125067A patent/TWI389124B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI819298B (zh) * | 2020-05-13 | 2023-10-21 | 美商超捷公司 | 包含邏輯單元之人工神經網路中之類比神經記憶體陣列及經改良之程式化機制 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2165338A1 (en) | 2010-03-24 |
| KR20100057784A (ko) | 2010-06-01 |
| EP2165338B1 (en) | 2012-06-20 |
| CN101796591B (zh) | 2013-04-24 |
| TW200910358A (en) | 2009-03-01 |
| WO2009006513A1 (en) | 2009-01-08 |
| JP5198563B2 (ja) | 2013-05-15 |
| CN101796591A (zh) | 2010-08-04 |
| JP2010532541A (ja) | 2010-10-07 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |