KR20100056444A - 정전 방전 보호 디바이스 및 정전 방전 보호 디바이스를 포함하는 반도체 디바이스 제조 방법 - Google Patents

정전 방전 보호 디바이스 및 정전 방전 보호 디바이스를 포함하는 반도체 디바이스 제조 방법 Download PDF

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KR20100056444A
KR20100056444A KR1020107002262A KR20107002262A KR20100056444A KR 20100056444 A KR20100056444 A KR 20100056444A KR 1020107002262 A KR1020107002262 A KR 1020107002262A KR 20107002262 A KR20107002262 A KR 20107002262A KR 20100056444 A KR20100056444 A KR 20100056444A
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KR
South Korea
Prior art keywords
region
well device
conductivity type
silicon substrate
device region
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KR1020107002262A
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English (en)
Korean (ko)
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아크램 살맨
스테펜 비베
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20100056444A publication Critical patent/KR20100056444A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020107002262A 2007-06-29 2008-06-26 정전 방전 보호 디바이스 및 정전 방전 보호 디바이스를 포함하는 반도체 디바이스 제조 방법 KR20100056444A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/771,565 US8013393B2 (en) 2007-06-29 2007-06-29 Electrostatic discharge protection devices
US11/771,565 2007-06-29

Publications (1)

Publication Number Publication Date
KR20100056444A true KR20100056444A (ko) 2010-05-27

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ID=39689213

Family Applications (1)

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KR1020107002262A KR20100056444A (ko) 2007-06-29 2008-06-26 정전 방전 보호 디바이스 및 정전 방전 보호 디바이스를 포함하는 반도체 디바이스 제조 방법

Country Status (7)

Country Link
US (1) US8013393B2 (de)
EP (1) EP2160763A1 (de)
JP (1) JP5389022B2 (de)
KR (1) KR20100056444A (de)
CN (1) CN101720505A (de)
TW (1) TW200915537A (de)
WO (1) WO2009005695A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8405123B2 (en) * 2008-10-27 2013-03-26 National Semiconductor Corporation Split-gate ESD diodes with elevated voltage tolerance
US8686508B2 (en) 2009-09-03 2014-04-01 International Business Machines Corporation Structures, methods and applications for electrical pulse anneal processes
US8692290B2 (en) 2011-09-07 2014-04-08 International Business Machines Corporation Silicon controlled rectifier structure with improved junction breakdown and leakage control
FR2980039B1 (fr) 2011-09-12 2013-09-27 Commissariat Energie Atomique Transistor a effet de champ z2fet a pente sous le seuil verticale et sans ionisation par impact
FR2981796B1 (fr) 2011-10-21 2017-02-03 Commissariat Energie Atomique Cellule memoire dynamique munie d'un transistor a effet de champ a pente sous le seuil vertical
CN105097798A (zh) * 2014-05-22 2015-11-25 上海北京大学微电子研究院 Esd保护器件结构与系统
JP2016031943A (ja) * 2014-07-25 2016-03-07 ソニー株式会社 静電保護素子および静電保護回路
CN108878541B (zh) * 2017-05-08 2021-07-02 中芯国际集成电路制造(上海)有限公司 鳍片式二极管及其制造方法
US20210098987A1 (en) * 2019-09-26 2021-04-01 Priya Walimbe Electrostatic discharge protection for stacked-die system
TWI792295B (zh) 2021-05-04 2023-02-11 合晶科技股份有限公司 半導體基板及其製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5637900A (en) * 1995-04-06 1997-06-10 Industrial Technology Research Institute Latchup-free fully-protected CMOS on-chip ESD protection circuit
JP3363038B2 (ja) * 1996-09-18 2003-01-07 株式会社東芝 半導体記憶装置
US6015992A (en) * 1997-01-03 2000-01-18 Texas Instruments Incorporated Bistable SCR-like switch for ESD protection of silicon-on-insulator integrated circuits
JPH1154743A (ja) * 1997-07-29 1999-02-26 Toshiba Corp 半導体装置及びその製造方法
TW423156B (en) 1999-09-06 2001-02-21 Winbond Electronics Corp Electrostatic discharge protection circuit for SOI technique
US6594132B1 (en) 2000-05-17 2003-07-15 Sarnoff Corporation Stacked silicon controlled rectifiers for ESD protection
US6864536B2 (en) * 2000-12-20 2005-03-08 Winbond Electronics Corporation Electrostatic discharge protection circuit
TW511269B (en) 2001-03-05 2002-11-21 Taiwan Semiconductor Mfg Silicon-controlled rectifier device having deep well region structure and its application on electrostatic discharge protection circuit
JP5172056B2 (ja) * 2001-06-04 2013-03-27 ラピスセミコンダクタ株式会社 半導体装置
US6573566B2 (en) 2001-07-09 2003-06-03 United Microelectronics Corp. Low-voltage-triggered SOI-SCR device and associated ESD protection circuit
JP2003209185A (ja) * 2002-01-11 2003-07-25 Seiko Epson Corp 半導体装置
US6737682B1 (en) * 2002-07-30 2004-05-18 Taiwan Semiconductor Manufacturing Company High voltage tolerant and low voltage triggering floating-well silicon controlled rectifier on silicon-on-insulator for input or output
US6900970B2 (en) * 2003-01-22 2005-05-31 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor
JP4800605B2 (ja) * 2004-11-15 2011-10-26 Ｏｋｉセミコンダクタ株式会社 静電破壊保護回路
JP4696964B2 (ja) 2005-07-15 2011-06-08 ソニー株式会社 メモリ用の半導体装置
DE102005039365B4 (de) 2005-08-19 2022-02-10 Infineon Technologies Ag Gate-gesteuertes Fin-Widerstandselement, welches als pinch - resistor arbeitet, zur Verwendung als ESD-Schutzelement in einem elektrischen Schaltkreis und Einrichtung zum Schutz vor elektrostatischen Entladungen in einem elektrischen Schaltkreis
US7298008B2 (en) * 2006-01-20 2007-11-20 International Business Machines Corporation Electrostatic discharge protection device and method of fabricating same
DE102006022105B4 (de) 2006-05-11 2012-03-08 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis
DE102006023429B4 (de) * 2006-05-18 2011-03-10 Infineon Technologies Ag ESD-Schutz-Element zur Verwendung in einem elektrischen Schaltkreis

Also Published As

Publication number Publication date
WO2009005695A1 (en) 2009-01-08
US20090001472A1 (en) 2009-01-01
JP5389022B2 (ja) 2014-01-15
TW200915537A (en) 2009-04-01
US8013393B2 (en) 2011-09-06
JP2010532566A (ja) 2010-10-07
EP2160763A1 (de) 2010-03-10
CN101720505A (zh) 2010-06-02

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