KR20100030676A - 스퍼터링 방법 - Google Patents

스퍼터링 방법 Download PDF

Info

Publication number
KR20100030676A
KR20100030676A KR1020107002990A KR20107002990A KR20100030676A KR 20100030676 A KR20100030676 A KR 20100030676A KR 1020107002990 A KR1020107002990 A KR 1020107002990A KR 20107002990 A KR20107002990 A KR 20107002990A KR 20100030676 A KR20100030676 A KR 20100030676A
Authority
KR
South Korea
Prior art keywords
target
sputtering
time
power
processing substrate
Prior art date
Application number
KR1020107002990A
Other languages
English (en)
Korean (ko)
Inventor
마코토 아라이
준야 기요타
유우지 이치하시
타케시 코지마
Original Assignee
가부시키가이샤 알박
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 알박 filed Critical 가부시키가이샤 알박
Publication of KR20100030676A publication Critical patent/KR20100030676A/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
KR1020107002990A 2007-08-20 2008-08-20 스퍼터링 방법 KR20100030676A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007214098 2007-08-20
JPJP-P-2007-214098 2007-08-20

Publications (1)

Publication Number Publication Date
KR20100030676A true KR20100030676A (ko) 2010-03-18

Family

ID=40378205

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107002990A KR20100030676A (ko) 2007-08-20 2008-08-20 스퍼터링 방법

Country Status (5)

Country Link
JP (1) JP5322235B2 (ja)
KR (1) KR20100030676A (ja)
CN (1) CN101784694B (ja)
TW (1) TWI518194B (ja)
WO (1) WO2009025306A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101257359B1 (ko) * 2011-03-30 2013-04-23 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리장치 및 플라즈마 처리방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105671500B (zh) * 2011-04-26 2018-10-12 株式会社爱发科 阴极单元
CN102305460B (zh) * 2011-10-11 2014-06-18 北京卡林新能源技术有限公司 一种太阳能补蓄热风冷热泵设备的节能装置及节能系统
KR102376098B1 (ko) * 2018-03-16 2022-03-18 가부시키가이샤 알박 성막 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2836072B2 (ja) * 1988-05-30 1998-12-14 株式会社島津製作所 スパッタリング装置
JPH09217171A (ja) * 1996-02-15 1997-08-19 Anelva Corp Ｉｔｏ透明導電膜の作製方法
JP4780972B2 (ja) * 2004-03-11 2011-09-28 株式会社アルバック スパッタリング装置
KR101073420B1 (ko) * 2004-06-07 2011-10-17 가부시키가이샤 알박 마그네트론 스퍼터링 방법 및 마그네트론 스퍼터링 장치
JP4922581B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法
JP5000131B2 (ja) * 2005-12-26 2012-08-15 出光興産株式会社 透明電極膜及び電子機器
JP5016819B2 (ja) * 2006-01-11 2012-09-05 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP4963023B2 (ja) * 2006-01-11 2012-06-27 株式会社アルバック スパッタリング方法及びスパッタリング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101257359B1 (ko) * 2011-03-30 2013-04-23 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리장치 및 플라즈마 처리방법

Also Published As

Publication number Publication date
JP5322235B2 (ja) 2013-10-23
CN101784694B (zh) 2012-08-29
CN101784694A (zh) 2010-07-21
WO2009025306A1 (ja) 2009-02-26
TW200914640A (en) 2009-04-01
TWI518194B (zh) 2016-01-21
JPWO2009025306A1 (ja) 2010-11-25

Similar Documents

Publication Publication Date Title
JP5322234B2 (ja) スパッタリング方法及びスパッタリング装置
US8506771B2 (en) Bipolar pulsed power supply and power supply apparatus having plurality of bipolar pulsed power supplies connected in parallel with each other
JP4922581B2 (ja) スパッタリング装置及びスパッタリング方法
KR101135389B1 (ko) 스퍼터링 방법 및 그 장치
TWI414621B (zh) Sputtering target and sputtering method using the target
KR101050121B1 (ko) 스퍼터링 장치 및 스퍼터링 방법
JP2007186725A (ja) スパッタリング方法及びスパッタリング装置
KR101298166B1 (ko) 전원 장치
TWI433950B (zh) Film forming method
KR20100030676A (ko) 스퍼터링 방법
JP4320019B2 (ja) スパッタリング装置
JP5903217B2 (ja) マグネトロンスパッタ電極及びスパッタリング装置
TWI401334B (zh) Sputtering apparatus and sputtering method
KR101113123B1 (ko) 스퍼터링 방법
JP2013001943A (ja) スパッタリング装置
JP4889280B2 (ja) スパッタリング装置
JP2002256431A (ja) マグネトロンスパッタ装置
JPS63286572A (ja) プレ−ナマグネトロン方式のスパッタリング装置

Legal Events

Date Code Title Description
A201 Request for examination
AMND Amendment
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J201 Request for trial against refusal decision
AMND Amendment
B601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20120827

Effective date: 20130402