KR20100029346A - 반도체 박막 구조 및 그 형성 방법 - Google Patents
반도체 박막 구조 및 그 형성 방법 Download PDFInfo
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- KR20100029346A KR20100029346A KR1020080088091A KR20080088091A KR20100029346A KR 20100029346 A KR20100029346 A KR 20100029346A KR 1020080088091 A KR1020080088091 A KR 1020080088091A KR 20080088091 A KR20080088091 A KR 20080088091A KR 20100029346 A KR20100029346 A KR 20100029346A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims description 62
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 58
- 229910052799 carbon Inorganic materials 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 19
- 229910052594 sapphire Inorganic materials 0.000 claims description 14
- 239000010980 sapphire Substances 0.000 claims description 14
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 11
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000005496 eutectics Effects 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 41
- 229910002601 GaN Inorganic materials 0.000 description 40
- 230000007547 defect Effects 0.000 description 25
- 238000010586 diagram Methods 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 11
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 230000035515 penetration Effects 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000005452 bending Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000006557 surface reaction Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- OKTJSMMVPCPJKN-YPZZEJLDSA-N carbon-10 atom Chemical compound [10C] OKTJSMMVPCPJKN-YPZZEJLDSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (7)
- 기판 상에 형성되며 상기 기판과는 다른 이종의 화합물 반도체 완충층;탄소 함유층; 및화합물 반도체 에피층을 포함하며, 상기 탄소 함유층은 상기 완충층 내부 및 상기 에피층 내부 중 적어도 어느 한 곳에 삽입되어 있는 것을 특징으로 하는 반도체 박막 구조.
- 제1항에 있어서, 상기 탄소 함유층은 S:C (S : 상기 완충층과 에피층을 구성하는 반도체 물질)인 것을 특징으로 하는 반도체 박막 구조.
- 제1항 또는 제2항에 있어서, 상기 탄소 함유층은 탄소가 1018 ~ 1022 cm-3의 함량으로 인입된 것을 특징으로 하는 반도체 박막 구조.
- 제1항 또는 제2항에 있어서, 상기 탄소 함유층은 단일 혹은 다중 박막인 것을 특징으로 하는 반도체 박막 구조.
- 기판 상에 상기 기판과는 다른 이종의 화합물 반도체 완충층을 형성하는 단계; 및상기 완충층 상에 화합물 반도체 에피층을 형성하는 단계를 포함하며,상기 완충층의 성장시 및 에피층의 성장시 중 적어도 어느 한 때에 탄소 함유층을 삽입하는 것을 특징으로 하는 반도체 박막 구조 형성 방법.
- 제5항에 있어서, 상기 기판은 사파이어이고 상기 완충층 및 에피층은 GaN층이며 상기 탄소 함유층을 삽입하기 위해 다이메틸 하이드라진(DMHy; N2H4(CH3)2)을 추가 주입하는 것을 특징으로 하는 반도체 박막 구조 형성 방법.
- 제5항에 있어서, 상기 탄소 함유층은 M(CH3)x(M:metal) 또는 CxH2x+2 또는 (CH3)x기를 가지고 있는 유기 물질을 사용하여 형성하는 것을 특징으로 하는 반도체 박막 구조 형성 방법.
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KR1020080088091A KR101006480B1 (ko) | 2008-09-08 | 2008-09-08 | 반도체 박막 구조 및 그 형성 방법 |
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KR1020080088091A KR101006480B1 (ko) | 2008-09-08 | 2008-09-08 | 반도체 박막 구조 및 그 형성 방법 |
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KR20100029346A true KR20100029346A (ko) | 2010-03-17 |
KR101006480B1 KR101006480B1 (ko) | 2011-01-06 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2491920A (en) * | 2011-06-15 | 2012-12-19 | Mitsubishi Electric Corp | Method of manufacturing high resistance nitride buffer layers comprising high carbon impurity concentrations |
KR20190140690A (ko) * | 2018-06-12 | 2019-12-20 | 한국과학기술연구원 | Ⅲ-인화계 기판 상에 ⅲ-비화계 에피층을 성장하는 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3648386B2 (ja) | 1998-07-08 | 2005-05-18 | 株式会社東芝 | 半導体素子およびウェーハならびにそれらの製造方法 |
US6255198B1 (en) | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
KR100765386B1 (ko) | 2005-12-30 | 2007-10-10 | 서울옵토디바이스주식회사 | 질화 갈륨계 화합물 반도체 및 이의 제조 방법 |
JP5064824B2 (ja) * | 2006-02-20 | 2012-10-31 | 古河電気工業株式会社 | 半導体素子 |
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- 2008-09-08 KR KR1020080088091A patent/KR101006480B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2491920A (en) * | 2011-06-15 | 2012-12-19 | Mitsubishi Electric Corp | Method of manufacturing high resistance nitride buffer layers comprising high carbon impurity concentrations |
KR20190140690A (ko) * | 2018-06-12 | 2019-12-20 | 한국과학기술연구원 | Ⅲ-인화계 기판 상에 ⅲ-비화계 에피층을 성장하는 방법 |
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