KR20100020793A - Test socket for high-frequency semiconductor ic test - Google Patents

Abstract

PURPOSE: A test socket for testing a high-frequency semiconductor IC is provided to minimize an electric path between a semiconductor device and a socket substrate by using a metallic wire or metallic plate through the configuration of a rubber test socket. CONSTITUTION: A semiconductor test socket(100) includes a socket body(110), a conductive path forming unit(120) and a shielding unit(130). The socket body has elasticity and non-conductivity, and a conductive path forming unit is installed in the socket boy. In order to enable the electric flow between a lead terminal(11) of the semiconductor device and a test terminal(21) of a socket substrate(20), the conductivity path forming unit forms a conductive path by at least one metallic member(123). The shielding unit surrounds the outer line of the metallic member and shields the influence of the electromagnetic wave from the outside.

Description

TEST SOCKET FOR HIGH-FREQUENCY SEMICONDUCTOR IC TEST}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor test sockets, and more particularly, to high-frequency semiconductor tests used for inspecting electrical characteristics of radio frequency (RF) semiconductor device packages.

In general, the completed semiconductor device package undergoes an electrical inspection process before being provided to the user. In the electrical inspection process, a test socket is used to inspect electrical characteristics of a semiconductor device package.

Conventionally, test sockets for testing semiconductor devices having QFN, MLF, LGA, and BGA types include spring probe (pogo pin), plate pin (Stamping pin), and pressure sensitive conductive rubber (PCR). There was a way. When testing at high frequencies, such as RF (radio frequency) semiconductor devices, is required to minimize the electrical path, test sockets using short spring probes or plate pins of various shapes have been developed.

Recently, due to the fact that the short conductive path and the damage to the device ball can be minimized, the use of the pressure-conducting silicone rubber method using the silicone rubber as an elastomer has gradually spread, but it is the largest to be used for the test of the RF semiconductor device. There is a problem that the allowable current is small below 1A. In addition, there is a problem that noise and crosstalk occurs during the high frequency test.

The present invention has been made to solve the above problems, to provide a semiconductor test socket that can minimize the electrical path between the semiconductor device and the test substrate, and can maximize the allowable current required for testing the high frequency semiconductor device. There is a purpose.

Another object of the present invention is to provide a semiconductor test socket capable of minimizing noise and cross talk during high frequency semiconductor device testing.

The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

A semiconductor test socket according to an embodiment of the present invention for achieving the above object is provided in the socket body made of silicon rubber, and the socket body, the electrical flow between the lead terminal of the semiconductor device and the test terminal of the test substrate A conductive path forming portion for forming a conductive path by at least one metal member to enable this.

In addition, the conductive path forming unit is formed on at least one upper portion of the socket body, at least one first contact portion in electrical contact with the lead terminal, at least one lower portion of the socket body to correspond to the first contact portion, And a second contact portion in electrical contact with the test terminal, and a metal member electrically connecting the first contact portion and the second contact portion.

In addition, the metal member is preferably a metal wire or a metal plate material.

In addition, the socket body is preferably formed with at least one through-hole in which the metal member is inserted.

In addition, the silicon rubber is preferably filled between the through hole and the metal member.

In addition, it is preferable that a first insulator is coated on an area of the upper surface of the socket body where the first contact portion is not formed.

In addition, it is preferable that a second insulator is coated on an area of the lower surface of the socket body where the second contact portion is not formed.

In addition, it is preferable that the first contact portion protrude above the first insulator.

In addition, the lower portion of the second contact portion preferably protrudes from the second insulator.

In addition, it is preferable that a conductive plating layer including nickel is formed on the first contact portion.

In addition, the conductive (nickel) plating layer preferably includes a plurality of metal (nickel) balls.

In addition, the semiconductor test socket according to an embodiment of the present invention, preferably further comprises a shield provided on the socket body for the ground of the metal member.

In addition, the shield is preferably a ground plate which is inserted into the socket body to be disposed perpendicular to the metal member.

In addition, the ground plate is preferably formed with at least one ground hole in a position corresponding to the metal member.

In addition, the ground plate is preferably electrically connected to a ground wire formed around the metal member.

The semiconductor test socket according to another embodiment of the present invention for achieving the above object, at least one elastic body made of silicon, is inserted into the elastic body is capable of electrical flow between the lead terminal of the semiconductor device and the test terminal of the socket substrate And a second conductor forming a conductive path so that at least one hole into which the elastic body is inserted is formed and forming a ground of the first conductor.

The first conductor may include a first contact portion in electrical contact with the lead terminal at an upper end thereof, and a second contact portion in electrical contact with the test terminal at a lower end thereof.

In addition, the semiconductor test socket according to another exemplary embodiment of the present invention may include a first insulator applied to an upper region of the elastic body and the second conductor in which the first contact part is not formed, and the second contact part is not formed. It is preferable to further include a second insulator applied to the elastic region and the lower region of the second conductor.

In addition, the first conductor is preferably a metal wire or a metal sheet.

Specific details of other embodiments are included in the detailed description and drawings.

According to the semiconductor test socket and the manufacturing method of the present invention as described above has one or more of the following effects.

First, by constructing the body of the test socket with elastic silicone rubber and using a metal wire or metal plate as a conductive path, it is possible to minimize the electrical path between the semiconductor device and the socket substrate, the maximum required for testing high-frequency semiconductor devices It provides 3 ~ 5A of allowable current and can theoretically provide more than 40A.

Second, by providing a ground plate on the body of the test socket and grounding outside of each signal line, noise and crosstalk can be minimized when testing a high frequency semiconductor device.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, only the embodiments are to make the disclosure of the present invention complete, and the general knowledge in the art to which the present invention belongs It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, a semiconductor test socket and a method of manufacturing the same according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. For reference, in the following description of the present invention, if it is determined that a detailed description of related known functions or configurations may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.

1 is a cross-sectional view schematically showing a semiconductor test socket according to an embodiment of the present invention, FIGS. 2 and 3 are plan views of a semiconductor test socket, and FIGS. 4 and 5 are perspective views of the metal member shown in FIG. 1. 6 is an enlarged cross-sectional view of a portion 'A' of FIG. 1.

As illustrated in FIGS. 1 to 6, the semiconductor test socket 100 according to the exemplary embodiment includes a socket body 110, a conductive path forming unit 120, a shielding unit 130, and the like.

The socket body 110 is formed in the form of a block body having a cross section of a square or a circle (not shown), composed of an elastic body, and may be composed of silicone rubber.

The socket body 110 is formed with at least one through-hole 111 in which the metal member 123 to be described later is inserted. For example, the through hole 111 may have a circular cross section (see FIG. 2) or a quadrangular cross section (see FIG. 3), and the edge of the socket body 110 may correspond to the lead terminals 11 of the semiconductor device 10. A plurality of symmetrical to each other with respect to the opposite surface along the can be formed.

In this embodiment, the through-hole 111 and the metal member 123 may be filled with an elastic body having a predetermined elasticity and electrically having a non-conductive property. However, depending on the embodiment, the space between the through hole 111 and the metal member 123 may be left as an empty space.

The first insulator 141 is uniformly coated on a region where the first contact portion 121 to be described later is not formed on the upper surface of the socket body 110, and the second contact portion 122 is disposed on the lower surface of the socket body 110. The second insulator 142 is uniformly coated in a region where the cavities are not formed. The first insulator 141 and the second insulator 142 may be configured in the form of an insulating film such as a Teflon film or a polyimide film. For example, a hole may be formed in the first insulator 141, and a first contact portion 121 may be formed on the hole. In addition, a technical configuration in which a hole is formed in the second insulator 142 and a second contact portion 122 is formed in the formed hole may be selected.

The conductive path forming unit 120 is provided in the socket body 110 and has at least one electrical flow between the lead terminal 11 of the semiconductor device 10 and the test terminal 21 of the test substrate 20. The conductive path is formed by the metal member 123.

The conductive path forming part 120 may include a first contact part 121, a second contact part 122, a metal member 123, and the like.

The first contact portion 121 is formed at an upper portion of the through hole 111 of the socket body 110, and is electrically contacted with the lead terminal 11 when the electrical characteristic of the semiconductor device 10 is inspected.

Preferably, the first contact portion 121 protrudes above the first insulator 141.

The first contact portion 121 is a copper foil layer 121a applied to the upper inner circumferential surface of the through hole 111, a plating layer 121b applied to surround the copper foil layer 121a, and an upper surface of the plating layer 121b. It may be provided with a metal (nickel) layer 121c that is applied to protrude and contains a plurality of fine balls mainly composed of metal (nickel). Here, the metal layer 121c may be formed by coating a plurality of fine balls containing nickel as a main component on the upper surface of the plating layer 121b in a state where a magnet is positioned below and coating a surface thereof.

The second contact portion 122 is formed under the through hole 111 of the socket body 110 so as to correspond to the first contact portion 121, and the test terminal 21 and the test terminal 21 when the electrical characteristics of the semiconductor device 10 is tested. Electrical contact. The lower portion of the second contact portion 122 may protrude about 5 to 100 mm from the second insulator 142. For example, the second contact portion 122 may have the same technical configuration as the first contact portion 121. However, the direction in which each member protrudes from the second contact portion 122 is preferably configured to facilitate contact with the test terminal 21.

The metal member 123 is inserted into each through hole 111 and disposed in the vertical direction, and electrically connects the first contact portion 121 and the second contact portion 122. More specifically, the upper end portion of the metal member 123 is bonded to the plating layer 121b and the nickel layer 121c of the first contact portion 121, and the lower end portion is bonded to the second contact portion 122.

The metal member 123 has a thickness smaller than the inner diameter of the through hole 111, and is preferably formed to a thickness of 15 ~ 500 mm.

Since both ends of the metal member 123 are connected to the first contact portion 121 and the second contact portion 122, the metal member 123 may have a length longer than that of the socket body 110.

The metal member 123 may be made of any metal or alloy material having excellent ductility and tensile strength, such as Cu, BeCu, Ag, or Au. Accordingly, the maximum allowable current value required for the test can be provided over 10A.

The metal member 123 may be formed in various shapes, and may preferably be configured in the form of a metal plate 123a having a rectangular cross section (see FIG. 4) or a metal wire 123b having a circular cross section (see FIG. 5). have. In the case where the metal member 123 is a rectangular metal plate 123a, the metal plate 123a may be disposed in parallel with respect to the side surface of the socket body 110 (see FIGS. 2 and 3) or may be disposed at an arbitrary angle. (Not shown).

The shield 130 is provided in a shape surrounding the outer portion of the metal member 123. The shield 130 is electrically grounded and serves to block the metal member 123 from the outside. That is, through the configuration surrounding the outer portion of the metal member 123, which is a transmission line, the electromagnetic wave transmitted from the outside is shielded. As described above, the metal member 123 that transmits a high frequency signal has a very sensitive characteristic to external electromagnetic waves in a high frequency band. That is, a high frequency test signal is applied or a high frequency signal is transmitted from the lead terminal 11 to the metal member 123. The shielding unit 130 minimizes disturbance due to noise through shielding of electromagnetic waves.

The shielding part 130 may be configured as a ground plate inserted in a horizontal direction at an approximately middle portion of the socket body 110 to be disposed perpendicularly to the metal member 123.

FIG. 7 is a plan view illustrating the shield of FIG. 1 as a ground plate, and FIG. 8 is an exemplary view showing an example of a ground structure applied to the ground plate.

As shown in FIGS. 7 and 8, the ground plate 131 is formed in the same cross section as the socket body 110, for example, a cross section of a rectangle or a circle (not shown). The ground plate 131 may be made of a metal material such as stainless steel (SUS) or BeCu.

At least one ground hole 133 is formed in the ground plate 131 at a position corresponding to the through hole 111. In more detail, a plurality of ground holes 133 may be formed symmetrically with respect to the opposite surface along the edge of the ground plate 131. The ground hole 133 has a shape of a rectangle or a circle (not shown) in the same manner as the shape of the through hole 111, and is preferably formed larger than the through hole 111 to sufficiently accommodate the through hole 111. Do. In addition, the space between the ground hole 133 and the through hole 111 is filled with an insulating elastic member constituting the socket body.

Although not shown in the drawing, the ground plate 131 extends to the outer side of the socket body 110 and is connected to the socket housing.

Hereinafter, an operating state of a semiconductor test socket according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 9.

9 is a cross-sectional view illustrating an operating state of a semiconductor test socket according to an exemplary embodiment of the present invention.

The semiconductor test socket of the present invention is used to inspect the electrical characteristics of the semiconductor device for high frequency after the manufacturing process of the semiconductor device

More specifically, as shown in FIG. 9, when the high frequency semiconductor device 10 is seated on the semiconductor test socket 100, the lead terminals 11 of the semiconductor device 10 may be disposed on the upper portion of the socket body 110. Each of the first contacts 121 is formed to be in contact with each other.

When the semiconductor device is pressed further downward in this state, the test socket 100 descends downward and the second contacts 122 formed on the lower portion of the socket body 110 are connected to the test terminals 21 of the socket substrate 20. Contact with each other. At this time, the socket body 110 made of silicone rubber imparts a predetermined elasticity to the counterpart when the socket body 110 is in contact with the semiconductor element 10 and the socket substrate 20.

Since the first contact portion 121 and the second contact portion 122 are connected by a conductive metal member 123 such as a metal plate 123a or a metal wire 123b inserted into the through hole 111 of the socket body 110, The metal member 123 enables electrical flow between the lead terminal 11 of the semiconductor device 10 and the test terminal 21 of the socket substrate 20 to inspect the electrical characteristics of the high frequency semiconductor device. .

The present invention minimizes the electrical path between the high frequency semiconductor device 10 and the socket substrate 20 by using the metal plate 123a or the metal wire 123b as a conductive path, and the maximum required for testing the high frequency semiconductor device. Allowable current value can be provided above 10A.

In addition, the ground plate 131 may be provided on the socket body 110 and grounded outside of each signal line to minimize noise and crosstalk when testing a high frequency semiconductor device. Accordingly, in the case of high-frequency semiconductor test, it is possible to secure an excellent frequency band compared to the conventional pogo pin or plate pin.

10 is a schematic cross-sectional view of a semiconductor test socket according to another exemplary embodiment of the present invention.

As shown in FIG. 10, the semiconductor test socket 200 according to another exemplary embodiment of the present invention may include an elastic body 210, a first conductor 220, a second conductor 230, and a first insulator 240. And a second insulator 250.

In FIG. 10, except for configuring the majority of the body of the test socket except for the elastic body 210 into which the first conductor 220 is inserted, the second conductor 230 for ground signal processing is illustrated in FIG. 1. The same as the embodiment of the present invention described with reference to FIG. 9. Therefore, detailed description of the same configuration and operation as in the above embodiment will be omitted.

The elastic body 210 is made of silicone rubber having a predetermined elasticity, and has a circular or rectangular cross section.

The first conductor 220 is inserted into the elastic body 210 and forms a conductive path between the lead terminal 11 of the semiconductor device 10 and the test terminal 21 of the socket substrate 20. do.

The first conductor 220 may be formed in various shapes, and may be preferably in the form of a metal plate having a rectangular cross section (see FIG. 4) or a metal wire having a circular cross section (see FIG. 5).

The first conductor 220 has a first contact portion 221 in electrical contact with the lead terminal 11 at the upper end, and a second contact portion 222 in electrical contact with the test terminal 21 at the lower end. It is provided.

As described with reference to FIG. 6 in the above embodiment, the first contact portion 221 is a copper foil layer 121a and a copper foil layer 121a respectively applied to upper and lower peripheral surfaces of holes formed in the first insulator 240 to be described later. ) And a metal (nickel) layer 121c coated on the upper surface of the plating layer 121b and containing a plurality of fine balls containing nickel as a main component. Although not shown in the drawing, the second contact portion 222 is also preferably formed in the same manner as the components of the first contact portion 221.

The second conductor 230 has at least one hole 231 in which the elastic body 210 is inserted in the vertical direction. For example, the holes 231 may have a circular or rectangular cross section, and may be formed in symmetrical numbers with respect to the opposing surface along the edge to correspond to the lead terminals 11 of the semiconductor device 10.

The second conductor 230 is formed to a thickness of 0.5 ~ 6 mm, preferably made of a metal material such as SUS (Steel Use stainless) or BeCu.

The first insulator 240 is applied to the upper regions of the elastic body 210 and the second conductor 230 where the first contact portion 221 is not formed, and the second insulator 250 is formed by the second contact portion 222. It is applied in the form of an insulating film to the lower region of the elastic body 210 and the second conductor 230 not formed.

As a result, the configuration of FIGS. 1 to 10 has a configuration in which a conductor is formed outside the conductor that transmits a high frequency signal, and the formed conductor is grounded. Therefore, by shielding the high frequency signal transmitted through the conductor from the outside, it is possible to minimize the influence of the transmission line from the outside.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

1 is a cross-sectional view schematically illustrating a semiconductor test socket according to an exemplary embodiment of the present invention.

2 and 3 are plan views of a semiconductor test socket according to an exemplary embodiment of the present invention.

4 and 5 are perspective views of the metal member shown in FIG.

6 is an enlarged cross-sectional view of a portion 'A' of FIG. 1.

FIG. 7 is a plan view of the ground plate shown in FIG. 1. FIG.

8 is an exemplary diagram illustrating an example of a ground structure applied to a ground plate.

9 is a cross-sectional view illustrating an operating state of a semiconductor test socket according to an exemplary embodiment of the present invention.

10 is a schematic cross-sectional view of a semiconductor test socket according to another exemplary embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

100, 200: semiconductor test socket 110: socket body

111: through hole 120: conductive path forming unit

121: first contact portion 122: second contact portion

123: metal member 130: shield

131: ground plate 135: ground wire

141: first insulator 142: second insulator

210: elastic body 220: first conductor

230: second conductor

Claims (12)

A socket body having elasticity and non-conductivity; A conductive path forming unit provided in the socket body and forming a conductive path by at least one metal member to enable electrical flow between a lead terminal of the semiconductor device and a test terminal of the socket substrate; And And a shielding part surrounding an outer portion of the metal member and shielding the influence of electromagnetic waves from the outside. The method of claim 1, wherein the conductive path forming unit, At least one first contact portion formed on an upper portion of the socket body and in electrical contact with the lead terminal; At least one second contact portion formed below the socket body to correspond to the first contact portion and in electrical contact with the test terminal; And And a metal member electrically connecting the first contact portion and the second contact portion. The method according to claim 1 or 2, The metal member is a semiconductor test socket, characterized in that the metal wire or metal plate material. The method according to claim 1 or 2, And at least one through hole through which the metal member is inserted in the socket body. The method of claim 4, wherein The semiconductor test socket, characterized in that the elasticity between the through-hole and the metal member is filled with an electrically insulator. The method of claim 4, wherein The first contact portion or the second contact portion, A copper foil layer applied to the upper inner circumferential surface of the through hole; And A semiconductor test socket, characterized in that it comprises a plating layer applied in a form surrounding the copper foil layer. The method of claim 5, The first contact portion or the second contact portion, the semiconductor test socket further comprises a metal (nickel) layer is applied to protrude to the upper surface of the plating layer and contains a plurality of fine balls of nickel as the main component. The method of claim 1, The shield is a semiconductor test socket, characterized in that the ground plate is inserted into the socket body so as to be perpendicular to the metal member. At least one elastic body; A first conductor inserted into the elastic body and forming a conductive path between the lead terminal of the semiconductor device and the test terminal of the socket substrate; And At least one hole into which the elastic body is inserted is formed, and the semiconductor test socket includes a second conductor for shielding external electromagnetic waves with respect to the first conductor. The method of claim 9, The first conductor is a semiconductor test socket, characterized in that the upper end is provided with a first contact portion in electrical contact with the lead terminal, and the lower end has a second contact portion in electrical contact with the test terminal. The method of claim 10, The first contact portion or the second contact portion, A copper foil layer applied to the upper inner circumferential surface of the through hole; And A semiconductor test socket, characterized in that it comprises a plating layer applied in a form surrounding the copper foil layer. The method of claim 11, wherein the first contact portion or the second contact portion, And a metal (nickel) layer protruding from the upper surface of the plating layer and containing a plurality of fine balls containing nickel as a main component.

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