KR20090123017A - Cu-ni-si-based alloy for electronic material - Google Patents

Abstract

Disclosed is a Corson alloy having dramatically improved properties (e.g., high strength and high conductivity) which are achieved by allowing the effect of the addition of Cr to a Cu-Ni-Si-based alloy to exhibit more effectively. Specifically disclosed is a copper alloy for an electronic material, which comprises 1.0 to 4.5 mass% of Ni, 0.50 to 1.2 mass% of Si, 0.0030 to 0.3 mass% of Cr (provided that the weight-based ratio of Ni to Si (i.e., a Ni/Si ratio) by weight is as follows: 3 <= Ni/Si <= 5.5), with the remainder being Cu and unavoidable impurities. In the copper alloy, a Cr-Si compound having a size of 0.1 to 5 μm (inclusive) is dispersed in the material at a dispersion density of 1 × 10particles/mmor less, wherein the atom-based ratio of the concentration of Cr to that of Si in the dispersed particle is 1 to 5.

Description

Cu-Ni-Si-based alloy for electronic materials {CU-NI-SI-BASED ALLOY FOR ELECTRONIC MATERIAL}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to precipitation hardening copper alloys, and more particularly to Cu-Ni-Si-Cr based alloys suitable for use in various electronic device components.

Copper alloys for electronic materials used in various electronic device components such as lead frames, connectors, pins, terminals, relays, and switches are required to have both high strength and high conductivity (or thermal conductivity) as basic characteristics. In recent years, high integration, miniaturization, and thinning of electronic components have been rapidly progressed, and correspondingly, demand levels for copper alloys used in electronic component parts have been further advanced.

In view of high strength and high electrical conductivity, the usage-amount of precipitation hardening type copper alloy is increasing instead of the solid solution strengthening type copper alloy represented by conventional phosphor bronze, brass, etc. as a copper alloy for electronic materials in recent years. In the precipitation hardening type copper alloy, by aging the solution-treated supersaturated solid solution, fine precipitates are uniformly dispersed, the strength of the alloy is increased, the amount of solid solution element in copper is reduced, and the electrical conductivity is improved. For this reason, the material which is excellent in mechanical properties, such as strength and elasticity, and is excellent in electrical conductivity and thermal conductivity is obtained.

Among the precipitation hardening copper alloys, Cu-Ni-Si-based copper alloys commonly referred to as Colson-based alloys are representative copper alloys having relatively high conductivity, strength, stress relaxation characteristics, and bendability, and are currently actively developed in the industry. It is one of the losing alloys. In this copper alloy, strength and electrical conductivity are improved by depositing fine Ni-Si-based intermetallic compound particles in a copper matrix.

The precipitate of Ni-Si-based intermetallic compound particles is generally composed of a stoichiometric composition. For example, in Patent Document 1, the mass ratio of Ni and Si in the alloy is determined by the mass composition ratio of Ni ₂ Si as the intermetallic compound. It is described that good electrical conductivity can be obtained by bringing the atomic weight x 2: atomic weight x 1) into proximity, that is, by setting the weight concentration ratio of Ni and Si to Ni / Si = 3 to 7.

However, as described in Patent Literature 1, although the mass ratio of Ni and Si is made close to the mass composition ratio of Ni ₂ Si as the intermetallic compound (atomic amount of Ni x 2: atomic weight of Si x 1), the improvement of properties is achieved. A slight drop in electrical conductivity is observed due to excess Si.

Therefore, it is conceivable to increase the electrical conductivity by adding an element to form a compound with Si such as Cr and compounding with excess Si. Cr is one such element, and there is a Cr-containing Cu-Ni-Si-based alloy.

As Cu-Ni-Si type alloy to which Cr was added as an alloying element, the thing of patent document 2 and patent document 3 is mentioned.

In patent document 2, Ni: 1.5-4.0 weight%, Si: 0.35-1.0 weight%, At least 1 type of metal chosen from the group of Zr, Cr, Sn arbitrarily: 0.05-1.0 weight%, remainder Cu And heating (or cooling) the Colson alloy in a temperature range of 400 to 800 ° C. when heating (or cooling) the Colson alloy made of unavoidable impurities so that the tensile heat deformation of the Colson alloy is 1 × 10 ⁻⁴ or less. A heat treatment method of a Colson alloy is described. According to this method, it is said that the ingot crack at the time of heat processing can be prevented.

In patent document 3, Ni: 2 to 5 weight%, Si: 0.5 to 1.5 weight%, Zn: 0.1 to 2 weight%, Mn: 0.01 to 0.1 weight%, Cr: 0.001 to 0.1 weight%, Al: 0.001 to 0.15 A high-strength copper alloy having excellent bending workability is described, wherein the copper content contains Co: 0.05 to 2% by weight, and the content of S in the impurity component is regulated to 15 ppm or less, and the balance is made of Cu and unavoidable impurities. have. According to this invention, Cr is an element which strengthens the grain boundary of an ingot and improves hot workability. Moreover, when Cr is contained exceeding 0.1 weight%, molten metal is oxidized and casting property is deteriorated. In addition, it is described that the copper alloy is melt-cast and coated with charcoal in the atmosphere in a creeptol furnace.

Moreover, patent document 4 is mentioned from a viewpoint of the compound of Cr and Si. Patent Document 4 contains Cr: 0.1 to 0.25% by weight, Si: 0.005 to 0.1% by weight, Zn: 0.1 to 0.5% by weight, Sn: 0.05 to 0.5% by weight, and the weight ratio of Cr to Si is 3 to 25. In the copper alloy whose balance is composed of Cu and unavoidable impurities, CrSi compounds having a size of 0.05 μm to 10 μm exist in a number density of 1 × 10 ³ to 5 × 10 ⁵ pieces / mm 2 in the copper matrix phase. Moreover, the hot working temperature and the aging heat treatment temperature of an ingot are described about the copper alloy for electronic devices excellent in the etching workability and punching workability which make the size of Cr compound (other than CrSi compound) 10 micrometers or less. According to this method, both etching workability and press punching property can be used suitably.

Patent Document 1: Japanese Patent Application Laid-Open No. 2001-207229

Patent Document 2: Japanese Patent No. 2862942

Patent Document 3: Japanese Patent No. 3049137

Patent Document 4: Japanese Unexamined Patent Publication No. 2005-113180

Disclosure of Invention

Problems to be Solved by the Invention

The recent demand for rapid improvement of the high integration of electronic components, miniaturization and thinning of the material properties is the same for the Cr-containing Cu-Ni-Si alloy which is the alloy system of the present invention.

However, in Patent Document 1, Cr was not added, and in reality, a slight decrease in conductivity was observed due to excess Ni and Si, and no significant improvement was achieved. In patent document 2 and patent document 3, Cr is added to Cu-Ni-Si type alloy, but patent document 2 aims at strengthening solid solution by adding it, and patent document 3 aims at improving hot workability. The description about Cr-Si compound which is a key of is not outstanding. Therefore, from these patent documents, the solution for solving the problem to be solved by the present invention is not easily assumed.

Although Patent Document 4 describes that the etching workability and punching workability are improved by controlling the number density and size of the CrSi compound, since the Ni is not added, the formation of the Ni-Si compound is not considered and the Cr-Si compound is not considered. It is only necessary to consider the conditions for formation, and does not easily assume the means for solving the problem to be solved by the present invention.

Then, the subject of this invention is to provide the Colson-type alloy of the high strength and high conductivity, ie, the improvement of the outstanding characteristic, ie, exhibiting the effect of Cr addition in Cu-Ni-Si type alloy better.

Means to solve the problem

MEANS TO SOLVE THE PROBLEM This inventor discovered the following invention as a result of earnestly researching in order to solve the said subject. In the Cu-Ni-Si-based alloy, a composition in which Si is excessive with respect to Ni, which reliably precipitates Ni silicide in the Ni content, increases the strength, and generates a compound with Cr containing excess Si. , Plan an altitude phone. An important point of the present invention is to control the growth of the Cr-Si compound so that the compounding of Cr and Si grows excessively and there is no shortage of Si to be combined with Ni. Specifically, the inventors have paid attention to the composition, size, and number density of Cr-Si compounds, and found that the effect can be better derived by controlling the temperature and cooling rate of the heat treatment process.

That is, the present invention

Ni/Si

5.5 이다), 잔부 Cu 및 불가피한 불순물로 구성되는 전자 재료용 구리 합금으로서, 재료 중에 분산되는 크기가 0.1 ㎛ ∼ 5 ㎛ 의 Cr-Si 화합물에 대해, 그 분산 입자 중의 Si 에 대한 Cr 의 원자 농도비가 1 ∼ 5 이고, 그 분산 밀도가 1 × 10⁶ 개/㎟ 이하인 전자 재료용 구리 합금.(1) Ni: 1.0-4.5 mass%, Si: 0.50-1.2 mass%, Cr: 0.003-0.3 mass%, provided that the weight ratio of Ni and Si is 3

Ni / Si

5.5), and the atomic concentration ratio of Cr to Si in the dispersed particles of the copper alloy for electronic materials composed of the balance Cu and unavoidable impurities is 0.1 to 5 µm of Cr-Si compound dispersed in the material. The copper alloy for electronic materials which is 1-5 and whose dispersion density is 1 * 10 <^6> pieces / mm <2> or less.

(2) The copper alloy for electronic materials according to claim 1, wherein the dispersion density is higher than 1 × 10 ⁴ particles / mm 2 with respect to a Cr-Si compound having a size of 0.1 μm to 5 μm.

(3) Copper alloy for electronic materials as described in (1) or (2) which contains 0.05-2.0 mass% of 1 type, or 2 or more types further chosen from Sn and Zn.

(4) (1) containing 0.001 to 2.0 mass% of one or two or more selected from Mg, Mn, Ag, P, As, Sb, Be, B, Ti, Zr, Al, Co and Fe The copper alloy for electronic materials according to any one of (3).

(5) A flexible product using the copper alloy according to any one of (1) to (4).

(6) It is an electronic device component using the copper alloy in any one of (1)-(4).

Effects of the Invention

According to this invention, since the Cr addition effect which is an alloying element is exhibited more effectively, the Colson type copper alloy for electronic materials with which intensity | strength and electrical conductivity were remarkably improved is obtained.

Best Mode for Carrying Out the Invention

Ni and Si addition amount

Ni/Si

5.5 가 바람직하고, 3.5

Ni/Si

5.0 이 보다 바람직하다.Ni and Si, and by carrying out a suitable heat treatment to form an Ni silicide (Ni ₂ Si, etc.) as an intermetallic compound, the increase in strength is achieved without deteriorating the electrical conductivity. The mass ratio of Si and Ni is close to stoichiometric composition as described above.

Ni / Si

5.5 is preferred, and 3.5

Ni / Si

5.0 is more preferable.

However, even if Ni / Si has a ratio in the above range, if the amount of Si added is less than 0.5% by mass, the desired strength is not obtained. If the amount of Si is more than 1.2% by mass, the strength is increased, but the conductivity is significantly lowered. It is not preferable because a liquid phase is produced and hot workability is reduced. Therefore, Si: What is necessary is just to be 0.5-1.2 mass%, Preferably it is 0.5-0.8 mass%. What is necessary is just to set Ni addition amount so that said preferable ratio may be satisfy | filled according to Si addition amount, In order to balance with Si addition amount, Ni: 2.5-4.5 mass% may be sufficient, Preferably Ni: 3.2-4.2 mass%, More preferably, Ni: 3.5-4.0 mass%.

Amount of Cr

In a typical Cu-Ni-Si-based alloy, when the Ni-Si concentration is increased, the total number of precipitated particles is increased, thereby increasing the strength due to precipitation strengthening. On the other hand, since the high capacity which does not contribute to precipitation increases with the addition concentration increase, electrical conductivity falls, and ultimately, the peak intensity of aging precipitation rises, but the electrical conductivity which becomes peak intensity falls. However, if Cr is added to 0.003 to 0.3 mass%, preferably 0.01 to 0.1 mass% to the Cu-Ni-Si alloy, the Cu-Ni-Si alloy having the same Ni-Si concentration in the final properties. In comparison, the electrical conductivity can be increased without compromising strength, and the hot workability is improved, and the yield is high.

The composition of the precipitated particles when Cr is added to the Cu-Ni-Si-based alloy is easy to precipitate precipitated particles having a bcc structure mainly composed of Cr, but a compound with Si also easily precipitates. Since Cr can easily precipitate chromium silicide (Cr ₃ Si, etc.) with a compound in Si in a copper matrix by appropriate heat treatment, Cr is combined with a solution treatment, cold rolling, and aging treatment to produce alloy characteristics. A solid solution Si component that has not been precipitated as Ni ₂ Si or the like can be precipitated as a Cr-Si compound. For this reason, the fall of the electrical conductivity by solid solution Si can be suppressed, and the electrical conductivity can be raised, without compromising strength.

At this time, if the Si concentration in the Cr particles is low, the conductivity decreases because Si remains in the mother phase. On the other hand, when the Si concentration in the Cr particles is high, the strength decreases because the Si concentration for precipitating Ni-Si particles decreases. do. In addition, when the Si concentration in Cr is high, coarse Cr-Si compounds increase, resulting in deterioration of bending, fatigue strength and the like. Furthermore, even if the cooling rate after the solvation is slowed down or the aging heat treatment time is excessively extended, the concentration of Si, which coarsens the Cr-Si compound and forms the Ni-Si compound, decreases, and thus the Ni-Si compound that contributes to the strengthening is insufficient. Do. This is because the diffusion rate of Si and Cr in Cu is faster than that of Ni, so that the Cr-Si compound is easily coarsened, and the precipitation rate of the Cr-Si compound is faster than that of the Ni-Si compound.

Therefore, the composition, size and density of the Cr-Si compound can be controlled by controlling the cooling rate after the solution and avoiding the conditions that are higher than the aging condition and the prolonged period when the maximum strength is achieved. Therefore, Cr concentration was made into 0.003 mass% or more and 0.3 mass%, and the atomic concentration ratio of Cr with respect to Si in Cr-Si compound was 1-5.

In addition, Cr is first precipitated at the grain boundaries in the cooling process during melt casting, so that the grain boundaries can be strengthened, so that cracks during hot working are less likely to occur, and yield reduction can be suppressed. That is, Cr precipitated at the grain boundary during melt casting is re-used by solution treatment or the like, but silicide is produced during the aging precipitation. In the conventional Cu-Ni-Si-based alloys, Si, which did not contribute to aging precipitation, suppresses the increase in conductivity while being dissolved in the mother phase, but Si is further precipitated by adding Cr, a silicide forming element. By doing so, the amount of solid solution Si can be reduced as compared with the conventional Cu-Ni-Si-based alloy, and the conductivity can be increased without impairing the strength.

Size, Dispersion Density of Cr-Si Compound

The size of the Cr-Si compound affects bending workability and fatigue strength, and when it exceeds 5 μm or when the dispersion density of the Cr-Si compound of 0.1 to 5 μm exceeds 1 × 10 ⁶ pieces / mm 2. Bending workability and fatigue strength remarkably deteriorate. In addition, since the number density affects the oversufficiency of the Si concentration in a mother phase, desired intensity | strength characteristic is not acquired in the state in which many large particle was disperse | distributed. Therefore, the upper limit of dispersion density should just be 1 * 10 <^6> pieces / mm <^2> or less, Preferably it is 5 * 10 <^5> pieces / mm <^2> or less, More preferably, it may be 1 * 10 <^5> pieces / mm <^2> or less. In addition, when it is 1 * 10 <^4> / mm <2> or less, since the improvement effect by Cr addition is small, it is preferable to exceed this.

Sn and Zn

By adding 0.05 to 2.0 mass% of one or two or more selected from Sn and Zn in a total amount to the Cu-Ni-Si-based alloy according to the present invention, stress relaxation characteristics and the like can be improved without significantly impairing strength and electrical conductivity. have. When the addition amount is less than 0.05 mass%, the effect is insufficient, and when it exceeds 2.0 mass%, it is preferable to add 0.05-2.0 mass%, since the productability, such as castability and hot workability, impairs the electrical conductivity of a product.

Other additional elements

Mg, Mn, Ag, P, As, Sb, Be, B, Ti, Zr, Al, Co, and Fe by adding a predetermined amount to show a variety of effects, complementing each other, as well as bending, workability, plating properties In addition, there is also an effect of improving the manufacturability, such as the improvement of hot workability by miniaturization of the ingot structure, the total amount is 2.0% by mass depending on the characteristics required for one or two or more of these Cu-Ni-Si-based alloys according to the present invention It can add suitably as follows. If the total amount of these elements is less than 0.001% by mass, the desired effect is not obtained. If the total amount of these elements exceeds 2.0% by mass, the lowering of the conductivity and deterioration of manufacturability become remarkable, so the total amount is preferably 0.001 to 2.0% by mass. It is more preferable to set it as 0.01-1.0 mass%.

Moreover, the element which is not specifically described in this specification may be added in the range which does not adversely affect the characteristic of the Cu-Ni-Si type alloy which concerns on this invention.

Next, the manufacturing method of this invention is demonstrated. The Cu-Ni-Si-based alloy according to the present invention is a method for producing a custom of Cu-Ni-Si-based alloy, except for the conditions of solution treatment and aging treatment to control the Ni-Si compound and the Cr-Si compound. Although it is thought that a person skilled in the art can select an optimal manufacturing method according to a composition and a characteristic required, since it does not need a special description, the general manufacturing method for illustrative purposes is demonstrated below.

First, raw materials, such as electric copper, Ni, Si, and Cr, are melt | dissolved using an atmospheric melting furnace, and the molten metal of a desired composition is obtained. And this molten metal is cast into an ingot. Then, hot rolling is performed, cold rolling and heat processing are repeated, and it finishes with the roughening or foil which has desired thickness and characteristic. Heat treatment includes a solution treatment and an aging treatment. In the solution treatment, it heats at high temperature of 700-1000 degreeC, makes a Ni-Si type compound or Cr-Si type compound solid-solution in Cu base material, and simultaneously recrystallizes a Cu base material. The solution treatment may also serve as hot rolling.

In this solution treatment, the cooling rate is also important along with the heating temperature. Conventionally, since the cooling rate after heating was not controlled, the water tank was formed in the exit side of a heating furnace to make water cooling, or air-cooling in air | atmosphere was employ | adopted. In this case, the cooling rate tends to fluctuate by setting the heating temperature, and the conventional cooling rate has fluctuated in the range of 1 ° C / sec or less to 10 ° C / sec or more. Therefore, it was difficult to control the characteristics of the alloy system as in the present invention.

The cooling rate is preferably in the range of 1 ° C / sec to 10 ° C / sec. In the aging treatment, at least 1 h, typically 3 to 24 h, is heated at a temperature in the range of 350 to 550 ° C. to precipitate the solid solution of Ni and Si and the compound of Cr and Si as fine particles. . This aging treatment increases strength and electrical conductivity. In order to obtain higher strength, cold rolling may be performed before and / or after aging. In addition, when cold rolling is performed after aging, the annealing (low temperature annealing) may be performed after cold rolling.

In one embodiment, the Cu-Ni-Si-based copper alloy according to the present invention has a 0.2% yield strength of 780 MPa or more and a conductivity of 45% IACS or more, and a 0.2% yield strength of 860 MPa or more It can be made into 43% IACS or more, Furthermore, 0.2% yield strength is 890 MPa or more, and electrical conductivity can also be 40% IACS or more.

The Cu-Ni-Si-based alloy according to the present invention can be processed into various new products, for example, plate, jaw, tube, rod, and wire, and the Cu-Ni-Si-based copper alloy according to the present invention has high strength. And electronic device components such as lead frames, connectors, pins, terminals, relays, switches, and thin materials for secondary batteries that require high electrical conductivity (or thermal conductivity) to be compatible.

Example

Although the specific example of this invention is shown below, these Examples are provided in order to understand this invention and its advantage better, and it does not intend that invention is limited.

The copper alloy used for the Example of this invention has a composition which added Sn, Zn, Mg, Mn, Co, and Ag suitably to the copper alloy which changed content of Ni, Si, and Cr as shown in Table 1 appropriately. . In addition, the copper alloy used for a comparative example is a Cu-Ni-Si type alloy which has a parameter outside the range of this invention, respectively.

The copper alloy of the various component compositions of Table 1 was melted at 1300 degreeC in the high frequency melting furnace, and was cast in the ingot of thickness 30mm. Subsequently, after heating at 1000 degreeC, this ingot was hot-rolled to 10 mm of plate | board thickness, and it cooled rapidly. In order to remove the scale of a surface, it surface-treated to thickness 8mm, and was made into the plate of thickness 0.2mm by cold rolling. Next, the solution treatment was held at 800 to 900 ° C. for 120 seconds in accordance with the addition amount of Ni and Cr in an Ar gas atmosphere, and then the cooling rate was changed to cool to room temperature. The cooling rate was controlled by changing the gas flow rate blown into the sample after heating, measuring the time to cool to 400 ° C from the highest achieved temperature of the sample, and setting it as the cooling rate. The cooling rate of the furnace when no gas was blown was 5 ° C / s, and the cooling rate when the temperature was lowered while controlling the heating output was set to 1 ° C / s as an example of slowing down the cooling rate. It cold-rolled to 0.1 mm after that, and finally, aged at 400-550 degreeC for 1 to 12 hours according to the addition amount, and aged in inert atmosphere, and prepared the sample.

Thus, the characteristics of strength and electrical conductivity were evaluated about each alloy obtained. About the strength, the tensile test in the rolling parallel direction was performed, 0.2% yield strength (YS; MPa) was measured, and about electrical conductivity (EC;% IACS), it calculated | required by the volume resistivity measurement by W bridge.

Evaluation of bendability performed the 90 degree bending process on the conditions which the ratio of a sample plate thickness and a bending radius becomes 1 using W-shaped metal mold | die. Evaluation evaluated the surface of a bent part with an optical microscope, judged the case where a crack was not observed practically as a problem, and made it into (circle), and made the case where a crack was observed into x. In the fatigue test, both vibration stresses were loaded in accordance with JIS Z 2273, and the stress (MPa) at which the number of repetitions to break was 10 ⁷ times was determined.

Observation of the Cr-Si compound is carried out by FE-AES observation of the plate surface of the material after electropolishing to target particles having a size of 0.1 μm or more at many points, and to actually remove the adsorption elements (C, O) of the surface layer. In order to sputter with Ar ⁺ , the Auger spectrum for each particle was measured, and Cr and Si were detected when the detected element was converted to a weight concentration using a sensitivity coefficient method as a semi-quantitative value. The "composition", "size" and "dispersion density" of the Cr-Si compound are the average composition of the Cr-Si particles having a size of 0.1 to 5 µm, and the diameter of the smallest circle and the observed field of view, which were analyzed at multiple points under FE-AES observation. It was set as the average number.

Table 1 and Table 2 show the results.

In Inventive Examples 1-25, since the dispersion density of a Cr-Si compound was 1x10 <^6> or less and Cr / Si was 1-5 in the appropriate cooling rate, favorable characteristic was obtained.

On the other hand, in Comparative Examples 1-3, since the cooling rate was slow, Cr-Si compound grew too much, sufficient strength was not obtained, and bending workability was also bad.

In Comparative Examples 4 and 5, the cooling rate was high, so that no growth was achieved, and excessive Si was dissolved in the alloy, resulting in a decrease in strength and electrical conductivity. In Comparative Examples 6 and 7, because the aging temperature was high, the Cr-Si compound grew excessively, sufficient strength was not obtained, and bending workability was also poor. In Comparative Examples 8 and 9, because the concentration of Cr was too high, the Cr-Si compound grew excessively, sufficient strength was not obtained, and the bending workability was also poor.

Claims (6)

Ni: 1.0-4.5 mass%, Si: 0.50-1.2 mass%, Cr: 0.003-0.3 mass%, provided that the weight ratio of Ni and Si is 3

Ni / Si

5.5), and the atomic concentration ratio of Cr to Si in the dispersed particles of the copper alloy for electronic materials composed of the balance Cu and unavoidable impurities is 0.1 to 5 µm of Cr-Si compound dispersed in the material. The copper alloy for electronic materials which is 1-5 and whose dispersion density is 1 * 10 <^6> pieces / mm <2> or less. The method of claim 1, The copper alloy for electronic materials whose dispersion density is higher than 1 * 10 <^4> / mm <2> with respect to the Cr-Si compound of 0.1 micrometer-5 micrometers in size. The method according to claim 1 or 2, Furthermore, the copper alloy for electronic materials which contains 0.05-2.0 mass% of 1 type, or 2 or more types chosen from Sn and Zn. The method according to claim 1 or 2, Furthermore, copper for electronic materials containing 0.001-2.0 mass% of 1 type, or 2 or more types chosen from Mg, Mn, Ag, P, As, Sb, Be, B, Ti, Zr, Al, Co, and Fe. alloy. The new copper article using the copper alloy of Claim 1 or 2. The electronic device component using the copper alloy of Claim 1 or 2.