CN101646792A - Cu-Ni-Si-based alloy for electronic material - Google Patents
Cu-Ni-Si-based alloy for electronic material Download PDFInfo
- Publication number
- CN101646792A CN101646792A CN200880010189A CN200880010189A CN101646792A CN 101646792 A CN101646792 A CN 101646792A CN 200880010189 A CN200880010189 A CN 200880010189A CN 200880010189 A CN200880010189 A CN 200880010189A CN 101646792 A CN101646792 A CN 101646792A
- Authority
- CN
- China
- Prior art keywords
- alloy
- compound
- copper alloy
- quality
- electric conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012776 electronic material Substances 0.000 title claims abstract description 14
- 229910045601 alloy Inorganic materials 0.000 title abstract description 33
- 239000000956 alloy Substances 0.000 title abstract description 33
- 229910017876 Cu—Ni—Si Inorganic materials 0.000 title abstract description 24
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 35
- 229910019819 Cr—Si Inorganic materials 0.000 claims abstract description 30
- 239000010949 copper Substances 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 229910052804 chromium Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- -1 it contains Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- UREBDLICKHMUKA-CXSFZGCWSA-N dexamethasone Chemical compound C1CC2=CC(=O)C=C[C@]2(C)[C@]2(F)[C@@H]1[C@@H]1C[C@@H](C)[C@@](C(=O)CO)(O)[C@@]1(C)C[C@@H]2O UREBDLICKHMUKA-CXSFZGCWSA-N 0.000 abstract description 6
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 46
- 238000001816 cooling Methods 0.000 description 21
- 239000000243 solution Substances 0.000 description 14
- 239000006104 solid solution Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 229910018098 Ni-Si Inorganic materials 0.000 description 11
- 229910018529 Ni—Si Inorganic materials 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 230000032683 aging Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 239000012071 phase Substances 0.000 description 7
- 238000005097 cold rolling Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007669 thermal treatment Methods 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000012467 final product Substances 0.000 description 5
- 229910000765 intermetallic Inorganic materials 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 206010020880 Hypertrophy Diseases 0.000 description 4
- 238000005266 casting Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000004881 precipitation hardening Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910019974 CrSi Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000004927 fusion Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000000864 Auger spectrum Methods 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 2
- 229910000905 alloy phase Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910008458 Si—Cr Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021357 chromium silicide Inorganic materials 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009661 fatigue test Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000002650 habitual effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005058 metal casting Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/02—Single bars, rods, wires, or strips
Abstract
Disclosed is a Corson alloy having dramatically improved properties (e.g., high strength and high conductivity) which are achieved by allowing the effect of the addition of Cr to a Cu-Ni-Si-based alloy to exhibit more effectively. Specifically disclosed is a copper alloy for an electronic material, which comprises 1.0 to 4.5 mass% of Ni, 0.50 to 1.2 mass% of Si, 0.0030 to 0.3 mass% of Cr (providedthat the weight-based ratio of Ni to Si (i.e., a Ni/Si ratio) by weight is as follows: 3 = Ni/Si = 5.5), with the remainder being Cu and unavoidable impurities. In the copper alloy, a Cr-Si compoundhaving a size of 0.1 to 5 [mu]m (inclusive) is dispersed in the material at a dispersion density of 1 10<6> particles/mm<2> or less, wherein the atom-based ratio of the concentration of Cr to that ofSi in the dispersed particle is 1 to 5.
Description
Technical field
The invention relates to a kind of precipitation hardening type copper alloy, is alloy about a kind of Cu-Ni-Si-Cr that is suitable for various electronic equipments parts especially.
Background technology
For the copper alloy for electronic material that is used for various electronic equipments parts such as lead frame, junctor, pin, terminal, rly., switch, as its fundamental characteristics, requirement can realize high strength and high conductivity (or thermal conductivity) simultaneously.In recent years, the highly integrated and miniaturization of electronic unit, thin-walled property fast development, correspondingly, to the also more raising of calling hierarchy of employed copper alloy in the electronic equipments parts.
With regard to the viewpoint of high strength and high conductivity, in recent years, as copper alloy for electronic material, the usage quantity of precipitation hardening type copper alloy increases, and is the solution strengthening type copper alloy of representative with phosphor bronze, brass etc. with its replacement in the past.In the precipitation hardening type copper alloy,, fine precipitate is disperseed equably, thereby improve the intensity of alloy, reduce the solid solution element amount in the copper simultaneously, to improve electroconductibility by the supersaturated solid solution through solution treatment is carried out ageing treatment.Therefore, can obtain mechanical properties excellences such as intensity, elasticity, and electroconductibility, the good material of thermal conductivity.
In the precipitation hardening type copper alloy, the Cu-Ni-Si series copper alloy that to be commonly referred to as section gloomy (Corson) be alloy is the typical copper alloy that has higher electroconductibility, intensity, stress relaxation properties and bendability concurrently, is one of alloy of the at present positive active development of industry.In this copper alloy, can precipitate into the raising that realizes intensity and electric conductivity in the copper matrix by making fine Ni-Si series intermetallic compound particle.
The precipitate of Ni-Si series intermetallic compound particle generally is made of stoichiometric composition, for example, has put down in writing in the patent documentation 1: the mass ratio by making Ni in the alloy and Si is near the Ni as intermetallic compound
2The quality ratio of components of Si-(nucleidic mass of nucleidic mass * 2:Si of Ni * 1) promptly, is made as Ni/Si=3～7 by the weight concentration ratio with Ni and Si, thereby obtains good electrical conductivity.
Yet, as putting down in writing in the patent documentation 1, by the approaching Ni of the mass ratio that makes Ni and Si as intermetallic compound
2The quality ratio of components of Si (nucleidic mass of nucleidic mass * 2:Si of Ni * 1) though can realize the improvement of characteristic, is found in the reality to cause electric conductivity decline to a certain degree because of excessive Si.
Therefore, it is generally acknowledged can add Cr etc. can and Si form the element of compound, make its with excessive Si chemical combination with the raising electric conductivity.Cr is one of its element, and can form the Cu-Ni-Si that contains Cr is alloy.
As being added with the Cu-Ni-Si of Cr as alloying element is alloy, can enumerate the example of record in patent documentation 2, the patent documentation 3.
In the patent documentation 2, put down in writing a kind of heat treating method of Corson alloy, it is characterized in that, to contain Ni:1.5～4.0 weight %, Si:0.35～1.0 weight %, when arbitrarily being selected from least a kind of metal 0.05～1.0 weight % among Zr, Cr, the Sn, remainder and heating (or cooling) by the Corson alloy that Cu and unavoidable impurities constitute, in 400～800 ℃ temperature province, above-mentioned Corson alloy is heated (or cooling) so that the stretching thermal deformation of above-mentioned Corson alloy is 1 * 10
-4Below.According to this method, the ingot bar in the time of can preventing thermal treatment breaks.
Put down in writing a kind of high-tensile strength copper alloy of excellent in bending workability in the patent documentation 3, it is characterized in that, contain Ni:2～5 weight %, Si:0.5～1.5 weight %, Zn:0.1～2 weight %, Mn:0.01～0.1 weight %, Cr:0.001～0.1 weight %, Al:0.001～0.15 weight %, Co:0.05～2 weight %, and will be limited in below the 15ppm as the content of the S of impurity component, remainder is made of Cu and unavoidable impurities.According to this invention, Cr strengthens the crystal boundary of ingot bar, improves the element of hot workability.In addition, if the content of Cr surpasses 0.1 weight %, then molten metal meeting oxidation, thus cause the castibility variation.Put down in writing in addition: this copper alloy is in kryptol furnace, coats charcoal and carry out the fusion casting in atmosphere.
In addition, with regard to the viewpoint of the compound of Cr and Si, can enumerate patent documentation 4.In the patent documentation 4, at containing Cr:0.1～0.25 weight %, Si:0.005～0.1 weight %, Zn:0.1～0.5 weight %, Sn:0.05～0.5 weight %, the weight ratio of Cr and Si is 3～25, and remainder is made of Cu and unavoidable impurities, and in the copper parent phase, with 1 * 10
3～5 * 10
5Individual/mm
2Individual number density exist have 0.05 μ m～the CrSi compound of 10 μ m sizes and the size of Cr compound (beyond the CrSi compound) be made as the following etching and processing of 10 μ m and the electronic equipments copper alloy of punch process excellence, put down in writing the hot processing temperature and the timeliness thermal treatment temp of ingot bar.According to this method, can use etching and processing and compacting stampability suitably.
[patent documentation 1] TOHKEMY 2001-207229 communique
No. 2862942 communique of [patent documentation 2] Japanese Patent
No. 3049137 communique of [patent documentation 3] Japanese Patent
[patent documentation 4] TOHKEMY 2005-113180 communique
Summary of the invention
The Cu-Ni-Si that promptly contains Cr for alloy system of the present invention is an alloy, meets in recent years the requirement to the tremendous raising of the material behavior of the Highgrade integration fast of electronic unit and miniaturization, thin-walled property too.
Yet, do not add Cr in the patent documentation 1, can find in the reality because of excessive N i, Si cause electric conductivity decline to a certain degree, thereby can't reach the tremendous raising of characteristic.In patent documentation 2 and the patent documentation 3, though at Cu-Ni-Si is to be added with Cr in the alloy, but the purpose of adding Cr in the patent documentation 2 is in order to the realization solution strengthening, and the purpose of patent documentation 3 is in order to improve hot workability, to find with key of the present invention to be not the relevant record of Cr-Si compound.Therefore, can't easily expect the solution of the problem that institute of the present invention desire solves by these patent documentations.
In the patent documentation 4, put down in writing by the individual number density and the size of control CrSi compound and improved etching and processing and punch process, but owing to do not add Ni, only consider that the condition of Cr-Si compound formation gets final product so need not consider the formation of Ni-Si compound, thereby can't easily expect the solution of the problem that institute of the present invention desire solves.
Therefore, problem of the present invention is, provides a kind of by being that the effect of adding Cr is brought into play more well at Cu-Ni-Si, thereby makes the tremendous raising of characteristic, and promptly the section of high strength, high conductivity is gloomy is alloy.
The inventor has carried out wholwe-hearted research for solving above-mentioned problem, found that following invention.At Cu-Ni-Si is in the alloy, setting Si with respect to Ni is excessive composition, positively separate out to realize high strength except making, make excessive Si and the Cr reacting generating compound that is added on the other hand to realize high conductionization with Ni addition corresponding N i silicide.And crucial part of the present invention is that the growth of control Cr-Si compound should become not enough with Ni bonded Si with the chemical combination hypertrophy of avoiding Cr and Si.Particularly, the inventor is conceived to the composition and size, individual number density of Cr-Si compound, finds can bring into play its effect better by the temperature and the speed of cooling of control heat treatment step.
That is, the present invention is as follows:
(1) a kind of copper alloy for electronic material, it contains, and Ni:1.0～4.5 quality %, Si:0.50～1.2 quality %, Cr:0.003～0.3 quality % (wherein, the weight ratio of Ni and Si is 3≤Ni/Si≤5.5), and remainder comprises Cu and unavoidable impurities, wherein, about the size that is dispersed in the material is the Cr-Si compound of 0.1 μ m～5 μ m, and the Cr in its dispersed particle is 1～5 with the atomic percent of Si ratio, its minute bulk density be 1 * 10
6Individual/mm
2Below.
(2) the described copper alloy for electronic material of claim 1 wherein, is the Cr-Si compound of 0.1 μ m～5 μ m about size, its minute bulk density be higher than 1 * 10
4Individual/mm
2
(3) as (1) or (2) described copper alloy for electronic material, wherein, further contain 0.05～2.0 quality % be selected among Sn and the Zn more than a kind or 2 kinds.
(4) as any described copper alloy for electronic material in (1)～(3), wherein, further contain 0.001～2.0 quality % be selected among Mg, Mn, Ag, P, As, Sb, Be, B, Ti, Zr, Al, Co and the Fe more than a kind or 2 kinds.
(5) any described copper alloy in its use (1)～(4) a kind of copper product (Shen Copper product of stretching).
(6) a kind of electronic equipments parts, any described copper alloy in its use (1)～(4).
According to the present invention, can bring into play the additive effect of alloying elements cr better, so can obtain electronic material that intensity and electric conductivity be significantly improved with the gloomy series copper alloy of section.
Embodiment
The addition of Ni and Si
Ni and Si form Ni silicide (Ni as intermetallic compound by implementing suitable thermal treatment
2Si etc.), do not make the electric conductivity variation to realize high strength.Preferred as mentioned above 3≤Ni/Si≤5.5 of the mass ratio of Si and Ni, more preferably 3.5≤Ni/Si≤5.0 near the metering composition.
Yet, even if Ni/Si has the ratio of above-mentioned scope, but if the Si addition is less than 0.5 quality %, then still can't obtain desirable strength, and if surpass 1.2 quality %, though then can realize high strength, electric conductivity can significantly reduce, further can generate liquid phase and cause hot workability to descend in segregation portion, thus not good.Therefore, be made as Si:0.5～1.2 quality % and get final product, be preferably 0.5～0.8 quality %.The Ni addition is set according to the Si addition and is got final product to satisfy above-mentioned preferred ratio, in order to average out with the Si addition, to be made as Ni:2.5～4.5 quality % and to get final product, and is preferably Ni:3.2～4.2 quality %, more preferably Ni:3.5～4.0 quality %.
The addition of Cr
At common Cu-Ni-Si is in the alloy, if Ni-Si concentration is risen, then the sum of precipitation particles can increase, and therefore can realize that intensity improves by precipitation strength.On the other hand, along with the rising of adding concentration, the solid solution capacity that is helpless to separate out also can increase, so electric conductivity can reduce, though the peak strength separated out of timeliness can rise as a result, the peak strength of electric conductivity can descend.Yet, if to above-mentioned Cu-Ni-Si is the Cr that adds 0.003～0.3 quality % in the alloy, the Cr that is preferably 0.01～0.1 quality %, then in final response, with the Cu-Ni-Si with identical Ni-Si concentration is the alloy phase ratio, electric conductivity is risen, further can improve hot workability and improve yield rate.
At Cu-Ni-Si is the composition of the particle of separating out when being added with Cr in the alloy, though will be that the precipitation particles of the bcc structure of principal constituent is separated out separately easily with Cr, also separates out easily with the compound of Si.Cr is by implementing suitable thermal treatment, can be in the copper parent phase be chromium silicide (Cr easily with the compound of Cr and Si
3Si etc.) separate out,, can make not as Ni so form in the step of alloy characteristic in combination solution treatment, cold rolling, ageing treatment
2Si etc. and the solid solution Si composition of separating out are separated out with the form of Cr-Si compound.Therefore, the reduction of the electric conductivity that causes because of solid solution Si can be suppressed, thereby the raising of electric conductivity can be realized without detriment to intensity.
At this moment, if the Si concentration in the Cr particle is low, then Si can residue in the parent phase, thereby electric conductivity can reduce, on the other hand, if the Si concentration height in the Cr particle then can reduce in order to the Si concentration of separating out the Ni-Si particle, thereby intensity can reduce.Further, when the Si concentration among the Cr was high, thick Cr-Si compound can increase, and meeting variation such as bending, fatigue strength.Further, even if the speed of cooling after the solid solution of slowing down or excessively prolongs the timeliness heat treatment time, the Cr-Si compound still can thickization and the Si concentration that forms the Ni-Si compound is reduced, thereby cause helping the Ni-Si compound deficiency strengthened.Its reason is that Si among the Cu and the velocity of diffusion of Cr are faster than Ni, so easy thickization of Cr-Si compound, thereby the speed of separating out of Cr-Si compound becomes faster than the speed of separating out of Ni-Si compound.
Therefore, if the speed of cooling of control after the solid solution, compare more high temperature, the condition of longer time, the then composition of may command Cr-Si compound, size and density with the aging condition of maximum strength to avoid becoming.Therefore, Cr concentration is made as 0.003 quality %～0.3 quality %, the atomic percent ratio of the Cr in the Cr-Si compound and Si is made as 1～5.
In addition, owing to can preferentially separate out to crystal boundary in the process of cooling of Cr when fusion is cast, so can strengthen crystal boundary, breaking when making hot-work is difficult for producing, thereby can suppress decrease in yield.That is, when fusion is cast, separate out solid solution again in solution treatment etc., and when follow-up timeliness is separated out, generate silicide to the Cr of crystal boundary.In the Si amount that common Cu-Ni-Si is in the alloy to be added, be helpless to Si solid solution still that timeliness separates out in parent phase and suppress the raising of electric conductivity, but by adding silicide forming element Cr, silicide is further separated out, thereby with Cu-Ni-Si in the past be the alloy phase ratio, can reduce solid solution Si amount, thereby electric conductivity is improved.
The size of Cr-Si compound, branch bulk density
The size of Cr-Si compound can impact bendability and fatigue strength etc., and the branch bulk density that surpasses the Cr-Si compound of 5 μ m or 0.1～5 μ m when the size of Cr-Si compound surpasses 1 * 10
6Individual/mm
2The time, bendability or fatigue strength can show variation.Further, individual number density can influence the excessive or not enough of Si concentration in the parent phase, so can't obtain required strength characteristics under the state that is dispersed with macroparticle in a large number.Therefore, divide bulk density on be limited to 1 * 10
6Individual/mm
2Below get final product, be preferably 5 * 10
5Individual/mm
2Below, more preferably 1 * 10
5Individual/mm
2Below.In addition, 1 * 10
4Individual/mm
2During following situation, by add that Cr realizes to improve effect little, so preferably surpass 1 * 10
4Individual/mm
2
Sn and Zn
Cu-Ni-Si of the present invention is in the alloy, with the total amount of 0.05～2.0 quality % add be selected among Sn and the Zn more than a kind or 2 kinds, can improve stress relaxation properties etc. thus, and can significantly not damage intensity, electric conductivity.If its addition is less than 0.05 quality %, then effect can be not enough, if surpass 2.0 quality %, then can damage the electric conductivity of manufacturings such as castibility, hot workability, goods, therefore preferred 0.05～2.0 quality % that adds.
Other adds element
By adding Mg, Mn, Ag, P, As, Sb, Be, B, Ti, Zr, Al, Co and the Fe of specified quantitative, can present various effects, and by supplying mutually, not only can improve intensity, electric conductivity, also can improve manufacturing, for example improvement of the hot workability that realizes of bendability, plating or the miniaturization by the ingot bar tissue etc., therefore, Cu-Ni-Si of the present invention is in the alloy, can according to desired characteristic suitably add total amount be in these elements below the 2.0 quality % more than a kind or 2 kinds.For this addition, if the total amount of these elements is less than 0.001 quality %, then can't obtain required effect, and if surpass 2.0 quality %, then the variation of the reduction of electric conductivity or manufacturing can become apparent, therefore total amount preferably is made as 0.001～2.0 quality %, more preferably is made as 0.01～1.0 quality %.
And, can be not that the characteristic of alloy causes in the dysgenic scope to Cu-Ni-Si of the present invention, also can add in this specification sheets the element of concrete record.
Then manufacture method of the present invention is described.Cu-Ni-Si of the present invention is an alloy, except that the condition of the solution treatment of controlling Ni-Si compound, Cr-Si compound, ageing treatment, can be that the habitual manufacture method of alloy is made by Cu-Ni-Si, those skilled in the art should be according to forming and the suitableeest method for making of desired characteristic selection, so need not specify, below will be to describing in order to illustrative general manufacture method.
At first, use the air melting stove,, obtain the molten metal of required composition the fusing of raw materials such as electrolytic copper, Ni, Si, Cr.Then, this molten metal casting is become ingot casting.Carry out hot rolling then, and carry out cold rolling and thermal treatment repeatedly, to be finish-machined to bar or paper tinsel with desired thickness and characteristic.Thermal treatment exists solution treatment and ageing treatment.In the solution treatment, heat, make Ni-Si based compound or the solid solution of Cr-Si based compound in the Cu parent phase, make Cu parent phase recrystallization simultaneously with 700～1000 ℃ high temperature.Solution treatment is also undertaken by hot rolling sometimes.
In this solution treatment, speed of cooling and Heating temperature are all important.Speed of cooling after control was not heated in the past so tank is set to carry out water-cooled in outlet one side (exit side) of process furnace, perhaps adopts the air cooling under the atmospheric environment atmosphere.At this moment, speed of cooling is easily because of the setting change of Heating temperature, speed of cooling in the past below 1 ℃/second～range changing more than 10 ℃/second.Therefore, be difficult to carry out control as the characteristic of the alloy system of example of the present invention.
Speed of cooling is preferably 1 ℃/second～10 ℃/second scope.In the ageing treatment, in 350～550 ℃ temperature range, carry out the heating more than the 1h, be typically the heating of carrying out 3～24h, the Ni of solid solution in the solution treatment and the compound of Si and the compound of Cr and Si are separated out with the form of minuteness particle.By this ageing treatment, intensity and electric conductivity can improve.For obtaining higher intensity, carry out cold rolling sometimes before timeliness and/or after the timeliness.In addition, when after timeliness, carrying out after cold rolling, carrying out stress relief annealing (low temperature annealing, low-temperature annealing) sometimes when cold rolling.
Cu-Ni-Si series copper alloy of the present invention in one embodiment, can make 0.2% yield-point is more than the 780MPa and electric conductivity is more than the 45%IACS, further can make 0.2% yield-point is more than the 860MPa and electric conductivity is more than the 43%IACS, and further can make 0.2% yield-point is more than the 890MPa and electric conductivity is more than the 40%IACS.
Cu-Ni-Si of the present invention is that alloy can be processed into the various copper product of stretching, for example plate, bar, pipe, rod and line, further, the Cu-Ni-Si series copper alloy of the present invention lead frame, junctor, pin, terminal, rly., switch, secondary cell that can be used for requiring simultaneously high strength and high conductivity (or thermal conductivity) is with electronic equipments parts such as foils.
[embodiment]
Below concrete example of the present invention is described, but these embodiment provide in order further to understand the present invention and advantage thereof, and are not intended to be used for limit invention.
Used copper alloy in the embodiments of the invention has the composition that suitably is added with Sn, Zn, Mg, Mn, Co and Ag in the copper alloy of the some variations of content that make Ni, Si and Cr as shown in table 1.In addition, in the comparative example used copper alloy to be respectively the Cu-Ni-Si with extraneous parameter of the present invention be alloy.
Utilize high frequency melting furnace, the copper alloy that the various one-tenth of record are grouped in the his-and-hers watches 1 under 1300 ℃ temperature carries out melting, is cast as the ingot casting that thickness is 30mm.Then, after heating under 1000 ℃ the temperature, being hot-rolled down to thickness of slab is 10mm, cools off fast again with this ingot casting.For removing the scale (scale) on surface, implementing surfacing to thickness is 8mm, subsequently by the cold rolling plate of making thickness 0.2mm.Then, in Ar compression ring border, implement solution treatment,, after under 800～900 ℃ temperature, keeping 120 seconds, change speed of cooling and be cooled to room temperature according to the addition of Ni and Cr.Speed of cooling is controlled by the gas flow that changes the sample winding-up after heating, and instrumentation is cooled to time till 400 ℃ as speed of cooling from the temperature that is up to of sample.The speed of furnace cooling during blowing gas is not 5 ℃/s, and further, as the example that delays speed of cooling, the speed of cooling when one side control is added thermal output and simultaneously lowers the temperature is made as 1 ℃/s.Then, be cold-rolled to 0.1mm, last, according to addition, under 400～550 ℃ temperature, in inert gas environment, respectively implement 1～12 hour ageing treatment, produce sample.
Each alloy that obtains is in this way carried out the evaluating characteristics of intensity and electric conductivity.For intensity, roll tension test on the parallel direction to measure 0.2% yield-point (YS; And electric conductivity (EC MPa); %IACS) then measure and obtain by the volume specific resistance that utilizes Wheatstone bridge.
W font mould is used in the evaluation of bendability, at the ratio of sample thickness of slab and bending radius is to carry out 90 ° of bending machining under 1 the condition.In the evaluation,, will not observe fissured situation and be judged as practical upward no problem, and mark zero with observation by light microscope bending machining portion surface, will observe fissured situation to be labeled as *.Fatigue test is according to JIS Z 2273, applies repeated stress, and the number of occurrence of obtaining till fracture is 10
7Inferior stress (MPa).
The observation of Cr-Si compound is after the plate face to material carries out electropolishing, observes by FE-AES, in many places be with size particle more than the 0.1 μ m as object, utilize Ar
+Carry out sputter to remove the element (C, O) that in fact is adsorbed in its top layer, measure the auger spectrum (Augerspectrum) of each particle then, when detected element is carried out the weight concentration conversion by the sensitivity coefficient method as the semidefinite value, be object with the particle that detects Cr and Si." composition " of Cr-Si compound, " size ", " branch bulk density " are defined as FE-AES and observe down mean number in the average composition that the size that is drawn is the Cr-Si particle of 0.1～5 μ m, minimum circular diameter, each field of view is analyzed in many places.
The results are shown in table 1 and table 2.
In the example 1～25, by suitable speed of cooling, the branch bulk density of Cr-Si compound is 1 * 10
6Below, and Cr/Si is 1～5 scope, so obtain good characteristic.
On the other hand, in the comparative example 1～3, because speed of cooling is slow, thus Cr-Si compound hypertrophy, thus full intensity can't be obtained, and bendability is also poor.
In the comparative example 4,5 because speed of cooling is fast, so the Cr-Si compound do not grow, excessive Si solid solution in alloy, intensity and electric conductivity variation.In the comparative example 6,7, because the aging temp height, so Cr-Si compound hypertrophy, thus full intensity can't be obtained, and bendability is also poor.In the comparative example 8,9, because the excessive concentration of Cr, so Cr-Si compound hypertrophy, thus full intensity can't be obtained, and bendability is also poor.
Claims (6)
1. copper alloy for electronic material, it contains, and Ni:1.0～4.5 quality %, Si:0.50～1.2 quality %, Cr:0.003～0.3 quality % (wherein, the mass ratio of Ni and Si is 3≤Ni/Si≤5.5), and remainder comprises Cu and unavoidable impurities, wherein, about the size that is dispersed in the material is the Cr-Si compound of 0.1 μ m～5 μ m, and the Cr in its dispersed particle is 1～5 with the atomic percent of Si ratio, its minute bulk density be 1 * 10
6Individual/mm
2Below.
2. copper alloy for electronic material as claimed in claim 1 wherein, is the Cr-Si compound of 0.1 μ m～5 μ m about size, its minute bulk density be higher than 1 * 10
4Individual/mm
2
3. copper alloy for electronic material as claimed in claim 1 or 2, wherein, further contain 0.05～2.0 quality % be selected among Sn and the Zn more than a kind or 2 kinds.
4. as any described copper alloy for electronic material in the claim 1～3, wherein, further contain 0.001～2.0 quality % be selected among Mg, Mn, Ag, P, As, Sb, Be, B, Ti, Zr, Al, Co and the Fe more than a kind or 2 kinds.
5. stretch the copper product for one kind, it uses any described copper alloy in the claim 1～4.
6. electronic equipments parts, it uses any described copper alloy in claim 1～4.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007094441 | 2007-03-30 | ||
| JP094441/2007 | 2007-03-30 | ||
| PCT/JP2008/056138 WO2008123433A1 (en) | 2007-03-30 | 2008-03-28 | Cu-ni-si-based alloy for electronic material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101646792A true CN101646792A (en) | 2010-02-10 |
| CN101646792B CN101646792B (en) | 2012-02-22 |
Family
ID=39830918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800101895A Active CN101646792B (en) | 2007-03-30 | 2008-03-28 | Cu-Ni-Si-based alloy for electronic material |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20100086435A1 (en) |
| EP (1) | EP2154257B1 (en) |
| JP (1) | JP4418028B2 (en) |
| KR (1) | KR101211984B1 (en) |
| CN (1) | CN101646792B (en) |
| TW (1) | TWI395824B (en) |
| WO (1) | WO2008123433A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103155306A (en) * | 2010-10-14 | 2013-06-12 | 矢崎总业株式会社 | Female terminal and method for fabricating female terminal |
| CN105821238A (en) * | 2016-05-31 | 2016-08-03 | 黄河科技学院 | Copper alloy material and preparing method thereof |
| CN106191725A (en) * | 2016-06-24 | 2016-12-07 | 河南江河机械有限责任公司 | High-intensity high-conductivity copper alloy nanometer phase precipitation technique method |
| CN108193080A (en) * | 2016-12-08 | 2018-06-22 | 北京有色金属研究总院 | High intensity, highly conductive proof stress relaxation corson alloy material and preparation method thereof |
| CN109609801A (en) * | 2018-12-06 | 2019-04-12 | 宁波博威合金材料股份有限公司 | High property copper alloy and preparation method thereof |
| CN115386766A (en) * | 2022-08-11 | 2022-11-25 | 中国科学院金属研究所 | Cu-Ni-Si-Cr-Mg quinary copper alloy and preparation method thereof |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2270242B1 (en) * | 2008-03-31 | 2014-06-04 | The Furukawa Electric Co., Ltd. | Copper alloy material for electric or electronic apparatuses, method for producing it and component |
| EP2267173A4 (en) * | 2008-03-31 | 2013-09-25 | Furukawa Electric Co Ltd | Copper alloy material for electric and electronic apparatuses, and electric and electronic components |
| WO2011068134A1 (en) * | 2009-12-02 | 2011-06-09 | 古河電気工業株式会社 | Copper alloy sheet material having low young's modulus and method for producing same |
| WO2011125153A1 (en) * | 2010-04-02 | 2011-10-13 | Jx日鉱日石金属株式会社 | Cu-ni-si alloy for electronic material |
| JP5045784B2 (en) * | 2010-05-14 | 2012-10-10 | 三菱マテリアル株式会社 | Copper alloy for electronic equipment, method for producing copper alloy for electronic equipment, and rolled copper alloy material for electronic equipment |
| JP5712585B2 (en) * | 2010-12-03 | 2015-05-07 | 三菱マテリアル株式会社 | Copper alloy for electronic equipment, method for producing copper alloy for electronic equipment, and rolled copper alloy material for electronic equipment |
| JP5684022B2 (en) * | 2011-03-28 | 2015-03-11 | 三菱伸銅株式会社 | Cu-Ni-Si based copper alloy sheet excellent in stress relaxation resistance, fatigue resistance after bending and spring characteristics, and method for producing the same |
| US9159985B2 (en) * | 2011-05-27 | 2015-10-13 | Ostuka Techno Corporation | Circuit breaker and battery pack including the same |
| JP5903842B2 (en) | 2011-11-14 | 2016-04-13 | 三菱マテリアル株式会社 | Copper alloy, copper alloy plastic working material, and method for producing copper alloy plastic working material |
| KR101274063B1 (en) * | 2013-01-22 | 2013-06-12 | 한국기계연구원 | A metal matrix composite with two-way shape precipitation and method for manufacturing thereof |
| KR101709560B1 (en) * | 2013-09-27 | 2017-02-23 | 주식회사 엘지화학 | Secondary Battery with Electrode Tab Having Low Resistance |
| JP6452472B2 (en) * | 2014-01-27 | 2019-01-16 | 古河電気工業株式会社 | Copper alloy material and method for producing the same |
| CN105385890A (en) * | 2015-11-27 | 2016-03-09 | 宁波博威合金材料股份有限公司 | Nickel and silicon contained bronze alloy and application thereof |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61115249A (en) | 1984-11-09 | 1986-06-02 | Sanyo Electric Co Ltd | Supporting device of electromechanical transducer |
| JP2862942B2 (en) | 1990-03-20 | 1999-03-03 | 古河電気工業株式会社 | Heat treatment method of Corson alloy |
| JP3049137B2 (en) * | 1991-12-27 | 2000-06-05 | 株式会社神戸製鋼所 | High strength copper alloy excellent in bending workability and method for producing the same |
| JPH0718356A (en) * | 1993-07-01 | 1995-01-20 | Mitsubishi Electric Corp | Copper alloy for electronic equipment, its production and ic lead frame |
| JP2001207229A (en) * | 2000-01-27 | 2001-07-31 | Nippon Mining & Metals Co Ltd | Copper alloy for electronic material |
| JP4177221B2 (en) | 2003-10-06 | 2008-11-05 | 古河電気工業株式会社 | Copper alloy for electronic equipment |
| JP3864965B2 (en) * | 2004-06-08 | 2007-01-10 | 日立電線株式会社 | Manufacturing method of copper alloy for terminals and connectors |
| CN101166840B (en) * | 2005-02-28 | 2012-07-18 | 古河电气工业株式会社 | Copper alloy |
| CN1776997B (en) * | 2005-12-13 | 2010-05-05 | 江苏科技大学 | Large-capacity steam turbine generator rotor copper alloy slot wedge and its preparing method |
-
2008
- 2008-03-28 KR KR1020097022449A patent/KR101211984B1/en active IP Right Grant
- 2008-03-28 US US12/532,929 patent/US20100086435A1/en not_active Abandoned
- 2008-03-28 TW TW097111276A patent/TWI395824B/en active
- 2008-03-28 WO PCT/JP2008/056138 patent/WO2008123433A1/en active Application Filing
- 2008-03-28 CN CN2008800101895A patent/CN101646792B/en active Active
- 2008-03-28 JP JP2009509224A patent/JP4418028B2/en active Active
- 2008-03-28 EP EP08739256.9A patent/EP2154257B1/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103155306A (en) * | 2010-10-14 | 2013-06-12 | 矢崎总业株式会社 | Female terminal and method for fabricating female terminal |
| CN103155306B (en) * | 2010-10-14 | 2015-09-30 | 矢崎总业株式会社 | The method of female end and manufacture female end |
| US9356412B2 (en) | 2010-10-14 | 2016-05-31 | Yazaki Corporation | Female terminal and method for fabricating female terminal |
| US9698554B2 (en) | 2010-10-14 | 2017-07-04 | Dowa Metaltech Co., Ltd. | Female terminal fabricating method |
| CN105821238A (en) * | 2016-05-31 | 2016-08-03 | 黄河科技学院 | Copper alloy material and preparing method thereof |
| CN106191725A (en) * | 2016-06-24 | 2016-12-07 | 河南江河机械有限责任公司 | High-intensity high-conductivity copper alloy nanometer phase precipitation technique method |
| CN106191725B (en) * | 2016-06-24 | 2018-01-26 | 河南江河机械有限责任公司 | High-intensity high-conductivity copper alloy nanometer phase precipitation technique method |
| CN108193080A (en) * | 2016-12-08 | 2018-06-22 | 北京有色金属研究总院 | High intensity, highly conductive proof stress relaxation corson alloy material and preparation method thereof |
| CN108193080B (en) * | 2016-12-08 | 2019-12-17 | 北京有色金属研究总院 | High-strength high-conductivity stress relaxation-resistant copper-nickel-silicon alloy material and preparation method thereof |
| CN109609801A (en) * | 2018-12-06 | 2019-04-12 | 宁波博威合金材料股份有限公司 | High property copper alloy and preparation method thereof |
| CN115386766A (en) * | 2022-08-11 | 2022-11-25 | 中国科学院金属研究所 | Cu-Ni-Si-Cr-Mg quinary copper alloy and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI395824B (en) | 2013-05-11 |
| EP2154257A1 (en) | 2010-02-17 |
| KR101211984B1 (en) | 2012-12-13 |
| TW200902732A (en) | 2009-01-16 |
| EP2154257B1 (en) | 2016-10-05 |
| US20100086435A1 (en) | 2010-04-08 |
| WO2008123433A1 (en) | 2008-10-16 |
| JPWO2008123433A1 (en) | 2010-07-15 |
| CN101646792B (en) | 2012-02-22 |
| JP4418028B2 (en) | 2010-02-17 |
| EP2154257A4 (en) | 2012-01-11 |
| KR20090123017A (en) | 2009-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101646792B (en) | Cu-Ni-Si-based alloy for electronic material | |
| CN101983249B (en) | Cu-ni-si-co-cr alloy for electronic material | |
| CN101541987B (en) | Cu-ni-si-co-base copper alloy for electronic material and process for producing the copper alloy | |
| CN101646791B (en) | Cu-ni-si-co-based copper alloy for electronic material, and method for production thereof | |
| JP4660735B2 (en) | Method for producing copper-based alloy sheet | |
| CN102227510B (en) | Cu-ni-si-co based copper ally for electronic materials and manufacturing method therefor | |
| CN101842506B (en) | Copper alloy material excellent in strength, bending workability and stress relaxation resistance, and method for producing the same | |
| CN101270423B (en) | Cu-Ni-Si based copper alloy for electronic material | |
| CN102099499B (en) | Cu-Co-Si copper alloy for use in electronics, and manufacturing method therefor | |
| CN102112641B (en) | Copper alloy material for electrical/electronic component | |
| WO2010126046A1 (en) | Cu-Ni-Si-Mg-BASED ALLOY HAVING IMPROVED ELECTRICAL CONDUCTIVITY AND BENDABILITY | |
| CN105392908A (en) | Copper alloy for electronic and electrical equipment, plastically worked copper alloy material for electronic and electrical equipment, and component and terminal for electronic and electrical equipment | |
| WO2006093140A1 (en) | Copper alloy | |
| JP2012126934A (en) | Cu-Ni-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL, AND METHOD FOR PRODUCING THE SAME | |
| EP2940166B1 (en) | Copper alloy for electrical and electronic equipment, copper alloy thin sheet for electrical and electronic equipment, and conductive part and terminal for electrical and electronic equipment | |
| JP4157899B2 (en) | High strength copper alloy sheet with excellent bending workability | |
| JP2013047360A (en) | Cu-Ni-Si-BASED ALLOY AND METHOD FOR PRODUCING THE SAME | |
| CN103052728B (en) | Copper-cobalt-silicon alloy for electrode material | |
| CN103339273A (en) | Cu-si-co-base copper alloy for electronic materials and method for producing same | |
| CN103140591A (en) | Cu-co-si-based alloy for electronic material and method of manufacturing the same | |
| JP4642119B2 (en) | Copper alloy and method for producing the same | |
| JP2013104068A (en) | Cu-Ni-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL | |
| KR20220000900A (en) | Titanium copper alloy strip containing Nb (Nb) and Al (Al) and manufacturing method thereof | |
| CN105283567A (en) | Copper alloy for electronic/electrical equipment, copper alloy thin sheet for electronic/electrical equipment, conductive component for electronic/electrical equipment, and terminal | |
| JP2008024995A (en) | Copper alloy plate for electrical/electronic component having excellent heat resistance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: JX NIPPON MINING + METALS CO., LTD. Free format text: FORMER OWNER: NIPPON MINING + METALS CO., LTD. Effective date: 20101117 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20101117 Address after: Tokyo, Japan, Japan Applicant after: JX Nippon Mining & Metals Co., Ltd. Address before: Tokyo, Japan, Japan Applicant before: Nippon Mining & Metals Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan, Japan Patentee before: JX Nippon Mining & Metals Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan, Japan Patentee before: JX NIPPON MINING & METALS CORPORATION |
|
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: No. 10-4, erdingmu, tiger gate, Tokyo port, Japan Patentee after: JKS Metal Co.,Ltd. Address before: Tokyo, Japan Patentee before: JKS Metal Co.,Ltd. |