KR20090015987A - 파장 변환 물질을 포함하는 광전자 반도체칩, 상기와 같은 반도체칩을 포함하는 광전자 반도체 소자 및 상기 광전자 반도체칩의 제조 방법 - Google Patents

파장 변환 물질을 포함하는 광전자 반도체칩, 상기와 같은 반도체칩을 포함하는 광전자 반도체 소자 및 상기 광전자 반도체칩의 제조 방법 Download PDF

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Publication number
KR20090015987A
KR20090015987A KR1020087031270A KR20087031270A KR20090015987A KR 20090015987 A KR20090015987 A KR 20090015987A KR 1020087031270 A KR1020087031270 A KR 1020087031270A KR 20087031270 A KR20087031270 A KR 20087031270A KR 20090015987 A KR20090015987 A KR 20090015987A
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KR
South Korea
Prior art keywords
wavelength
region
wavelength converting
radiation
semiconductor chip
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Ceased
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KR1020087031270A
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English (en)
Korean (ko)
Inventor
더크 벌벤
프랭크 예만
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20090015987A publication Critical patent/KR20090015987A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020087031270A 2006-05-23 2007-05-18 파장 변환 물질을 포함하는 광전자 반도체칩, 상기와 같은 반도체칩을 포함하는 광전자 반도체 소자 및 상기 광전자 반도체칩의 제조 방법 Ceased KR20090015987A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006024165.7 2006-05-23
DE102006024165A DE102006024165A1 (de) 2006-05-23 2006-05-23 Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips

Publications (1)

Publication Number Publication Date
KR20090015987A true KR20090015987A (ko) 2009-02-12

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KR1020087031270A Ceased KR20090015987A (ko) 2006-05-23 2007-05-18 파장 변환 물질을 포함하는 광전자 반도체칩, 상기와 같은 반도체칩을 포함하는 광전자 반도체 소자 및 상기 광전자 반도체칩의 제조 방법

Country Status (8)

Country Link
US (1) US7982233B2 (https=)
EP (1) EP2020038B1 (https=)
JP (1) JP2009537996A (https=)
KR (1) KR20090015987A (https=)
CN (1) CN101490860B (https=)
DE (1) DE102006024165A1 (https=)
TW (1) TWI390765B (https=)
WO (1) WO2007134582A1 (https=)

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KR20110108147A (ko) * 2010-03-26 2011-10-05 엘지이노텍 주식회사 발광소자 패키지 및 이를 구비한 라이트 유닛
KR101221870B1 (ko) * 2009-04-17 2013-01-15 한국전자통신연구원 태양 전지
KR20150136512A (ko) * 2013-03-25 2015-12-07 오스람 옵토 세미컨덕터스 게엠베하 전자기 방사선을 방출하는 어셈블리의 제조 방법 및 전자기 방사선을 방출하는 어셈블리
KR101632291B1 (ko) * 2014-12-11 2016-06-21 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트를 포함하는 led 응용제품
KR20160072837A (ko) * 2016-06-13 2016-06-23 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트의 제조방법
US10533729B2 (en) 2012-02-27 2020-01-14 Osram Gmbh Light source with LED chip and luminophore layer

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EP2380217A2 (en) 2008-12-24 2011-10-26 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
DE102009005907A1 (de) * 2009-01-23 2010-07-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil
KR100993045B1 (ko) * 2009-10-23 2010-11-08 엘지이노텍 주식회사 발광소자 칩 및 발광소자 패키지
WO2010134331A1 (en) * 2009-05-22 2010-11-25 Panasonic Corporation Semiconductor light-emitting device and light source device using the same
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CN102270732B (zh) * 2010-06-03 2015-06-10 展晶科技(深圳)有限公司 荧光层结构及其形成方法以及发光二极管封装结构
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US9431585B2 (en) 2010-09-29 2016-08-30 Koninklijke Philips Electronics N.V. Wavelength converted light emitting device
JP2013541220A (ja) * 2010-10-27 2013-11-07 コーニンクレッカ フィリップス エヌ ヴェ 発光デバイスの製造用のラミネート支持フィルム、及びその製造方法
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JP5762044B2 (ja) * 2011-02-23 2015-08-12 三菱電機株式会社 発光装置及び発光装置群及び製造方法
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KR20140038692A (ko) * 2012-09-21 2014-03-31 포항공과대학교 산학협력단 색변환 엘리먼트 및 그 제조방법
CN103852613B (zh) * 2012-11-29 2016-08-10 沈阳工业大学 一种辐射电流传感方法及专用传感器
DE102013207226A1 (de) * 2013-04-22 2014-10-23 Osram Opto Semiconductors Gmbh Herstellung eines Schichtelements für einen optoelektronischen Halbleiterchip
JP2015002182A (ja) * 2013-06-13 2015-01-05 日立アプライアンス株式会社 照明装置
TW201503421A (zh) * 2013-07-15 2015-01-16 Ind Tech Res Inst 發光二極體晶粒
DE102013214896B4 (de) * 2013-07-30 2021-09-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Konverterelements und eines optoelektronischen Bauelements, Konverterelement und optoelektronisches Bauelement
JP2015099911A (ja) * 2013-10-18 2015-05-28 株式会社エルム 蛍光体分離構造を備えた蛍光体含有フィルムおよびその製造方法
JP2015115480A (ja) * 2013-12-12 2015-06-22 株式会社エルム 発光装置及びその製造方法
DE102013114466A1 (de) * 2013-12-19 2015-06-25 Osram Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
WO2015170814A1 (en) * 2014-05-09 2015-11-12 Lg Electronics Inc. Apparatus of light source for display and apparatus of display using the same
JP2016062899A (ja) * 2014-09-12 2016-04-25 株式会社東芝 半導体発光装置
DE102015103835A1 (de) * 2015-03-16 2016-09-22 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement und Verfahren zur Herstellung eines lichtemittierenden Bauelements
CN104868026B (zh) 2015-05-22 2019-02-22 深圳市华星光电技术有限公司 量子点发光元件
CN107611232B (zh) * 2017-08-21 2019-02-05 天津三安光电有限公司 发光二极管及其制作方法
DE102017119872A1 (de) * 2017-08-30 2019-02-28 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
US20220254962A1 (en) * 2021-02-11 2022-08-11 Creeled, Inc. Optical arrangements in cover structures for light emitting diode packages and related methods

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KR101221870B1 (ko) * 2009-04-17 2013-01-15 한국전자통신연구원 태양 전지
KR20110108147A (ko) * 2010-03-26 2011-10-05 엘지이노텍 주식회사 발광소자 패키지 및 이를 구비한 라이트 유닛
US10533729B2 (en) 2012-02-27 2020-01-14 Osram Gmbh Light source with LED chip and luminophore layer
KR20150136512A (ko) * 2013-03-25 2015-12-07 오스람 옵토 세미컨덕터스 게엠베하 전자기 방사선을 방출하는 어셈블리의 제조 방법 및 전자기 방사선을 방출하는 어셈블리
KR101632291B1 (ko) * 2014-12-11 2016-06-21 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트를 포함하는 led 응용제품
KR20160072837A (ko) * 2016-06-13 2016-06-23 전남대학교산학협력단 고효율 형광체플레이트 및 상기 형광체플레이트의 제조방법

Also Published As

Publication number Publication date
JP2009537996A (ja) 2009-10-29
DE102006024165A1 (de) 2007-11-29
EP2020038A1 (de) 2009-02-04
US20090272998A1 (en) 2009-11-05
US7982233B2 (en) 2011-07-19
TW200802994A (en) 2008-01-01
CN101490860A (zh) 2009-07-22
CN101490860B (zh) 2011-08-31
TWI390765B (zh) 2013-03-21
WO2007134582A1 (de) 2007-11-29
EP2020038B1 (de) 2017-07-05

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