KR20090015966A - 재발광 반도체 구성을 갖는 개조된 led 소자 - Google Patents
재발광 반도체 구성을 갖는 개조된 led 소자 Download PDFInfo
- Publication number
- KR20090015966A KR20090015966A KR1020087030126A KR20087030126A KR20090015966A KR 20090015966 A KR20090015966 A KR 20090015966A KR 1020087030126 A KR1020087030126 A KR 1020087030126A KR 20087030126 A KR20087030126 A KR 20087030126A KR 20090015966 A KR20090015966 A KR 20090015966A
- Authority
- KR
- South Korea
- Prior art keywords
- led
- light
- emitting
- semiconductor construction
- emitting semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
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- 229910004613 CdTe Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
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- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
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- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133603—Direct backlight with LEDs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80480006P | 2006-06-14 | 2006-06-14 | |
| US60/804,800 | 2006-06-14 | ||
| US11/755,010 | 2007-05-30 | ||
| US11/755,010 US7902542B2 (en) | 2006-06-14 | 2007-05-30 | Adapted LED device with re-emitting semiconductor construction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20090015966A true KR20090015966A (ko) | 2009-02-12 |
Family
ID=38832675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087030126A Withdrawn KR20090015966A (ko) | 2006-06-14 | 2007-06-06 | 재발광 반도체 구성을 갖는 개조된 led 소자 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7902542B2 (https=) |
| EP (1) | EP2038941A2 (https=) |
| JP (1) | JP2009540614A (https=) |
| KR (1) | KR20090015966A (https=) |
| CN (1) | CN101467279B (https=) |
| TW (1) | TW200812118A (https=) |
| WO (1) | WO2007146709A2 (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7952110B2 (en) * | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
| US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
| CN101452982A (zh) * | 2007-11-29 | 2009-06-10 | 富士迈半导体精密工业(上海)有限公司 | 固态发光器件 |
| US20100295075A1 (en) * | 2007-12-10 | 2010-11-25 | 3M Innovative Properties Company | Down-converted light emitting diode with simplified light extraction |
| KR20120015337A (ko) | 2009-05-05 | 2012-02-21 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | Led에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법 |
| KR20120016261A (ko) | 2009-05-05 | 2012-02-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스 |
| EP2427922A1 (en) | 2009-05-05 | 2012-03-14 | 3M Innovative Properties Company | Re-emitting semiconductor construction with enhanced extraction efficiency |
| JP2012532454A (ja) | 2009-06-30 | 2012-12-13 | スリーエム イノベイティブ プロパティズ カンパニー | カドミウム非含有の再発光半導体構成体 |
| CN102473816B (zh) | 2009-06-30 | 2015-03-11 | 3M创新有限公司 | 基于电流拥挤调节颜色的电致发光装置 |
| EP2449856A1 (en) | 2009-06-30 | 2012-05-09 | 3M Innovative Properties Company | White light electroluminescent devices with adjustable color temperature |
| KR20120038539A (ko) | 2009-07-30 | 2012-04-23 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 픽셀화된 led |
| US20120032140A1 (en) * | 2009-09-18 | 2012-02-09 | Jingjing Li | Light-emitting diode including a metal-dielectric-metal structure |
| CN106025099B (zh) | 2011-04-12 | 2018-09-07 | 精工爱普生株式会社 | 发光元件、发光装置、认证装置以及电子设备 |
| JP5765034B2 (ja) | 2011-04-18 | 2015-08-19 | セイコーエプソン株式会社 | チアジアゾール系化合物、発光素子用化合物、発光素子、発光装置、認証装置および電子機器 |
| KR20130018547A (ko) | 2011-08-09 | 2013-02-25 | 세이코 엡슨 가부시키가이샤 | 티아디아졸계 화합물, 발광 소자, 발광 장치, 인증 장치, 전자 기기 |
| JP5790279B2 (ja) | 2011-08-09 | 2015-10-07 | セイコーエプソン株式会社 | 発光素子、発光装置および電子機器 |
| JP5970811B2 (ja) | 2011-12-28 | 2016-08-17 | セイコーエプソン株式会社 | 発光素子、発光装置および電子機器 |
| US9324952B2 (en) | 2012-02-28 | 2016-04-26 | Seiko Epson Corporation | Thiadiazole, compound for light-emitting elements, light-emitting element, light-emitting apparatus, authentication apparatus, and electronic device |
| CN103772416B (zh) | 2012-10-18 | 2018-01-19 | 精工爱普生株式会社 | 噻二唑系化合物、发光元件用化合物、发光元件、发光装置、认证装置以及电子设备 |
| JP6159642B2 (ja) * | 2013-10-16 | 2017-07-05 | 学校法人 名城大学 | 発光素子 |
| DE102014107472A1 (de) | 2014-05-27 | 2015-12-03 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Beleuchtungsvorrichtung |
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| DE102016015475B3 (de) * | 2016-12-28 | 2018-01-11 | 3-5 Power Electronics GmbH | IGBT Halbleiterstruktur |
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-
2007
- 2007-05-30 US US11/755,010 patent/US7902542B2/en not_active Expired - Fee Related
- 2007-06-06 EP EP07812041A patent/EP2038941A2/en not_active Withdrawn
- 2007-06-06 WO PCT/US2007/070533 patent/WO2007146709A2/en not_active Ceased
- 2007-06-06 JP JP2009515571A patent/JP2009540614A/ja active Pending
- 2007-06-06 CN CN2007800222560A patent/CN101467279B/zh not_active Expired - Fee Related
- 2007-06-06 KR KR1020087030126A patent/KR20090015966A/ko not_active Withdrawn
- 2007-06-13 TW TW096121337A patent/TW200812118A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2038941A2 (en) | 2009-03-25 |
| TW200812118A (en) | 2008-03-01 |
| CN101467279A (zh) | 2009-06-24 |
| US7902542B2 (en) | 2011-03-08 |
| WO2007146709A3 (en) | 2008-02-28 |
| JP2009540614A (ja) | 2009-11-19 |
| WO2007146709A2 (en) | 2007-12-21 |
| US20070290190A1 (en) | 2007-12-20 |
| CN101467279B (zh) | 2012-05-23 |
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