KR20080101654A - 반도체장치 - Google Patents

반도체장치 Download PDF

Info

Publication number
KR20080101654A
KR20080101654A KR1020080027205A KR20080027205A KR20080101654A KR 20080101654 A KR20080101654 A KR 20080101654A KR 1020080027205 A KR1020080027205 A KR 1020080027205A KR 20080027205 A KR20080027205 A KR 20080027205A KR 20080101654 A KR20080101654 A KR 20080101654A
Authority
KR
South Korea
Prior art keywords
single crystal
semiconductor layer
layer
substrate
crystal semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020080027205A
Other languages
English (en)
Korean (ko)
Inventor
요시푸미 타나다
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20080101654A publication Critical patent/KR20080101654A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/427—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer having different thicknesses of the semiconductor bodies in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/431—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different compositions, shapes, layouts or thicknesses of gate insulators in different TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020080027205A 2007-05-18 2008-03-25 반도체장치 Ceased KR20080101654A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00133382 2007-05-18
JP2007133382 2007-05-18

Publications (1)

Publication Number Publication Date
KR20080101654A true KR20080101654A (ko) 2008-11-21

Family

ID=40026596

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080027205A Ceased KR20080101654A (ko) 2007-05-18 2008-03-25 반도체장치

Country Status (4)

Country Link
US (1) US7750345B2 (https=)
JP (1) JP5527941B2 (https=)
KR (1) KR20080101654A (https=)
CN (2) CN102280409B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180015159A (ko) * 2015-06-09 2018-02-12 소이텍 전하를 트랩핑하기 위한 층을 포함하는 반도체 엘리먼트의 제조를 위한 프로세스

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8581260B2 (en) * 2007-02-22 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory
US8736587B2 (en) * 2008-07-10 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI474408B (zh) 2008-12-26 2015-02-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
JP5740132B2 (ja) 2009-10-26 2015-06-24 株式会社半導体エネルギー研究所 表示装置及び半導体装置
US8673426B2 (en) * 2011-06-29 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, method of manufacturing the driver circuit, and display device including the driver circuit
FR3058561B1 (fr) 2016-11-04 2018-11-02 Soitec Procede de fabrication d'un element semi-conducteur comprenant un substrat hautement resistif
JP6887307B2 (ja) * 2017-05-19 2021-06-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN107845646A (zh) * 2017-10-25 2018-03-27 上海中航光电子有限公司 一种阵列基板及其制作方法、显示面板和显示装置
KR102522888B1 (ko) * 2017-11-02 2023-04-19 도레이 카부시키가이샤 집적 회로 및 그의 제조 방법 그리고 그것을 사용한 무선 통신 장치
CN110620120B (zh) * 2019-09-25 2022-07-29 福州京东方光电科技有限公司 阵列基板及其制作方法、显示装置
WO2026033402A1 (ja) * 2024-08-09 2026-02-12 株式会社半導体エネルギー研究所 表示装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5475514A (en) * 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US5258325A (en) * 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US7075501B1 (en) * 1990-12-31 2006-07-11 Kopin Corporation Head mounted display system
US5256562A (en) * 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
JPH07504764A (ja) * 1992-03-13 1995-05-25 コピン・コーポレーシヨン 頭部取り付け表示系
JP2920580B2 (ja) * 1992-08-19 1999-07-19 セイコーインスツルメンツ株式会社 半導体装置
DE69322279T2 (de) * 1992-09-11 1999-06-24 Kopin Corp., Taunton, Mass. Farbfiltersystem fuer anzeigetafeln
US5705424A (en) * 1992-09-11 1998-01-06 Kopin Corporation Process of fabricating active matrix pixel electrodes
US5781164A (en) * 1992-11-04 1998-07-14 Kopin Corporation Matrix display systems
JP4286644B2 (ja) * 1996-01-19 2009-07-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10261803A (ja) * 1997-03-18 1998-09-29 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3943245B2 (ja) * 1997-09-20 2007-07-11 株式会社半導体エネルギー研究所 半導体装置
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
EP1020920B1 (en) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
US6576924B1 (en) * 1999-02-12 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate
JP3616534B2 (ja) * 1999-09-30 2005-02-02 沖電気工業株式会社 半導体基板の製造方法
JP4700160B2 (ja) * 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4811895B2 (ja) * 2001-05-02 2011-11-09 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
TW200302511A (en) * 2002-01-28 2003-08-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2003270665A (ja) * 2002-03-15 2003-09-25 Seiko Epson Corp 電気光学装置、及び電子機器
EP1495492B1 (de) * 2002-04-16 2010-06-02 Infineon Technologies AG Substrat und verfahren zum herstellen eines substrats
US7508034B2 (en) * 2002-09-25 2009-03-24 Sharp Kabushiki Kaisha Single-crystal silicon substrate, SOI substrate, semiconductor device, display device, and manufacturing method of semiconductor device
JP4837240B2 (ja) * 2002-09-25 2011-12-14 シャープ株式会社 半導体装置
JP2004319988A (ja) * 2003-03-31 2004-11-11 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法
CN1901228A (zh) * 2005-07-22 2007-01-24 精工爱普生株式会社 半导体装置以及半导体装置的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180015159A (ko) * 2015-06-09 2018-02-12 소이텍 전하를 트랩핑하기 위한 층을 포함하는 반도체 엘리먼트의 제조를 위한 프로세스

Also Published As

Publication number Publication date
CN101308853A (zh) 2008-11-19
US7750345B2 (en) 2010-07-06
CN102280409B (zh) 2015-11-25
JP2009004745A (ja) 2009-01-08
CN101308853B (zh) 2011-10-05
JP5527941B2 (ja) 2014-06-25
CN102280409A (zh) 2011-12-14
US20080283837A1 (en) 2008-11-20

Similar Documents

Publication Publication Date Title
JP5527941B2 (ja) 半導体装置
KR101970130B1 (ko) 표시장치
US8212319B2 (en) Semiconductor device comprising semiconductor film with recess
CN100499035C (zh) 半导体器件的制造方法
WO2005055178A1 (en) Display device, method for manufacturing the same, and television apparatus
JPWO2011142088A1 (ja) フレキシブル半導体装置およびその製造方法ならびに画像表示装置
JP2005115362A (ja) 表示装置及び表示装置の作製方法
US8324077B2 (en) Semiconductor device and manufacturing method thereof
US8324084B2 (en) Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20140812

Effective date: 20141127

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20141127

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2008 0027205

Appeal request date: 20140812

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2014101005001

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000