KR20080100195A - 반도체 디바이스 제조 방법 - Google Patents

반도체 디바이스 제조 방법 Download PDF

Info

Publication number
KR20080100195A
KR20080100195A KR1020087020173A KR20087020173A KR20080100195A KR 20080100195 A KR20080100195 A KR 20080100195A KR 1020087020173 A KR1020087020173 A KR 1020087020173A KR 20087020173 A KR20087020173 A KR 20087020173A KR 20080100195 A KR20080100195 A KR 20080100195A
Authority
KR
South Korea
Prior art keywords
layer
dielectric
applying
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020087020173A
Other languages
English (en)
Korean (ko)
Inventor
폴 제임스 로즈
이안 찰스 세이지
레이첼 페트리샤 투핀
Original Assignee
키네티큐 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 키네티큐 리미티드 filed Critical 키네티큐 리미티드
Publication of KR20080100195A publication Critical patent/KR20080100195A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020087020173A 2006-01-18 2007-01-12 반도체 디바이스 제조 방법 Withdrawn KR20080100195A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0601008.6 2006-01-18
GBGB0601008.6A GB0601008D0 (en) 2006-01-18 2006-01-18 Method of fabricating a semicondutor device

Publications (1)

Publication Number Publication Date
KR20080100195A true KR20080100195A (ko) 2008-11-14

Family

ID=36010525

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087020173A Withdrawn KR20080100195A (ko) 2006-01-18 2007-01-12 반도체 디바이스 제조 방법

Country Status (7)

Country Link
US (1) US20100320463A1 (cg-RX-API-DMAC7.html)
EP (1) EP1974400B1 (cg-RX-API-DMAC7.html)
JP (1) JP5276992B2 (cg-RX-API-DMAC7.html)
KR (1) KR20080100195A (cg-RX-API-DMAC7.html)
GB (1) GB0601008D0 (cg-RX-API-DMAC7.html)
TW (1) TW200733207A (cg-RX-API-DMAC7.html)
WO (1) WO2007083087A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8608972B2 (en) 2006-12-05 2013-12-17 Nano Terra Inc. Method for patterning a surface
JP2009111000A (ja) * 2007-10-26 2009-05-21 Konica Minolta Holdings Inc 有機半導体素子の製造方法、及び有機半導体素子
US9899339B2 (en) * 2012-11-05 2018-02-20 Texas Instruments Incorporated Discrete device mounted on substrate
JP5656966B2 (ja) * 2012-12-05 2015-01-21 独立行政法人科学技術振興機構 電界効果トランジスタ及びその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003513475A (ja) * 1999-11-02 2003-04-08 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 薄膜超小型電子装置間の垂直相互接続を形成する方法及びそのような垂直相互接続を備えた製品
EP1276824A4 (en) * 2000-04-21 2005-03-16 Stc Unm PROTOTYPING OF STRUCTURED, FUNCTIONAL NANOSTRUCTURES
US6586791B1 (en) * 2000-07-19 2003-07-01 3M Innovative Properties Company Transistor insulator layer incorporating superfine ceramic particles
DE10126860C2 (de) * 2001-06-01 2003-05-28 Siemens Ag Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen
US6767828B2 (en) * 2001-10-05 2004-07-27 International Business Machines Corporation Method for forming patterns for semiconductor devices
US6946676B2 (en) * 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6617609B2 (en) * 2001-11-05 2003-09-09 3M Innovative Properties Company Organic thin film transistor with siloxane polymer interface
US6949762B2 (en) * 2002-01-11 2005-09-27 Xerox Corporation Polythiophenes and devices thereof
JP2005086147A (ja) * 2003-09-11 2005-03-31 Sony Corp 金属単層膜形成方法、配線形成方法、及び、電界効果型トランジスタの製造方法
JP4407311B2 (ja) * 2004-02-20 2010-02-03 セイコーエプソン株式会社 薄膜トランジスタの製造方法
US20050279995A1 (en) * 2004-06-21 2005-12-22 Samsung Electronics Co., Ltd. Composition for preparing organic insulating film and organic insulating film prepared from the same
KR100560796B1 (ko) * 2004-06-24 2006-03-13 삼성에스디아이 주식회사 유기 박막트랜지스터 및 그의 제조방법

Also Published As

Publication number Publication date
GB0601008D0 (en) 2006-03-01
WO2007083087A1 (en) 2007-07-26
JP2009524231A (ja) 2009-06-25
JP5276992B2 (ja) 2013-08-28
EP1974400B1 (en) 2013-03-13
US20100320463A1 (en) 2010-12-23
TW200733207A (en) 2007-09-01
EP1974400A1 (en) 2008-10-01

Similar Documents

Publication Publication Date Title
JP4629997B2 (ja) 薄膜トランジスタ及び薄膜トランジスタアレイ
US8440518B2 (en) Method for manufacturing a pattern formed body, method for manufacturing a functional element, and method for manufacturing a semiconductor element
KR100707775B1 (ko) 박막 트랜지스터, 배선 기판, 표시 장치, 전자 기기 및 박막 트랜지스터의 제조 방법
EP1515378A2 (en) Method of forming electrodes for field effect transistors
US7799618B2 (en) Method of manufacturing semiconductor device, semiconductor device, display device, and electronic instrument
EP2122672B1 (en) Laminate structure and its manufacturing method
TWI677104B (zh) 薄膜電晶體、薄膜電晶體之製造方法及使用薄膜電晶體之影像顯示裝置
EP2050139A1 (en) Laminated structure, electronic element using the same, manufacturing method therefor, electronic element array, and display unit
EP2110856A1 (en) Thin film semiconductor device fabrication method and thin film semiconductor device
JP2009272523A (ja) 薄膜トランジスタおよび薄膜トランジスタの製造方法
EP1974400B1 (en) Method of fabricating a semiconductor device
JP2008529807A (ja) 表面のパターン処理および制御された析出成長物を用いたビアの製造
KR101050588B1 (ko) 유기절연막 패턴형성 방법
JP5325465B2 (ja) 薄膜トランジスタおよびそれを用いた装置
JP2006060113A (ja) 積層構造体、積層構造体を用いた電子素子、これらの製造方法、電子素子アレイ及び表示装置
JP2006060113A5 (cg-RX-API-DMAC7.html)
JP4730275B2 (ja) 薄膜トランジスタおよび薄膜トランジスタの製造方法
JP2009246123A (ja) 薄膜トランジスタの製造方法及びその製造方法により製造された薄膜トランジスタ
JP5458296B2 (ja) 微細加工構造及びその加工方法並びに電子デバイス及びその製造方法
JP4906934B2 (ja) 電子素子、電子素子アレイ及び表示装置
KR20100075061A (ko) 유기박막 트랜지스터 및 그 제조방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000