KR20080085169A - 백 콘택 광기전 전지 - Google Patents
백 콘택 광기전 전지 Download PDFInfo
- Publication number
- KR20080085169A KR20080085169A KR1020087017358A KR20087017358A KR20080085169A KR 20080085169 A KR20080085169 A KR 20080085169A KR 1020087017358 A KR1020087017358 A KR 1020087017358A KR 20087017358 A KR20087017358 A KR 20087017358A KR 20080085169 A KR20080085169 A KR 20080085169A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- layer
- electrical contact
- passivation layer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000002161 passivation Methods 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 76
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 44
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 27
- 238000010304 firing Methods 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims description 14
- 239000011574 phosphorus Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052787 antimony Inorganic materials 0.000 claims description 11
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 143
- 210000004027 cell Anatomy 0.000 description 78
- 229910052751 metal Inorganic materials 0.000 description 45
- 239000002184 metal Substances 0.000 description 45
- 230000008569 process Effects 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 25
- 229910052796 boron Inorganic materials 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 239000002019 doping agent Substances 0.000 description 24
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000005231 Edge Defined Film Fed Growth Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- -1 another metal Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/11—Photovoltaic cells having point contact potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75116805P | 2005-12-16 | 2005-12-16 | |
| US60/751,168 | 2005-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20080085169A true KR20080085169A (ko) | 2008-09-23 |
Family
ID=38655954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087017358A Ceased KR20080085169A (ko) | 2005-12-16 | 2006-12-07 | 백 콘택 광기전 전지 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20070137692A1 (enExample) |
| EP (1) | EP1961049A2 (enExample) |
| JP (1) | JP5193058B2 (enExample) |
| KR (1) | KR20080085169A (enExample) |
| CN (2) | CN101331614B (enExample) |
| AU (1) | AU2006342794A1 (enExample) |
| WO (1) | WO2007126441A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101139458B1 (ko) * | 2009-06-18 | 2012-04-30 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
Families Citing this family (78)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| DE10239845C1 (de) * | 2002-08-29 | 2003-12-24 | Day4 Energy Inc | Elektrode für fotovoltaische Zellen, fotovoltaische Zelle und fotovoltaischer Modul |
| US8637340B2 (en) | 2004-11-30 | 2014-01-28 | Solexel, Inc. | Patterning of silicon oxide layers using pulsed laser ablation |
| US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
| US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
| US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
| US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
| TWI401810B (zh) * | 2006-10-04 | 2013-07-11 | Gigastorage Corp | 太陽能電池 |
| US20080092944A1 (en) * | 2006-10-16 | 2008-04-24 | Leonid Rubin | Semiconductor structure and process for forming ohmic connections to a semiconductor structure |
| US7993700B2 (en) * | 2007-03-01 | 2011-08-09 | Applied Materials, Inc. | Silicon nitride passivation for a solar cell |
| US20080251121A1 (en) * | 2007-04-12 | 2008-10-16 | Charles Stone | Oxynitride passivation of solar cell |
| US20080290368A1 (en) * | 2007-05-21 | 2008-11-27 | Day4 Energy, Inc. | Photovoltaic cell with shallow emitter |
| US20100147368A1 (en) * | 2007-05-17 | 2010-06-17 | Day4 Energy Inc. | Photovoltaic cell with shallow emitter |
| DE102007042428A1 (de) * | 2007-09-06 | 2009-03-12 | Solarworld Industries Deutschland Gmbh | Verfahren zum Tempern von Halbleiter-Bauelementen |
| US9455362B2 (en) * | 2007-10-06 | 2016-09-27 | Solexel, Inc. | Laser irradiation aluminum doping for monocrystalline silicon substrates |
| US20100275976A1 (en) * | 2007-12-18 | 2010-11-04 | Day4 Energy Inc. | Photovoltaic module with edge access to pv strings, interconnection method, apparatus, and system |
| JP4999937B2 (ja) * | 2008-01-30 | 2012-08-15 | 京セラ株式会社 | 太陽電池素子および太陽電池素子の製造方法 |
| DE102008013446A1 (de) * | 2008-02-15 | 2009-08-27 | Ersol Solar Energy Ag | Verfahren zur Herstellung monokristalliner n-Silizium-Solarzellen sowie Solarzelle, hergestellt nach einem derartigen Verfahren |
| JP5306668B2 (ja) * | 2008-02-25 | 2013-10-02 | シャープ株式会社 | 光電変換モジュールの製造方法 |
| WO2009126186A1 (en) | 2008-04-10 | 2009-10-15 | Cardinal Ig Company | Manufacturing of photovoltaic subassemblies |
| US7838400B2 (en) * | 2008-07-17 | 2010-11-23 | Applied Materials, Inc. | Rapid thermal oxide passivated solar cell with improved junction |
| AU2008359970A1 (en) * | 2008-07-28 | 2010-02-04 | Day4 Energy Inc. | Crystalline silicon PV cell with selective emitter produced with low temperature precision etch back and passivation process |
| CN102119063A (zh) * | 2008-08-13 | 2011-07-06 | E.I.内穆尔杜邦公司 | 用于硅太阳能电池的多元素金属粉末 |
| US8294024B2 (en) * | 2008-08-13 | 2012-10-23 | E I Du Pont De Nemours And Company | Processes for forming photovoltaic devices |
| DE102008044882A1 (de) * | 2008-08-29 | 2010-03-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur lokalen Kontaktierung und lokalen Dotierung einer Halbleiterschicht |
| DE102008044910A1 (de) * | 2008-08-30 | 2010-03-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle und Solarzellenmodul mit einseitiger Verschaltung |
| KR20110086833A (ko) * | 2008-10-23 | 2011-08-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 소자 제조 방법, 반도체 소자 및 반도체 소자 제조 설비 |
| DE102009016268A1 (de) * | 2008-10-31 | 2010-05-12 | Bosch Solar Energy Ag | Solarzelle und Verfahren zu deren Herstellung |
| GB0820684D0 (en) * | 2008-11-12 | 2008-12-17 | Silicon Cpv Plc | Photovoltaic solar cells |
| US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| US8710355B2 (en) * | 2008-12-22 | 2014-04-29 | E I Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
| DE102009047778A1 (de) * | 2009-02-24 | 2010-09-02 | Bosch Solar Energy Ag | MWT-Halbleiter-Solarzelle mit einer Vielzahl von das halbleitende Material kontaktierenden, parallel zueinander verlaufenden schmalen leitfähigen Fingern vorgegebener Länge |
| US8409911B2 (en) * | 2009-02-24 | 2013-04-02 | Sunpower Corporation | Methods for metallization of solar cells |
| JP2012521662A (ja) | 2009-03-26 | 2012-09-13 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | 熱拡散ドープ領域中にレーザー焼成コンタクトを有する太陽電池セルのための装置及び方法 |
| DE102009018112B3 (de) * | 2009-04-20 | 2010-12-16 | Institut Für Solarenergieforschung Gmbh | Verfahren zur Herstellung eines Halbleiterbauelementes, insbesondere einer Solarzelle, mit einer lokal geöffneten Dielektrikumschicht sowie entsprechendes Halbleiterbauelement |
| EP2422377A4 (en) * | 2009-04-22 | 2013-12-04 | Tetrasun Inc | Localized metal contacts by localized laser assisted conversion of functional films in solar cells |
| WO2011011855A1 (en) * | 2009-07-31 | 2011-02-03 | Day4 Energy Inc. | Method for interconnecting back contact solar cells and photovoltaic module employing same |
| DE102009042018A1 (de) * | 2009-09-21 | 2011-03-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle |
| US20110094574A1 (en) * | 2009-10-27 | 2011-04-28 | Calisolar Inc. | Polarization Resistant Solar Cell Design Using SiCN |
| US8324015B2 (en) * | 2009-12-01 | 2012-12-04 | Sunpower Corporation | Solar cell contact formation using laser ablation |
| FR2953999B1 (fr) * | 2009-12-14 | 2012-01-20 | Total Sa | Cellule photovoltaique heterojonction a contact arriere |
| DE102010027747A1 (de) * | 2010-04-14 | 2011-10-20 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Photovoltaikmoduls mit rückseitenkontaktierten Halbleiterzellen und Photovoltaikmodul |
| CN102315309B (zh) * | 2010-06-30 | 2013-10-02 | 比亚迪股份有限公司 | 一种太阳能电池片的制备方法 |
| US8263899B2 (en) | 2010-07-01 | 2012-09-11 | Sunpower Corporation | High throughput solar cell ablation system |
| US20120048376A1 (en) * | 2010-08-30 | 2012-03-01 | Alexander Shkolnik | Silicon-based photovoltaic device produced by essentially electrical means |
| CN101937944A (zh) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | 双面钝化的晶体硅太阳电池的制备方法 |
| EP2472601A3 (en) | 2010-10-19 | 2013-05-01 | BP Corporation North America Inc. | Method Of Reducing Laser-Induced Damage In Forming Laser-Processed Contacts |
| TWI497737B (zh) * | 2010-12-02 | 2015-08-21 | Au Optronics Corp | 太陽能電池及其製造方法 |
| US8586403B2 (en) * | 2011-02-15 | 2013-11-19 | Sunpower Corporation | Process and structures for fabrication of solar cells with laser ablation steps to form contact holes |
| DE102011077469A1 (de) * | 2011-06-14 | 2012-12-20 | Robert Bosch Gmbh | Solarzellenmodul und Verfahren zu dessen Herstellung |
| KR101738000B1 (ko) | 2011-06-20 | 2017-05-19 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| US20140360567A1 (en) * | 2011-08-05 | 2014-12-11 | Solexel, Inc. | Back contact solar cells using aluminum-based alloy metallization |
| US8692111B2 (en) * | 2011-08-23 | 2014-04-08 | Sunpower Corporation | High throughput laser ablation processes and structures for forming contact holes in solar cells |
| KR20130047320A (ko) * | 2011-10-31 | 2013-05-08 | 삼성에스디아이 주식회사 | 태양전지와 그 제조 방법 |
| US20130146136A1 (en) * | 2011-12-13 | 2013-06-13 | Kyoung-Jin Seo | Photovoltaic device and method of manufacturing the same |
| WO2013101846A1 (en) * | 2011-12-26 | 2013-07-04 | Solexel, Inc. | Systems and methods for enhanced light trapping in solar cells |
| CN102569437B (zh) * | 2012-01-05 | 2014-05-07 | 中山大学 | 一种电场钝化背面点接触晶体硅太阳电池及其制备工艺 |
| WO2013152054A1 (en) * | 2012-04-02 | 2013-10-10 | Nusola Inc. | Photovoltaic cell and process of manufacture |
| US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
| US20130255774A1 (en) * | 2012-04-02 | 2013-10-03 | Nusola, Inc. | Photovoltaic cell and process of manufacture |
| GB2508792A (en) | 2012-09-11 | 2014-06-18 | Rec Modules Pte Ltd | Back contact solar cell cell interconnection arrangements |
| CN102881737A (zh) * | 2012-10-15 | 2013-01-16 | 浙江正泰太阳能科技有限公司 | 体结背接触太阳能电池 |
| CN102931283B (zh) * | 2012-11-14 | 2014-12-10 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | 一种高效晶体硅太阳电池背面钝化的方法 |
| US9812592B2 (en) | 2012-12-21 | 2017-11-07 | Sunpower Corporation | Metal-foil-assisted fabrication of thin-silicon solar cell |
| JP6141223B2 (ja) | 2013-06-14 | 2017-06-07 | 三菱電機株式会社 | 受光素子モジュールおよびその製造方法 |
| JP6700654B2 (ja) * | 2014-10-21 | 2020-05-27 | シャープ株式会社 | ヘテロバックコンタクト型太陽電池とその製造方法 |
| EP3163632A1 (en) * | 2015-11-02 | 2017-05-03 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Photovoltaic device and method for manufacturing the same |
| CN105590971B (zh) * | 2016-03-18 | 2017-02-08 | 南京大学 | AlGaN日盲紫外增强型雪崩光电探测器及其制备方法 |
| CN105633178B (zh) * | 2016-03-21 | 2017-10-17 | 无锡携创新能源科技有限公司 | 一种背接触工艺电池片及其制作方法 |
| CN106208145B (zh) * | 2016-08-26 | 2019-10-11 | 国网山西省电力公司大同供电公司 | 一种供电系统 |
| DE102018001057B4 (de) * | 2018-02-07 | 2025-12-04 | Ce Cell Engineering Gmbh | Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle |
| CN109935645A (zh) * | 2019-02-27 | 2019-06-25 | 镇江仁德新能源科技有限公司 | 一种干法黑硅片的高效量产制备方法 |
| CN117577697B (zh) * | 2024-01-16 | 2024-05-03 | 金阳(泉州)新能源科技有限公司 | 具有特定正面钝化结构的背接触电池及其制备方法和应用 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2639841C3 (de) * | 1976-09-03 | 1980-10-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Solarzelle und Verfahren zu ihrer Herstellung |
| US4234352A (en) * | 1978-07-26 | 1980-11-18 | Electric Power Research Institute, Inc. | Thermophotovoltaic converter and cell for use therein |
| US4836861A (en) * | 1987-04-24 | 1989-06-06 | Tactical Fabs, Inc. | Solar cell and cell mount |
| US4824489A (en) * | 1988-02-02 | 1989-04-25 | Sera Solar Corporation | Ultra-thin solar cell and method |
| US4927770A (en) * | 1988-11-14 | 1990-05-22 | Electric Power Research Inst. Corp. Of District Of Columbia | Method of fabricating back surface point contact solar cells |
| JP3203078B2 (ja) * | 1992-12-09 | 2001-08-27 | 三洋電機株式会社 | 光起電力素子 |
| US5395457A (en) * | 1992-12-16 | 1995-03-07 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing the same |
| US6265652B1 (en) * | 1995-06-15 | 2001-07-24 | Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha | Integrated thin-film solar battery and method of manufacturing the same |
| AUPP437598A0 (en) * | 1998-06-29 | 1998-07-23 | Unisearch Limited | A self aligning method for forming a selective emitter and metallization in a solar cell |
| WO2000070889A1 (en) * | 1999-05-14 | 2000-11-23 | Medtronic Physio-Control Manufacturing Corp. | Method and apparatus for remote wireless communication with a medical device |
| US6274402B1 (en) * | 1999-12-30 | 2001-08-14 | Sunpower Corporation | Method of fabricating a silicon solar cell |
| US6337283B1 (en) * | 1999-12-30 | 2002-01-08 | Sunpower Corporation | Method of fabricating a silicon solar cell |
| JP2001217443A (ja) * | 2000-02-04 | 2001-08-10 | Sony Corp | 半導体素子およびその製造方法、太陽電池およびその製造方法ならびに半導体素子を用いた光学素子 |
| DE10046170A1 (de) * | 2000-09-19 | 2002-04-04 | Fraunhofer Ges Forschung | Verfahren zur Herstellung eines Halbleiter-Metallkontaktes durch eine dielektrische Schicht |
| JP2004047824A (ja) * | 2002-07-12 | 2004-02-12 | Honda Motor Co Ltd | 太陽電池とその製造方法 |
| US7388147B2 (en) * | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US20050268963A1 (en) * | 2004-02-24 | 2005-12-08 | David Jordan | Process for manufacturing photovoltaic cells |
-
2006
- 2006-12-01 US US11/565,738 patent/US20070137692A1/en not_active Abandoned
- 2006-12-07 KR KR1020087017358A patent/KR20080085169A/ko not_active Ceased
- 2006-12-07 AU AU2006342794A patent/AU2006342794A1/en not_active Abandoned
- 2006-12-07 EP EP06851200A patent/EP1961049A2/en not_active Withdrawn
- 2006-12-07 CN CN2006800472453A patent/CN101331614B/zh not_active Expired - Fee Related
- 2006-12-07 CN CN2011100941957A patent/CN102157569A/zh active Pending
- 2006-12-07 WO PCT/US2006/061725 patent/WO2007126441A2/en not_active Ceased
- 2006-12-07 JP JP2008545917A patent/JP5193058B2/ja not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101139458B1 (ko) * | 2009-06-18 | 2012-04-30 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
| US9337359B2 (en) | 2009-06-18 | 2016-05-10 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101331614B (zh) | 2011-06-08 |
| CN102157569A (zh) | 2011-08-17 |
| WO2007126441A3 (en) | 2008-04-17 |
| JP5193058B2 (ja) | 2013-05-08 |
| JP2009520369A (ja) | 2009-05-21 |
| US20070137692A1 (en) | 2007-06-21 |
| CN101331614A (zh) | 2008-12-24 |
| EP1961049A2 (en) | 2008-08-27 |
| WO2007126441A2 (en) | 2007-11-08 |
| AU2006342794A1 (en) | 2007-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5193058B2 (ja) | バックコンタクト太陽電池 | |
| US20070295399A1 (en) | Back-Contact Photovoltaic Cells | |
| US20060130891A1 (en) | Back-contact photovoltaic cells | |
| KR101561682B1 (ko) | 깊은 홈 후측 콘택 광발전 태양 전지들 | |
| US8110431B2 (en) | Ion implanted selective emitter solar cells with in situ surface passivation | |
| US8071418B2 (en) | Selective emitter solar cells formed by a hybrid diffusion and ion implantation process | |
| JP2010521824A (ja) | 太陽電池 | |
| US20050268963A1 (en) | Process for manufacturing photovoltaic cells | |
| US20050189013A1 (en) | Process for manufacturing photovoltaic cells | |
| KR20090091562A (ko) | 태양전지 및 그 제조방법 | |
| KR20130052627A (ko) | 선택적 전면 필드를 구비한 후면 접합 태양전지 | |
| KR20170029652A (ko) | 후면 콘택 헤테로 접합 광전지 | |
| US20140238478A1 (en) | Back junction solar cell with enhanced emitter layer | |
| JP2015106624A (ja) | 太陽電池の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20080716 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20111207 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20130629 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20130911 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20130629 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |