KR20080085169A - 백 콘택 광기전 전지 - Google Patents

백 콘택 광기전 전지 Download PDF

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Publication number
KR20080085169A
KR20080085169A KR1020087017358A KR20087017358A KR20080085169A KR 20080085169 A KR20080085169 A KR 20080085169A KR 1020087017358 A KR1020087017358 A KR 1020087017358A KR 20087017358 A KR20087017358 A KR 20087017358A KR 20080085169 A KR20080085169 A KR 20080085169A
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KR
South Korea
Prior art keywords
wafer
layer
electrical contact
passivation layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087017358A
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English (en)
Korean (ko)
Inventor
데이비드 이 칼슨
Original Assignee
비피 코포레이션 노쓰 아메리카 인코포레이티드
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Application filed by 비피 코포레이션 노쓰 아메리카 인코포레이티드 filed Critical 비피 코포레이션 노쓰 아메리카 인코포레이티드
Publication of KR20080085169A publication Critical patent/KR20080085169A/ko
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215Geometries of grid contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/11Photovoltaic cells having point contact potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/703Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
KR1020087017358A 2005-12-16 2006-12-07 백 콘택 광기전 전지 Ceased KR20080085169A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US75116805P 2005-12-16 2005-12-16
US60/751,168 2005-12-16

Publications (1)

Publication Number Publication Date
KR20080085169A true KR20080085169A (ko) 2008-09-23

Family

ID=38655954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087017358A Ceased KR20080085169A (ko) 2005-12-16 2006-12-07 백 콘택 광기전 전지

Country Status (7)

Country Link
US (1) US20070137692A1 (enExample)
EP (1) EP1961049A2 (enExample)
JP (1) JP5193058B2 (enExample)
KR (1) KR20080085169A (enExample)
CN (2) CN101331614B (enExample)
AU (1) AU2006342794A1 (enExample)
WO (1) WO2007126441A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101139458B1 (ko) * 2009-06-18 2012-04-30 엘지전자 주식회사 태양전지 및 그 제조방법

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US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
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Also Published As

Publication number Publication date
CN101331614B (zh) 2011-06-08
CN102157569A (zh) 2011-08-17
WO2007126441A3 (en) 2008-04-17
JP5193058B2 (ja) 2013-05-08
JP2009520369A (ja) 2009-05-21
US20070137692A1 (en) 2007-06-21
CN101331614A (zh) 2008-12-24
EP1961049A2 (en) 2008-08-27
WO2007126441A2 (en) 2007-11-08
AU2006342794A1 (en) 2007-11-08

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