KR20080073331A - 전도성 층의 패턴화 방법 및 장치, 및 이에 의해 제조된장치 - Google Patents

전도성 층의 패턴화 방법 및 장치, 및 이에 의해 제조된장치 Download PDF

Info

Publication number
KR20080073331A
KR20080073331A KR1020087014313A KR20087014313A KR20080073331A KR 20080073331 A KR20080073331 A KR 20080073331A KR 1020087014313 A KR1020087014313 A KR 1020087014313A KR 20087014313 A KR20087014313 A KR 20087014313A KR 20080073331 A KR20080073331 A KR 20080073331A
Authority
KR
South Korea
Prior art keywords
layer
stack
conductive layer
conductive
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087014313A
Other languages
English (en)
Korean (ko)
Inventor
하랄드 발터
틸만 바이얼라인
Original Assignee
시바 홀딩 인크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시바 홀딩 인크 filed Critical 시바 홀딩 인크
Publication of KR20080073331A publication Critical patent/KR20080073331A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Laminated Bodies (AREA)
KR1020087014313A 2005-11-14 2006-11-14 전도성 층의 패턴화 방법 및 장치, 및 이에 의해 제조된장치 Ceased KR20080073331A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0523163.4 2005-11-14
GBGB0523163.4A GB0523163D0 (en) 2005-11-14 2005-11-14 Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack

Publications (1)

Publication Number Publication Date
KR20080073331A true KR20080073331A (ko) 2008-08-08

Family

ID=35516877

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087014313A Ceased KR20080073331A (ko) 2005-11-14 2006-11-14 전도성 층의 패턴화 방법 및 장치, 및 이에 의해 제조된장치

Country Status (7)

Country Link
US (1) US20090038683A1 (https=)
EP (1) EP1949469A2 (https=)
JP (1) JP2009516382A (https=)
KR (1) KR20080073331A (https=)
CN (2) CN103199196A (https=)
GB (1) GB0523163D0 (https=)
WO (1) WO2007074404A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101474977B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판
KR101474980B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2432722A (en) * 2005-11-25 2007-05-30 Seiko Epson Corp Electrochemical cell and method of manufacture
GB2432721B (en) * 2005-11-25 2011-06-22 Seiko Epson Corp Electrochemical cell structure and method of fabrication
GB2432723B (en) * 2005-11-25 2010-12-08 Seiko Epson Corp Electrochemical cell and method of manufacture
JP2010525381A (ja) * 2007-04-19 2010-07-22 ビーエーエスエフ ソシエタス・ヨーロピア 基板上のパターン形成方法およびそれによって形成された電子素子
US20090283137A1 (en) * 2008-05-15 2009-11-19 Steven Thomas Croft Solar-cell module with in-laminate diodes and external-connection mechanisms mounted to respective edge regions
FR2934714B1 (fr) 2008-07-31 2010-12-17 Commissariat Energie Atomique Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor.
GB2467316B (en) * 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions
WO2010017441A2 (en) * 2008-08-07 2010-02-11 Massachusetts Institute Of Technology Method and apparatus for simultaneous lateral and vertical patterning of molecular organic films
US9059351B2 (en) 2008-11-04 2015-06-16 Apollo Precision (Fujian) Limited Integrated diode assemblies for photovoltaic modules
US8586857B2 (en) * 2008-11-04 2013-11-19 Miasole Combined diode, lead assembly incorporating an expansion joint
WO2010061035A1 (en) * 2008-11-27 2010-06-03 Upm-Kymmene Corporation Embossing of electronic thin-film components
JP2010237375A (ja) * 2009-03-31 2010-10-21 Mitsui Chemicals Inc 微細構造体およびそれを用いた光学素子
US20100319765A1 (en) * 2009-06-17 2010-12-23 Korea University Research And Business Foundation Photovoltaic devices
US8853664B2 (en) 2009-07-28 2014-10-07 Sharp Kabushiki Kaisha Organic element and organic device including the same
US8153528B1 (en) * 2009-11-20 2012-04-10 Integrated Photovoltaic, Inc. Surface characteristics of graphite and graphite foils
US20110146778A1 (en) * 2009-12-22 2011-06-23 Miasole Shielding of interior diode assemblies from compression forces in thin-film photovoltaic modules
US9139093B2 (en) * 2010-12-02 2015-09-22 Seiko Epson Corporation Printed matter manufacturing method, printed matter manufacturing device, and printed matter
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
CA2819899A1 (en) * 2011-02-01 2012-08-09 University Of South Florida A partially-sprayed layer organic solar photovoltaic cell using a self-assembled monolayer and method of manufacture
EP2833427A4 (en) 2012-05-09 2016-02-24 Lg Chemical Ltd ORGANIC ELECTROCHEMICAL DEVICE AND METHOD FOR THE PRODUCTION THEREOF
US9496458B2 (en) * 2012-06-08 2016-11-15 Cree, Inc. Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
WO2014145609A1 (en) 2013-03-15 2014-09-18 University Of South Florida Mask-stack-shift method to fabricate organic solar array by spray
CN104681743B (zh) * 2013-11-29 2017-02-15 清华大学 有机发光二极管的制备方法
GB2526316B (en) * 2014-05-20 2018-10-31 Flexenable Ltd Production of transistor arrays
KR102224824B1 (ko) * 2014-05-30 2021-03-08 삼성전자 주식회사 Ito 전극패턴을 포함하는 전자장치 및 그 전자장치의 제조방법
WO2016115040A1 (en) * 2015-01-12 2016-07-21 Dolby Laboratories Licensing Corporation Pixel tile structures and layouts
US10023971B2 (en) * 2015-03-03 2018-07-17 The Trustees Of Boston College Aluminum nanowire arrays and methods of preparation and use thereof
US20170179201A1 (en) * 2015-12-16 2017-06-22 General Electric Company Processes for fabricating organic photodetectors and related photodetectors and systems
KR102660202B1 (ko) * 2016-11-30 2024-04-26 삼성디스플레이 주식회사 윈도우 기판 및 이를 구비하는 표시 장치
US11190868B2 (en) 2017-04-18 2021-11-30 Massachusetts Institute Of Technology Electrostatic acoustic transducer utilized in a headphone device or an earbud
CN113745366B (zh) * 2020-05-14 2024-03-12 杭州纤纳光电科技有限公司 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3628243A (en) * 1969-11-14 1971-12-21 Bell Telephone Labor Inc Fabrication of printed circuit
DE19652818A1 (de) * 1996-12-18 1998-07-02 Priesemuth W Verfahren zum Herstellen einer Solarzelle sowie Solarzelle
KR20010106470A (ko) * 1999-07-09 2001-11-29 추후제출 소자층의 기계적 형상화
US6294398B1 (en) * 1999-11-23 2001-09-25 The Trustees Of Princeton University Method for patterning devices
GB0024294D0 (en) * 2000-10-04 2000-11-15 Univ Cambridge Tech Solid state embossing of polymer devices
WO2004032257A2 (de) * 2002-10-02 2004-04-15 Leonhard Kurz Gmbh & Co. Kg Folie mit organischen halbleitern
GB0229191D0 (en) * 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
JP2004319762A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
JP2004314238A (ja) * 2003-04-16 2004-11-11 Canon Inc ナノ構造体の製造方法及びナノ構造体
FI20030919L (fi) * 2003-06-19 2004-12-20 Avantone Oy Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti
GB0315477D0 (en) * 2003-07-02 2003-08-06 Plastic Logic Ltd Rectifying diodes
ATE451717T1 (de) * 2003-09-29 2009-12-15 Ibm Herstellungsverfahren
WO2005116521A1 (en) * 2004-05-28 2005-12-08 Tir Systems Ltd. Luminance enhancement apparatus and method
GB2416428A (en) * 2004-07-19 2006-01-25 Seiko Epson Corp Method for fabricating a semiconductor element from a dispersion of semiconductor particles
DE102005013125B4 (de) * 2005-03-18 2008-12-18 O-Flexx Technologies Gmbh Verfahren zur Herstellung von elektronischen Einheiten in einer mehrlagigen Ausgangsstruktur sowie Verwendung dieser Ausgangstruktur im Verfahren
DE102005022000B8 (de) * 2005-05-09 2010-08-12 O-Flexx Technologies Gmbh Verfahren zur Herstellung von elektronischen Einheiten aus zwei mehrlagigen Ausgangsstrukturen und deren Verwendung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101474977B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판
KR101474980B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판

Also Published As

Publication number Publication date
WO2007074404A3 (en) 2007-11-15
US20090038683A1 (en) 2009-02-12
GB0523163D0 (en) 2005-12-21
CN101331624A (zh) 2008-12-24
WO2007074404A2 (en) 2007-07-05
CN103199196A (zh) 2013-07-10
EP1949469A2 (en) 2008-07-30
JP2009516382A (ja) 2009-04-16

Similar Documents

Publication Publication Date Title
KR20080073331A (ko) 전도성 층의 패턴화 방법 및 장치, 및 이에 의해 제조된장치
US20080012151A1 (en) Method and an Apparatus for Manufacturing an Electronic Thin-Film Component and an Electronic Thin-Film Component
US8951601B2 (en) Electrochemical cell structure and method of fabrication
US8372731B2 (en) Device fabrication by ink-jet printing materials into bank structures, and embossing tool
EP2306544B1 (en) Method of fabricating organic devices by stamping
Lian et al. Highly conductive silver nanowire transparent electrode by selective welding for organic light emitting diode
US20050272263A1 (en) Roll to roll manufacturing of organic solar modules
JP2018092937A (ja) 透明導電体
KR102098603B1 (ko) 제 1 전극, 활성층 및 제 2 전극을 포함하는 타입의 스택 제조방법
CN1666346A (zh) 含有场效应晶体管的集成电路及其制造方法
WO2006078321A1 (en) Tapered masks for deposition of materiel for organic electronic devices
EP3214655A1 (en) Thin-film transistor and method for producing same
Piliego et al. Organic light emitting diodes with highly conductive micropatterned polymer anodes
NL2006756C2 (en) Method for forming an electrode layer with a low work function, and electrode layer.
EP2433320B1 (en) Method of manufacturing electronic devices
CN101536208A (zh) 制造电气器件的方法
JP5870502B2 (ja) 有機半導体素子およびその製造方法
KR20160095447A (ko) 도전체 및 그 제조 방법
Kusaka et al. Rewetting of semi-dried ink patterns by vapour annealing for developing a reflow process in reverse offset printing
TWI422085B (zh) 製造電子構件的方法
EP2011174B1 (en) Method of Making Conductive Polymer Electrodes
KR20150068293A (ko) 미세 구조체를 갖는 기판, 및 그 제조 방법
EP2784840A2 (en) Organic device and manufacturing method thereof

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20080613

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20111111

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20120918

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20130627

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20120918

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I