GB0523163D0 - Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack - Google Patents

Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack

Info

Publication number
GB0523163D0
GB0523163D0 GBGB0523163.4A GB0523163A GB0523163D0 GB 0523163 D0 GB0523163 D0 GB 0523163D0 GB 0523163 A GB0523163 A GB 0523163A GB 0523163 D0 GB0523163 D0 GB 0523163D0
Authority
GB
United Kingdom
Prior art keywords
spacer layer
patterning
conductive layers
layer stack
underlying compressible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0523163.4A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CSEM Centre Suisse dElectronique et de Microtechnique SA Recherche et Développement
Original Assignee
CSEM Centre Suisse dElectronique et de Microtechnique SA Recherche et Développement
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CSEM Centre Suisse dElectronique et de Microtechnique SA Recherche et Développement filed Critical CSEM Centre Suisse dElectronique et de Microtechnique SA Recherche et Développement
Priority to GBGB0523163.4A priority Critical patent/GB0523163D0/en
Publication of GB0523163D0 publication Critical patent/GB0523163D0/en
Priority to CN2013100775890A priority patent/CN103199196A/zh
Priority to CNA2006800424695A priority patent/CN101331624A/zh
Priority to KR1020087014313A priority patent/KR20080073331A/ko
Priority to JP2008540722A priority patent/JP2009516382A/ja
Priority to US12/084,749 priority patent/US20090038683A1/en
Priority to PCT/IB2006/003995 priority patent/WO2007074404A2/en
Priority to EP06848961A priority patent/EP1949469A2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
GBGB0523163.4A 2005-11-14 2005-11-14 Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack Ceased GB0523163D0 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
GBGB0523163.4A GB0523163D0 (en) 2005-11-14 2005-11-14 Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack
CN2013100775890A CN103199196A (zh) 2005-11-14 2006-11-14 布图传导层的方法和器件及其生产的部件
CNA2006800424695A CN101331624A (zh) 2005-11-14 2006-11-14 布图传导层的方法和装置及其生产的部件
KR1020087014313A KR20080073331A (ko) 2005-11-14 2006-11-14 전도성 층의 패턴화 방법 및 장치, 및 이에 의해 제조된장치
JP2008540722A JP2009516382A (ja) 2005-11-14 2006-11-14 導電層をパターニングするための方法および装置ならびにそれによって製造されるデバイス
US12/084,749 US20090038683A1 (en) 2005-11-14 2006-11-14 Method and Apparatus for Patterning a Conductive Layer, and a Device Produced Thereby
PCT/IB2006/003995 WO2007074404A2 (en) 2005-11-14 2006-11-14 Method and apparatus for patterning a conductive layer, and a device produced thereby
EP06848961A EP1949469A2 (en) 2005-11-14 2006-11-14 Method and apparatus for patterning a conductive layer, and a device produced thereby

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0523163.4A GB0523163D0 (en) 2005-11-14 2005-11-14 Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack

Publications (1)

Publication Number Publication Date
GB0523163D0 true GB0523163D0 (en) 2005-12-21

Family

ID=35516877

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0523163.4A Ceased GB0523163D0 (en) 2005-11-14 2005-11-14 Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack

Country Status (7)

Country Link
US (1) US20090038683A1 (https=)
EP (1) EP1949469A2 (https=)
JP (1) JP2009516382A (https=)
KR (1) KR20080073331A (https=)
CN (2) CN103199196A (https=)
GB (1) GB0523163D0 (https=)
WO (1) WO2007074404A2 (https=)

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GB2432722A (en) * 2005-11-25 2007-05-30 Seiko Epson Corp Electrochemical cell and method of manufacture
CA2682928A1 (en) * 2007-04-19 2008-10-30 Basf Se Method for forming a pattern on a substrate and electronic device formed thereby
US20090283137A1 (en) * 2008-05-15 2009-11-19 Steven Thomas Croft Solar-cell module with in-laminate diodes and external-connection mechanisms mounted to respective edge regions
GB2467316B (en) * 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
FR2934714B1 (fr) * 2008-07-31 2010-12-17 Commissariat Energie Atomique Transistor organique et procede de fabrication d'une couche dielectrique d'un tel transistor.
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions
WO2010017441A2 (en) * 2008-08-07 2010-02-11 Massachusetts Institute Of Technology Method and apparatus for simultaneous lateral and vertical patterning of molecular organic films
US8586857B2 (en) * 2008-11-04 2013-11-19 Miasole Combined diode, lead assembly incorporating an expansion joint
US9059351B2 (en) 2008-11-04 2015-06-16 Apollo Precision (Fujian) Limited Integrated diode assemblies for photovoltaic modules
WO2010061035A1 (en) * 2008-11-27 2010-06-03 Upm-Kymmene Corporation Embossing of electronic thin-film components
JP2010237375A (ja) * 2009-03-31 2010-10-21 Mitsui Chemicals Inc 微細構造体およびそれを用いた光学素子
US20100319765A1 (en) * 2009-06-17 2010-12-23 Korea University Research And Business Foundation Photovoltaic devices
WO2011013275A1 (ja) * 2009-07-28 2011-02-03 シャープ株式会社 有機素子及びそれを備えた有機デバイス
US8153528B1 (en) * 2009-11-20 2012-04-10 Integrated Photovoltaic, Inc. Surface characteristics of graphite and graphite foils
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EP2671270A2 (en) 2011-02-01 2013-12-11 University Of South Florida A partially-sprayed layer organic solar photovoltaic cell using a self-assembled monolayer and method of manufacture
IN2014DN09305A (https=) 2012-05-09 2015-07-10 Lg Chemical Ltd
US9496458B2 (en) * 2012-06-08 2016-11-15 Cree, Inc. Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
WO2014145609A1 (en) 2013-03-15 2014-09-18 University Of South Florida Mask-stack-shift method to fabricate organic solar array by spray
CN104681743B (zh) * 2013-11-29 2017-02-15 清华大学 有机发光二极管的制备方法
KR101474977B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판
KR101474980B1 (ko) * 2014-02-13 2014-12-22 한국기계연구원 가열 롤 임프린팅 방법 및 이 방법으로 제조된 금속 그리드 메쉬 플라스틱 기판
GB2526316B (en) * 2014-05-20 2018-10-31 Flexenable Ltd Production of transistor arrays
KR102224824B1 (ko) * 2014-05-30 2021-03-08 삼성전자 주식회사 Ito 전극패턴을 포함하는 전자장치 및 그 전자장치의 제조방법
US10700052B2 (en) 2015-01-12 2020-06-30 Dolby Laboratories Licensing Corporation Pixel tile structures and layouts
US10023971B2 (en) * 2015-03-03 2018-07-17 The Trustees Of Boston College Aluminum nanowire arrays and methods of preparation and use thereof
US20170179201A1 (en) * 2015-12-16 2017-06-22 General Electric Company Processes for fabricating organic photodetectors and related photodetectors and systems
KR102660202B1 (ko) * 2016-11-30 2024-04-26 삼성디스플레이 주식회사 윈도우 기판 및 이를 구비하는 표시 장치
US10986435B2 (en) 2017-04-18 2021-04-20 Massachusetts Institute Of Technology Electrostatic acoustic transducer utilized in a hearing aid or audio processing system
CN113745366B (zh) * 2020-05-14 2024-03-12 杭州纤纳光电科技有限公司 一种钙钛矿与晶硅的三结叠层太阳能电池及其制备方法

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Also Published As

Publication number Publication date
US20090038683A1 (en) 2009-02-12
WO2007074404A2 (en) 2007-07-05
CN101331624A (zh) 2008-12-24
KR20080073331A (ko) 2008-08-08
WO2007074404A3 (en) 2007-11-15
CN103199196A (zh) 2013-07-10
EP1949469A2 (en) 2008-07-30
JP2009516382A (ja) 2009-04-16

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)