KR20080034001A - 로우-ｋ 에칭 이후의 무손상 애싱 프로세스 및 시스템 - Google Patents

로우-ｋ 에칭 이후의 무손상 애싱 프로세스 및 시스템 Download PDF

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Publication number
KR20080034001A
KR20080034001A KR1020087004579A KR20087004579A KR20080034001A KR 20080034001 A KR20080034001 A KR 20080034001A KR 1020087004579 A KR1020087004579 A KR 1020087004579A KR 20087004579 A KR20087004579 A KR 20087004579A KR 20080034001 A KR20080034001 A KR 20080034001A
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KR
South Korea
Prior art keywords
dielectric layer
containing gas
plasma processing
substrate
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087004579A
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English (en)
Korean (ko)
Inventor
마사루 니시노
더글라스 엠 트릭켓
Original Assignee
동경 엘렉트론 주식회사
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Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20080034001A publication Critical patent/KR20080034001A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020087004579A 2005-08-03 2006-05-24 로우-ｋ 에칭 이후의 무손상 애싱 프로세스 및 시스템 Ceased KR20080034001A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/195,854 2005-08-03
US11/195,854 US7279427B2 (en) 2005-08-03 2005-08-03 Damage-free ashing process and system for post low-k etch

Publications (1)

Publication Number Publication Date
KR20080034001A true KR20080034001A (ko) 2008-04-17

Family

ID=37718178

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087004579A Ceased KR20080034001A (ko) 2005-08-03 2006-05-24 로우-ｋ 에칭 이후의 무손상 애싱 프로세스 및 시스템

Country Status (6)

Country Link
US (1) US7279427B2 (https=)
JP (1) JP2009503889A (https=)
KR (1) KR20080034001A (https=)
CN (1) CN100595891C (https=)
TW (1) TWI336107B (https=)
WO (1) WO2007018678A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130102504A (ko) * 2012-03-07 2013-09-17 도쿄엘렉트론가부시키가이샤 저 유전상수 손상을 감소시키도록 노출된 저 유전상수 표면에 ＳｉＯＣｌ-함유 층을 형성하는 방법
KR20170089420A (ko) * 2016-01-26 2017-08-03 에이에스엠 아이피 홀딩 비.브이. 식각 정지층을 사용한 반도체 소자 제조
KR20180018621A (ko) * 2015-09-30 2018-02-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 처리 시스템 및 방법

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JP5100057B2 (ja) * 2006-08-18 2012-12-19 東京エレクトロン株式会社 半導体装置の製造方法
US7595005B2 (en) * 2006-12-11 2009-09-29 Tokyo Electron Limited Method and apparatus for ashing a substrate using carbon dioxide
US7637269B1 (en) * 2009-07-29 2009-12-29 Tokyo Electron Limited Low damage method for ashing a substrate using CO2/CO-based process
CN102142393B (zh) * 2010-01-28 2013-07-03 中芯国际集成电路制造(上海)有限公司 互连结构的形成方法
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8242460B2 (en) * 2010-03-29 2012-08-14 Tokyo Electron Limited Ultraviolet treatment apparatus
US8741775B2 (en) * 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
CN103187360B (zh) * 2011-12-30 2016-01-06 中芯国际集成电路制造(上海)有限公司 形成互连结构的方法
CN103545163B (zh) * 2012-07-10 2016-11-16 中芯国际集成电路制造(上海)有限公司 具有氟残留或氯残留的半导体结构的处理方法
US8802572B2 (en) * 2012-07-10 2014-08-12 Applied Materials, Inc. Method of patterning a low-k dielectric film
US9165783B2 (en) 2012-11-01 2015-10-20 Applied Materials, Inc. Method of patterning a low-k dielectric film
CN103871959B (zh) 2012-12-17 2017-11-03 中芯国际集成电路制造(上海)有限公司 互连结构及其制造方法
CN103871961B (zh) 2012-12-17 2017-08-25 中芯国际集成电路制造(上海)有限公司 互连结构及其制造方法
CN103871962B (zh) 2012-12-18 2017-12-29 中芯国际集成电路制造(上海)有限公司 互连结构及其制造方法
FR3000602B1 (fr) * 2012-12-28 2016-06-24 Commissariat A L Energie Atomique Et Aux Energies Alternatives Procede de gravure d'un materiau dielectrique poreux
US9190317B2 (en) 2013-01-10 2015-11-17 Semiconductor Manufacturing International (Shanghai) Corporation Interconnection structures and fabrication method thereof
US8987139B2 (en) 2013-01-29 2015-03-24 Applied Materials, Inc. Method of patterning a low-k dielectric film
US9385000B2 (en) 2014-01-24 2016-07-05 United Microelectronics Corp. Method of performing etching process
CN103943555B (zh) * 2014-04-28 2016-11-02 上海华力微电子有限公司 一种有源区制备方法
CN109742019B (zh) * 2019-01-21 2019-10-01 广东工业大学 一种利用紫外激光加工干法刻蚀中硬掩膜板的方法
JP7296093B2 (ja) * 2019-02-04 2023-06-22 国立大学法人東海国立大学機構 窒化炭素膜の製造方法および窒化炭素被覆体の製造方法
US20230268223A1 (en) * 2022-02-24 2023-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices and methods of manufacture

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3193265B2 (ja) * 1995-05-20 2001-07-30 東京エレクトロン株式会社 プラズマエッチング装置
JP2001077086A (ja) * 1999-08-31 2001-03-23 Oki Electric Ind Co Ltd 半導体装置のドライエッチング方法
US6967173B2 (en) * 2000-11-15 2005-11-22 Texas Instruments Incorporated Hydrogen plasma photoresist strip and polymeric residue cleanup processs for low dielectric constant materials
US6849559B2 (en) * 2002-04-16 2005-02-01 Tokyo Electron Limited Method for removing photoresist and etch residues
CN1226455C (zh) * 2002-07-19 2005-11-09 联华电子股份有限公司 预清除用氟化碳反应气体的蚀刻工艺后残留聚合物的方法
US7833957B2 (en) * 2002-08-22 2010-11-16 Daikin Industries, Ltd. Removing solution
JP2004158691A (ja) * 2002-11-07 2004-06-03 Yac Co Ltd レジスト除去方法
US7344991B2 (en) * 2002-12-23 2008-03-18 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
WO2004061919A1 (en) * 2002-12-23 2004-07-22 Tokyo Electron Limited Method and apparatus for bilayer photoresist dry development
US7309448B2 (en) * 2003-08-08 2007-12-18 Applied Materials, Inc. Selective etch process of a sacrificial light absorbing material (SLAM) over a dielectric material
US7176141B2 (en) * 2004-09-07 2007-02-13 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma treatment to improve barrier layer performance over porous low-K insulating dielectrics

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130102504A (ko) * 2012-03-07 2013-09-17 도쿄엘렉트론가부시키가이샤 저 유전상수 손상을 감소시키도록 노출된 저 유전상수 표면에 ＳｉＯＣｌ-함유 층을 형성하는 방법
KR20180018621A (ko) * 2015-09-30 2018-02-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 처리 시스템 및 방법
US10312075B2 (en) 2015-09-30 2019-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment system and method
US10529553B2 (en) 2015-09-30 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Treatment system and method
US10796898B2 (en) 2015-09-30 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment system and method
US11670500B2 (en) 2015-09-30 2023-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Treatment system and method
KR20170089420A (ko) * 2016-01-26 2017-08-03 에이에스엠 아이피 홀딩 비.브이. 식각 정지층을 사용한 반도체 소자 제조

Also Published As

Publication number Publication date
WO2007018678A2 (en) 2007-02-15
JP2009503889A (ja) 2009-01-29
TW200721300A (en) 2007-06-01
CN100595891C (zh) 2010-03-24
WO2007018678A3 (en) 2007-07-12
CN101238551A (zh) 2008-08-06
US7279427B2 (en) 2007-10-09
US20070032087A1 (en) 2007-02-08
TWI336107B (en) 2011-01-11

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