KR20080025690A - 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링 - Google Patents

폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링 Download PDF

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Publication number
KR20080025690A
KR20080025690A KR1020077029805A KR20077029805A KR20080025690A KR 20080025690 A KR20080025690 A KR 20080025690A KR 1020077029805 A KR1020077029805 A KR 1020077029805A KR 20077029805 A KR20077029805 A KR 20077029805A KR 20080025690 A KR20080025690 A KR 20080025690A
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South Korea
Prior art keywords
plasma
ring
plasma confinement
processing chamber
loss material
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020077029805A
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English (en)
Korean (ko)
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제임스 에이치 로저스
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램 리써치 코포레이션
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Publication of KR20080025690A publication Critical patent/KR20080025690A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Coating By Spraying Or Casting (AREA)
KR1020077029805A 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링 Ceased KR20080025690A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/155,493 2005-06-20
US11/155,493 US7713379B2 (en) 2005-06-20 2005-06-20 Plasma confinement rings including RF absorbing material for reducing polymer deposition

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137001853A Division KR101468340B1 (ko) 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는 플라즈마 한정링

Publications (1)

Publication Number Publication Date
KR20080025690A true KR20080025690A (ko) 2008-03-21

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Application Number Title Priority Date Filing Date
KR1020077029805A Ceased KR20080025690A (ko) 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링
KR1020137001853A Expired - Fee Related KR101468340B1 (ko) 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는 플라즈마 한정링

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137001853A Expired - Fee Related KR101468340B1 (ko) 2005-06-20 2006-06-14 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는 플라즈마 한정링

Country Status (7)

Country Link
US (3) US7713379B2 (https=)
JP (2) JP5492411B2 (https=)
KR (2) KR20080025690A (https=)
CN (1) CN101553900B (https=)
MY (1) MY164564A (https=)
TW (1) TWI416996B (https=)
WO (1) WO2007001865A2 (https=)

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KR20110039250A (ko) * 2008-07-07 2011-04-15 램 리써치 코포레이션 플라즈마 처리 챔버에 사용하기 위한 진공 갭을 포함하는 플라즈마 대향 프로브 장치
WO2011149615A3 (en) * 2010-05-24 2012-02-02 Applied Materials, Inc. Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus
KR20190101509A (ko) * 2009-08-31 2019-08-30 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들

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US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US8647484B2 (en) * 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
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US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
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US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
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SG169960A1 (en) 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
JP3160877U (ja) 2009-10-13 2010-07-15 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ シャワーヘッド電極アセンブリの端部クランプ留めおよび機械固定される内側電極
CN103081085A (zh) * 2010-08-06 2013-05-01 旭硝子株式会社 支撑基板
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CN102394255A (zh) * 2011-11-15 2012-03-28 苏州思博露光伏能源科技有限公司 在柔性薄膜光伏电池制造中喷淋电极同时沉积薄膜的技术
CN104508180A (zh) * 2012-07-27 2015-04-08 应用材料公司 粗糙化的基板支撑件
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US11127619B2 (en) * 2016-06-07 2021-09-21 Applied Materials, Inc. Workpiece carrier for high power with enhanced edge sealing
KR200491165Y1 (ko) 2017-04-14 2020-05-15 주식회사 월덱스 플라즈마 에칭장치용 이체형 한정 링
CN112713075B (zh) * 2019-10-25 2024-03-12 中微半导体设备(上海)股份有限公司 等离子体隔离环、等离子体处理装置与基片处理方法
CN112802729B (zh) * 2019-11-13 2024-05-10 中微半导体设备(上海)股份有限公司 带温度维持装置的隔离环
CN112928007B (zh) * 2019-12-06 2023-09-12 中微半导体设备(上海)股份有限公司 等离子体处理设备及用于等离子体处理设备的下电极组件
US12354895B2 (en) 2019-12-19 2025-07-08 Lam Research Corporation Encapsulated RFID in consumable chamber parts
CN113745081B (zh) * 2020-05-27 2024-03-12 中微半导体设备(上海)股份有限公司 一种隔离环组件、等离子体处理装置及处理方法
CN114649178A (zh) * 2020-12-18 2022-06-21 中微半导体设备(上海)股份有限公司 一种下电极组件及等离子体处理装置
KR102326741B1 (ko) * 2021-08-18 2021-11-16 주식회사 린텍 실리콘 파우더와 고주파 가열장치를 이용한 실리콘 부품의 접합 방법

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KR20110039250A (ko) * 2008-07-07 2011-04-15 램 리써치 코포레이션 플라즈마 처리 챔버에 사용하기 위한 진공 갭을 포함하는 플라즈마 대향 프로브 장치
KR20190101509A (ko) * 2009-08-31 2019-08-30 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR20190102098A (ko) * 2009-08-31 2019-09-02 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
US10720314B2 (en) 2009-08-31 2020-07-21 Lam Research Corporation Confinement ring for use in a plasma processing system
KR20200117074A (ko) * 2009-08-31 2020-10-13 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR20210006009A (ko) * 2009-08-31 2021-01-15 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR20210021151A (ko) * 2009-08-31 2021-02-24 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
KR20210034704A (ko) * 2009-08-31 2021-03-30 램 리써치 코포레이션 무선 주파수 (ｒｆ) 접지 복귀 장치들
WO2011149615A3 (en) * 2010-05-24 2012-02-02 Applied Materials, Inc. Hybrid hotwire chemical vapor deposition and plasma enhanced chemical vapor deposition method and apparatus

Also Published As

Publication number Publication date
WO2007001865A3 (en) 2009-06-18
JP5492411B2 (ja) 2014-05-14
MY164564A (en) 2018-01-15
WO2007001865A2 (en) 2007-01-04
TWI416996B (zh) 2013-11-21
TW200708207A (en) 2007-02-16
JP5220178B2 (ja) 2013-06-26
KR101468340B1 (ko) 2014-12-03
US20130095666A1 (en) 2013-04-18
CN101553900A (zh) 2009-10-07
US8337662B2 (en) 2012-12-25
CN101553900B (zh) 2011-08-17
JP2012099829A (ja) 2012-05-24
JP2009500812A (ja) 2009-01-08
US7713379B2 (en) 2010-05-11
US9123650B2 (en) 2015-09-01
US20100178774A1 (en) 2010-07-15
KR20130023372A (ko) 2013-03-07
US20060283552A1 (en) 2006-12-21

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