KR20070056944A - 광 조사식 가열 장치 - Google Patents
광 조사식 가열 장치 Download PDFInfo
- Publication number
- KR20070056944A KR20070056944A KR1020060109909A KR20060109909A KR20070056944A KR 20070056944 A KR20070056944 A KR 20070056944A KR 1020060109909 A KR1020060109909 A KR 1020060109909A KR 20060109909 A KR20060109909 A KR 20060109909A KR 20070056944 A KR20070056944 A KR 20070056944A
- Authority
- KR
- South Korea
- Prior art keywords
- filament
- wafer
- guard ring
- filament lamp
- lamps
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 76
- 238000000926 separation method Methods 0.000 claims description 61
- 238000009826 distribution Methods 0.000 abstract description 51
- 238000000034 method Methods 0.000 abstract description 14
- 230000008569 process Effects 0.000 abstract description 11
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 description 54
- 230000002093 peripheral effect Effects 0.000 description 47
- 238000001816 cooling Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
- 239000010453 quartz Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 238000007789 sealing Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000011888 foil Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 210000004185 liver Anatomy 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 240000006829 Ficus sundaica Species 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (6)
- 발광관의 관축을 따라 배치된 복수의 필라멘트에 개별적으로 전력이 공급되는 필라멘트 램프를 포함하는 복수개의 필라멘트 램프가 병렬로 배치되어 이루어지는 광원부와, 이 광원부에서 방사되는 광의 조사 위치에 피처리물이 배치된 광 조사식 가열 장치로서,상기 광원부는, 복수의 인접하는 필라멘트 램프간의 이간 거리가 불균일한 것을 특징으로 하는 광 조사식 가열 장치.
- 청구항 1에 있어서, 상기 광원부는, 중앙측의 필라멘트 램프군에 있어서 인접하는 필라멘트 램프간의 이간 거리가, 상기 중앙측의 필라멘트 램프군의 외측에 위치하는 단부측의 필라멘트 램프군에 있어서 인접하는 필라멘트 램프간의 이간 거리에 비해 큰 것을 특징으로 하는 광 조사식 가열 장치.
- 청구항 1 또는 2에 있어서, 상기 발광관의 관축을 따라 배치된 복수의 필라멘트에 개별적으로 전력이 공급되는 필라멘트 램프는, 상기 피처리물의 주변부에 대해서 설치된 필라멘트의 정격 전력 밀도가, 상기 피처리물의 중앙부에 대해서 설치된 필라멘트의 정격 전력 밀도에 비해 큰 것을 특징으로 하는 광 조사식 가열 장치.
- 청구항 1 또는 2에 있어서, 상기 광원부는, 상기 각 필라멘트 램프에서 방사되는 광을 상기 피처리물에 반사하는 반사경을 구비하고 있는 것을 특징으로 하는 광 조사식 가열 장치.
- 청구항 1 또는 2에 있어서, 인접하는 상기 필라멘트 램프간의 이간 거리를 D, 상기 필라멘트 램프와 상기 피처리물간의 거리를 H로 했을 때,D/H≤1의 관계식을 만족하는 것을 특징으로 하는 광 조사식 가열 장치.
- 청구항 1 또는 2에 있어서, 상기 피처리물의 주변에는, 가드 링이 설치되어 있는 것을 특징으로 하는 광 조사식 가열 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005346983A JP5013044B2 (ja) | 2005-11-30 | 2005-11-30 | 光照射式加熱装置 |
JPJP-P-2005-00346983 | 2005-11-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070056944A true KR20070056944A (ko) | 2007-06-04 |
KR101036404B1 KR101036404B1 (ko) | 2011-05-23 |
Family
ID=37845376
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060109909A KR101036404B1 (ko) | 2005-11-30 | 2006-11-08 | 광 조사식 가열 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7700899B2 (ko) |
EP (1) | EP1793413B2 (ko) |
JP (1) | JP5013044B2 (ko) |
KR (1) | KR101036404B1 (ko) |
DE (1) | DE602006004540D1 (ko) |
TW (1) | TW200721275A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160025650A (ko) * | 2014-08-27 | 2016-03-09 | 주식회사 제우스 | 기판 처리장치 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5282393B2 (ja) * | 2007-11-06 | 2013-09-04 | ウシオ電機株式会社 | 光照射式加熱処理装置 |
JP5282409B2 (ja) * | 2008-02-25 | 2013-09-04 | ウシオ電機株式会社 | 光照射式加熱方法及び光照射式加熱装置 |
DE102011080202A1 (de) * | 2011-08-01 | 2013-02-07 | Gebr. Schmid Gmbh | Vorrichtung und Verfahren zur Herstellung von dünnen Schichten |
DE102012106667B3 (de) * | 2012-07-23 | 2013-07-25 | Heraeus Noblelight Gmbh | Vorrichtung zur Bestrahlung eines Substrats |
WO2016126381A1 (en) * | 2015-02-05 | 2016-08-11 | Applied Materials, Inc. | Rapid thermal processing chamber with linear control lamps |
JP6622617B2 (ja) * | 2016-02-18 | 2019-12-18 | 株式会社Screenホールディングス | 熱処理装置 |
US11456274B1 (en) * | 2021-08-31 | 2022-09-27 | Yield Engineering Systems, Inc. | Method of using a processing oven |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6081819A (ja) * | 1983-10-11 | 1985-05-09 | Fujitsu Ltd | 赤外線熱処理装置 |
US4789771A (en) † | 1985-10-07 | 1988-12-06 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
DE3938437A1 (de) † | 1989-11-20 | 1991-05-23 | Heraeus Quarzglas | Infrarot-strahler |
JPH0448724A (ja) * | 1990-06-15 | 1992-02-18 | Hitachi Ltd | 半導体熱処理装置 |
JP3103896B2 (ja) * | 1991-03-15 | 2000-10-30 | ソニー株式会社 | ハロゲンランプ及び熱処理炉 |
JPH04329253A (ja) | 1991-04-30 | 1992-11-18 | Toshiba Lighting & Technol Corp | 管形白熱電球 |
DE69207965T2 (de) * | 1991-07-08 | 1996-08-22 | Philips Electronics Nv | Elektrisches Gerät zur Nahrungsmittelbereitung und elektrische Lampe zur Verwendung in diesem Gerät |
JPH05106050A (ja) * | 1991-10-17 | 1993-04-27 | Toshiba Mach Co Ltd | 走行薄平板の均等加熱装置 |
JPH0716353U (ja) | 1993-08-31 | 1995-03-17 | ウシオ電機株式会社 | 管型ランプ |
GB9611800D0 (en) † | 1996-06-06 | 1996-08-07 | Univ Bristol | Post-reception focusing in remote detection systems |
US5951896A (en) † | 1996-12-04 | 1999-09-14 | Micro C Technologies, Inc. | Rapid thermal processing heater technology and method of use |
JPH11176389A (ja) * | 1997-12-12 | 1999-07-02 | Ushio Inc | ウエハ加熱用フィラメントランプおよび加熱用光源 |
JP3296300B2 (ja) * | 1998-08-07 | 2002-06-24 | ウシオ電機株式会社 | 光照射式加熱装置 |
JP3988338B2 (ja) * | 1999-10-07 | 2007-10-10 | ウシオ電機株式会社 | 光照射式急速加熱処理装置の制御装置 |
DE10024709B4 (de) * | 2000-05-18 | 2008-03-13 | Steag Rtp Systems Gmbh | Vorrichtung zum thermischen Behandeln von Substraten |
TW540121B (en) * | 2000-10-10 | 2003-07-01 | Ushio Electric Inc | Heat treatment device and process with light irradiation |
DE10051125A1 (de) * | 2000-10-16 | 2002-05-02 | Steag Rtp Systems Gmbh | Vorrichtung zum thermischen Behandeln von Substraten |
JP4948701B2 (ja) * | 2000-12-28 | 2012-06-06 | 東京エレクトロン株式会社 | 加熱装置、当該加熱装置を有する熱処理装置、及び、熱処理制御方法 |
JP2003031517A (ja) | 2001-07-19 | 2003-01-31 | Dainippon Screen Mfg Co Ltd | 基板の熱処理装置 |
-
2005
- 2005-11-30 JP JP2005346983A patent/JP5013044B2/ja not_active Expired - Fee Related
-
2006
- 2006-10-03 TW TW095136750A patent/TW200721275A/zh not_active IP Right Cessation
- 2006-11-08 KR KR1020060109909A patent/KR101036404B1/ko active IP Right Grant
- 2006-11-27 DE DE602006004540T patent/DE602006004540D1/de active Active
- 2006-11-27 EP EP06024529.7A patent/EP1793413B2/en not_active Expired - Fee Related
- 2006-11-30 US US11/565,112 patent/US7700899B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160025650A (ko) * | 2014-08-27 | 2016-03-09 | 주식회사 제우스 | 기판 처리장치 |
Also Published As
Publication number | Publication date |
---|---|
EP1793413B1 (en) | 2008-12-31 |
JP2007157780A (ja) | 2007-06-21 |
US7700899B2 (en) | 2010-04-20 |
TWI372420B (ko) | 2012-09-11 |
US20070120227A1 (en) | 2007-05-31 |
DE602006004540D1 (de) | 2009-02-12 |
EP1793413A1 (en) | 2007-06-06 |
KR101036404B1 (ko) | 2011-05-23 |
EP1793413B2 (en) | 2019-05-08 |
JP5013044B2 (ja) | 2012-08-29 |
TW200721275A (en) | 2007-06-01 |
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