KR20070048180A - 결정성 규소 잉곳의 제조방법 - Google Patents

결정성 규소 잉곳의 제조방법 Download PDF

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Publication number
KR20070048180A
KR20070048180A KR1020077002420A KR20077002420A KR20070048180A KR 20070048180 A KR20070048180 A KR 20070048180A KR 1020077002420 A KR1020077002420 A KR 1020077002420A KR 20077002420 A KR20077002420 A KR 20077002420A KR 20070048180 A KR20070048180 A KR 20070048180A
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KR
South Korea
Prior art keywords
polysilicon
mold
crystalline silicon
granules
cooling
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Ceased
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KR1020077002420A
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English (en)
Korean (ko)
Inventor
마이클 브이. 스팽글러
칼 디. 시번
Original Assignee
알이씨 실리콘 인코포레이티드
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Application filed by 알이씨 실리콘 인코포레이티드 filed Critical 알이씨 실리콘 인코포레이티드
Publication of KR20070048180A publication Critical patent/KR20070048180A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B21/00—Unidirectional solidification of eutectic materials
    • C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
KR1020077002420A 2004-06-30 2005-06-30 결정성 규소 잉곳의 제조방법 Ceased KR20070048180A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/883,644 US7141114B2 (en) 2004-06-30 2004-06-30 Process for producing a crystalline silicon ingot
US10/883,644 2004-06-30

Publications (1)

Publication Number Publication Date
KR20070048180A true KR20070048180A (ko) 2007-05-08

Family

ID=35512611

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077002420A Ceased KR20070048180A (ko) 2004-06-30 2005-06-30 결정성 규소 잉곳의 제조방법

Country Status (6)

Country Link
US (1) US7141114B2 (https=)
EP (1) EP1766107A4 (https=)
JP (1) JP2008505046A (https=)
KR (1) KR20070048180A (https=)
NO (1) NO20070415L (https=)
WO (1) WO2006005018A2 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006017622B4 (de) * 2006-04-12 2008-03-27 Schott Ag Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium
JP2010504269A (ja) * 2006-09-22 2010-02-12 ユミコア ソシエテ アノニム 液体ＺｎでのＳｉＨＣｌ３の還元によるＳｉの製造方法
JP2008156166A (ja) * 2006-12-25 2008-07-10 Sumco Solar Corp シリコンインゴットの鋳造方法および切断方法
US20080257254A1 (en) * 2007-04-17 2008-10-23 Dieter Linke Large grain, multi-crystalline semiconductor ingot formation method and system
JP5309539B2 (ja) * 2007-07-12 2013-10-09 住友化学株式会社 精製シリコンの製造方法
JP5125973B2 (ja) * 2007-10-17 2013-01-23 住友化学株式会社 精製シリコンの製造方法
US20090191336A1 (en) * 2008-01-30 2009-07-30 Mohan Chandra Method and apparatus for simpified startup of chemical vapor deposition of polysilicon
TW200949027A (en) * 2008-03-19 2009-12-01 Gt Solar Inc System and method for arranging heating element in crystal growth apparatus
US20090280050A1 (en) * 2008-04-25 2009-11-12 Applied Materials, Inc. Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots
US20090289390A1 (en) * 2008-05-23 2009-11-26 Rec Silicon, Inc. Direct silicon or reactive metal casting
US20100047148A1 (en) * 2008-05-23 2010-02-25 Rec Silicon, Inc. Skull reactor
WO2010080918A2 (en) 2009-01-07 2010-07-15 Rec Silicon Inc Solidification of molten material over moving bed of divided solid material
US8168123B2 (en) * 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
TWI454309B (zh) * 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
US8425855B2 (en) 2009-04-20 2013-04-23 Robert Froehlich Reactor with silicide-coated metal surfaces
US8547121B2 (en) * 2009-04-29 2013-10-01 Silicor Materials Inc. Quality control process for UMG-SI feedstock
JP5511945B2 (ja) * 2009-04-29 2014-06-04 シリコー マテリアルズ インコーポレイテッド Ｕｍｇ−ｓｉ材料精製のためのプロセス管理
DE102010018287A1 (de) * 2010-04-26 2011-10-27 Crusible Gmbh Verfahren und Vorrichtung zum Beladen eines Schmelztiegels mit Silizium
DE102010029741B4 (de) * 2010-06-07 2013-02-28 Solarworld Innovations Gmbh Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle
JP5777336B2 (ja) * 2010-12-28 2015-09-09 ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ 多結晶シリコン原料のリチャージ方法
CN102021650B (zh) * 2010-12-31 2012-06-06 常州天合光能有限公司 一种大型多晶锭的生产方法
US20120260845A1 (en) * 2011-04-14 2012-10-18 Rec Silicon Inc Polysilicon system
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
CN102296354B (zh) * 2011-09-19 2013-12-11 江西旭阳雷迪高科技股份有限公司 一种硅料的铸锭方法
GB2494893A (en) * 2011-09-21 2013-03-27 Rec Wafer Pte Ltd Loading silicon in a crucible
DE102012200994A1 (de) * 2012-01-24 2013-07-25 Wacker Chemie Ag Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
WO2014037965A1 (en) * 2012-09-05 2014-03-13 MEMC ELECTRONIC METERIALS S.p.A. Method of loading a charge of polysilicon into a crucible
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
TWI640327B (zh) * 2013-11-14 2018-11-11 美商奧崔基尼克斯製藥公司 三酸甘油酯之固體組合物及其用途
WO2017040420A1 (en) * 2015-08-28 2017-03-09 C.B. Fleet Company, Incorporated Hemorrhoid preparation and sheets
CN106933119B (zh) * 2015-12-30 2021-05-11 巴彦淖尔聚光硅业有限公司 多晶硅还原炉调功柜控制系统
CN117103478B (zh) * 2023-08-24 2025-12-30 西安奕斯伟材料科技股份有限公司 一种用于对不合格晶棒节段进行破碎的系统及方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4249988A (en) * 1978-03-15 1981-02-10 Western Electric Company, Inc. Growing crystals from a melt by controlling additions of material thereto
US5116456A (en) 1988-04-18 1992-05-26 Solon Technologies, Inc. Apparatus and method for growth of large single crystals in plate/slab form
JPH05139886A (ja) * 1991-11-21 1993-06-08 Toshiba Corp 砒素化合物単結晶の製造方法
JPH05254817A (ja) * 1992-03-12 1993-10-05 Kawasaki Steel Corp 多結晶シリコン鋳塊の製造方法
US5810934A (en) * 1995-06-07 1998-09-22 Advanced Silicon Materials, Inc. Silicon deposition reactor apparatus
US5588993A (en) * 1995-07-25 1996-12-31 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US5814148A (en) * 1996-02-01 1998-09-29 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
JP3892496B2 (ja) * 1996-04-22 2007-03-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造方法
US5961944A (en) * 1996-10-14 1999-10-05 Kawasaki Steel Corporation Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
JP3189764B2 (ja) * 1997-09-29 2001-07-16 住友金属工業株式会社 シリコン単結晶原料の溶解方法
US5919303A (en) * 1997-10-16 1999-07-06 Memc Electronic Materials, Inc. Process for preparing a silicon melt from a polysilicon charge
US6039801A (en) * 1998-10-07 2000-03-21 Memc Electronic Materials, Inc. Continuous oxidation process for crystal pulling apparatus
US6284040B1 (en) * 1999-01-13 2001-09-04 Memc Electronic Materials, Inc. Process of stacking and melting polycrystalline silicon for high quality single crystal production
JP2002170780A (ja) * 2000-12-01 2002-06-14 Sharp Corp ルツボおよびそれを使用した多結晶シリコンの成長方法
JP4258973B2 (ja) * 2000-12-26 2009-04-30 三菱マテリアル株式会社 結晶シリコン製造装置
JP4747267B2 (ja) * 2001-09-28 2011-08-17 三菱マテリアル株式会社 衝撃緩和型多結晶シリコン
JP2003104711A (ja) * 2001-09-28 2003-04-09 Mitsubishi Materials Polycrystalline Silicon Corp ルツボ型多結晶シリコン
US6875269B2 (en) * 2001-11-13 2005-04-05 Advanced Silicon Materials Llc System for increasing charge size for single crystal silicon production
US20030101924A1 (en) * 2001-11-15 2003-06-05 Memc Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
US6605149B2 (en) * 2002-01-11 2003-08-12 Hemlock Semiconductor Corporation Method of stacking polycrystalline silicon in process for single crystal production
JP4077712B2 (ja) * 2002-10-29 2008-04-23 京セラ株式会社 シリコンの鋳造方法

Also Published As

Publication number Publication date
JP2008505046A (ja) 2008-02-21
EP1766107A2 (en) 2007-03-28
EP1766107A4 (en) 2009-11-11
WO2006005018A3 (en) 2006-12-21
NO20070415L (no) 2007-03-29
US20060000409A1 (en) 2006-01-05
WO2006005018A2 (en) 2006-01-12
US7141114B2 (en) 2006-11-28

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