KR20070030200A - 광활성 화합물 - Google Patents

광활성 화합물 Download PDF

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Publication number
KR20070030200A
KR20070030200A KR1020067024474A KR20067024474A KR20070030200A KR 20070030200 A KR20070030200 A KR 20070030200A KR 1020067024474 A KR1020067024474 A KR 1020067024474A KR 20067024474 A KR20067024474 A KR 20067024474A KR 20070030200 A KR20070030200 A KR 20070030200A
Authority
KR
South Korea
Prior art keywords
methacrylate
adamantyl
poly
hydroxy
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020067024474A
Other languages
English (en)
Korean (ko)
Inventor
엠 달릴 라만
우규 김
무니라트나 파드마나반
상호 이
Original Assignee
에이제트 일렉트로닉 머트리얼즈 유에스에이 코프.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. filed Critical 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프.
Publication of KR20070030200A publication Critical patent/KR20070030200A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12Sulfonium compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/005Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein
    • G03C1/492Photosoluble emulsions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020067024474A 2004-06-08 2005-06-08 광활성 화합물 Withdrawn KR20070030200A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/863,042 2004-06-08
US10/863,042 US20050271974A1 (en) 2004-06-08 2004-06-08 Photoactive compounds

Publications (1)

Publication Number Publication Date
KR20070030200A true KR20070030200A (ko) 2007-03-15

Family

ID=35044987

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067024474A Withdrawn KR20070030200A (ko) 2004-06-08 2005-06-08 광활성 화합물

Country Status (7)

Country Link
US (1) US20050271974A1 (https=)
EP (1) EP1766474A2 (https=)
JP (1) JP2008501779A (https=)
KR (1) KR20070030200A (https=)
CN (1) CN1961260A (https=)
TW (1) TW200613256A (https=)
WO (1) WO2005121894A2 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
JP4695941B2 (ja) * 2005-08-19 2011-06-08 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
JP4881692B2 (ja) * 2006-10-23 2012-02-22 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
US20080171270A1 (en) * 2007-01-16 2008-07-17 Munirathna Padmanaban Polymers Useful in Photoresist Compositions and Compositions Thereof
JP5364256B2 (ja) * 2007-06-13 2013-12-11 東京応化工業株式会社 化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法
US8227624B2 (en) * 2007-08-07 2012-07-24 Adeka Corporation Aromatic sulfonium salt compound
US8252503B2 (en) * 2007-08-24 2012-08-28 Az Electronic Materials Usa Corp. Photoresist compositions
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8455176B2 (en) 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8632948B2 (en) 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US20110086312A1 (en) * 2009-10-09 2011-04-14 Dammel Ralph R Positive-Working Photoimageable Bottom Antireflective Coating
US8906594B2 (en) 2012-06-15 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working thick film photoresist
US9012126B2 (en) 2012-06-15 2015-04-21 Az Electronic Materials (Luxembourg) S.A.R.L. Positive photosensitive material
TWI498675B (zh) * 2012-09-15 2015-09-01 羅門哈斯電子材料有限公司 酸產生劑化合物及含該化合物之光阻劑
KR20160003628A (ko) 2013-04-23 2016-01-11 미츠비시 가스 가가쿠 가부시키가이샤 신규 지환식 에스테르 화합물, (메트)아크릴 공중합체 및 그것을 포함하는 감광성 수지 조성물
JP6442271B2 (ja) * 2014-12-22 2018-12-19 デクセリアルズ株式会社 化合物、熱硬化性樹脂組成物、及び熱硬化性シート
TWI731961B (zh) 2016-04-19 2021-07-01 德商馬克專利公司 正向感光材料及形成正向凸紋影像之方法
JP6782569B2 (ja) * 2016-06-28 2020-11-11 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
KR102261808B1 (ko) 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
EP3847506A1 (en) 2018-09-05 2021-07-14 Merck Patent GmbH Positive working photosensitive material

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5021197A (en) * 1988-06-16 1991-06-04 Mitsubishi Gas Chemical Company, Inc. Process for production of sulfonium compounds
DE3902114A1 (de) * 1989-01-25 1990-08-02 Basf Ag Strahlungsempfindliche, ethylenisch ungesaettigte, copolymerisierbare sulfoniumsalze und verfahren zu deren herstellung
US5075476A (en) * 1989-06-07 1991-12-24 Mitsubishi Gas Chemical Company, Inc. Process for production of sulfonium compounds and novel methylthiphenol derivatives
US5252436A (en) * 1989-12-15 1993-10-12 Basf Aktiengesellschaft Process for developing a positive-working photoresist containing poly(p-hydroxystyrene) and sulfonium salt with an aqueous developer containing basic organic compounds
US5274148A (en) * 1992-08-10 1993-12-28 Isp Investments, Inc. Dialky alkoxy phenyl sulfonium salt cationic initiators
WO1995024387A1 (en) * 1994-03-09 1995-09-14 Nippon Soda Co., Ltd. Sulfonium salt compound and polymerization initiator
JP2770740B2 (ja) * 1994-07-14 1998-07-02 日本電気株式会社 橋かけ環式アルキル基を有するスルホニウム塩化合物および光酸発生剤
EP0846681B1 (en) * 1995-08-22 2003-12-03 Nippon Soda Co., Ltd. Novel sulfonium salt compounds, polymerization initiator, curable composition, and curing method
JP3587325B2 (ja) * 1996-03-08 2004-11-10 富士写真フイルム株式会社 ポジ型感光性組成物
US5693903A (en) * 1996-04-04 1997-12-02 Coda Music Technology, Inc. Apparatus and method for analyzing vocal audio data to provide accompaniment to a vocalist
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
JP4226803B2 (ja) * 2000-08-08 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
JP4150509B2 (ja) * 2000-11-20 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US6855476B2 (en) * 2001-04-05 2005-02-15 Arch Specialty Chemicals, Inc. Photoacid generators for use in photoresist compositions
JP4054978B2 (ja) * 2001-08-24 2008-03-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
US7105267B2 (en) * 2001-08-24 2006-09-12 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP2003228167A (ja) * 2002-02-01 2003-08-15 Fuji Photo Film Co Ltd ネガ型レジスト組成物
JP3841399B2 (ja) * 2002-02-21 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
TWI284779B (en) * 2002-06-07 2007-08-01 Fujifilm Corp Photosensitive resin composition
US20030235775A1 (en) * 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
US6841333B2 (en) * 2002-11-01 2005-01-11 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
US7358408B2 (en) * 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds

Also Published As

Publication number Publication date
WO2005121894A3 (en) 2006-03-30
JP2008501779A (ja) 2008-01-24
CN1961260A (zh) 2007-05-09
US20050271974A1 (en) 2005-12-08
WO2005121894A2 (en) 2005-12-22
TW200613256A (en) 2006-05-01
EP1766474A2 (en) 2007-03-28

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Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20061122

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid