KR20070006852A - 인-시츄 도핑된 에피택셜 막 - Google Patents

인-시츄 도핑된 에피택셜 막 Download PDF

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Publication number
KR20070006852A
KR20070006852A KR1020067021741A KR20067021741A KR20070006852A KR 20070006852 A KR20070006852 A KR 20070006852A KR 1020067021741 A KR1020067021741 A KR 1020067021741A KR 20067021741 A KR20067021741 A KR 20067021741A KR 20070006852 A KR20070006852 A KR 20070006852A
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South Korea
Prior art keywords
deposition
dopant
flow
dichlorosilane
silicon
Prior art date
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Withdrawn
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KR1020067021741A
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English (en)
Korean (ko)
Inventor
마티아스 바우어
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에이에스엠 아메리카, 인코포레이티드
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Publication of KR20070006852A publication Critical patent/KR20070006852A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020067021741A 2004-04-23 2005-04-21 인-시츄 도핑된 에피택셜 막 Withdrawn KR20070006852A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US56503304P 2004-04-23 2004-04-23
US60/565,033 2004-04-23
US56590904P 2004-04-27 2004-04-27
US60/565,909 2004-04-27

Publications (1)

Publication Number Publication Date
KR20070006852A true KR20070006852A (ko) 2007-01-11

Family

ID=35451488

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067021741A Withdrawn KR20070006852A (ko) 2004-04-23 2005-04-21 인-시츄 도핑된 에피택셜 막

Country Status (5)

Country Link
US (1) US20050250298A1 (https=)
EP (1) EP1738001A2 (https=)
JP (1) JP2007535147A (https=)
KR (1) KR20070006852A (https=)
WO (1) WO2005116304A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080138939A1 (en) * 2006-12-12 2008-06-12 Yihwan Kim Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
WO2009079485A1 (en) * 2007-12-17 2009-06-25 Applied Materials, Inc. Phosphorus containing si epitaxial layers in n-type source/drain junctions

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AU2002306436A1 (en) 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
WO2004081982A2 (en) 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
JP2007157866A (ja) * 2005-12-02 2007-06-21 Sony Corp 成膜方法および半導体装置の製造方法
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積
JP4847152B2 (ja) * 2006-02-22 2011-12-28 富士通セミコンダクター株式会社 半導体装置とその製造方法
US20070212833A1 (en) * 2006-03-13 2007-09-13 Macronix International Co., Ltd. Methods for making a nonvolatile memory device comprising a shunt silicon layer
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
KR100831676B1 (ko) * 2006-06-30 2008-05-22 주식회사 하이닉스반도체 반도체 디바이스의 소자 분리막 제조방법
JP2008016523A (ja) 2006-07-04 2008-01-24 Sony Corp 半導体装置およびその製造方法
US7745653B2 (en) * 2007-03-08 2010-06-29 3M Innovative Properties Company Fluorochemical compounds having pendent silyl groups
US7335786B1 (en) 2007-03-29 2008-02-26 3M Innovative Properties Company Michael-adduct fluorochemical silanes
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
JP2012119612A (ja) 2010-12-03 2012-06-21 Toshiba Corp 不純物濃度プロファイルの測定方法、その方法に用いられるウェーハ、および、その方法を用いる半導体装置の製造方法
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9853129B2 (en) 2016-05-11 2017-12-26 Applied Materials, Inc. Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth

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US5068203A (en) * 1990-09-04 1991-11-26 Delco Electronics Corporation Method for forming thin silicon membrane or beam
US5124278A (en) * 1990-09-21 1992-06-23 Air Products And Chemicals, Inc. Amino replacements for arsine, antimony and phosphine
US5225032A (en) * 1991-08-09 1993-07-06 Allied-Signal Inc. Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
JPH05343350A (ja) * 1992-06-08 1993-12-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080138939A1 (en) * 2006-12-12 2008-06-12 Yihwan Kim Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
US7960236B2 (en) 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US8394196B2 (en) 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
WO2009079485A1 (en) * 2007-12-17 2009-06-25 Applied Materials, Inc. Phosphorus containing si epitaxial layers in n-type source/drain junctions

Also Published As

Publication number Publication date
WO2005116304A3 (en) 2007-01-25
JP2007535147A (ja) 2007-11-29
EP1738001A2 (en) 2007-01-03
WO2005116304A2 (en) 2005-12-08
US20050250298A1 (en) 2005-11-10

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