JP2007535147A - インサイチュドープトエピタキシャルフィルム - Google Patents

インサイチュドープトエピタキシャルフィルム Download PDF

Info

Publication number
JP2007535147A
JP2007535147A JP2007509644A JP2007509644A JP2007535147A JP 2007535147 A JP2007535147 A JP 2007535147A JP 2007509644 A JP2007509644 A JP 2007509644A JP 2007509644 A JP2007509644 A JP 2007509644A JP 2007535147 A JP2007535147 A JP 2007535147A
Authority
JP
Japan
Prior art keywords
deposition
dopant
flow
dichlorosilane
hydride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2007509644A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007535147A5 (https=
Inventor
マティアス バウアー
Original Assignee
エーエスエム アメリカ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーエスエム アメリカ インコーポレイテッド filed Critical エーエスエム アメリカ インコーポレイテッド
Publication of JP2007535147A publication Critical patent/JP2007535147A/ja
Publication of JP2007535147A5 publication Critical patent/JP2007535147A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2007509644A 2004-04-23 2005-04-21 インサイチュドープトエピタキシャルフィルム Withdrawn JP2007535147A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US56503304P 2004-04-23 2004-04-23
US56590904P 2004-04-27 2004-04-27
PCT/US2005/013674 WO2005116304A2 (en) 2004-04-23 2005-04-21 In situ doped epitaxial films

Publications (2)

Publication Number Publication Date
JP2007535147A true JP2007535147A (ja) 2007-11-29
JP2007535147A5 JP2007535147A5 (https=) 2008-06-19

Family

ID=35451488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007509644A Withdrawn JP2007535147A (ja) 2004-04-23 2005-04-21 インサイチュドープトエピタキシャルフィルム

Country Status (5)

Country Link
US (1) US20050250298A1 (https=)
EP (1) EP1738001A2 (https=)
JP (1) JP2007535147A (https=)
KR (1) KR20070006852A (https=)
WO (1) WO2005116304A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007227565A (ja) * 2006-02-22 2007-09-06 Fujitsu Ltd 半導体装置とその製造方法
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002306436A1 (en) 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US6830976B2 (en) 2001-03-02 2004-12-14 Amberwave Systems Corproation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6703688B1 (en) 2001-03-02 2004-03-09 Amberwave Systems Corporation Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
AU2003247513A1 (en) 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US6982474B2 (en) 2002-06-25 2006-01-03 Amberwave Systems Corporation Reacted conductive gate electrodes
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
WO2004081982A2 (en) 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
JP2007157866A (ja) * 2005-12-02 2007-06-21 Sony Corp 成膜方法および半導体装置の製造方法
US20070212833A1 (en) * 2006-03-13 2007-09-13 Macronix International Co., Ltd. Methods for making a nonvolatile memory device comprising a shunt silicon layer
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
KR100831676B1 (ko) * 2006-06-30 2008-05-22 주식회사 하이닉스반도체 반도체 디바이스의 소자 분리막 제조방법
JP2008016523A (ja) 2006-07-04 2008-01-24 Sony Corp 半導体装置およびその製造方法
US7960236B2 (en) * 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US8394196B2 (en) * 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
US7745653B2 (en) * 2007-03-08 2010-06-29 3M Innovative Properties Company Fluorochemical compounds having pendent silyl groups
US7335786B1 (en) 2007-03-29 2008-02-26 3M Innovative Properties Company Michael-adduct fluorochemical silanes
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7655543B2 (en) 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
JP2012119612A (ja) 2010-12-03 2012-06-21 Toshiba Corp 不純物濃度プロファイルの測定方法、その方法に用いられるウェーハ、および、その方法を用いる半導体装置の製造方法
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9853129B2 (en) 2016-05-11 2017-12-26 Applied Materials, Inc. Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068203A (en) * 1990-09-04 1991-11-26 Delco Electronics Corporation Method for forming thin silicon membrane or beam
US5124278A (en) * 1990-09-21 1992-06-23 Air Products And Chemicals, Inc. Amino replacements for arsine, antimony and phosphine
US5225032A (en) * 1991-08-09 1993-07-06 Allied-Signal Inc. Method of producing stoichiometric, epitaxial, monocrystalline films of silicon carbide at temperatures below 900 degrees centigrade
JPH05343350A (ja) * 1992-06-08 1993-12-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
US6153920A (en) * 1994-12-01 2000-11-28 Lucent Technologies Inc. Process for controlling dopant diffusion in a semiconductor layer and semiconductor device formed thereby
DE19520175A1 (de) * 1995-06-01 1996-12-12 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe
FR2779573B1 (fr) * 1998-06-05 2001-10-26 St Microelectronics Sa Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication
US6313017B1 (en) * 1999-01-26 2001-11-06 University Of Vermont And State Agricultural College Plasma enhanced CVD process for rapidly growing semiconductor films
KR100510996B1 (ko) * 1999-12-30 2005-08-31 주식회사 하이닉스반도체 선택적 에피텍셜 성장 공정의 최적화 방법
TW512529B (en) * 2000-06-14 2002-12-01 Infineon Technologies Ag Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistor
US20020127766A1 (en) * 2000-12-27 2002-09-12 Memc Electronic Materials, Inc. Semiconductor wafer manufacturing process
US6713813B2 (en) * 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
AU2002306436A1 (en) * 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
JP2003068654A (ja) * 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
JP4060580B2 (ja) * 2001-11-29 2008-03-12 株式会社ルネサステクノロジ ヘテロ接合バイポーラトランジスタ
US6605498B1 (en) * 2002-03-29 2003-08-12 Intel Corporation Semiconductor transistor having a backfilled channel material
US7074623B2 (en) * 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
AU2003247513A1 (en) * 2002-06-10 2003-12-22 Amberwave Systems Corporation Growing source and drain elements by selecive epitaxy
US7045845B2 (en) * 2002-08-16 2006-05-16 Semiconductor Components Industries, L.L.C. Self-aligned vertical gate semiconductor device
US7540920B2 (en) * 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7238595B2 (en) * 2003-03-13 2007-07-03 Asm America, Inc. Epitaxial semiconductor deposition methods and structures
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7332439B2 (en) * 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
US7195985B2 (en) * 2005-01-04 2007-03-27 Intel Corporation CMOS transistor junction regions formed by a CVD etching and deposition sequence

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積
JP2007227565A (ja) * 2006-02-22 2007-09-06 Fujitsu Ltd 半導体装置とその製造方法

Also Published As

Publication number Publication date
WO2005116304A3 (en) 2007-01-25
KR20070006852A (ko) 2007-01-11
EP1738001A2 (en) 2007-01-03
WO2005116304A2 (en) 2005-12-08
US20050250298A1 (en) 2005-11-10

Similar Documents

Publication Publication Date Title
JP2007535147A (ja) インサイチュドープトエピタキシャルフィルム
JP5173140B2 (ja) 電気的に活性なドープト結晶性Ｓｉ含有膜の堆積方法
US7521365B2 (en) Selective epitaxy process with alternating gas supply
JP5145049B2 (ja) Ｃｖｄエッチングおよび堆積シーケンスにより形成されるｃｍｏｓトランジスタ接合領域
US7598178B2 (en) Carbon precursors for use during silicon epitaxial film formation
US7682940B2 (en) Use of Cl2 and/or HCl during silicon epitaxial film formation
KR101521878B1 (ko) 반도체 박막의 선택적 에피택셜 형성
US7776698B2 (en) Selective formation of silicon carbon epitaxial layer
US8685845B2 (en) Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
US20060166414A1 (en) Selective deposition
JP5336070B2 (ja) 選択エピタキシャル成長プロセスの改良方法
US20180166288A1 (en) Methods for silicide formation
JP2007157866A (ja) 成膜方法および半導体装置の製造方法
JP2007288019A (ja) 成膜方法および半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080421

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080421

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20090703

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090703

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20091208

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20091208

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20100118