KR20060045446A - System for heat treatment of semiconductor device - Google Patents

Abstract

The present invention relates to a heat treatment system of a semiconductor device, and more particularly, is formed on the surface of a glass substrate used in a flat panel display panel such as an LCD or an OLED by simultaneously using a heating by a lamp heater and an induction heating by an induction electromotive force. A heat treatment system of a semiconductor device capable of preventing deformation of a semiconductor device while rapidly performing a heat treatment process of a semiconductor device including a crystallization of an amorphous silicon thin film or a dopant activation process of a polysilicon thin film at a higher temperature.

Amorphous Silicon Film, Crystallization, Dopant Activation, Lamp Heating, Induction Heating

Description

System for Heat Treatment of Semiconductor device

1 is a block diagram of a heat treatment system of a semiconductor device according to an embodiment of the present invention.

2 is a front view of a charging unit forming a heat treatment system of a semiconductor element.

3 is a plan view of the susceptor constituting the charging unit;

4A is a sectional perspective view of a heating furnace constituting a heating unit.

4B is a cross-sectional perspective view of a portion where the heating furnaces of FIG. 4A are connected to each other.

5 is an external perspective view of a process unit according to an embodiment of the present invention.

6 is a perspective view of a portion including an inner housing of the process unit and a lamp heater and a roller according to an embodiment of the present invention.

7 is a cross-sectional view of the process unit according to the embodiment of the present invention.

8 is a perspective view of a magnetic core and an induction coil according to an embodiment of the present invention.

Figure 9 is a schematic cross-sectional view showing the induction heating portion of the magnetic core and the induction coil according to an embodiment of the present invention.

10 is a cross-sectional view of a processing unit according to another embodiment of the present invention.

Figure 11 is a schematic cross-sectional view showing the induction heating portion of the magnetic core and the induction coil according to another embodiment of the present invention.

12A is a front view of a discharge part constituting a heat treatment system of a semiconductor element.

12B is a side view of FIG. 12A.

13A is a plan view of the cooling susceptor constituting the discharge portion.

Fig. 13B is a sectional view taken along the line A-A in Fig. 13A.

14 is a graph showing process conditions of heat treatment performed in the heat treatment system of the semiconductor device according to the embodiment of the present invention.

FIG. 15 is a graph of a change in slope of a UV curve showing a degree of crystallization of an amorphous silicon thin film according to a current of an induction coil. FIG.

16A to 16D are graphs showing changes in Raman spectra of crystalline silicon thin films when applied currents of induction coils are 0A, 20A, 30A, and 40A, respectively.

17 is a diagram showing the crystal MILC growth distance according to the current of the induction coil after the MILC crystallization process.

18 is a graph showing the change of the sheet resistance and the UV curve slope according to the heating temperature of the process unit and the amount of power of the halogen lamp.

19 is a graph showing the temperature change with time at each position of the glass substrate.

<Description of Symbols for Major Parts of Drawings>

10-semiconductor device 20-support plate

100-charging 200-heating

300-Process part 310-External housing

315-Internal housing 320-Lamp heater

330-First Black Body 335-Second Black Body

340-Magnetic core 350-Induction coil

360-Heat Insulation Board 370-Rollers

400-cooling section 500-outlet section

The present invention relates to a heat treatment system of a semiconductor device, and more particularly, is formed on the surface of a glass substrate used in a flat panel display panel such as an LCD or an OLED by simultaneously using a heating by a lamp heater and an induction heating by an induction electromotive force. A heat treatment system of a semiconductor device capable of preventing deformation of a semiconductor device while rapidly performing a heat treatment process of a semiconductor device including a crystallization of an amorphous silicon thin film or a dopant activation process of a polysilicon thin film at a higher temperature.

Among the flat panel display devices, a liquid crystal display or an organic light emitting display is formed by including a thin film transistor formed on the surface of a glass substrate as an active element. Such a thin film transistor is generally formed by depositing an amorphous silicon thin film on the surface of a transparent glass substrate or a quartz substrate, crystallizing it into a crystalline silicon thin film, and injecting a dopant necessary thereto to activate the thin film transistor.

An amorphous silicon thin film formed on such a glass substrate is generally formed by a chemical vapor deposition method (CVD), crystallized into a polysilicon thin film by a predetermined heat treatment process, and the necessary dopant is injected and activated.

A number of methods for crystallizing amorphous silicon thin films have been proposed.Solid phase crystallization (SPC), metal induced crystallization (MIC), excimer laser crystallization (Excimer Laser) Crystallization: ELC).

The solid phase crystallization method is a method of crystallizing through heat treatment at a predetermined temperature is a method of crystallizing the glass substrate on which an amorphous silicon thin film is generally formed by heat treatment at 600 ℃ or more.

Metal-induced crystallization is a method of inducing crystallization at a relatively low temperature by adding a predetermined metal element to the amorphous silicon thin film. However, in this method, if the heat treatment temperature is too low, the grain size is small and the crystallinity is poor, so that the driving characteristics of the device may be poor. In particular, the added metal is introduced into the channel region of the transistor, thereby increasing the leakage current. . Metal induced lateral crystallization (MIC) has been developed to improve the disadvantages of the metal induced crystallization method, and this method requires a heat treatment at 500 ° C. or higher to induce lateral crystal growth.

The excimer laser crystallization method is a method of irradiating an amorphous silicon thin film on a glass substrate with a high energy laser to instantaneously melt the amorphous silicon, and the molten silicon thin film is cooled again to crystallize. The excimer laser crystallization method can crystallize an amorphous silicon thin film without damaging the glass substrate, but there is a problem of deterioration of device characteristics due to streaked bonds due to laser irradiation or crystal phase unevenness due to nonuniformity of laser irradiation amount. have. In addition, this method requires a lot of initial investment and maintenance costs because the equipment is expensive, there is a limit to apply to mass production.

Meanwhile, in the thin film transistor using the polysilicon thin film, a process of injecting and activating a predetermined metal element with a dopant is further performed after the crystallization process as described above.

In general, in thin film transistors, in order to form n-type (or p-type) regions such as source and drain regions, arsenic, phosphorus, or boron may be formed using ion implantation or plasma doping. The same dopant is implanted in the required location of the polysilicon thin film. Then, the dopant is activated by a laser or heat treatment method.

In the activation process of such a dopant, a laser irradiation or heat treatment method is used, similar to the method of crystallizing an amorphous silicon thin film. For example, Excimer Laser Anneals (ELA) method, Rapid Thermal Anneals (RTA) method, Furnace annealing (FA) method and the like have been used.

The ELA method applies the same mechanism as the ELC used in the crystallization process of the amorphous silicon thin film, and activates the dopant in the process of rapidly remelting and crystallizing the polysilicon with a nano-second laser pulse. However, this ELA method is a problem found in the ELC method. That is, in the ELA method, re-melting and recrystallization are performed unevenly according to the non-uniformity of the laser irradiation amount, and thermal stress may be generated in the polysilicon thin film, and the reliability of the device may be degraded.

In addition, the RTA method heat-treats the glass substrate at a temperature of 600 degrees or more using an optical heating source such as tungsten-halogen or Xe arc lamp as a heating source. However, this RTA method causes a severe deformation of the glass substrate when it lasts more than a few minutes at a temperature of 600 degrees or more, and heat treatment at a temperature of 600 degrees or less has a problem in that the characteristics of the device are deteriorated due to insufficient activation.

The furnace annealing method activates the dopant implanted by maintaining the glass substrate on which the polysilicon thin film is formed for a predetermined time at a predetermined heat treatment temperature. However, in the furnace annealing method, when the heat treatment temperature is low, the device is unreliable due to insufficient activation of the dopant, requires several hours of processing time, and reduces productivity.

As described above, in the process of crystallizing the amorphous silicon thin film or activating the dopant, the heat treatment temperature affects the process time and the reliability of the crystallized polysilicon thin film or device.

In general, glass substrates used in LCDs or OLEDs are borosilicate glass substrates, and when they are exposed to 500 ° C. or more for a long time, thermal deformation occurs due to an increase in glass flow rate and other mechanical strengths. Deviation or damage is more severe when temperature deviations occur. That is, the glass substrate has a different heating rate between the inside, the edge, and the outside during heating or cooling, and a temperature difference is generated, and thermal stress is generated on the glass substrate by the temperature difference, thereby causing deformation. In addition, even when the glass substrate is maintained at a constant temperature, if the temperature distribution is not uniform, deformation occurs due to thermal stress, and shrinkage occurs due to uneven shrinkage due to densification.

Therefore, the glass substrate needs a means capable of preventing deformation of the glass substrate due to local heating of the glass substrate and consequently uneven stress when the heat treatment is performed at 600 ° C. or higher.

Conventionally, the apparatus for heat-treating a glass substrate by using a solid phase crystallization or metal induced crystallization method includes a horizontal continuous furnace and a vertical tubular furnace. The horizontal continuous furnace is a device that transfers and heat-treats a glass substrate using a conveyor or a roller into a long furnace of several tens of meters. The horizontal continuous furnace is heat treated while gently raising and lowering the temperature of the glass substrate in order to prevent damage and deformation of the glass substrate, so that the length of the overall furnace becomes long. Therefore, it is difficult to reduce the length of the furnace in a horizontal continuous furnace, and the heat treatment process time is lengthened to several hours to several tens of hours. In addition, the horizontal continuous furnace has a long heat treatment time, there is a limit to increase the heat treatment temperature in order to prevent the deformation of the glass substrate.

On the other hand, the vertical tubular furnace is a device for heat treatment at a time by mounting a plurality of glass substrates in a vertical direction in a quartz or silicon carbide (SiC) boat in a vertically formed furnace. Since the vertical tubular furnace is heat-treated by applying heat from the outside of the glass substrate, a temperature difference occurs between the inside and the outside of the glass substrate. In particular, when the glass substrate is large, the heating and cooling rates of the inside and the outside of the glass substrate are large. The difference is large and the glass substrate is severely deformed. In addition, the glass substrate is difficult to uniformly heat and cool because the heating and cooling rate is different between the portion in contact with the boat and the other portion is not. Therefore, the vertical tubular furnace is gradually heated and cooled to about 5 ℃ per minute in order to reduce the difference between the heating and cooling rate of the inside and outside of the glass substrate has a problem that the process time is long. In addition, the glass substrate is supported by the boat of the vertical tubular furnace, so if the heat treatment is performed for a long time at a temperature of 500 ° C. or higher, sagging occurs due to its own load. There is a problem that can not be used for heat treatment, but only used as a heat treatment equipment less than 500 ℃.

The present invention for solving the above problems is the crystallization of the amorphous silicon thin film formed on the surface of the glass substrate used for flat panel display panels such as LCD or OLED by using the heating by the lamp heater and the induction heating by the induced electromotive force at the same time Another object of the present invention is to provide a heat treatment system of a semiconductor device capable of preventing deformation of the semiconductor device while rapidly performing a heat treatment process of a semiconductor device including a dopant activation process of a polysilicon thin film at a higher temperature.

In order to solve the above problems, the heat treatment system of the semiconductor device of the present invention is a heat treatment system of the semiconductor device for heat-treating the semiconductor device, the charging unit for seating and transporting the semiconductor device and the support plate on which the semiconductor device is seated And a heating unit for heating the semiconductor transferred from the charging unit to the predetermined temperature, the heating unit including at least two heating furnaces each of which is independently controlled by setting the holding temperature step by step to a predetermined temperature, The process unit for heat-treating the semiconductor element at a predetermined heat treatment temperature by the heating by the lamp heater and the induction electromotive force by the induced electromotive force, and the holding temperature is set step by step from the heat treatment temperature to a predetermined cooling temperature, respectively, independently controlled Heat treatment process including at least two furnaces And a cooling unit which is performed to cool the semiconductor element transferred from the process unit to a predetermined cooling temperature, and a discharge unit which uniformly cools and discharges the semiconductor element cooled and conveyed to a predetermined cooling temperature to a predetermined cooling temperature. do. In this case, the process unit may include a lamp heater including an inner housing for forming a space in which the semiconductor element is transferred and undergoing heat treatment, and a plurality of lamps installed in a predetermined area of an upper or lower portion of the inner housing, and a plate or a plurality of blocks. And a first black body disposed in an area corresponding to at least a region in which the lamp heater is installed, between the inner housing and the lamp heater, and formed in a substantially block shape and respectively installed on the upper and lower portions of the inner and outer sides of the inner housing. It may include a core and an induction coil wound around the magnetic core. The process unit may further include a second black body formed to face the first black body with the semiconductor device interposed therebetween. The process unit may further include a roller installed below the inner housing and supporting and transporting the semiconductor device and the support plate. The process unit may further include a heat insulation plate formed in a plate shape having an area corresponding to the area of the inner housing and installed between the inner housing and the magnetic core. In this case, the lamp heater may be formed of a halogen lamp. In addition, the first black body and the second black body may be formed of silicon carbide or silicon carbide coated carbon body. In addition, the inner housing and the heat insulating plate may be formed of quartz. In addition, the induction coil may be wound around an induction coil groove formed on a surface of the magnetic core facing the inner housing. In addition, the magnetic core is installed to be spaced apart from the insulating plate by a predetermined gap, it may be formed to be cooled by the cooling gas supplied from the outside, it is preferable to be formed of a composite material of iron or ferrite powder and epoxy.

In addition, in the present invention, the process unit corresponds to an internal housing for forming a space in which heat treatment of the semiconductor device to be transferred is progressed, a lamp heater installed as a predetermined region in upper and lower portions of the inner housing, and at least an area in which the lamp heater is installed. It is formed in an approximately plate shape having an area to be formed, and the heating black body is installed in each of the upper and lower sides of the lamp heater and formed in a substantially block shape, the magnetic core is installed on the upper and lower parts of the outer housing and the induction winding to the magnetic core It may be formed including a coil. In this case, the heating black body may be formed of silicon carbide or a carbon body coated with silicon carbide.

The semiconductor device may be any one of semiconductor devices including an amorphous silicon thin film formed on an organic substrate, a polysilicon thin film formed on a glass substrate, and a glass substrate on which a semiconductor device is formed. In addition, the semiconductor device may be a thin film transistor used in a liquid crystal display or an organic light emitting display device.

In the present invention, the heat treatment may be any one of solid phase crystallization of the amorphous silicon thin film, metal induced crystallization, metal induced side crystallization, activation of the ion implanted polysilicon thin film, and precompaction treatment of the glass substrate. In addition, the heat treatment may be carried out at a temperature between 400 ℃ to 1000 ℃.

In addition, in the present invention, the semiconductor device may be transported by being seated on a support plate formed of quartz having a thickness of 3 mm to 10 mm. In addition, the support plate may be formed at least 10 mm wider and longer than the semiconductor device. At least four detachment holes may be formed in the support plate in a diagonal direction of a region in which the semiconductor device is seated. In this case, the removal hole is formed in a region within 10mm from each outside of the semiconductor element to be seated, preferably formed in a circular or square shape having a diameter or width smaller than 3mm.

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

1 shows a configuration of a heat treatment system of a semiconductor device according to an embodiment of the present invention. 2 shows a front view of a charging unit constituting the heat treatment system of the semiconductor device. 3 shows a plan view of the susceptor constituting the charging unit. 4A is a sectional perspective view of a heating furnace constituting a heating unit. FIG. 4B is a sectional perspective view of a portion where the heating furnaces of FIG. 4A are connected to each other. FIG. 5 is an external perspective view of a process unit according to an exemplary embodiment of the present invention. 6 is a perspective view of a part including an inner housing of the process unit and a lamp heater and a roller according to an embodiment of the present invention. 7 is a sectional view of a process unit according to an embodiment of the present invention. 8 is a perspective view of a magnetic core and an induction coil according to an embodiment of the present invention. 9 is a schematic cross-sectional view showing the induction heating portion of the magnetic core and the induction coil according to an embodiment of the present invention. 10 is a sectional view of a process unit according to another exemplary embodiment of the present invention. 11 is a schematic cross-sectional view showing an induction heating portion of a magnetic core and an induction coil according to another embodiment of the present invention. 12A shows a front view of the discharge portion constituting the heat treatment system of the semiconductor element. 12B shows the side view of FIG. 12A. 13A is a plan view of the cooling susceptor constituting the discharge portion. FIG. 13B is a cross-sectional view taken along the line A-A of FIG. 13A. 14 is a graph showing process conditions of heat treatment performed in the heat treatment system of the semiconductor device according to the embodiment of the present invention. FIG. 15 is a graph illustrating a change in slope of a UV curve indicating a degree of crystallization of an amorphous silicon thin film according to a current of an induction coil. FIG. 16A to 16D are graphs showing changes in Raman spectra of crystalline silicon thin films, respectively, when the applied current of induction coils is 0A, 20A, 30A, 40A. 17 is a diagram showing the crystal MILC growth distance according to the current of the induction coil after the MILC crystallization process. FIG. 18 is a graph illustrating changes in sheet resistance and UV curve slope according to heating temperature of a process unit and power amount of a halogen lamp. 19 is a graph showing the temperature change with time at each position of the glass substrate.

In the heat treatment system of a semiconductor device according to an embodiment of the present invention, referring to FIG. 1, the charging unit 100, the heating unit 200, the process unit 300, the cooling unit 400, and the discharge unit 500 may be used. It is formed to include. In the heat treatment system of the semiconductor device, the charging unit 100 to the discharge unit 500 are continuously installed in contact with each other so that external air is supplied to the heat treatment space in the heating unit 200, the processing unit 300, and the cooling unit 400. It will prevent the inflow. In addition, the heat treatment system of the semiconductor device is formed with a horizontal transfer means that is driven independently of the temperature control module that each component is independently controlled, so that the heat treatment can be performed by increasing or decreasing the temperature step by step for each component. . In addition, the heat treatment system of the semiconductor device performs heat treatment while the semiconductor device is seated on a separate setter so as not to be deformed. Accordingly, the heat treatment system of the semiconductor device may prevent deformation or damage of the semiconductor device while gradually increasing the temperature of the semiconductor device, thereby performing heat treatment of the semiconductor device in a shorter time. In addition, since the heat treatment system of the semiconductor device performs heat treatment within a short time while preventing deformation of the semiconductor device, heat treatment of the semiconductor device including the glass substrate is possible even at a higher temperature, that is, a temperature of 600 ° C. or higher. The semiconductor device 10, which is heat treated by the heat treatment system of the semiconductor device, refers to various semiconductor devices requiring heat treatment, and includes a glass substrate on which an amorphous silicon thin film is formed and a glass substrate on which a polysilicon TFT is formed. In addition, the semiconductor device includes a glass substrate that requires pre-compression in order to form a semiconductor thin film on the upper surface. Hereinafter, a case in which the semiconductor device is a glass substrate on which an amorphous silicon thin film is formed will be described.

First, the whole structure of the heat treatment system of a semiconductor element is demonstrated.

The charging unit 100 preheats the semiconductor element to be heated to a predetermined temperature and transfers it to the heating unit 200. The charging unit 100 is uniformly preheated to a predetermined temperature (for example, 200 ° C.) while supporting the semiconductor device, that is, the glass substrate on which the amorphous silicon thin film is formed so as not to be deformed.

The heating unit 200 heats the transferred semiconductor element to a predetermined temperature and transfers the same to the process unit 300. The heating unit 200 is configured to include at least two furnaces (furnace) 210, the temperature is independently controlled, is composed of an appropriate number in consideration of the heat treatment temperature. Therefore, the heating unit 200 is maintained at each heating furnace 210 is set to the appropriate temperature step by step, preferably, the last heating furnace by setting the set temperature to the heat treatment temperature, the heat treatment part 200 in the heating unit 200 Allow to proceed. For example, when the heat treatment temperature of the semiconductor device is 600 ° C, the heating unit 200 preferably includes three heating furnaces 210, and the first heating furnace connected to the charging unit 100 is provided. Considering the preheating temperature of the charging unit 100 is maintained at 300 ℃ or more, the second furnace and the third heating furnace is maintained at 600 ℃ or more heat treatment temperature. That is, the deformation of the semiconductor device can be prevented even if the heating temperature is rapidly increased at low temperatures. However, since the deformation may occur at high temperatures, it is preferable to gradually increase the heating temperature. Therefore, it is preferable that the heating unit 200 is set such that the holding temperature of the heating furnace 210 is rapidly heated at low temperature and gradually heated at high temperature.

The process unit 300 heat-processes the transferred semiconductor element at a predetermined heat treatment temperature, and transfers the transferred semiconductor element to the cooling unit 400 maintained at a predetermined temperature when the heat treatment is completed. The process unit 300 is installed in contact with the heating unit 200 and heats the semiconductor element transferred by heating by a lamp heater composed of a halogen lamp and induction heating by induction electromotive force to a high temperature instantaneously. Accordingly, the process unit 300 may heat the semiconductor device to a high temperature instantaneously and prevent deformation of the semiconductor device. Therefore, the process unit 300 is formed to include a magnetic core and an induction coil for the generation of induced electromotive force.

The cooling unit 400, like the heating unit 200, is composed of at least two furnaces (410) in which the temperature is independently controlled, it is composed of an appropriate number in consideration of the heat treatment temperature. For example, when the heat treatment temperature of the semiconductor device is 600 ° C, the cooling unit 400 preferably includes three heating furnaces 410, and the first heating furnace connected to the processing unit 300 is provided. It is maintained at the heat treatment temperature of the process unit 300, the second heating furnace is maintained at about 500 ℃, the third heating furnace is maintained below 300 ℃ in consideration of the discharge temperature. Therefore, the cooling unit 400 can cool the semiconductor device within a faster time. The cooling unit 400 cools the transferred semiconductor element to a predetermined temperature step by step and then transfers it to the discharge unit 500.

The discharge part 500 is uniformly cooled so that the semiconductor device is not deformed to a predetermined temperature (generally 100 ° C. or less) at which deformation of the transferred semiconductor device does not occur and is then transferred to the next process. Therefore, the cooling unit 400 may be formed to include various cooling means for uniformly cooling the semiconductor device to be transferred. In addition, the discharge part 500 may be provided with a heating means for heating the upper surface of the semiconductor device for uniform cooling of the semiconductor device.

Next, each component part of the heat treatment system of a semiconductor element is demonstrated.

Referring to FIG. 2, the charging unit 100 may move a susceptor 110 and the susceptor 110 up and down where the semiconductor device 10 and the support plate 20 are seated and preheated. It is formed to include the transport means 130 and the horizontal transport means 140 for transporting the support plate 20 to the left and right. In addition, the charging unit 100 may be formed on the susceptor 110 to include an auxiliary preheating means 150 for preheating the semiconductor device 10. The charging unit 100 is used to prevent the semiconductor device 10 from being deformed or damaged by a sudden temperature change and a local temperature difference while being transferred into the heating unit 200 maintained at a predetermined temperature higher than room temperature. It is preheated to a predetermined temperature and transferred. Meanwhile, as shown in FIG. 2, the charging unit 100 is formed to preheat the semiconductor device in the standby state, but if necessary, a separate case for blocking the susceptor 110 from the outside (not shown in the drawing). ) Can be mounted, it can be possible to supply a specific gas to the inside of the case to form the atmosphere.

The support plate 20 is preferably formed of a quartz material having a thickness of 3 mm to 10 mm, and is transported by mounting the semiconductor device 10 on the upper surface during the heat treatment process. If the thickness of the support plate 20 is thinner than 3mm, there is a fear that the support plate 20 is deformed during the heat treatment process. If the thickness of the support plate 20 is larger than 10mm, it takes a long time to heat, and thus the heat treatment rate of the semiconductor device is lowered. In addition, the support plate 20 supports the semiconductor element and simultaneously heats the semiconductor element 10 with conducted heat, so that the width and the length of the semiconductor element 10 are mounted on the upper portion for uniform preheating of the semiconductor element 10. It is formed larger than the width and length of), preferably is formed at least 10mm or more. The support plate 20 is preferably formed of a quartz material, but is not limited thereto, but may be formed of various materials including ceramic materials such as alumina nitride and boron nitride, and the material is limited thereto. It is not.

The support plate 20 is formed by penetrating up and down a detachment hole 22 for detaching the semiconductor device 10 seated on the upper portion. Preferably, at least 4 in a diagonal direction in the region where the semiconductor device 10 is seated. Formed of two holes. The detachment hole 22 may be formed at a position corresponding to the diagonal direction of the semiconductor device 10 or the center of each side surface. The detachable hole 22 is formed in a circular or rectangular shape having a diameter or width of the horizontal cross section smaller than 3 mm, and is preferably formed within 10 mm from the side surface of the semiconductor device 10. When the desorption hole 22 is formed inward of 10 mm, the temperature distribution of the semiconductor device 10 becomes uneven around the desorption groove 22 in the heat treatment process, and the glass substrate of the semiconductor device 10 may be deformed. In addition, when the size of the detachment hole 22 is greater than 3 mm, a phenomenon in which the glass substrate of the semiconductor element 10 sags locally at high temperature may occur.

Referring to FIG. 3, the susceptor 110 is a substantially horizontal plate shape having an area larger than that of the support plate 20 seated on the upper surface 111, and heating means 114 for heating the susceptor 110. The support plate 20 is formed to include a heat insulating groove 116 to uniformly heat. The susceptor 110 is formed at a height corresponding to the inlet of the heating unit 200. In addition, the susceptor 110 may be formed to include a roller groove 118 to accommodate the roller which is one of the horizontal transfer means of the support plate 20. The susceptor 110 is made of a material having high thermal conductivity, and efficiently transmits heat transferred from the heating means to the support plate 20. The susceptor 110 may be formed of any one of an aluminum metal or an alloy, graphite, aluminum oxide, aluminum nitride, and boron nitride. The material of the acceptor 110 is not limited. Meanwhile, in FIG. 3, the support plate 20 is positioned above the susceptor 110, but is indicated by a dotted line for convenience. In addition, the removable holes 22 formed at each corner portion of the support plate 20 are also indicated by dotted lines.

The heating means 114 is formed with a heating element such as a heating wire or a lamp, and is preferably installed inside the susceptor 110 so as to raise the temperature of the upper surface 111 of the susceptor 110 uniformly as a whole. do. That is, the heating means 114 is a heating element is formed by being installed at a predetermined interval inside the susceptor 110, is formed in the hole formed integrally with the susceptor 110 or inside the susceptor 110. It can be inserted and formed. On the other hand, the internal heating means 114 may be formed on the lower surface 112 of the susceptor 110 may be formed. The internal heating means 114 is preferably formed to have a capacity capable of heating the susceptor 110 to 200 ° C or more.

The insulating groove 116 is formed in a predetermined shape in the central region of the upper surface 111 of the susceptor 110. The insulation groove 116 reduces the contact area between the susceptor 110 and the support plate 20 to adjust the amount of heat conducted from the susceptor 110 to the central region of the support plate 116. Accordingly, the support plate 20 seated on the upper surface 111 of the susceptor 110 has a central portion in contact with the region where the heat insulation grooves 116 are formed and an outer portion in contact with the region where the heat insulation grooves 116 are not formed. The difference in heat that is conducted is generated so that the temperature of the support plate 20 is uniformly increased as a whole. In more detail, the susceptor 110 is heated by the internal heating means 114 to the entire surface 111 at a substantially uniform temperature, the support plate 20 is the top surface of the susceptor 110 In physical contact with the heat is transferred from the susceptor 110 is preheated. However, since the support plate 20 is heated to be exposed to the atmosphere as a whole, part of the heat transferred to the support plate 20 is radiated from the outside of the support plate 20 to the atmosphere. Therefore, the support plate 20 has the same heat conducted between the center and the outside, while the heat dissipation is different, so that a temperature deviation occurs between the center and the outside, and the temperature of the center becomes higher than the outside temperature. In this case, the temperature difference between the center and the outside of the semiconductor device 10 seated on the upper surface of the support plate 20 also occurs due to the temperature deviation of the support plate 20, resulting in deformation of the semiconductor device. However, when the insulating groove 116 is formed in the central region of the upper surface of the susceptor 111, the support plate 116 is the heat conduction heat is conducted to the central portion in contact with the region where the insulating groove 116 is formed. This becomes smaller than the heat conducted to the outer portion in contact with the unformed area. Therefore, the support plate 20 is substantially the same as the heat conducted to the center portion even if a part of heat conducted to the outer portion is radiated heat is uniformly heated as a whole. In addition, the semiconductor device 10 mounted on the upper surface of the support plate 20 is also heated uniformly as a whole.

The insulating groove 116 is formed in a predetermined area and shape in the central region of the susceptor 110 according to the size and preheating temperature of the support plate 20 and the semiconductor element 10. As shown in FIG. 3, the insulating groove 116 may be formed in a trench shape having a predetermined length extending in a left and right direction at a predetermined depth in a central region of the upper surface 111 of the susceptor. Of course it can be. In addition, the insulating groove 116 may be formed in a trench shape at a predetermined interval. The susceptor 110 is preferably insulated in the area of 20% to 70%, preferably 20% to 50% of the area of the support plate 20 seated on the upper surface of the susceptor 110 in the central portion ( 116 is formed. When the area in which the heat insulation grooves 116 are formed is smaller than 20% of the area of the support plate 20, the degree of blocking heat conducted to the center area of the support plate 20 becomes small, thereby increasing the temperature of the center area of the support plate 20. This becomes large and it becomes difficult to preheat the support plate 20 uniformly as a whole. In addition, when the area in which the heat insulation grooves 116 are formed is larger than 70% of the area of the support plate 20, the degree of blocking heat conducted to the outer portion of the support plate 20 is increased, thereby increasing the temperature of the outer portion relatively. It becomes small and it becomes difficult to preheat the support plate 20 uniformly as a whole.

In addition, when the preheating temperatures of the support plate 20 and the semiconductor element 10 are relatively small, that is, when the difference from the normal temperature is small, the amount of heat radiated from the side of the support plate 20 is relatively small. Therefore, even if the susceptor 110 is formed in a relatively small area of the insulating groove 116, the preheating temperature of the support plate 20 can be made uniform throughout.

 In addition, the insulating groove 116 may be formed by adjusting the trench width and the forming interval appropriately. However, when the trench width 116 is too large, an area in which heat is not conducted and an area in which heat is conducted are formed in the central portion of the support plate 20. Unevenness of temperature can result. In this case, the semiconductor element mounted on the upper portion of the support plate 20 may also cause deformation or damage due to non-uniformity of preheating temperature in the center portion. Therefore, the insulating groove 116 is preferably formed by increasing the number of trenches while reducing the trench width. In addition, the insulation groove 116 is formed so that the trench width is equal to or smaller than the trench formation interval, and is preferably formed to be smaller than 0.5 times. When the trench width 116 is greater than the trench spacing, the heat conduction to the support plate 20 is blocked so that the temperature of the inner portion in which the heat insulation grooves 116 are formed may be lowered. For example, the insulating groove 116 may be formed so that the trench width is 1mm to 3mm, the forming interval of the trench is 3mm to 6mm.

In addition, the insulating groove 116 is formed to a predetermined depth so that the support plate 20 and the susceptor 110 does not directly contact. However, if the depth of the insulation groove 116 is too deep, the installation position of the heating means 114 installed therein is far from the upper surface of the susceptor 110, it is necessary to form to an appropriate depth.

The roller groove 118 is formed at a front and rear sides of the susceptor 110 at predetermined intervals, and is formed to have a length such that a portion of the front and rear sides of the support plate 20 seated on the upper surface of the susceptor 110 can be contacted. In addition, the roller groove 118 is formed to a predetermined depth so that the roller does not protrude to the upper surface when the susceptor 110 is raised to support and preheat the support plate 20. Therefore, the support plate 20 is uniformly in contact with the upper surface 111 of the susceptor 110 during the preheating process, and after the preheating is finished, the support plate 20 is inserted into the roller groove 118 while the susceptor 110 is lowered. It is supported by the roller 140, which is conveyed from side to side. However, the roller groove 118 is formed when the roller is used as a horizontal transfer means 140 for transporting the support plate 20 to the left and right.

Referring to FIG. 2, the shanghai conveying means 130 is coupled to the lower surface 112 of the susceptor 110 to convey the susceptor 110 up and down. The susceptor 110 is elevated by the shanghai conveying means 130 to support the support plate 20 to preheat, and after the preheating is finished, the susceptor 110 is lowered to support the support plate 20 to the roller. The shanghai conveying means 130 may be a pneumatic cylinder, a ball screw feed mechanism, a timing belt, etc., preferably a pneumatic cylinder is used. However, the type of the Shanghai transport means 130 is not limited thereto, and various transport mechanisms for transferring the susceptor 110 up and down may be used. In addition, the shanghai conveying means 130 may be formed in a predetermined number depending on the weight, the area of the susceptor 110.

The horizontal transfer means 140 transfers the support plate 20 horizontally to the inside of the heating part 200. The horizontal conveying means 140 is preferably formed of a roller 140 that is inserted into the roller groove 118 of the susceptor 110 to rotate, the roller 140 considering the size of the support plate 20 to be transported It is formed at an appropriate interval. The roller 140 is rotatably supported by a separate supporting means (not shown), and is rotated by a separate driving means (not shown). Therefore, a plurality of the rollers 140 are installed at a predetermined interval in the horizontal direction, and rotates to transport the support plate 20 mounted on the upper portion in the horizontal direction.

On the other hand, the horizontal transfer means 140 may be used in addition to the pneumatic cylinder, ball screw transfer mechanism, etc., but is not limited thereto. For example, when a pneumatic cylinder is used as a horizontal transfer means, referring to Figure 2, the pneumatic cylinder is supported by a separate support means on the outside of the susceptor 110, while supporting the support plate 20 from left to right Push it horizontally. When the transfer mechanism is used as the horizontal transfer means, the roller groove 118 does not need to be formed on the upper surface of the susceptor 110.

Referring to FIG. 1, the heating unit 200 includes an appropriate number of heating furnaces 210 in consideration of the heat treatment temperature, and includes at least two heating furnaces 210. The heating unit 200 is each heating furnace 210 is maintained at an appropriate temperature step by step according to the heat treatment temperature, respectively, and is independently controlled. In addition, the heating unit 200 preferably sets the set temperature of the last heating furnace 210 to the heat treatment temperature so that some heat treatment may be performed in the heating unit 200.

Referring to FIG. 4A, the heating furnace 210 includes a heating unit 230, a semiconductor element 10, and a support plate 20 that generate heat in the body 220 and the body 220 that form the body. It is formed including a roller 240 for transporting the horizontal. The heating furnace 210 has an inlet 212 into which the support plate 20 and the semiconductor element 10 are charged, and an outlet 214 through which the support plate 20 and the semiconductor element 10 are discharged to the other side to a predetermined height. Is formed. In addition, the heating furnace 210 may be formed to include a position sensor (not shown in the figure) that detects the position in which the support plate 20 is transported and heated therein. In addition, the heating furnace 210 may be provided with a gas supply means (not shown) for constantly supplying an inert gas such as nitrogen gas therein. The heating furnace 210 may be maintained at a positive pressure in a constant atmosphere by the gas supplied, and the internal temperature may be more uniformly prevented from entering the outside air. The gas supply means is preferably configured such that gas is supplied from the top of the furnace 210 to the inside and discharged to the bottom of the furnace 210.

The body portion 220 is an outer housing 222 forming the appearance of the heating furnace 210, the heat insulating material (223a, 223b) and the heat insulating material are installed to be spaced up and down inside the outer housing 222. The inner spaces 224a and 224b are formed at upper and lower portions of the inner spaces 223a and 223b to be spaced apart from each other by a predetermined interval and form a heat treatment space of the heating furnace 210. The inner housings 224a and 224b are preferably made of quartz to prevent contamination of the heat treatment space therein.

The heating means 230 is formed to include a heating element 232 and the thermocouple 236. In addition, the heating means 230 may include a second heating element 234 is installed on the upper and lower portions of the inlet 212 and the outlet 214 of the heating furnace 210. In addition, the heating means 230 may be formed to include a conductive plate 238 formed adjacent to the inner housing (224a, 224b) between the inner housing (224a, 224b) and the heating element (232).

The heating element 232 is installed at predetermined intervals between the inner housings 224a and 224b and the heat insulating materials 232a and 232b and heats the heat treatment space to a predetermined temperature. The heating element 232 may be installed only in the upper portion of the heating furnace 210, of course, may be installed in both the upper and lower portions. The heating element 232 may be formed in an appropriate amount according to the set temperature of the heating furnace 210. The heating elements 232 are formed in a predetermined number independently controlled, rather than being formed as a single heating element as a whole, and are preferably installed and controlled in predetermined regions divided based on the horizontal plane of the heating furnace 210. For example, by dividing the heating furnace 210 into nine regions, the heating element 232 may be installed in each region to control the internal temperature of the heating furnace 210. Since the inside of the furnace 210 may generate a temperature deviation for each region on the basis of a horizontal plane, in order to independently control the heating elements 232 of each region to compensate for such deviation, the temperature may be more uniformly controlled. It becomes possible. A resistance heater or a lamp heater may be used as the heating element 232, but the type of the heating element 232 is not limited thereto.

The second heating element 234 is installed at the upper and lower portions of the inlet 212 and the outlet 214 of the heating furnace 210 to prevent the temperature of the inlet 212 and the outlet 214 is lower than the inner side. . That is, since the temperature of the inlet 212 and the outlet 214 of the heating furnace 210 is leaked to the outside, the temperature is relatively low, so that a separate heating element may be installed to maintain the same temperature as the inside. Like the heating element 232, the second heating element 234 may be a resistance heater or a lamp heater, and the type of the second heating element 234 is not limited thereto.

The thermocouple 236 is installed at a position close to the upper inner housing 224a to measure the temperature of the heating furnace. The heating element 232 is controlled based on the temperature measurement result of the thermocouple 236. On the other hand, when the heating element 232 is installed independently for each region, the thermocouple 236 is also installed corresponding to the heating element 232 independently. In addition, the thermocouple 236 may also be installed in the heat treatment space so as to accurately measure the temperature in the heat treatment space.

The conductive plate 238 is installed between the heating element 232 and the inner housings 224a and 224b in an area corresponding to the horizontal area of the heat treatment space, and the heat of the heating element 232 is in the inner housings 224a and 224b. To ensure uniform delivery. That is, since the heating elements 232 are formed at predetermined intervals, the inner housings 224a and 224b may have a local temperature difference, and such a difference may occur in an internal heat treatment space. Therefore, the conductive plate 238 allows the heat of the heating element 232 to be more uniformly transferred to the inner housings 224a and 224b. The conductive plate 238 may be formed of a metal or ceramic material having excellent thermal conductivity. For example, the conductive plate 238 may be formed of a material such as stainless steel, copper, aluminum, or alumina.

The roller 240 is formed in a substantially cylindrical shape, and a plurality of rollers 240 are installed at predetermined intervals inside the inner housings 224a and 224b of the heating furnace 210. The roller 240 is formed at predetermined intervals according to the size of the heating furnace 210 and the size of the support plate 20 to be transferred. The roller 240 is installed in a direction perpendicular to the conveying direction of the support plate 20, the directions of the inlet 212 and the outlet 214, and extends to the outside of the outer housing 222 to be displayed as a separate rotating means (shown in the drawing). Not rotated). The roller 240 is formed at a predetermined height inside the inner housings 224a and 224b, and is preferably formed at a position higher than a bottom surface of the inlet 212 and the outlet 214 of the heating furnace 210. The lower surface of the supporting plate 20 is not in contact with the bottom surface of the inlet 212 and the outlet 214. The roller 240 is preferably made of quartz, which is the same material as the inner housings 224a and 224b, so that the generation of contaminants due to friction during the transfer of the support plate 20 is minimized.

4B, the inner housings 224a and 224b are coupled to each other when the respective heating furnaces 210 are connected to each other so that the outside air flows in or the air inside flows out. To prevent as much as possible.

5 to 7, the process unit 300 includes an outer housing 310, an inner housing 315, a lamp heater 320, a first black body 330, a magnetic core 340, and an induction coil. It is formed including the 350. In addition, the process unit 300 may include a second black body 335, a heat insulating plate 360, and a roller 370. The process unit 300 uses the lamp heater 320 and the first black body 330 to at least heat the semiconductor device 10, which is heated and transferred to the predetermined temperature from the heating unit 200. Maintain at its final temperature. In addition, the process unit 300 performs heat treatment by uniformly heating the semiconductor device 10 to a locally high temperature within a short time through induction heating using the magnetic core 340 and the induction coil 350. On the other hand, the process unit 300 is used as a part of the heat treatment system of the semiconductor device according to the present invention, but can be used independently as a heat treatment equipment and can also be used in heat treatment equipment of a general semiconductor device.

Referring to FIG. 5, the external housing 310 forms an outer shape of the process unit 300 and blocks heat emission to the outside. The outer housing 310 has an entrance 312 in which the semiconductor device 10 is transferred to one side and the other side thereof. The outer housing 310 is preferably formed so that the top and bottom are separated from each other.

Reference numeral 314 denotes a pyrometer for measuring the temperature of the heat treatment space inside the process unit 300. In order to minimize the generation of contaminants in the heat treatment space, pyrometers are used instead of the commonly used thermocouples. Referring to FIG. 7, the pyrometer 314 measures the temperature of the heat treatment space on the semiconductor device 10.

6 and 7, the inner housing 315 includes an upper inner housing 315a and a lower inner housing 315b, and is spaced apart from the inner housing 310 by a predetermined interval. The upper inner housing 315a and the lower inner housing 315b are spaced apart from each other by a predetermined distance to form a space in which the heat treatment of the semiconductor device 10 transferred to the inside is performed. In addition, the inner housing 315 is provided with a lamp heater 320, the first black body 330, the second black body 335 and the roller 370 therein. Accordingly, the inner housing 315 may have a space in which the semiconductor element 10, the lamp heater 320, the first black body 330, the second black body 335, and the roller 370 may be formed. The distance between the upper inner housing 315a and the lower inner housing 315b is set. Preferably, the separation distance is set so that a minimum space is formed for temperature uniformity in the heat treatment space. In the inner housing 315, an inner doorway 317 is formed at a position corresponding to an entrance of the outer housing 310 so that the semiconductor device 10 and the support plate 20 enter and exit. The inner housing 315 is preferably formed of quartz to prevent the generation of contaminants in the heat treatment space maintained at a high temperature.

The lamp heater 320 is composed of a plurality of halogen lamps, it is installed in a predetermined region on the upper or lower portion of the inner housing 315. The lamp heater 320 is preferably installed in a maximum area in the width direction of the inner housing 315 so as to increase the heating area of the semiconductor device 10 to the maximum. In addition, the lamp heater 320 is preferably installed under the inner housing 315 in which the roller 370 is installed to minimize the height of the heat treatment space, thereby heating the semiconductor device 10 from the bottom. Preferably, the halogen lamps are installed so that a plurality of the halogen lamps are positioned in a direction perpendicular to the transfer direction of the semiconductor device 10, and the installation interval may be adjusted according to the temperature and temperature uniformity in the heat treatment space. In addition, the lamp heater 320 may further include an entrance lamp heater 322 installed in the outlet inlet 317 of the inner housing 315. Since the lamp heater 320 is installed side by side in the width direction of the halogen lamp perpendicular to the transfer direction of the semiconductor element 10, the semiconductor element 10 can be heated uniformly in the longitudinal direction as a whole. The lamp heater 320 is preferably formed of a halogen lamp, which is not limited to the type of lamp, it is a matter of course that a variety of lamps that emit a wavelength of the visible light region can be used. In addition, the lamp heater 320 may also be used a variety of lamps including an infrared lamp that emits a wavelength in the infrared region.

The lamp heater 320 emits heat having a wavelength in the visible light region, and selectively heats a specific portion of the semiconductor device 10. The semiconductor device 10 includes a silicon thin film or a metal thin film and a glass substrate coated thereon, and is transported by being seated on a quartz support plate. In this case, the visible light emitted from the halogen lamp of the lamp heater 1320 has a very low absorption rate for the support plate and the glass substrate, thereby reducing the heating effect, and an amorphous silicon thin film or a metal thin film (for example, a dopant) coated on the glass substrate. The gate metal of the TFT element in which the activation proceeds has a very high absorptivity and a large heating effect. That is, the lamp heater 320 is selectively heated rapidly with respect to the amorphous silicon or metal thin film coated on the glass substrate.

The first black body 330 is a black body such as a plate-like silicon carbide or a silicon carbide coated carbon body, it may be formed of a plurality of substantially plate-like blocks having a predetermined size. The first black body 330 is provided with an area corresponding to at least the area where the lamp heater 320 is formed. In addition, the first black body 330 is installed between the inner housing 315 and the lamp heater 320 in the upper or lower portion of the inner housing 315. That is, the first black body 330 is formed on the rear side of the lamp heater 320 in the same direction as the lamp heater 320 based on the transferred semiconductor element 10. In this case, the lamp heater 320 heats the lower first black body 330 while directly heating the semiconductor element 10 in the lower portion of the semiconductor element 10 to more effectively heat the first black body 330. It becomes possible. However, the first black body 330 may be formed at a position opposite to the lamp heater 320 based on the semiconductor device 10.

Since the first black body 330 has a characteristic of absorbing light of almost all wavelengths, the first black body 330 absorbs and radiates radiant heat emitted from the lamp heater 320, and is heated to 800 ° C. or more, and emits infrared ray heat. . Therefore, the first black body 330 selectively heats the glass substrate and the support plate 20 of the semiconductor device 10. Since the amorphous silicon thin film (or metal thin film) of the semiconductor device 10 is selectively heated by the lamp heater 320, if the heating temperature is too high, it may cause deformation of the glass substrate. Therefore, when the amorphous silicon thin film of the semiconductor device 10 is heated, it is necessary to properly heat the glass substrate and the support plate. The first black body 330 heats the glass substrate of the semiconductor device 10 and the support plate 20 made of quartz more effectively to reduce the temperature deviation between the amorphous silicon thin film on the upper portion.

When the first black body 330 is formed at the lower portion of the inner housing 315, each inside of the inner housing 315 may be prevented from losing heat of the lamp heater 320 through the inner entrance 337. A heat insulation black body 332 may be further included between the doorway 337 and the halogen lamp of the lamp heater 320 positioned at the outermost portion. The heat insulation black body 332 is formed to have a height corresponding to the height of the lamp heater 320 and at least a length corresponding to the length of the internal entrance 337.

The second black body 335 is formed of a plate-like silicon carbide or a black body, such as carbon coated with silicon carbide, such as the first black body 330, at least in an area corresponding to the installation region of the first black body 330 Is installed. In addition, the second black body 335 is installed in a direction opposite to the first black body 330 based on the semiconductor device 10 to heat the semiconductor device 10 while being heated by the heating of the lamp heater 320. . Therefore, when the first black body 330 is installed below the inner housing 315, the second black body 335 is installed on the upper portion of the inner housing 315 and is transferred to the upper surface of the semiconductor device 10. The semiconductor device 10 is heated at a close distance in direct proximity to the semiconductor device 10. In addition, when the first black body 330 is formed at the top, the second black body 335 is installed at the bottom.

The magnetic core 340 is, with reference to Figure 7, is formed of a material having magnetic properties, it is preferably formed of a composite of magnetic powder and a resin, such as iron or ferrite. When the magnetic core 340 is formed of a general metal or oxide magnetic material, the energy loss is increased at a high frequency, so that the magnetic core 340 is formed of a composite of a magnetic powder and a resin to minimize energy loss at a high frequency. As the resin constituting the magnetic core 340, various resins including an epoxy resin may be used.

The magnetic core 340 includes an upper magnetic core 340a and a lower magnetic core 340b in a substantially block form and is spaced apart from the inner housing 315 by a predetermined distance from the outside of the inner housing 315 and formed on the upper and lower portions, respectively. do. The magnetic core 340 is installed to be symmetrical up and down about the inner housing 315, so that the induction heating by the induced electromotive force is generated in the regions corresponding to each other of the first black body 330 and the second black body 335 do. The magnetic core 340 is preferably formed with an induction coil groove 342 in which the induction coil 350 is wound on a surface opposite to the inner housing 315. Therefore, the induction coil groove 342 is formed on the lower surface of the upper magnetic core 340a installed on the upper side and the upper surface of the lower magnetic core 340b installed on the lower side, respectively. The magnetic core 340 is formed at least in the length of the semiconductor element 10 to be heat-treated (that is, the length perpendicular to the direction in which the semiconductor element is conveyed) so that the semiconductor element 10 can be heated in the longitudinal direction as a whole. do. In addition, the magnetic core 340 is formed with a predetermined width so as to locally heat a predetermined width region of the semiconductor device together with the induction coil 350. That is, the magnetic core 340 is formed such that the distance between the induction coil grooves 242 is the heating width of the semiconductor device 10. The magnetic core 340 is preferably formed to heat a region of 5-200mm.

The magnetic core 340 is installed spaced apart from the inner housing 315 at a predetermined interval, and a separate cooling gas is supplied between the magnetic core 340 and the inner housing 315 to heat the inner housing 315. It is prevented from being transmitted to the magnetic core 340. Therefore, the magnetic core 340 is preferably formed in the central region between the guide coil groove 342, the cooling gas injection hole 344 penetrating from the top to the bottom, the gas supplied from the center region to the outer region The magnetic core 340 is cooled while flowing. The cooling gas injection holes 344 may be formed in an appropriate number and diameter or size according to the length of the magnetic core 340. However, the cooling gas injection hole 344 may be formed by a separate pipe on the side of the magnetic core 340, of course. The cooling gas injection hole 344 is connected to a separate cooling gas supply pipe 345 and the cooling gas is supplied from the outside.

Reference numeral 346, which is not described, is a support bracket for supporting the magnetic core 340 by connecting it to the outer housing 310.

Referring to FIG. 8, the induction coil 350 includes an upper induction coil 350a and a lower induction coil 350b, and an upper magnetic core 340a and a lower portion formed on an upper side of the inner housing 315. Winding is formed in each of the guide coil grooves 342 of the lower magnetic core (340b) to be formed. The induction coil 350 is preferably formed such that the upper induction coil 350a and the lower induction coil 350b are electrically connected to each other and simultaneously controlled. The induction coil 350 may be formed in a hollow so that the cooling water flows therein.

9 is a schematic cross-sectional view showing the induction heating portion of the magnetic core and the induction coil according to an embodiment of the present invention.

Referring to FIG. 9, the magnetic core 340 and the induction coil 350 locally localize predetermined regions (a) of the first black body 330 and the second black body 335 by induction heating by induction electromotive force. Will be heated. The induction coil 350 is connected to a high frequency AC power supply (not shown) and a matching system (not shown) for impedance correction of the power supply and the induction coil so that a current having a predetermined frequency and magnitude is provided. Is approved. The induction coil 350 is applied with a current having a frequency of 10 KHz to 100 MHz, and the magnetic core 340 and the induction coil 350 are applied with the current of the first black body 330 and the second black body 335. Induced current is generated in a predetermined region. Accordingly, the first black body 330 and the second black body 335 heat the semiconductor device 10 to a locally high temperature. As described above, the lamp heater 320 directly heats the first black body 330 and the second black body 335 while directly heating a specific portion of the semiconductor element 10 by visible light. The 330 and the second black body 335 emit infrared light to heat another part of the semiconductor device 10. Heating by the visible light of the lamp heater 320 can be controlled by controlling the current applied to the lamp, but if the current of the lamp is increased according to the temperature rise of the first black body 330 and the second black body 335 The increased amount of infrared radiation makes it difficult to independently control visible and infrared heating. Accordingly, the magnetic core 340 and the induction coil 350 may control infrared heating by locally heating the first black body 330 and the second black body 335 by induction heating independently of the lamp heater 320. It becomes possible. On the other hand, the heating of the first black body 330 and the second black body 335 by induction heating is more efficient than the resistance heating, and it is not necessary to connect the electrode and wiring required for resistance heating to the first black body 330. It can be installed more easily.

The heat insulating plate 360 is preferably formed of quartz, but the material of the heat insulating plate 360 is not limited thereto, and various materials having heat insulating properties may be used. The insulation plate 360 is formed in a substantially plate shape having an area corresponding to at least the area of the inner housing 315 and is installed between the inner housing 315 and the magnetic core 340. Therefore, the heat insulating plate 360 is a lower insulating plate (30a) installed between the upper inner housing (315a) and the upper magnetic core (340a) and the upper insulating plate (360a) and the lower inner housing (315b) and the lower magnetic core (340b). 360a) is formed. The heat insulating plate 360 prevents heat from being transferred from the inner housing 315 to the magnetic core 340, the induction coil 350, and the outer housing 310.

The roller 370 is preferably made of quartz to minimize the generation of contaminants in the interior of the inner housing 315. The roller 370 is formed in a substantially cylindrical shape, and is formed at predetermined intervals according to the size of the inner housing 315 and the size of the support plate 20 to be transferred to the inside of the inner housing 315. Since the process part 300 is formed to have a narrower width than the heating part 200 or the cooling part 400, the roller 370 is formed in a relatively small number, and about two are used. In addition, when the lamp heater 320 is installed at the bottom, it is necessary to increase the number of lamp heaters 320 and minimize the number of rollers 370 for uniform heating. The roller 370 is installed in a direction perpendicular to the conveying direction of the support plate 20 and extends to the outside of the outer housing 310 to be rotated by a separate rotating means (not shown). The roller 370 rotates and transfers the support plate 20 and the semiconductor element 10 which are in contact with the upper portion in a predetermined direction.

10 is a schematic cross-sectional view of a processing unit according to another embodiment of the present invention. 11 is a schematic cross-sectional view showing an induction heating portion of a magnetic core and an induction coil according to another embodiment of the present invention.

Referring to FIG. 10, the process unit 1300 according to another embodiment of the present invention may include an outer housing 1310, an inner housing 1315, a lamp heater 1320, a heating black body 1330, and a magnetic core 1340. And an induction coil 1350. In addition, the process unit 1300 may include a heat insulating plate (not shown) and a roller 1370. Since the process unit 1300 according to the present embodiment has an external housing, an internal housing, a magnetic core, an induction coil, and a roller having the same configuration as the process unit 300 according to the embodiment of FIG. 5, the detailed description is omitted here. do. Therefore, hereinafter, the process unit 1300 according to another embodiment of the present invention will be described based on a different part from the process unit 300 according to the embodiment of the present invention.

The inner housing 1315 includes an upper inner housing 1315a and a lower inner housing 1315b, and the semiconductor device 10 is transferred therein to form a space in which heat treatment is performed. The lower inner housing 1315 may have a protrusion 1319 protruding to a predetermined height in an area corresponding to a predetermined area where the lamp heater 1320 and the heating black body 1330 are installed. Since the lower inner housing 1315a is provided with a roller 1370 for transferring the upper semiconductor element 10, the height between the semiconductor element 10 and the lower inner housing 1315b is greater than that of the semiconductor element 10 and the upper inner portion. It becomes larger than the height between the housings 1315a. Accordingly, the lower inner housing 1315 is provided with a protrusion 1319 such that the lamp heater 1320 and the heating black body 1330 are spaced apart from the semiconductor element 10 at the same height as above. However, the protrusion may not be integrally formed with the lower inner housing 1315a, but may be formed by a separate block.

The lamp heaters 1320 are installed at upper and lower portions of the inner housing 1315, respectively, and are installed in a region having a predetermined width in a direction perpendicular to the traveling direction of the semiconductor device 10. In addition, the lamp heater 1320 is installed to form a plane substantially parallel to the plane of the semiconductor device 10. The width of the lamp heater 1320 is installed may be set according to the heat treatment characteristics of the semiconductor device, the heat treatment temperature and the high temperature heating time.

In addition, the entrance lamp heaters 1322 are respectively installed at the entrances and exits of the internal housing 1315 to further heat the semiconductor element 10 and the support plate 20 to prevent sudden temperature changes.

The heating black body 1330 is respectively installed in an area corresponding to an area in which the lamp heater 1320 is installed between the lamp heater 1320 and the semiconductor element 10 at upper and lower portions of an internal housing 1315. It is installed to be spaced apart from the element 10 by a predetermined distance. Accordingly, the heating black body 1330 receives the heat from the lamp heater 1320 and heats the semiconductor device 10 which is transported by emitting infrared rays while being heated. The heating black body 1330 is installed to be located in close proximity to the semiconductor device 10 and the support plate 20, preferably, the upper and lower heating black body 1330 is the upper surface and the support plate 20 of the semiconductor device 10 Approximately the same distance is spaced apart so that the semiconductor device 10 and the support plate 20 can be uniformly heated at the same time. Accordingly, the lamp heater 1320 and the heating black body 1330 installed at the lower portion are installed at the protrusion 1317a protruding from the lower inner housing 1315a or formed by a separate block.

The heating black body 1330 is additionally installed in an area in which the entrance lamp heater 1322 is installed to emit heat while receiving heat from the entrance lamp heater to emit infrared rays, so that the semiconductor element 10 and the support plate 20 are formed at the entrance part. This prevents the temperature from changing drastically.

The magnetic core 1340 and the induction coil 1350 are respectively installed on the upper and lower portions of the inner housing 1315 to inductively heat the heating black body 1330 installed in the central region.

The roller 1370 is installed at a lower portion of the inner housing 1315 at predetermined intervals to transfer the support plate. The roller 1370 is preferably installed outside the region in which the lamp heater 1320 is heat-treated to maintain the temperature uniformity of the heat treatment region of the semiconductor device 10. Accordingly, the roller 1370 is preferably installed between the entrance and exit of the internal housing 1315 and the area where the lamp heater 1320 is installed.

Referring to FIG. 11, the process unit 1300 according to another exemplary embodiment of the present invention may be heat-treated by infrared heating of the lamp heater 1320 and the heating black body 1330 heated by induction heating, thereby forming an amorphous silicon thin film. In the crystallization or dopant activation process of the polycrystalline silicon thin film, the glass substrate and the supporting plate are simultaneously heated together with the thin film.

Like the heating unit 200, the cooling unit 400 is formed to include at least two heating furnaces 410, and the support plate 20 and the semiconductor heated in the heating unit 200 or the process unit 300. The element 10 is cooled below a predetermined temperature at which the glass substrate is not deformed. The cooling unit 400 may be installed to increase the number of the heating furnace 410 when the support plate 20 and the semiconductor element 10 is cooled to a sufficiently low temperature step by step. The heating furnace 410 of the cooling unit 400 is set and maintained step by step at a temperature lower than the heat treatment temperature, it is cooled to maintain the support plate 20 and the semiconductor element 10 to be transferred to a predetermined temperature. In addition, the heating furnace 410 of the cooling unit 400 may also be provided with a gas supply means (not shown) to supply the gas from the outside, the support plate 20 by supplying the gas cooled to a predetermined temperature And the semiconductor element 10 can be cooled more effectively and uniformly. Since the heating furnace 410 of the cooling unit 400 is the same as or similar to the heating furnace 210 of the heating unit 200, a detailed description thereof will be omitted.

12A and 12B, the discharge part 500 includes a cooling susceptor 510, a cooling up and down conveying means 520, a gas injection nozzle 530, and a cooling horizontal conveying means 540. do. In addition, the discharge part 500 may be formed to include an upper heating means (550).

13A and 13B, the cooling susceptor 510 is formed in a substantially horizontal plate shape having an area larger than that of the supporting plate 20 seated on the upper surface 511, and the cooling susceptor 510 is moved up and down. It is formed including the injection hole 514 penetrating. The cooling susceptor 510 is formed such that an upper surface thereof is at a height corresponding to an outlet of the cooling unit 400. In addition, the cooling susceptor 510 may be formed to include a cooling roller groove 518 for receiving a roller which is one of the horizontal transfer means for transporting the support plate 20 horizontally. The cooling susceptor 510 is made of a material having high thermal conductivity, and allows the heat of the support plate 20 and the semiconductor element 10 to be quickly conducted and released. The cooling susceptor 510 may be formed of any one of aluminum metal or alloy, graphite, aluminum oxide, aluminum nitride, and boron nitride. The material of the cooling susceptor 510 is not limited.

The injection hole 514 penetrates up and down in a predetermined region of the cooling susceptor 510 and is formed in a predetermined shape. The injection hole 514 sprays a cooling gas to the support plate 20 and the lower surface of the semiconductor element 10 transferred to the upper surface 511 of the cooling susceptor 510 to allow the support plate 20 to be cooled more uniformly. . That is, when the support plate 20 is transferred from the cooling unit and exposed to the atmosphere, a temperature deviation may occur while the outer portion of the support plate 20 is naturally cooled faster than the center portion. Therefore, when the injection hole 514 is transferred to the upper surface of the cooling susceptor 510, the gas is uniformly injected from the lower surface of the support plate 20 so that the support plate 20 may be uniformly forcedly cooled.

The injection hole 514 is formed in a predetermined area and shape in the central region of the cooling susceptor 510 according to the size and cooling temperature of the support plate 20 and the semiconductor element 10. The injection hole 514 is formed in a cylindrical shape penetrating the upper surface and the lower surface in the central region in the width direction of the cooling susceptor 510. In addition, the injection hole 514 may be formed in a polygonal shape including a triangular shape or a quadrangular shape in addition to the circular shape. The injection hole 514 is preferably formed in a region corresponding to a width of at least 50% of the width of the support plate 20 transferred to the upper portion of the cooling susceptor 510 in the width direction of the cooling susceptor 510. When the injection hole 514 is formed in the cooling susceptor 510 in an area smaller than 50% of the width of the support plate 20, the support plate 20 and the semiconductor element 10 may not be uniformly cooled in the width direction. And may be modified according to local cooling temperature differences. However, the injection hole 514 is not formed in the roller groove 518 forming region before and after the cooling susceptor 510. In addition, the injection hole 514 may be formed in the entire length of the cooling susceptor 510 in the longitudinal direction.

In addition, the injection hole 514 may be formed by appropriately adjusting the size and spacing of the holes. The injection hole 514 is formed as a hole having a diameter of 0.5 to 3mm, preferably formed to have a diameter of 0.5 mm to 1.5mm. In addition, when the injection hole 514 is formed in a polygonal shape it is formed to have a width of 0.5mm to 3mm. If the diameter of the injection hole 514 is smaller than 0.5mm, the gas injection amount is small, the cooling effect is small, and the phenomenon that the hole is easily clogged by foreign matter occurs. In addition, when the diameter of the injection hole 514 is larger than 3mm, the amount of gas injection is large, thereby causing a local temperature deviation. In addition, the injection holes 514 are formed at intervals larger than the diameter of the hole, preferably at least five times larger than the diameter of the hole. When the spacing between the injection holes 514 is smaller than the diameter of the holes, the gaps between the holes are so small that the holes are deformed and blocked, thereby reducing the durability of the cooling susceptor 510.

A separate gas supply means 516 for supplying gas to the injection hole 514 is connected to the lower surface 512 of the cooling susceptor 510. The gas supply means 516 may be formed at the side of the cooling susceptor 510 depending on the method of forming the injection hole 514.

The cooling roller groove 518 is formed at the front and rear sides of the cooling susceptor 510 at predetermined intervals, and the length of the front and rear portions of the supporting plate 20 seated on the upper surface of the cooling susceptor 510 may be in contact with each other. Is formed. In addition, the cooling roller groove 518 is formed to a predetermined depth so that the cooling susceptor 510 when the support plate 20 is raised, so that the roller 540 does not protrude to the upper surface. Therefore, the support plate 20 is uniformly in contact with the upper surface 511 of the cooling up and down conveying means 520 in the cooling process, the cooling susceptor 510 is lowered after the cooling is finished, the cooling roller groove 518 It is supported by the roller 540 inserted in the is transported to the left and right. However, the cooling roller groove 518 is formed when the roller is used as a horizontal conveying means 540 for transporting the support plate 20 from side to side.

The cooling up and down conveying means 520 is coupled to the lower surface 512 of the cooling susceptor 510 to convey the cooling susceptor 510 up and down. The cooling upper and lower conveying means 520 is a cooling susceptor 510 such that the support plate 20 is lowered when the support plate 20 is transferred from the cooling unit 400 or the roller 540 protrudes from the upper surface of the support plate 20. Will be transferred. In addition, the cooling upper and lower conveying means 520 when the transfer of the support plate 20 is completed, the cooling susceptor 510 is fully raised to transport the support plate 20 to be seated on the upper surface of the cooling susceptor 510. In addition, the cooling up and down conveying means 520 lowers the cooling susceptor 510 when the cooling of the support plate 20 and the semiconductor element is completed so that the support plate 20 can be transferred by the roller. The shanghai conveying means 130 may be a pneumatic cylinder, a ball screw feed mechanism, a timing belt, etc., preferably a pneumatic cylinder is used. However, the type of the Shanghai transport means 130 is not limited thereto, and various transport mechanisms for transferring the susceptor 110 up and down may be used. In addition, the shanghai conveying means 130 may be formed in a predetermined number depending on the weight, the area of the susceptor 110.

The gas injection nozzle 530 is composed of an upper nozzle 530a and a lower nozzle 530b, and each of the upper nozzle 530a and the lower nozzle 530b is formed in a predetermined width by combining a plurality of independent nozzles, or It can be formed with one nozzle having a width. The gas injection nozzle 530 injects a gas such as nitrogen gas to forcibly cool the support plate 20 and the semiconductor device 10. The gas injection nozzle 530 determines the size of the nozzle inlet through which the gas is injected in consideration of the required cooling rate and the transfer speed of the support plate 20. Therefore, the gas injection nozzle 530 has to increase the size of the nozzle inlet in order to increase the amount of gas injection when the cooling rate should be fast or the feeding speed of the support plate should be high. To form. The gas injection nozzle 530 is preferably formed to have a width larger than the width of the support plate 20 to uniformly cool the support plate 20 in the width direction. The gas injection nozzle 530 has an upper nozzle 530a and a lower nozzle 530b on one side of the cooling susceptor 510, that is, the side adjacent to the cooling unit 400, based on the upper surface of the cooling susceptor 510. The support plates 20 and the semiconductor elements 10 are spaced apart from each other at a height greater than that. The gas injection nozzle 530 is formed such that the gas injection angles of the upper nozzle 530a and the lower nozzle 530b form a predetermined angle with the conveying direction of the support plate 20, and preferably the conveying direction of the support plate 20. It is formed to achieve an obtuse angle. In addition, the upper nozzle 530a and the lower nozzle 530b may be installed to inject gas at different angles, and the support plate 20 may be installed to cool other positions based on the vertical direction. The gas injected from the gas injection nozzle 530 flows along the surfaces of the support plate 20 and the semiconductor device 10 without disturbing the transport of the support plate 20, thereby allowing the support plate 20 and the semiconductor device 10 to flow. To cool.

The cooling horizontal transfer means 540 transfers the support plate 20 horizontally to the other process from the discharge unit 500. The cooling horizontal conveying means 540 is preferably formed of a roller 540 which is inserted into the cooling roller groove 518 of the cooling susceptor 510 and rotates, and the roller 540 of the supporting plate 20 is conveyed. Considering the size, it is formed at proper intervals. The roller 540 is rotatably supported by a separate supporting means (not shown), and is rotated by a separate driving means (not shown). Therefore, a plurality of the rollers 540 are installed at predetermined intervals in the horizontal direction, and rotates to transport the support plate 20 mounted on the upper portion in the horizontal direction.

On the other hand, the cooling horizontal transfer means 540 may be used in addition to the pneumatic cylinder, ball screw transfer mechanism, etc., but is not limited thereto. When such a transfer mechanism is used as the cooling horizontal transfer means 540, the roller groove 518 does not need to be formed on the upper surface of the cooling susceptor 510.

The upper heating means 550 is formed of a plurality of resistance heaters or lamp heaters, preferably formed of a lamp heater such as an infrared halogen lamp. However, the type of the upper heating means 550 is not limited thereto, and various heating means that do not contaminate the upper surface of the semiconductor device 10 may be used. The upper heating means 550 is formed at a predetermined height on the upper portion of the cooling susceptor 510 and is formed to have an area larger than that of the support plate 20 to be transferred. Therefore, the upper heating means 550 is installed on the upper portion of the semiconductor element 10 to apply heat to the upper surface of the support plate 20 and the semiconductor element 10 as a whole to prevent the upper surface from being cooled quickly. When the support plate 20 and the semiconductor element 10 are transferred to the upper surface of the cooling susceptor 510, in particular, the semiconductor element 10 may be cooled faster than the lower surface because the upper surface is opened to release heat to the atmosphere. In this case, the semiconductor device 10 may be damaged due to the high cooling rate and the temperature difference between the upper and lower surfaces. The upper heating means 550 is controlled to have an appropriate temperature in consideration of the temperature when the support plate 20 and the semiconductor element 10 is transferred from the cooling unit 400. In addition, the upper heating means 550 is formed to have a heat capacity that can maintain the upper surface temperature of the semiconductor device 10 at a temperature of at least 100 ℃ at the initial stage of cooling. The upper heating means 550 is measured by a separate temperature sensing means (not shown) to stop the operation when the temperature of the support plate 20 and the semiconductor element 10 is cooled to 100 ° C or less.

Next, the operation of the heat treatment system of the semiconductor device according to the embodiment of the present invention will be described.

When the susceptor 110 of the charging unit 100 is lifted by the shanghai conveying means 130, the support plate 20 and the semiconductor device 10 is mounted on the upper surface. The support plate 20 and the semiconductor device 10 are preheated to a predetermined temperature by the internal heating means 114 of the susceptor 110, in which the heat insulating groove 116 is formed in the central region of the susceptor 110. As a result, the support plate 20 and the semiconductor device 10 are preheated uniformly as a whole while the heat is differentially conducted to the central region and the outer portion. When the support plate 20 and the semiconductor element 10 are preheated to a predetermined temperature, the susceptor 110 is lowered down by the shanghai conveying means 130, the support plate 20 and the semiconductor element 10 is a roller By the rotation of the 140 is transferred into the heating furnace 210 of the heating unit 200. Each heating furnace 210 of the heating unit 200 is set to a predetermined temperature in each step, thereby heating the support plate 20 and the semiconductor element 10 to be transferred to a predetermined temperature. In this case, the heating unit 200 may set the set temperature of the last heating furnace 210 to the heat treatment temperature so that some heat treatment may be performed in the heating unit 200. The process unit 300 heat-treats the transferred semiconductor device 10 at a predetermined temperature, and transfers the transferred semiconductor device 10 to the cooling unit 400 maintained at a predetermined temperature when the heat treatment is completed. The process unit 1300 selectively heats the amorphous silicon thin film or the metal thin film of the semiconductor device 10 by the operation of the lamp heater 320. In addition, the process unit 300 is the first black body 330 and the second black body 335 is heated by the heating by the lamp heater 320 and the magnetic core 340 and the induction coil 350, the semiconductor The device is heated as a whole, and in particular, the glass substrate and the support plate of the semiconductor device 10 are heated. In addition, the process unit 300 emits infrared rays while the first black body 330 and the second black body 335 intensively heat a predetermined region by induction heating, thereby intensively targeting a specific portion of the semiconductor device 10. Heat to high temperature to allow heat treatment. In the cooling unit 400, each of the heating furnaces 410 is set to a predetermined temperature step by step, respectively, cooling the transferred semiconductor element 10 step by step to cool to a predetermined temperature, and then cooling the cooling unit of the discharge part 500. It is transferred to the upper portion of the acceptor 510. The gas injection nozzle 530 of the discharge part 500 cools the gas by spraying the upper and lower surfaces of the support plate 20 and the semiconductor element 10 transferred from the cooling part 400. When the support plate 20 is transferred to the upper portion of the cooling susceptor 510 by the driving of the roller 540 which is the horizontal cooling means, the cooling susceptor 510 is transferred upward by the cooling up and down conveying means 520. The support plate 20 and the semiconductor element 10 are mounted on the upper surface. At this time, the cooling susceptor 510 is a gas is injected from the injection hole 514 to uniformly cool the support plate 20 and the semiconductor element 10 as a whole. In addition, the upper heating means 550 is applied to the upper surface of the support plate 20 and the semiconductor element 10 to prevent the cooling is suddenly. The discharge part 500 transfers the semiconductor element when the support plate 20 and the semiconductor element 10 transferred to the upper surface of the cooling susceptor 510 are cooled to a predetermined temperature without deformation, for example, 100 ° C. or lower or room temperature. To the next process.

14 is a graph showing process conditions of heat treatment performed in the heat treatment system of the semiconductor device according to the embodiment of the present invention. In FIG. 14, process 1 is a process for removing hydrogen present in the amorphous silicon thin film deposited on the glass substrate or supplying hydrogen into the polysilicon thin film deposited on the glass substrate at a relatively low temperature of about 500 ° C. FIG. Process 2 is performed at about 600 ° C. or more by crystallization of the amorphous silicon thin film formed on the glass substrate, or activation of the dopant formed on the crystalline silicon thin film, MIC, MILC process. Process 3 is a pre-compaction or defect annealing process for glass substrates, which takes place at approximately 700 ° C or above. The above process is an example of a process to which the heat treatment system of the semiconductor device can be applied, and of course, can be applied to more various processes.

In the heat treatment system of the semiconductor device, the support plate 20 and the semiconductor device 10 are preheated to about 200 ° C. in the charging unit 100 when the process conditions of FIG. 14 are performed, and then transferred to the heating unit 200. . The heating unit 200 is heated in three steps to the heat treatment temperature in each heating furnace 210 in accordance with the treatment process to heat the support plate 20 and the semiconductor device 10. The process unit 300 heats and cools the transferred support plate 20 and the semiconductor device 10 to a heat treatment temperature in a short time. Of course, as shown in step 1 of FIG. 14, the process unit 300 may not be required depending on the type of heat treatment. The cooling unit 400 is cooled step by step from the heat treatment temperature to approximately 300 ℃ in each heating furnace (410). The discharge part 500 cools the transferred support plate 20 and the semiconductor device 10 to a temperature close to room temperature. At this time, as mentioned above, the discharge part 400 is provided with cooling means capable of uniformly cooling the support plate 20 and the semiconductor device 10 so that the semiconductor device is uniformly cooled so as not to deform.

Therefore, the heat treatment system of the semiconductor device according to the present invention makes it possible to perform heat treatment of the semiconductor device at approximately 400 ℃ to 1000 ℃. In particular, the heat treatment system of the semiconductor device according to the present invention can more effectively perform a heat treatment requiring a temperature of 600 ° C or more, which is the deformation temperature of the glass substrate.

Next, an application example of a heat treatment system of a semiconductor device according to an exemplary embodiment of the present invention will be described.

<Application Example 1>

Application Example 1 is an example applied to the solid phase crystallization of an amorphous silicon thin film deposited on a glass substrate as a semiconductor device.

First, a glass substrate (trade name: Corning 1737) coated with an amorphous silicon thin film by chemical vapor deposition (Chemical Vapor Deposition) is coalesced with the support plate 20 at the charging unit 100 and preheated to about 200C. The glass substrate and the support plate are transferred to the heating furnace 200 and gradually heated to the process preheating temperature 640C required for the solid phase crystallization of the amorphous silicon thin film. The glass substrate and the support plate are transferred to the process unit 300, and the crystallization process is performed in the instantaneous heating, and the crystallization heat treatment is performed at room temperature through the cooling unit 400 and the discharge unit 500. The heat treatment time of the solid crystallization heat treatment in the process unit 300 may be controlled by the feed rate passing through the process unit 300.

FIG. 15 is a graph illustrating a change in slope of a UV curve indicating a degree of crystallization of an amorphous silicon thin film according to a current of an induction coil. FIG. Figure 12 shows the degree of crystallization of the amorphous silicon thin film according to the current of the induction coil when the glass substrates have the same heat treatment time. In the graph of FIG. 15, the X axis represents the current of the induction coil and the Y axis represents the UV slope. The degree of crystallization of the amorphous silicon thin film by the UV transmittance spectrum (UV transmittance spectrum) is evaluated by the curve slope (UV slope value), where the larger the curve slope means a silicon thin film having a higher quality crystalline. 16A to 16D are graphs illustrating changes in Raman spectra of crystalline silicon thin films when the induced currents of FIG. 15 are 0A, 20A, 30A, and 40A, respectively. In the graphs of FIGS. 16A-16D, the X axis represents Raman Shift, and the Y axis represents intensity. Induction heating by the induction coil in the process unit 300 is controlled by the amount of current applied to the induction coil 350, and as the amount of current increases, the first black body 330 and the second black body 335 due to induction heating. ), The heating temperature is increased to increase the temperature of the glass substrate 10 and the support plate 20. As shown in Figure 12, when no current is applied to the induction coil, the slope of the UV curve is less than 0.2, indicating that no crystallization proceeds. However, when the amount of current applied to the induction coil is increased to 20 A, 30 A, 40 A, that is, as the induction heating increases, the crystallization of the silicon thin film is promoted, and when 40 A current is applied, the UV curve slope becomes 1 or more. You can see that it is almost complete. In addition, as shown in FIGS. 16A to 16D, as the current of the induction coil increases, the peak of the amorphous silicon phase decreases, and the peak of the crystalline silicon phase increases, and when the current is 40A, the degree of crystallization is 95% or more. It can be seen that represents.

<Application Example 2>

Application Example 2 is an example applied to the MILC process of the amorphous silicon thin film deposited on the glass substrate as a semiconductor device.

After depositing an amorphous silicon film on the glass substrate by chemical vapor deposition, a metal element (Ni) was applied to a specific portion of the amorphous silicon film to perform a MILC crystallization process. Here, the MILC crystallization process was performed in the same order as the crystallization process according to Application Example 1, but the preheating temperature of the furnace was 600C, which was lower than the crystallization process temperature. In this case, the process unit 300 controls the current of the halogen lamp of the lamp heater 320 to proceed with the process without deformation of the glass substrate. Figure 5 shows the growth distance of the MILC according to the amount of current applied to the induction coil in the heat treatment time of the same time measured by an optical microscope.

17 is a diagram showing the crystal MILC growth distance according to the current of the induction coil after the MILC crystallization process. As shown in FIG. 17, as the amount of current applied to the induction coil increases, the growth distance of the MILC increases during the same heat treatment time, and when a current of 40 A is applied, the crystalline silicon thin film is faster in the amorphous silicon thin film. It can be seen that it grows at a speed of approximately 3 to 4 um / sec.

<Application Example 3>

Application Example 3 is an example applied to the activation process of the dopant doped in the crystalline silicon thin film.

An amorphous silicon thin film was formed on the glass substrate by chemical vapor deposition and then crystallized into a polycrystalline silicon thin film using an ELC process. After that, a silicon dioxide (SiO 2) layer used as an insulating layer was deposited, and an n-type dopant was doped into the polycrystalline silicon thin film layer using an ion doping apparatus. In this application example, the dopant activation process was performed in the same order as the crystallization process and the MILC crystallization process of Application Examples 1 and 2, but the preheating temperature of the heating furnace was 580 to 620 ° C., which was lower than the crystallization process temperature. At this time, in order to accelerate the dopant activation in the process unit 300, the amount of halogen lamp applied to the process unit was changed from 38% to 50% to proceed with the dopant activation.

18 shows the degree of dopant activation according to the heating temperature and the amount of power of the halogen lamp. The dopant activation degree was compared with the slope of the UV curve indicating the degree of resistance (Rs), which indicates the degree of electrical activation of the dopant, and the degree of healing of the crystals destroyed by the activation process. In the dopant activation process, the accelerated dopant collides with silicon (Si) ions during ion implantation to destroy the crystalline, and the broken crystalline acts as a defect that prevents the dopant from being electrically activated during the dopant activation process. Occurs. Therefore, defects generated in the dopant activation process are healed, and such a degree of healing is also an important factor. As shown in FIG. 18, as the amount of power applied to the halogen lamp increases, the sheet resistance decreases and the slope of the UV curve increases. That is, the decrease in the sheet resistance means that the implanted dopant is activated, and the increase in the slope of the UV curve indicates that the defect generated during the ion implantation is healed, thereby increasing the reliability of the TFT device.

<Application Example 4>

Application Example 4 is an example in which the amorphous silicon thin film deposited on the glass substrate using the support plate was evaluated for the temperature uniformity of the glass substrate during the crystallization process. 19 is a graph showing a temperature change with time at each position of the glass substrate.

In Application Example 4, the temperature uniformity was evaluated in the process of raising the temperature of the glass substrate of 370 x 470mm on which the amorphous silicon thin film was deposited. In order to evaluate the temperature uniformity, thermocouples were attached to each of the four corners and the center of the glass substrate, and the respective temperatures were measured. As shown in FIG. 19, the glass substrate quickly rises from room temperature to 500 ° C. within about 1 minute after being charged, and rises to 640 ° C. after about 4 minutes. In addition, it can be seen that the glass substrate has a very small temperature deviation of 30 ° C. despite the rapid rise rate. In addition, even if the glass substrate is partially deformed due to a small temperature deviation, the support plate is supported so that the deformation disappears at a high temperature.

As described above, the present invention is not limited to the specific preferred embodiments described above, and any person having ordinary skill in the art to which the present invention pertains without departing from the gist of the present invention claimed in the claims. Various modifications are possible, of course, and such changes are within the scope of the claims.

The heat treatment system of the semiconductor device according to the present invention has the effect of preventing the deformation of the semiconductor device while rapidly performing the heat treatment process of the semiconductor device at a higher temperature by using the heating by the lamp heater and the induction heating by the induced electromotive force at the same time. have. In particular, according to the present invention, the crystallization of the amorphous silicon thin film formed on the upper surface of the glass substrate, the dopant activation treatment of the TFT element formed of the polysilicon thin film, the pre-compaction of the glass substrate for forming the semiconductor thin film on the upper surface (pre-compaction) ) The heat treatment can be effected more quickly while preventing the deformation of the glass substrate.

In addition, according to the present invention, since the heat treatment is performed by uniformly heating the substrate while supporting the semiconductor element as a whole, there is an effect of preventing deformation or damage of the glass substrate.

Claims (25)

In the heat treatment system of a semiconductor element for heat-treating the semiconductor element, A charging unit to which the semiconductor element and the support plate on which the semiconductor element is mounted are mounted and transported; A heating unit including at least two heating furnaces each having a holding temperature set in stages up to a predetermined temperature and independently controlled, and heating the semiconductor transferred from the charging unit to the predetermined temperature; A process unit installed in contact with the heating unit to heat the semiconductor element at a predetermined heat treatment temperature by heating by a lamp heater and induction heating by induction electromotive force; A holding temperature is set step by step from the heat treatment temperature to a predetermined cooling temperature, respectively, and includes at least two heating furnaces that are independently controlled. The heat treatment process is performed to cool the semiconductor element transferred from the process unit to a predetermined cooling temperature. Cooling section and And a discharge unit for uniformly cooling and discharging the semiconductor device, which is cooled and conveyed to a predetermined cooling temperature, to a predetermined temperature. The method of claim 1, wherein the process unit An inner housing to form a space in which the semiconductor element is transferred to perform heat treatment; A lamp heater including a plurality of lamps installed in a predetermined area of an upper or lower portion of the inner housing; A first black body formed in a substantially plate shape or a plurality of blocks and installed in an area corresponding to at least the area in which the lamp heater is installed between the inner housing and the lamp heater; Magnetic cores are formed in a substantially block shape and are respectively installed on the upper and lower portions of the inner housing exterior; And an induction coil wound around the magnetic core. The method of claim 2, wherein the process unit And a second black body formed to face the first black body with the semiconductor device interposed therebetween in the inner housing. According to claim 2 or 3, wherein the process unit And a roller installed under the inner housing and supporting and transporting the semiconductor element and the support plate. The method of claim 2 or 3, wherein the process unit And a heat insulating plate formed in a plate shape having an area corresponding to the area of the inner housing and installed between the inner housing and the magnetic core. The method of claim 2 or 3, The lamp heater is a heat treatment system of a semiconductor device, characterized in that formed by a halogen lamp. The method of claim 3, wherein The first black body and the second black body is a heat treatment system of a semiconductor device, characterized in that formed of silicon carbide or silicon carbide coated carbon body. The method of claim 5, And the inner housing and the heat insulating plate are made of quartz. The method of claim 2 or 3, The induction coil is a heat treatment system for a semiconductor device, characterized in that the winding in the induction coil groove formed on the surface facing the inner housing of the magnetic core. The method of claim 2 or 3, The magnetic core is installed to be spaced apart from the insulating plate by a predetermined gap, the heat treatment system of a semiconductor device, characterized in that formed to be cooled by the cooling gas supplied from the outside. The method of claim 2 or 3, The magnetic core is a heat treatment system of a semiconductor device, characterized in that formed of a composite material of iron or ferrite powder and epoxy. The method of claim 1, An inner housing forming a space in which heat treatment of the semiconductor device to be transferred is performed; Lamp heaters installed in a predetermined region in the upper and lower portion of the inner housing; A heating black body which is formed in a substantially plate shape having an area corresponding to at least an area in which the lamp heater is installed, and is respectively installed above and below the lamp heater; Magnetic cores are formed in a block shape and installed on the upper and lower portions of the inner housing exterior; And an induction coil wound around the magnetic core. The method of claim 12, The heating black body is a heat treatment system of a semiconductor device, characterized in that formed of silicon carbide or silicon carbide coated carbon body. The method of claim 1, The semiconductor device is any one of a semiconductor device including an amorphous silicon thin film formed on an organic substrate, a polysilicon thin film formed on a glass substrate, a glass substrate on which the semiconductor element is formed. The method of claim 14, And the semiconductor device is a thin film transistor used in a liquid crystal display or an organic light emitting display device. The method of claim 1, The heat treatment is any one of a solid phase crystallization of the amorphous silicon thin film, metal induction crystallization, metal-induced side crystallization, activation of the ion-injected polysilicon thin film, the heat treatment system of the semiconductor device, characterized in that any one of. The method of claim 1, The heat treatment system is a heat treatment system of a semiconductor device, characterized in that carried out at a temperature between 400 ℃ to 1000 ℃. The method of claim 1, The semiconductor device is a heat treatment system of a semiconductor device, characterized in that seated and transported on a support plate formed of 3mm to 10mm thick quartz. The method of claim 18, And the support plate is formed at least 10 mm wider and longer than the semiconductor device. The method of claim 18, The support plate is a heat treatment system of a semiconductor device, characterized in that at least four detachment holes are formed in the diagonal direction of the area in which the semiconductor device is seated. The method of claim 20, The removal hole is formed in a region within 10mm from each outside of the semiconductor device to be seated, the heat treatment system of a semiconductor device, characterized in that formed in a circular or rectangular shape having a diameter or width smaller than 3mm. In the heat treatment system for heat-treating a semiconductor element, An inner housing forming a space in which heat treatment of the semiconductor device to be transferred is performed; A lamp heater installed in a predetermined area of an upper or lower portion of the inner housing; A first black body formed in a substantially plate shape and installed in an area corresponding to at least the area in which the lamp heater is installed between the inner housing and the lamp heater; Magnetic cores are formed in a block shape and installed on the upper and lower portions of the inner housing exterior; And a process unit including an induction coil wound around the magnetic core. The method of claim 22, wherein the process unit And a second black body formed to face the first black body with the semiconductor device interposed therebetween in the inner housing. The method of claim 22, wherein the process unit And a roller installed under the inner housing and supporting and transporting the semiconductor element and the support plate. The method of claim 22, wherein the process unit And a heat insulating plate formed in a plate shape having an area corresponding to the area of the inner housing and installed between the inner housing and the magnetic core.

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