CN107966026B - Silicon wafer sintering process - Google Patents
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- CN107966026B CN107966026B CN201711215682.8A CN201711215682A CN107966026B CN 107966026 B CN107966026 B CN 107966026B CN 201711215682 A CN201711215682 A CN 201711215682A CN 107966026 B CN107966026 B CN 107966026B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 90
- 239000010703 silicon Substances 0.000 title claims abstract description 90
- 238000005245 sintering Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000001035 drying Methods 0.000 claims abstract description 103
- 235000012431 wafers Nutrition 0.000 claims abstract description 81
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 238000002347 injection Methods 0.000 claims description 30
- 239000007924 injection Substances 0.000 claims description 30
- 238000003860 storage Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000007664 blowing Methods 0.000 claims description 13
- 238000001914 filtration Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a silicon wafer sintering process which can enable a silicon wafer to be temporarily hung and dried and improve the sintering quality. The silicon wafer sintering process adopts a sintering furnace capable of drying silicon wafers in a suspended mode, and comprises the following steps: 1) firstly, conveying the silicon wafer to a drying furnace area through a conveying device; drying and preheating the silicon wafer through a drying furnace area; and the drying temperature in the drying furnace area is 320-380 ℃; 2) sintering the silicon wafer in a sintering furnace area, wherein the air pressure in the sintering furnace area is controlled to be 450-550 Pa, and the sintering temperature is controlled to be 600-850 ℃; 3) and cooling the silicon wafer in the cooling furnace area, and cooling the silicon wafer to room temperature. By adopting the silicon wafer sintering process, the sintering efficiency can be improved, and the sintering quality can be improved.
Description
Technical Field
The invention relates to the field of sintering of solar cells, in particular to a silicon wafer sintering process.
Background
It is well known that: in the whole production process flow of the solar cell, three processes of diffusion, film coating and sintering are the most important, and the solar cell is currently subjected to a co-firing process which only needs one-time sintering; and ohmic contacts of the upper and lower electrodes are formed at the same time.
In the prior art, the sintering process of the solar cell mainly comprises three steps of drying, preheating, sintering and cooling; the equipment for sintering the solar cell slice generally adopts a sintering furnace, and the sintering furnace comprises a drying area, a sintering area and a cooling area.
Sintering is a crucial step for the crystalline silicon substrate to have a photoelectric conversion function. Therefore, the quality of the sintering equipment directly affects the quality of the battery piece.
The drying airflow of the drying furnace area of the existing sintering furnace enters from the middle position of the top of the drying furnace body, then forms two airflows towards two ends, and finally is collected by the lower part of the drying furnace area and then exhaust gas is pumped away through an air exhaust device.
Because the hot air flow rises upwards, the drying air flow in the drying furnace area in the prior art mainly provides power for forming air flow through the exhaust fan, and the air flow reversely flows, so that the energy consumption is high, and the drying efficiency is lower.
Disclosure of Invention
The invention aims to solve the technical problem of providing a silicon wafer sintering process which can enable a silicon wafer to be temporarily hung and dried and improve the sintering quality.
The technical scheme adopted by the invention for solving the technical problems is as follows: the silicon wafer sintering process comprises a drying furnace area, a sintering furnace area, a cooling furnace area and a conveying device, wherein the conveying device sequentially penetrates through the drying furnace area, the sintering furnace area and the cooling furnace area;
the conveying device positioned in the drying furnace area is provided with an air injection device; the conveying device comprises a front driving roller, a rear driving roller and a supporting seat; the driving roller is supported by a supporting seat, a conveying belt is wound on the driving roller, and the conveying belt is a conveying net; the supporting seat is provided with a driving device for driving the driving roller to rotate;
the two sides of the conveying belt are provided with limiting baffles, and the air injection device is positioned below the upper surface of the conveying belt;
the air injection device comprises an air storage cylinder and a cam driving device, the air storage cylinder is provided with an air storage cavity, an air outlet plate is arranged above one end of the air storage cavity, and an air outlet hole is formed in the air outlet plate; the other end is provided with a piston; one end of the piston is provided with a mandril extending out of the air storage cylinder, and a spring is arranged between the other end of the piston and the side wall of the air storage cavity; the air outlet plate is positioned right below the upper surface of the conveying belt;
a cam is arranged at one end of the ejector rod, and the cam, the ejector rod and the piston form a cam mechanism; the cam is driven to rotate by a cam driving device;
the drying furnace zone comprises a furnace body, the furnace body is provided with a drying furnace chamber, and the top of the drying furnace chamber is provided with an air exhaust device communicated with the drying furnace chamber;
an air inlet pipe communicated with the drying furnace chamber is arranged on the side wall of the furnace body, and the air inlet pipe is uniformly distributed on the side surface of the furnace body along the length direction; the air inlet part of the air inlet pipe in the drying oven cavity is positioned above the upper surface of the conveying device, and the other part of the air inlet pipe is positioned below the upper surface of the conveying device;
the air heating and blowing device is arranged at the top of the furnace body, an air outlet of the air heating and blowing device is communicated with the air inlet pipe through a communicating pipeline, and an air inlet of the air heating and blowing device is provided with an air filtering device.
Further comprising the steps of:
1) firstly, conveying the silicon wafer to a drying furnace area through a conveying device; drying and preheating the silicon wafer through a drying furnace area; and the drying temperature in the drying furnace area is 320-380 ℃;
2) sintering the silicon wafer in a sintering furnace area, wherein the air pressure in the sintering furnace area is controlled to be 450-550 Pa, and the sintering temperature is controlled to be 600-850 ℃;
3) and cooling the silicon wafer in the cooling furnace area, and cooling the silicon wafer to room temperature.
Further, in step 1), the drying temperature in the drying oven zone is set to 350 ℃.
Further, the temperature of the silicon wafer entering the drying furnace zone is controlled to be 20-22 ℃ in the step 1).
Further, the air pressure in the sintering furnace zone in the step 2) is 500Pa, and the sintering temperature is 800 ℃.
Further, a filtering device is arranged at an air outlet of the air exhaust device.
Further, the air heating and blowing device comprises an air heater and a blower, an air inlet of the blower is communicated with the air filtering device, the blower is communicated with the air heater, and the air heater is communicated with an air inlet pipe.
The invention has the beneficial effects that: in the silicon wafer sintering process, the sintering furnace capable of drying the silicon wafer in a hanging manner is adopted in the step 1), the air inlet pipe is arranged on the side surface of the furnace body in the drying furnace area of the sintering furnace capable of drying the silicon wafer in a hanging manner, the air inlet part of the air inlet pipe in the drying furnace cavity is positioned above the upper surface of the conveying device, and the other part of the air inlet pipe is positioned below the upper surface of the conveying device; therefore, after hot air enters the furnace body, the silicon wafer on the conveying device is directly dried, and meanwhile, the lower surface of the silicon wafer can be directly dried; secondly, set up air exhaust device at the stoving furnace chamber top, because the hot gas flow rises upwards to make the flow direction of air current natural, the moisture is taken away to the hot gas flow of being convenient for, improves drying efficiency.
Thirdly, because the air injection device 43 is arranged below the conveyor belt in the drying furnace area and the air injection device 43 is driven by the cam mechanism, intermittent air injection of the air injection device 43 can be realized, namely air injection is realized at intervals, and the silicon wafer is blown up by air flow sprayed by the air injection device, so that the silicon wafer is temporarily suspended; so that the position where the lower surface of the silicon wafer contacts the transfer belt 42 can be ensured to be dried.
Therefore, the silicon wafer sintering process can optimize the drying airflow and improve the drying efficiency. Meanwhile, the silicon wafer can be temporarily hung for drying, so that the lower surface of the silicon wafer is dried conveniently, the drying efficiency is improved, and the drying effect is ensured.
Drawings
FIG. 1 is a flow chart of a silicon wafer sintering process in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a sintering furnace for drying silicon wafers in a suspended manner according to an embodiment of the present invention;
FIG. 3 is a schematic structural view of a drying oven zone in an embodiment of the present invention;
FIG. 4 is a schematic side view of a drying oven zone according to an embodiment of the present invention;
FIG. 5 is a schematic view of the structure of a transfer device according to an embodiment of the present invention;
FIG. 6 is a top view of a conveyor in an embodiment of the invention;
FIG. 7 is a schematic structural view of an air injection device according to an embodiment of the present invention;
FIG. 8 is a schematic view of the structure of a conveyor belt in an embodiment of the invention;
the following are marked in the figure: 1-drying furnace area, 11-furnace body, 12-air inlet pipe, 13-air heating blower device, 14-air filter device, 15-air extractor device, 16-filter device, 17-connecting pipeline, 2-sintering furnace area, 3-cooling furnace area, 4-conveying device, 41-driving roller, 42-conveying belt, 43-air injector device, 431-air cylinder, 432-air storage cavity, 433-piston, 434-spring, 435-ejector rod, 436-cam, 437-air outlet plate, 44-limit baffle, 45-driving device, 46-first limit switch, 47-second limit switch and 48-supporting seat.
Detailed Description
The invention is further illustrated with reference to the following figures and examples.
As shown in fig. 1 to 8, the silicon wafer sintering process of the present invention employs a sintering furnace in which silicon wafers can be suspended for drying; the sintering furnace capable of drying the silicon wafer in a suspended mode comprises a drying furnace area 1, a sintering furnace area 2, a cooling furnace area 3 and a conveying device 4, wherein the conveying device 4 penetrates through the drying furnace area 1, the sintering furnace area 2 and the cooling furnace area 3 in sequence;
the air injection device 43 is arranged on the conveying device 4 positioned in the drying furnace area 1; the conveying device 4 comprises a front driving roller 41 and a rear driving roller 41 and a supporting seat; the driving roller 41 is supported by a supporting seat 48, a conveying belt 42 is wound on the driving roller 41, and the conveying belt 42 is a conveying net; the supporting seat 48 is provided with a driving device 5 for driving the driving roller 41 to rotate;
the two sides of the conveyor belt 42 are provided with limit baffles 44, and the air injection device 43 is positioned below the upper surface of the conveyor belt 42;
the air injection device 43 comprises an air storage cylinder 431 and a cam driving device, wherein the air storage cylinder 431 is provided with an air storage cavity 432, an air outlet plate 437 is arranged above one end of the air storage cavity 432, and an air outlet hole is formed in the air outlet plate 437; the other end is provided with a piston 433; one end of the piston 433 is provided with a mandril 435 extending out of the air storage cylinder 431, and a spring 434 is arranged between the other end of the piston and the side wall of the air storage cavity 432; the gas outlet plate 437 is positioned right below the upper surface of the conveyor belt 42;
one end of the push rod 435 is provided with a cam 436, and the cam 436, the push rod 435 and the piston 433 form a cam mechanism; the cam 436 is driven to rotate by a cam driving device;
the drying furnace zone 1 comprises a furnace body 11, the furnace body 11 is provided with a drying furnace chamber, and the top of the drying furnace chamber is provided with an air exhaust device 15 communicated with the drying furnace chamber;
an air inlet pipe 12 communicated with the drying furnace chamber is arranged on the side wall of the furnace body 11, and the air inlet pipe 12 is uniformly distributed on the side surface of the furnace body 11 along the length direction; the air inlet part of the air inlet pipe 12 in the drying oven cavity is positioned above the upper surface of the conveying device 4, and the other part of the air inlet pipe is positioned below the upper surface of the conveying device 4;
an air heating and blowing device 13 is arranged at the top of the furnace body 11, an air outlet of the air heating and blowing device 13 is communicated with the air inlet pipe 12 through a communication pipeline 17, and an air inlet of the air heating and blowing device 13 is provided with an air filtering device 14;
further comprising the steps of:
1) firstly, silicon wafers are conveyed to a drying furnace area 1 through a conveying device 4; drying and preheating the silicon wafer through the drying furnace zone 1; and the drying temperature in the drying furnace zone 1 is 320-380 ℃;
2) sintering the silicon wafer in a sintering furnace area 2, controlling the air pressure in the sintering furnace area 2 to be 450-550 Pa, and controlling the sintering temperature to be 600-850 ℃;
3) the silicon wafer is cooled in the cooling furnace zone 3 and cooled to room temperature.
The specific process for drying and preheating the silicon wafer in the step 1) is as follows:
the air enters the air heating and blowing device 13 after being filtered by the air filtering device 14, so that the air is purified, heated and pressurized; then the heated air is guided into an air inlet pipe 12 through a communication pipeline 17 and enters the drying oven cavity through the air inlet pipe 12, and because the air inlet part of the air inlet pipe 12 in the drying oven cavity is positioned above the upper surface of the conveying device 4, the other part of the air inlet pipe is positioned below the upper surface of the conveying device 4; thereby directly drying the silicon wafers on the conveying device after the hot air enters the furnace body. Meanwhile, partial airflow is divided by the silicon chip to flow to the lower surface of the silicon chip, so that the lower surface of the silicon chip is directly dried. Finally, the airflow is pumped away by an air extractor 15 at the top, thereby realizing the drying of the silicon wafer.
Because the air injection device 43 is arranged below the conveying device 4, in the process of drying the silicon wafer, the driving device 45 is started to enable the transmission belt 42 to rotate and then to drive the silicon wafer on the transmission belt 42 to move, when the silicon wafer moves below the air injection device 43, the cam driving device drives the cam to rotate, the cam enables the ejector rod to rapidly move the piston in the air storage cavity 432, and therefore air in the air storage cavity 432 is pressurized and then is ejected out of the air outlet hole in the air outlet plate 437; the silicon wafers on the conveyor belt 42 are blown up, so that the silicon wafers are temporarily suspended, and meanwhile, the lower surfaces of the silicon wafers can be dried through air flow.
Sintering the silicon wafer in the sintering furnace area 2 in the step 2), and controlling the air pressure in the sintering furnace area 2 to be 450-550 Pa and the sintering temperature to be 600-850 ℃; thereby heating the electrode metal material and the semiconductor monocrystalline silicon to reach eutectic temperature, and dissolving monocrystalline silicon atoms into the molten alloy electrode material in a certain proportion. The entire process of dissolution of the monocrystalline silicon atoms into the electrode metal is relatively fast, typically only a few seconds. The number of atoms of the single crystal silicon dissolved in depends on the alloy temperature and the volume of the electrode material, and the higher the sintering alloy temperature, the larger the volume of the electrode metal material, the larger the number of atoms of silicon dissolved in, and this state is called an alloy system of the crystalline electrode metal.
If the temperature is reduced, the system begins to cool to form a recrystallized layer, at which point the silicon atoms originally incorporated in the electrode metal material recrystallize in solid form, i.e. an epitaxial layer grows at the interface between the metal and the crystal.
Thus setting the wind pressure in the sintering furnace zone 2 to 450 to 550Pa and the sintering temperature to 600 to 850 ℃ so as to obtain the formation of ohmic contact by the alloying process when the epitaxial layer contains a sufficient amount of impurity components having the same conductivity type as the original crystal material; when the crystallization layer contains a sufficient amount of impurity components having a conductivity type profile different from that of the original crystal material, the formation of p.n junctions by the alloying process is obtained.
Cooling the silicon wafer to room temperature in step 3), thereby completing sintering of the silicon wafer.
More specifically, the drying temperature in the drying oven zone 1 is brought to 350 ℃ in step 1). Controlling the temperature of the silicon chip entering the drying furnace zone 1 to be 20-22 ℃ in the step 1). In the step 2), the air pressure in the sintering furnace zone 2 is 500Pa, and the sintering temperature is 800 ℃.
In summary, in the silicon wafer sintering process of the present invention, the sintering furnace capable of drying the silicon wafer in suspension is adopted in step 1), the air inlet pipe is arranged at the side surface of the furnace body in the drying furnace area of the sintering furnace capable of drying the silicon wafer in suspension, and the air inlet part of the air inlet pipe in the drying furnace cavity is located above the upper surface of the conveying device, and the other part is located below the upper surface of the conveying device; therefore, after hot air enters the furnace body, the silicon wafer on the conveying device is directly dried, and meanwhile, the lower surface of the silicon wafer can be directly dried; secondly, set up air exhaust device at the stoving furnace chamber top, because the hot gas flow rises upwards to make the flow direction of air current natural, the moisture is taken away to the hot gas flow of being convenient for, improves drying efficiency.
Thirdly, because the air injection device 43 is arranged below the conveyor belt in the drying furnace area and the air injection device 43 is driven by the cam mechanism, intermittent air injection of the air injection device 43 can be realized, namely air injection is realized at intervals, and the silicon wafer is blown up by air flow sprayed by the air injection device, so that the silicon wafer is temporarily suspended; so that the position where the lower surface of the silicon wafer contacts the transfer belt 42 can be ensured to be dried.
Therefore, the silicon wafer sintering process can optimize the drying airflow and improve the drying efficiency. Meanwhile, the silicon wafer can be temporarily hung for drying, so that the lower surface of the silicon wafer is dried conveniently, the drying efficiency is improved, and the drying effect is ensured.
In order to avoid pollution of the environment by the exhaust gas, the air outlet of the air extractor 15 is further provided with a filter device 16.
In order to make the air flow into the drying oven body 1 have a large air pressure, further, the air heating and blowing device 13 includes an air heater and a blower, an air inlet of the blower is communicated with the air filtering device 14, the blower is communicated with the air heater, and the air heater is communicated with the air inlet pipe 12.
Specifically, the air extracting device 15 adopts an exhaust fan.
For the convenience of control, specifically, the driving device 45 and the cam driving device both use motors.
In order to facilitate the control of the silicon wafer to reach the position above the air injection device 43, air injection is realized, and further, a first limit switch 46 and a second limit switch 47 are arranged on the limit baffle 44 of the conveyor belt 42, and the air injection device 43 is located between the first limit switch 46 and the second limit switch 47. When the silicon wafer passes through the first limit switch 46, the air injection device is started, and when the silicon wafer moves to leave the second limit switch 47, the air injection device 43 is braked, so that the air injection device 43 can blow the silicon wafer every time.
In order to ensure that the silicon wafer is blown horizontally, further, the area of the upper surface of the gas outlet plate 437 is larger than that of the lower surface of the silicon wafer.
In order to reduce the manufacturing cost, it is preferable that the conveyor belt 42 is formed by connecting the wire buckles 421.
Claims (6)
1. The silicon chip sintering process is characterized in that a sintering furnace is adopted, and the silicon chip can be hung in the air for drying; the sintering furnace capable of drying the silicon wafer in a suspended mode comprises a drying furnace area (1), a sintering furnace area (2), a cooling furnace area (3) and a conveying device (4), wherein the conveying device (4) penetrates through the drying furnace area (1), the sintering furnace area (2) and the cooling furnace area (3) in sequence;
the method is characterized in that: an air injection device (43) is arranged on the conveying device (4) positioned in the drying furnace area (1); the conveying device (4) comprises a front driving roller (41) and a rear driving roller (41) and a supporting seat; the driving roller (41) is supported by a supporting seat (48), a conveying belt (42) is wound on the driving roller (41), and the conveying belt (42) is a conveying net; the supporting seat (48) is provided with a driving device (5) for driving the driving roller (41) to rotate;
limiting baffles (44) are arranged on two sides of the conveyor belt (42), and the air injection device (43) is positioned below the upper surface of the conveyor belt (42);
the air injection device (43) comprises an air storage cylinder (431) and a cam driving device, wherein the air storage cylinder (431) is provided with an air storage cavity (432), an air outlet plate (437) is arranged above one end of the air storage cavity (432), and an air outlet hole is formed in the air outlet plate (437); the other end is provided with a piston (433); one end of the piston (433) is provided with a mandril (435) extending out of the air storage cylinder (431), and a spring (434) is arranged between the other end of the piston and the side wall of the air storage cavity (432); the air outlet plate (437) is positioned right below the upper surface of the conveyor belt (42);
one end of the ejector rod (435) is provided with a cam (436), and the cam (436), the ejector rod (435) and the piston (433) form a cam mechanism; the cam (436) is driven to rotate by a cam driving device;
the drying furnace area (1) comprises a furnace body (11), the furnace body (11) is provided with a drying furnace chamber, and the top of the drying furnace chamber is provided with an air exhaust device (15) communicated with the drying furnace chamber;
an air inlet pipe (12) communicated with the drying furnace chamber is arranged on the side wall of the furnace body (11), and the air inlet pipe (12) is uniformly distributed on the side surface of the furnace body (11) along the length direction; the air inlet part of the air inlet pipe (12) in the drying oven cavity is positioned above the upper surface of the conveying device (4), and the other part of the air inlet pipe is positioned below the upper surface of the conveying device (4);
an air heating and blowing device (13) is arranged at the top of the furnace body (11), an air outlet of the air heating and blowing device (13) is communicated with the air inlet pipe (12) through a communicating pipeline (17), and an air filtering device (14) is arranged at an air inlet of the air heating and blowing device (13);
further comprising the steps of:
1) firstly, silicon wafers are conveyed to a drying furnace area (1) through a conveying device (4); drying and preheating the silicon wafer through a drying furnace area (1); and the drying temperature in the drying furnace area (1) is 320-380 ℃;
2) sintering the silicon wafer in the sintering furnace area (2), controlling the air pressure in the sintering furnace area (2) to be 450-550 Pa, and controlling the sintering temperature to be 600-850 ℃;
3) cooling the silicon wafer in the cooling furnace zone (3) and cooling the silicon wafer to room temperature.
2. The process for sintering a silicon wafer according to claim 1, wherein: in step 1), the drying temperature in the drying oven zone (1) is brought to 350 ℃.
3. The process for sintering a silicon wafer according to claim 2, wherein: controlling the temperature of the silicon chip entering the drying furnace zone (1) to be 20-22 ℃ in the step 1).
4. The process for sintering a silicon wafer according to claim 3, wherein: in the step 2), the air pressure in the sintering furnace area (2) is 500Pa, and the sintering temperature is 800 ℃.
5. The process for sintering a silicon wafer according to claim 1, wherein: and a filtering device (16) is arranged at an air outlet of the air extracting device (15).
6. The process for sintering a silicon wafer according to claim 5, wherein: the air heating and blowing device (13) comprises an air heater and a blower, an air inlet of the blower is communicated with the air filtering device (14), the blower is communicated with the air heater, and the air heater is communicated with the air inlet pipe (12).
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| CN201711215682.8A CN107966026B (en) | 2017-11-28 | 2017-11-28 | Silicon wafer sintering process |
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| SG73538A1 (en) * | 1997-08-04 | 2000-06-20 | Matsushita Electric Ind Co Ltd | Method of heat treating object and apparatus for the same |
| KR101015597B1 (en) * | 2004-05-12 | 2011-02-17 | 주식회사 비아트론 | Apparatus for Heat Treatment of Semiconductor device |
| JP2011075132A (en) * | 2009-09-29 | 2011-04-14 | Kazuhiro Utano | Continuous baking furnace for solar battery |
| TWI467660B (en) * | 2011-03-14 | 2015-01-01 | Screen Holdings Co Ltd | Heat treatment method and heat treatment device |
| CN206116442U (en) * | 2016-10-31 | 2017-04-19 | 嘉兴金瑞光伏科技有限公司 | Continuous through type solar wafer diffusion equipment |
| CN206276524U (en) * | 2016-11-15 | 2017-06-27 | 惠州市联达金电子有限公司 | A kind of gas-liquid mixing ejector |
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