CN104091857A - Low-pressure variable-temperature diffusion method of nanometer textured polycrystalline silicon solar cell - Google Patents
Low-pressure variable-temperature diffusion method of nanometer textured polycrystalline silicon solar cell Download PDFInfo
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- CN104091857A CN104091857A CN201410315105.6A CN201410315105A CN104091857A CN 104091857 A CN104091857 A CN 104091857A CN 201410315105 A CN201410315105 A CN 201410315105A CN 104091857 A CN104091857 A CN 104091857A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 60
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 abstract 7
- 238000001816 cooling Methods 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a low-pressure variable-temperature diffusion method of a nanometer textured polycrystalline silicon solar cell, and relates to the technical field of solar cells. The low-pressure variable-temperature diffusion method comprises the steps of cleaning of silicon wafers, vacuumizing, temperature rising, power on, cooling and wafer discharging. The pressure of diffusion gas keeps 0.001-0.8 Pa, the diffusion temperature range is from 600 to 950 degrees, the silicon wafers used are p-type silicon wafers and n type silicon wafers. Low-pressure diffusion and variable-temperature diffusion are combined, the problem of uneven diffusion of the nanometer textured silicon wafers is resolved, molecular movement of a diffusion source is accelerated under a low-pressure condition, an impurity source in a diffusion cavity is distributed evenly, the partial concentration difference on the surfaces of the silicon wafers is small, and an even diffusion environment is created. Meanwhile, inside a nanometer textured structure, the diffusion length of a gas source is large, the response time is short, and it is represented that similar diffusion source atmosphere exists within a certain period of time.
Description
Technical field:
The present invention relates to the technical field of solar cell, be specifically related to a kind of nanometer matte polysilicon solar cell low pressure alternating temperature method of diffusion.
Background technology:
The polysilicon solar cell with nanometer suede structure can significantly improve the absorption of sunlight, thereby improves the conversion efficiency of battery.Such as adopting the nanometer matte that the produced polysilicon front surface of plasma etching technology is exactly a kind of efficient light trapping structure.
Because nanometer matte has along y direction of principal axis the inhomogeneities that physical size distributes, cause phosphorus in the process of phosphorus diffusion pn knot processed to distribute very inhomogeneous, such as compared with the silicon chip of common strong acid lithographic technique, exist lightly doped problem under upper heavy doping, reduced the collection rate of photo-generated carrier.By analysis, at nanometer shape matte tip, after diffusion, the concentration of phosphorus is higher, and nanostructure bottom section phosphorus diffusion concentration is on the low side, and for solar cell, the difference that this diffusion concentration is large will cause the compound raising of photo-generated carrier.
Under normal temperature diffusion conditions, due to diffuse source skewness, so cause local diffusion source to have larger concentration difference, cause the sheet resistance difference of the silicon chip zones of different after diffusion large.The particularly silicon chip of nanometer suede structure, due to the existence of surface micro-structure, increases this inhomogeneities, because the exchange of the gas under nanoscale and diffusion are all difficult, so diffused sheet resistance changes greatly.
For the diffusion of gas phase phosphorus, the nanometer shape matte in perimeter, due to three-dimensional diffusion model, causes the concentration of donor impurity phosphorus high, need to improve diffusion technique and impel phosphorus in whole nanostructure, to have identical CONCENTRATION DISTRIBUTION.
Summary of the invention:
The object of this invention is to provide a kind of nanometer matte polysilicon solar cell low pressure alternating temperature method of diffusion, it adopts low pressure diffusion, in conjunction with alternating temperature diffusion, has solved nanometer matte silicon chip and has spread inhomogeneous problem.
In order to solve the existing problem of background technology, the present invention is by the following technical solutions: its low pressure alternating temperature method of diffusion is: cleaning silicon wafer-vacuumizing-intensification-TongYuan-cooling-slice; Wherein diffusion gas pressure remains on 0.001～0.8 atmospheric pressure, and diffusion temperature scope is 600-950 degree, and using silicon chip can be p-type silicon chip, N-shaped silicon chip.
Concrete operation step of the present invention is: (1) is clean by Wafer Cleaning, and the silicon chip cleaning after drying is positioned in diffusion furnace; (2) be first evacuated to 0.001～0.8 atmospheric pressure, start the body of ventilating, holding chamber internal gas pressure is constant; (3) start heater, set 10 degrees/min of programming rates, to 500～850 degree; (4) logical phosphorus source, 15～20 minutes diffusion times, is warming up to 600～950 degree, keeps 15～25 minutes; (5) in oxygen atmosphere, lower the temperature; (6) slice.
The present invention adopts low pressure diffusion, spread in conjunction with alternating temperature, solve nanometer matte silicon chip and spread inhomogeneous problem, under low pressure condition, diffuse source molecular motion is accelerated, the impurity source showing as in diffusion chamber is evenly distributed, little in the local concentration difference of the diverse location of silicon chip surface, is conducive to form an evenly environment for diffusion.In the inside of nanometer suede structure, the diffusion length of gas source is large simultaneously, and the response time is short, shows as within a certain period of time and has similar diffuse source atmosphere.
Embodiment:
This embodiment is by the following technical solutions: its low pressure alternating temperature method of diffusion is: cleaning silicon wafer-vacuumizing-intensification-TongYuan-cooling-slice; Wherein diffusion gas pressure remains on 0.001～0.8 atmospheric pressure, and diffusion temperature scope is 600-950 degree, and using silicon chip can be p-type silicon chip, N-shaped silicon chip.
The concrete operation step of this embodiment is: (1) is clean by Wafer Cleaning, and the silicon chip cleaning after drying is positioned in diffusion furnace; (2) be first evacuated to 0.001～0.8 atmospheric pressure, start the body of ventilating, holding chamber internal gas pressure is constant; (3) start heater, set 10 degrees/min of programming rates, to 500～850 degree; (4) logical phosphorus source, 15～20 minutes diffusion times, is warming up to 600～950 degree, keeps 15～25 minutes; (5) in oxygen atmosphere, lower the temperature; (6) slice.
This embodiment adopts low pressure diffusion, spread in conjunction with alternating temperature, solve nanometer matte silicon chip and spread inhomogeneous problem, under low pressure condition, diffuse source molecular motion is accelerated, the impurity source showing as in diffusion chamber is evenly distributed, little in the local concentration difference of silicon chip surface, is conducive to create an evenly environment for diffusion.Simultaneously in the inside of nanometer suede structure, the diffusion length people of gas source, the response time is short, shows as within a certain period of time and has similar diffuse source atmosphere.
Embodiment:
Embodiment mono-: the silicon chip cleaning after drying is positioned in diffusion furnace, is first evacuated to below 0.3 atmospheric pressure, start the body of ventilating, holding chamber internal gas pressure is 0.3 atmospheric pressure.Start heater, set 10 degrees/min of programming rates, to 800 degree, logical phosphorus source, 16 minutes diffusion times, is warming up to 830 degree, keeps 20 minutes, in oxygen atmosphere, lower the temperature, and slice.
Embodiment bis-: the silicon chip cleaning after drying is positioned in diffusion furnace, is first evacuated to below 0.01 atmospheric pressure, start the body of ventilating, holding chamber internal gas pressure is 0.01 atmospheric pressure.Start heater, set 10 degrees/min of programming rates, to 800 degree, logical phosphorus source, 16 minutes diffusion times, is warming up to 835 degree, keeps slow cooling in oxygen atmosphere, slice 18 minutes.
Embodiment tri-: the silicon chip cleaning after drying is positioned in diffusion furnace, is first evacuated to below 0.1 atmospheric pressure, start the body of ventilating, holding chamber internal gas pressure is 0.1 atmospheric pressure.Start heater, set 10 degrees/min of programming rates, to 790 degree, logical phosphorus source, 19 minutes diffusion times, is warming up to 830 degree, keeps 20 minutes, in oxygen atmosphere, lower the temperature, and slice.
Claims (2)
1. a nanometer matte polysilicon solar cell low pressure alternating temperature method of diffusion, is characterized in that its low pressure alternating temperature method of diffusion is: cleaning silicon wafer-vacuumizing-intensification-TongYuan-cooling-slice; Wherein diffusion gas pressure remains on 0.001～0.8 atmospheric pressure, and diffusion temperature scope is 600-950 degree, and use silicon chip is p-type silicon chip, N-shaped silicon chip.
2. a nanometer matte polysilicon solar cell low pressure alternating temperature method of diffusion, is characterized in that its concrete operation step is: (1) is clean by Wafer Cleaning, and the silicon chip cleaning after drying is positioned in diffusion furnace; (2) be first evacuated to 0.001～0.8 atmospheric pressure, start the body of ventilating, holding chamber internal gas pressure is constant; (3) start heater, set 10 degrees/min of programming rates, to 500～850 degree; (4) logical phosphorus source, 15～20 minutes diffusion times, is warming up to 600～950 degree, keeps 15～25 minutes; (5) in oxygen atmosphere, lower the temperature; (6) slice.
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| CN201410315105.6A CN104091857A (en) | 2014-06-30 | 2014-06-30 | Low-pressure variable-temperature diffusion method of nanometer textured polycrystalline silicon solar cell |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105070782A (en) * | 2015-06-19 | 2015-11-18 | 浙江宝利特新能源股份有限公司 | Low-pressure diffusion technique in solar cell silicon wafer production process |
| CN108110088A (en) * | 2017-12-21 | 2018-06-01 | 苏州阿特斯阳光电力科技有限公司 | The low pressure diffusion technique of solar cell and the solar cell being prepared using it |
| CN108598216A (en) * | 2018-04-25 | 2018-09-28 | 通威太阳能（合肥）有限公司 | Temperature and pressure changing diffusion process for improving photoelectric conversion efficiency |
| CN109308996A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A kind of negative pressure diffusion technique of silicon wafer |
| CN110518091A (en) * | 2019-08-12 | 2019-11-29 | 阜宁苏民绿色能源科技有限公司 | Oxygen technique after a kind of boron expands |
| CN112670367A (en) * | 2019-10-15 | 2021-04-16 | 浙江爱旭太阳能科技有限公司 | PERC solar cell and preparation method thereof |
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| CN101567407A (en) * | 2009-06-03 | 2009-10-28 | 武汉华工正源光子技术有限公司 | Graded zinc diffusing method based on MOCVD (Metal-Organic Chemical Vapor Deposition) system for producing chip of indium-gallium-arsenic photoelectric detector |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105070782A (en) * | 2015-06-19 | 2015-11-18 | 浙江宝利特新能源股份有限公司 | Low-pressure diffusion technique in solar cell silicon wafer production process |
| CN109308996A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A kind of negative pressure diffusion technique of silicon wafer |
| CN108110088A (en) * | 2017-12-21 | 2018-06-01 | 苏州阿特斯阳光电力科技有限公司 | The low pressure diffusion technique of solar cell and the solar cell being prepared using it |
| CN108110088B (en) * | 2017-12-21 | 2020-11-10 | 苏州阿特斯阳光电力科技有限公司 | Low-voltage diffusion process of solar cell and solar cell prepared by using low-voltage diffusion process |
| CN108598216A (en) * | 2018-04-25 | 2018-09-28 | 通威太阳能（合肥）有限公司 | Temperature and pressure changing diffusion process for improving photoelectric conversion efficiency |
| CN108598216B (en) * | 2018-04-25 | 2019-07-26 | 通威太阳能（合肥）有限公司 | Temperature and pressure changing diffusion process for improving photoelectric conversion efficiency |
| CN110518091A (en) * | 2019-08-12 | 2019-11-29 | 阜宁苏民绿色能源科技有限公司 | Oxygen technique after a kind of boron expands |
| CN112670367A (en) * | 2019-10-15 | 2021-04-16 | 浙江爱旭太阳能科技有限公司 | PERC solar cell and preparation method thereof |
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Application publication date: 20141008 |