CN110518091A - Oxygen technique after a kind of boron expands - Google Patents
Oxygen technique after a kind of boron expands Download PDFInfo
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- CN110518091A CN110518091A CN201910738935.2A CN201910738935A CN110518091A CN 110518091 A CN110518091 A CN 110518091A CN 201910738935 A CN201910738935 A CN 201910738935A CN 110518091 A CN110518091 A CN 110518091A
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 239000001301 oxygen Substances 0.000 title claims abstract description 77
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 77
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000009792 diffusion process Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 172
- 229910052757 nitrogen Inorganic materials 0.000 claims description 86
- 238000001816 cooling Methods 0.000 claims description 12
- 238000013021 overheating Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000005086 pumping Methods 0.000 claims description 3
- 230000000994 depressogenic effect Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 230000001737 promoting effect Effects 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
Oxygen technique after expanding the invention discloses a kind of boron, comprising the following steps: by silicon wafer as being taken out after preparations in diffusion furnace, boron diffusional deposition, propulsion, oxidation, the back pressure that cools down.Boron diffusional deposition is aoxidized again after promoting, and reduces emitter region concentration, reduces the compound of minority carrier, and then promoted and open pressure, short stream；There is knot effect during being passed through rear oxygen, further increase PN junction depth, increase Effective Doping concentration, pressure is opened in promotion, final to promote cell piece transfer efficiency.
Description
Technical field
The invention belongs to solar-energy photo-voltaic cell manufacturing technology fields, and in particular to oxygen technique after a kind of boron expands.
Background technique
In N-type cell manufacturing process, needs to carry out boron diffusion in battery front side, forms the primary structure PN junction of battery,
The structure of PN junction directly affects battery conversion efficiency.Traditional handicraft connects because of the limitation of positive silver paste in order to form preferable ohm
Touching, boron expands process requirement heavy doping diffusion, and high doping concentration makes the compound based on auger recombination of emitter region, greatly drops
Low minority carrier life time, influences battery efficiency.Slurry currently on the market has largely been suitble to low surface doping, therefore new boron expands
Technique is urgently studied, and realizes low doping concentration, while increasing PN junction depth, increases Effective Doping concentration, is turned to promote battery
Change efficiency.
Summary of the invention
Oxygen technique after expanding the present invention provides a kind of boron, solves the low technical problem of above-mentioned battery conversion efficiency.
In order to solve the above-mentioned technical problem, the technical scheme adopted by the invention is that: oxygen technique after a kind of boron expands, feature
It is, comprising the following steps:
S1, the silicon wafer after cleaning and texturing is placed in diffusion furnace, carries out taking out pressure, heating in furnace, is passed through the big of certain flow
Nitrogen；
Persistently overheating in furnace after the completion of S2, pumping pressure, temperature rises to boron diffusional deposition desired temperature, leads in temperature-rise period
Small nitrogen, the dry oxygen and big nitrogen for entering certain flow carry out boron diffusional deposition to the silicon wafer；
S3, furnace pressure is increased, stops being passed through for small nitrogen and dry oxygen, continues to be passed through big nitrogen, in-furnace temperature is risen into propulsion
Desired temperature is promoted；
S4, stop being passed through for small nitrogen and big nitrogen, the in-furnace temperature is risen to oxidizing temperature by persistently overheating, be passed through dry oxygen into
Row oxidation；
S5, cooling, back pressure take out the silicon wafer out of described diffusion furnace.
Preferably, in the step S1, big nitrogen flow is 3000~5000sccm；In-furnace temperature rises to 830 DEG C~880
℃；It is taken out in furnace and is depressed into 25~75mbar.
Preferably, in the step S2, desired temperature is 880~930 DEG C；The small nitrogen flow be 110~
150sccm, dry oxygen flow are 250~400sccm；Big nitrogen flow is 250~350sccm.
Preferably, in the step S3, big nitrogen flow is 8000~10000sccm；Desired temperature is 1000~1010
℃。
Preferably, in the step S4, oxidizing temperature is 1000~1010 DEG C；Dry oxygen flow is 8~10slm.
Preferably, in the step S5, cooling and when back pressure big nitrogen are continually fed into, and big nitrogen flow when cooling is 3000~
5000sccm, big nitrogen flow when back pressure are 8000~10000sccm.
Preferably, the dry oxygen includes big oxygen and small oxygen, and big oxygen and small oxygen are not passed through the diffusion through two flowmeters
In furnace.
Preferably, the dry oxygen in the step S2 is small oxygen；Dry oxygen in the step S4 is big oxygen.
Preferably, the small nitrogen carries boron source.
Preferably, in the step S2, TongYuan's time is 15~20min；In the step S3, promote the time be 10~
15min；In the step S4, the time for being passed through dry oxygen is 20~25min.
Advantageous effects of the invention: being aoxidized again after boron diffusional deposition, emitter region concentration is reduced, is reduced few
The compound of carrier is counted, and then is promoted and opens pressure, short stream；There is knot effect during being passed through rear oxygen, further increase PN junction
Junction depth increases Effective Doping concentration, and pressure is opened in promotion, final to promote cell piece transfer efficiency.
Specific embodiment
The invention will be further described below.Following embodiment is only used for clearly illustrating technical side of the invention
Case, and not intended to limit the protection scope of the present invention.
Oxygen technique after a kind of boron expands, comprising the following steps:
S1, the silicon wafer after cleaning and texturing is placed in diffusion furnace, carries out taking out pressure, heating in furnace, is passed through the big of certain flow
Nitrogen.
Persistently overheating in furnace after the completion of S2, pumping pressure, temperature rises to boron diffusional deposition desired temperature, leads in temperature-rise period
Small nitrogen, the dry oxygen and big nitrogen for entering certain flow carry out boron diffusional deposition to the silicon wafer.
S3, furnace pressure is increased, stops being passed through for small nitrogen and dry oxygen, continues to be passed through big nitrogen, in-furnace temperature is risen into propulsion
Desired temperature is promoted.
S4, stop being passed through for small nitrogen and big nitrogen, the in-furnace temperature is risen to oxidizing temperature by persistently overheating, be passed through dry oxygen into
Row oxidation.
S5, cooling, back pressure take out the silicon wafer out of described diffusion furnace.
Embodiment one:
Step 1: the standby temperature in diffusion furnace is 800 DEG C, the silicon wafer after cleaning and texturing is placed in diffusion furnace, is carried out
Pressure, heating are taken out in furnace, is passed through the big nitrogen of certain flow, and big nitrogen flow is 4000sccm.Taking out the pressure time is 420s, is evacuated to furnace internal pressure
Power is 25mbar.In-furnace temperature rises to 850 DEG C.
Step 2: persistently overheating in furnace, temperature is set as boron diffusional deposition desired temperature 905 after the completion of taking out pressure, heating
DEG C, TongYuan's time is 1200s, is passed through small nitrogen, the dry oxygen and big nitrogen of certain flow, carries out boron diffusional deposition to silicon wafer.Small nitrogen stream
Amount is 130sccm, and dry oxygen flow is 300sccm, and big nitrogen flow is 320sccm.Furnace pressure is 25mbar at this time.
Step 3: furnace pressure is upgraded to 950mbar, stops being passed through for small nitrogen and dry oxygen, continue to be passed through big nitrogen, big nitrogen stream
Amount is 10000sccm, and in-furnace temperature is risen to 1005 DEG C of desired temperature of propulsion and is promoted, and the propulsion time is 600s.
Step 4: stopping being passed through for small nitrogen and big nitrogen, in-furnace temperature is risen to 1005 DEG C by persistently overheating, is passed through dry oxygen and is carried out
Oxidation, dry oxygen flow are 10slm.Furnace pressure is 950mbar at this time.
Step 5: cooling makes in-furnace temperature be down to 800 DEG C, stop being passed through for small nitrogen and dry oxygen, big nitrogen flow is
5000sccm, furnace pressure 950mbar.Back pressure, back pressure time are 300s, and in-furnace temperature is 800 DEG C, small nitrogen and dry oxygen flow
For 0sccm, big nitrogen flow is 10000sccm, furnace pressure 1060mbar.Cooling, after the completion of back pressure, by silicon wafer from diffusion furnace
Interior taking-up.
Embodiment two:
Step 1: the standby temperature in diffusion furnace is 800 DEG C, the silicon wafer after cleaning and texturing is placed in diffusion furnace, is carried out
Pressure, heating are taken out in furnace, is passed through the big nitrogen of certain flow, and big nitrogen flow is 3500sccm.Taking out the pressure time is 410s, is evacuated to furnace internal pressure
Power is 30mbar.In-furnace temperature rises to 870 DEG C.
Step 2: persistently overheating in furnace, temperature is set as boron diffusional deposition desired temperature 920 after the completion of taking out pressure, heating
DEG C, TongYuan's time is 1200s, is passed through small nitrogen, the dry oxygen and big nitrogen of certain flow, carries out boron diffusional deposition to silicon wafer.Small nitrogen stream
Amount is 120sccm, and dry oxygen flow is 380sccm, and big nitrogen flow is 300sccm.Furnace pressure is 30mbar at this time.
Step 3: furnace pressure is upgraded to 950mbar, stops being passed through for small nitrogen and dry oxygen, continue to be passed through big nitrogen, big nitrogen stream
Amount is 9000sccm, and in-furnace temperature is risen to 1008 DEG C of desired temperature of propulsion and is promoted, and the propulsion time is 600s.
Step 4: stopping being passed through for small nitrogen and big nitrogen, in-furnace temperature is risen to 1010 DEG C by persistently overheating, is passed through dry oxygen and is carried out
Oxidation, dry oxygen flow are 8slm.Furnace pressure is 950mbar at this time.
Step 5: cooling makes in-furnace temperature be down to 800 DEG C, stop being passed through for small nitrogen and dry oxygen, big nitrogen flow is
4000sccm, furnace pressure 950mbar.Back pressure, back pressure time are 300s, and in-furnace temperature is 800 DEG C, small nitrogen and dry oxygen flow
For 0sccm, big nitrogen flow is 8500sccm, furnace pressure 1060mbar.Cooling, after the completion of back pressure, by silicon wafer from diffusion furnace
Interior taking-up.
Diffusion technique is to be doped processing to crystalline silicon in diffusion furnace, in real work, the specific steps are as follows: (1)
Into boat；(2) pressure is taken out；(3) it heats up；(4) TongYuan；(5) it heats up；(6) it aoxidizes；(7) cool down；(8) back pressure；(9) go out boat.
Wherein, the technological parameter of step (1) setting is as follows:
It is 500s into the boat time, in-furnace temperature is 800 DEG C, and small nitrogen and dry oxygen flow are 0sccm, and big nitrogen flow is
1000sccm；
The technological parameter of step (2) setting is as follows:
Taking out the pressure time is 420s, and in-furnace temperature is 850 DEG C, and small nitrogen, dry oxygen and big nitrogen flow are 0sccm, and furnace pressure is
25mbar；
The technological parameter of step (3) setting is as follows:
Heating-up time is 1000s, and in-furnace temperature is 850 DEG C, and small nitrogen and dry oxygen flow are 0sccm, and big nitrogen flow is
4000sccm, furnace pressure 100mbar；
The technological parameter of step (4) setting is as follows:
TongYuan's time is 1200s, and in-furnace temperature is 905 DEG C, and small nitrogen flow is 130sccm, and dry oxygen flow is 300sccm,
Big nitrogen flow is 320sccm, furnace pressure 25mbar；
The technological parameter of step (5) setting is as follows:
Heating-up time is 600s, and in-furnace temperature is 1005 DEG C, and small nitrogen and dry oxygen flow are 0sccm, and big nitrogen flow is
10000sccm, furnace pressure 950mbar；
The technological parameter of step (6) setting is as follows:
Oxidization time is 1500s, and in-furnace temperature is 1005 DEG C, and small nitrogen and big nitrogen flow are 0sccm, and dry oxygen flow is
10000sccm, furnace pressure 950mbar；
The technological parameter of step (7) setting is as follows:
Temperature fall time is 3000s, and in-furnace temperature is 800 DEG C, and small nitrogen and dry oxygen flow are 0sccm, and big nitrogen flow is
5000sccm, furnace pressure 950mbar；
The technological parameter of step (8) setting is as follows:
The back pressure time is 300s, and in-furnace temperature is 800 DEG C, and small nitrogen and dry oxygen flow are 0sccm, and big nitrogen flow is
10000sccm, furnace pressure 1060mbar；
The technological parameter of step (9) setting is as follows:
The boat time is 600s out, and in-furnace temperature is 800 DEG C, and small nitrogen and dry oxygen flow are 0sccm, and big nitrogen flow is
1000sccm, furnace pressure 1060mbar；
Above-mentioned specific steps numerical value is referring to such as the following table 1:
| Step name | Time | Warm area 1 | Warm area 2 | Warm area 3 | Warm area 4 | Warm area 5 | Big nitrogen | Oxygen | Small nitrogen | Pressure |
| Into boat | 500 | 800 | 800 | 800 | 800 | 800 | 1000 | 0 | 0 | 1060 |
| Take out pressure | 420 | 850 | 850 | 850 | 850 | 850 | 0 | 0 | 0 | 25 |
| Heating | 1000 | 850 | 850 | 850 | 850 | 850 | 4000 | 0 | 0 | 25 |
| TongYuan | 1200 | 905 | 905 | 905 | 905 | 905 | 320 | 300 | 130 | 25 |
| Heating | 600 | 1005 | 1005 | 1005 | 1005 | 1005 | 10000 | 0 | 0 | 950 |
| Oxidation | 1500 | 1005 | 1005 | 1005 | 1005 | 1005 | 0 | 10000 | 0 | 950 |
| Cooling | 3000 | 800 | 800 | 800 | 800 | 800 | 5000 | 0 | 0 | 950 |
| Back pressure | 300 | 800 | 800 | 800 | 800 | 800 | 10000 | 0 | 0 | 1060 |
| Boat out | 600 | 800 | 800 | 800 | 800 | 800 | 1000 | 0 | 0 | 1060 |
Table 2:
| Uoc | Isc | FF | Eta | Rs | Rp | QTY | |
| Original process | 0.6525 | 9.792 | 80.60 | 21.06 | 0.00177 | 365 | 139086 |
| Present invention process | 0.6576 | 9.856 | 80.52 | 21.37 | 0.00191 | 1315 | 169602 |
| Difference | 0.0051 | 0.064 | -0.08 | 0.31 | 0.00014 | 950 | 30516 |
As shown in Table 2, in the identical situation of other conditions, oxygen technique after diffusion is expanded using boron of the invention, battery turns
Change the promotion that efficiency has 0.31% compared with traditional original process.
Boron diffusional deposition is aoxidized again after promoting, due to solid concentration of the boron in silica be higher than it is solid dense in silicon
Degree, therefore will lead to the boron impurity in emitter in oxidation process in the concentration reduction on surface, to reduce minority carrier
It is compound, and then promoted open pressure, short stream；There is knot effect during being passed through rear oxygen, further increase PN junction depth, increase
Pressure is opened in Effective Doping concentration, promotion, final to promote cell piece transfer efficiency.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (10)
- Oxygen technique after 1. a kind of boron expands, which comprises the following steps:S1, the silicon wafer after cleaning and texturing is placed in diffusion furnace, carries out taking out pressure, heating in furnace, is passed through the big nitrogen of certain flow；After the completion of S2, pumping pressure, persistently overheating in furnace, temperature rises to boron diffusional deposition desired temperature, is passed through one in temperature-rise period The small nitrogen of constant flow, dry oxygen and big nitrogen carry out boron diffusional deposition to the silicon wafer；S3, furnace pressure is increased, stops being passed through for small nitrogen and dry oxygen, continues to be passed through big nitrogen, in-furnace temperature is risen into propulsion temperature Setting value is promoted；S4, stop being passed through for small nitrogen and big nitrogen, the in-furnace temperature is risen to oxidizing temperature by persistently overheating, constant temperature be passed through dry oxygen into Row oxidation；S5, cooling, back pressure take out the silicon wafer out of described diffusion furnace.
- Oxygen technique after 2. a kind of boron according to claim 1 expands, which is characterized in that in the step S1, big nitrogen flow is 3000~5000sccm；In-furnace temperature rises to 830 DEG C ~ 880 DEG C；It is taken out in furnace and is depressed into 25 ~ 75mbar.
- Oxygen technique after 3. a kind of boron according to claim 1 expands, which is characterized in that in the step S2, desired temperature It is 880 ~ 930 DEG C；The small nitrogen flow is 110 ~ 150sccm, dry oxygen flow is 250 ~ 400sccm；Big nitrogen flow is 250 ~ 350sccm。
- Oxygen technique after 4. a kind of boron according to claim 1 expands, which is characterized in that in the step S3, big nitrogen flow is 8000~10000sccm；Desired temperature is 1000 ~ 1010 DEG C；900 ~ 950mbar of furnace pressure.
- Oxygen technique after 5. a kind of boron according to claim 1 expands, which is characterized in that in the step S4, oxidizing temperature is 1000~1010℃；Dry oxygen flow is 8 ~ 10slm.
- Oxygen technique after 6. a kind of boron according to claim 1 expands, which is characterized in that in the step S5, cooling and back pressure When big nitrogen be continually fed into, big nitrogen flow when cooling is 3000 ~ 5000sccm, big nitrogen flow when back pressure is 8000 ~ 10000sccm。
- Oxygen technique after 7. a kind of boron according to claim 1 expands, which is characterized in that the dry oxygen includes big oxygen and small oxygen, Big oxygen and small oxygen are not passed through in the diffusion furnace through two flowmeters.
- Oxygen technique after 8. a kind of boron according to claim 7 expands, which is characterized in that the dry oxygen in the step S2 is small Oxygen；Dry oxygen in the step S4 is big oxygen.
- Oxygen technique after 9. a kind of boron according to claim 1 expands, which is characterized in that the small nitrogen carries boron source.
- Oxygen technique after 10. a kind of boron according to claim 1 expands, which is characterized in that in the step S2, TongYuan is at the time 15~20min；In the step S3, the propulsion time is 10 ~ 15min；In the step S4, be passed through dry oxygen time be 20 ~ 25min。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111628043A (en) * | 2020-04-14 | 2020-09-04 | 横店集团东磁股份有限公司 | Novel diffusion process suitable for superposition of SE (selective emitter current) of PERC (Positive emitter resistance) battery |
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| CN105070782A (en) * | 2015-06-19 | 2015-11-18 | 浙江宝利特新能源股份有限公司 | Low-pressure diffusion technique in solar cell silicon wafer production process |
| CN105304753A (en) * | 2015-09-25 | 2016-02-03 | 中国电子科技集团公司第四十八研究所 | N-type cell boron diffusion technology |
| CN109309142A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | Liquid source diffusion process before silicon wafer glass passivation |
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| CN111628043A (en) * | 2020-04-14 | 2020-09-04 | 横店集团东磁股份有限公司 | Novel diffusion process suitable for superposition of SE (selective emitter current) of PERC (Positive emitter resistance) battery |
| CN111628043B (en) * | 2020-04-14 | 2022-03-25 | 横店集团东磁股份有限公司 | Diffusion process suitable for superposition of SE (selective emitter) of PERC (Positive emitter-negative) battery |
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