KR101015594B1 - Heat Treatment Apparatus of Semiconductor Device - Google Patents

Abstract

The present invention relates to a heat treatment apparatus for a semiconductor element capable of heat treatment of a semiconductor element formed on the flat panel display substrate without deformation of the substrate having a poor thermal stability, the heat treatment apparatus of the semiconductor element of the present invention A charging unit to which a transport support plate for transporting a substrate on which a semiconductor element is formed is supplied; A heating unit for heating the semiconductor element to a predetermined temperature; A process unit performing a heat treatment process of the semiconductor device; A cooling unit cooling the semiconductor device on which the heat treatment process is performed to a predetermined temperature; And a discharge part for discharging a transport support plate for transporting the substrate on which the semiconductor element on which the heat treatment process is performed is discharged, each part being connected to an in-line device for performing a heat treatment process, wherein the heating part, The process unit and the cooling unit is made of a furnace (furnace) capable of heating, the furnace is a body portion constituting the body of the furnace; A roller for transporting the transport support plate in the body portion; It is mounted to the side of the body portion, and comprises a furnace having a first sensor and a second sensor for recognizing the position of the transport support plate.

Semiconductor element, heat treatment device, sensor

Description

Heat Treatment Apparatus of Semiconductor Device

1 is a view for explaining a heat treatment apparatus of a semiconductor device according to an embodiment of the present invention.

Figure 2a is a perspective view for explaining a furnace (furnace) used in the heat treatment apparatus according to an embodiment of the present invention.

Figure 2b is a perspective view of the lower body of the furnace (furnace) used in the heat treatment apparatus according to an embodiment of the present invention.

Figure 2c is a cross-sectional perspective view of a furnace (furnace) used in the heat treatment apparatus according to an embodiment of the present invention.

(Explanation of symbols for main parts of drawing)

100; Charge 200; Heating

300; Process unit 400; Cooling section

500; Outlet 600; Furnace

610; Body 610A; Upper body

610B; Lower body 611A, 611B; Outer housing

612A, 612B; Insulation 613A, 613B; Conduction plate

614A, 614B; Heating means 615A, 615B; Inner housing

620; Rollers 630, 635; sensor

S; Substrate S '; Transport support plate

The present invention relates to a heat treatment apparatus for a semiconductor element, and more particularly, to a heat treatment apparatus for a semiconductor element capable of heat treatment of a semiconductor element formed on the substrate for a flat panel display without deformation of a substrate having a poor thermal stability. It is about.

In particular, in the heat treatment apparatus of the semiconductor device of the present invention, amorphous silicon formed on the substrate for a flat panel display can be crystallized without deformation of the substrate for the flat panel display.

As a next-generation display device that can replace the CRT, flat panel displays such as liquid crystal displays (LCDs) and organic light emitting devices (OLEDs) have been developed.

The liquid crystal display and the organic light emitting display are classified into a passive matrix type and an active matrix type according to the driving method.

The passive matrix type flat panel display device has a simple structure and a simple manufacturing method. However, it is difficult to increase the power consumption and the large area of the display device, and the opening ratio decreases as the number of wirings increases.

Therefore, the pass matrix flat panel display device is used for small or simple display elements, while the active matrix flat panel display device is used for high definition, large area display devices.

Such an active matrix flat panel display device is generally driven using a thin film transistor (TFT) formed on a transparent insulating substrate such as glass.

The thin film transistor is typically formed with an active layer made of amorphous silicon (a-Si).

However, the thin film transistor including the active layer made of amorphous silicon has a problem in that the resistance of the active layer is increased due to the amorphous silicon, thereby lowering driving efficiency. This causes problems such as an increase in power consumption of an active matrix flat panel display device using a thin film transistor.

In order to solve the above problems, a method of applying polysilicon (Poly Silicon, Poly-Si) to the active layer of the thin film transistor has recently been introduced.

The polysilicon is generally formed through the deposition of amorphous silicon on a glass substrate and then through a laser crystallization method using a high energy laser or a crystallization method using a heat treatment in a high temperature furnace.

Among the crystallization methods, the laser crystallization method utilizes a principle in which amorphous silicon is irradiated with a high energy laser to instantaneously melt the amorphous silicon, and the melted silicon is cooled and crystallized. As the laser crystallization method, methods such as ELC (Eximer Laser Crystallization) and SLS (Sequential Lateral Solidification) are mainly applied.

However, the method using the laser has a problem in that time and space unevenness due to expensive equipment investment and instability of the laser and streaking defects due to the laser are generated. In addition, there is a limit to mass production due to the use of a laser.

In addition, the crystallization method using heat treatment of the crystallization method uses the principle that the glass substrate on which the amorphous silicon is deposited is crystallized by rearranging silicon atoms by heat treatment at a high temperature. As the crystallization method using the heat treatment, SPC (Solid Phase Crystallization), MIC (Metal Induced Crystallization) and MILC (Metal Induced Lateral Crystallization) are mainly applied.

However, the method using the heat treatment requires a heat treatment process in a furnace for a long time in order to crystallize amorphous silicon, thereby causing a problem that the glass substrate for a temperature-sensitive flat panel display device is damaged. In particular, in the case of the SPC method, since the heat treatment for several hours to several tens of hours at a temperature of 600 ℃ or more serious damage to the glass substrate.

The cause of deformation of such a glass substrate is as follows.

When the glass substrate is subjected to a high temperature heat treatment of 600 ° C. or more for a long time, the flowability of the glass substrate is increased, and the mechanical strength becomes very weak. At this time, when the stress (for example, high temperature self-weight) acting on the glass substrate is uneven, deformation of the glass substrate occurs due to flow. Such deformation at high temperature is plastic deformation and is not restored even after cooling to room temperature.

In addition, deformation may occur due to thermal unevenness of the glass substrate due to a difference in cooling rate during cooling of the glass substrate.

On the other hand, in the thin film transistor using the polysilicon, in addition to the above-described crystallization process, an impurity activation process is additionally required.

In general, in thin film transistors, in order to form n-type (or p-type) regions such as source and drain regions, arsenic, phosphorus, or boron may be formed using ion implantation or plasma doping. The same impurity is implanted into the silicon film. Then, the impurities are activated by a laser or heat treatment method.

The activation process of such impurities is performed by laser or heat treatment similarly to the crystallization method. Excimer Laser Anneals (ELA) and Rapid Thermal Anneals (RTA) have been developed for this purpose.

The ELA is implemented with the same processing mechanism as the ELC, which rapidly remelts and crystallizes the polycrystalline silicon with a nano-second laser pulse. However, problems found in the ELC method also appear here. That is, the ELA causes problems such as streaking defects, thereby deteriorating the reliability of the device and limiting mass production.

In addition, the RTA method requires a high temperature but a short duration. That is, the RTA method is usually carried out at temperatures close to 600-1000 ° C., but the process proceeds relatively very quickly, ie for several seconds to several minutes. As the RTA heating source, an optical heating source such as tungsten-halogen or Xe arc lamp is used. The light irradiated from the optical heating source by such an RTA method has a wavelength range for heating not only the silicon film but also the glass substrate, and is heated to the glass substrate during the heat treatment step. However, the glass substrate is low in heating efficiency and difficult to maintain temperature uniformity, so that the glass substrate is unevenly heated during the heat treatment process using the RTA, thereby causing a local deformation. Therefore, the glass substrate is damaged during the heat treatment process.

In addition, in-line heat treatment equipment of the heat treatment equipment using a furnace (furnace) that is commonly used is impossible to recognize the position of the glass substrate in the furnace (furnace) during the heat treatment process. This may result in part of the glass substrate being out of acceptable temperature deviations in the event of an alignment error of the glass substrate in the furnace. Accordingly, a part of the glass substrate may be deformed due to a difference in thermal expansion, or a problem may occur in that the crystallization of amorphous silicon on the glass substrate is partially uneven.

An object of the present invention is to solve the above problems of the prior art, the present invention is a semiconductor device capable of heat treatment of the semiconductor element formed on the flat panel display substrate without deformation of the substrate for the flat panel display device is weak thermal stability Its purpose is to provide a heat treatment apparatus.

A heat treatment apparatus for a semiconductor device according to the present invention for achieving the above object includes a charging unit to which a transport support plate for transporting a substrate on which a semiconductor device for heat treatment is formed is supplied; A heating unit for heating the semiconductor element to a predetermined temperature; A process unit performing a heat treatment process of the semiconductor device; A cooling unit cooling the semiconductor device on which the heat treatment process is performed to a predetermined temperature; And a discharge part for discharging a transport support plate for transporting the substrate on which the semiconductor element on which the heat treatment process is performed is discharged, each part being connected to an in-line device for performing a heat treatment process, wherein the heating part, The process unit and the cooling unit is composed of a furnace (furnace) capable of heating, the furnace is a body portion constituting the body of the furnace; A roller for transporting the transport support plate in the body portion; It is mounted to the side of the body portion, and comprises a furnace having a first sensor and a second sensor for recognizing the position of the transport support plate.

An interval between the first sensor and the second sensor may be smaller than a length of a transport support plate for transporting the substrate on which the semiconductor element is formed. Preferably, an interval between the first sensor and the second sensor is formed. It may be from 80% to 90% of the length of the transport support plate carrying the substrate.

An interval between the first sensor and the second sensor may be greater than a length of the substrate on which the semiconductor element is formed, and preferably, an interval between the first sensor and the second sensor is transported to transport the substrate on which the semiconductor element is formed. It may be 110% to 120% of the length of the support plate.

The body portion and the outer housing constituting the body of the furnace; A heat insulating material attached along an inner wall of the outer housing; A conducting plate for uniform heating in the furnace; A heating element interposed between the insulation and the conducting plate; It may comprise an inner housing defining a space for heat treatment in the interior of the furnace.

The heating means is preferably any one of a resistance heater, a lamp heater and an induction coil.

The inner housing may be made of quartz.

The conductive plate may be made of a predetermined metal plate.

The roller may be made of quartz.

The body portion preferably has a plurality of roller insertion holes into which the roller is inserted, and a sensor mounting hole into which the sensor is mounted.

The heating unit is composed of at least one furnace, and the furnace at the rear end of the transfer direction of the substrate on which the semiconductor element is formed is preferably higher in temperature than the furnace at the front end of the transfer direction.

The cooling unit is composed of at least one furnace, and the furnace at the end of the transfer direction of the substrate on which the semiconductor element is formed is preferably lower in temperature than the furnace at the tip of the transfer direction.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

Like reference numerals in the drawings denote like elements.

1 is a view for explaining a heat treatment apparatus of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 1, a heat treatment apparatus of a semiconductor device according to an exemplary embodiment of the present disclosure may include an in-line apparatus in which a series of apparatuses are connected to enable a continuous process.

In more detail, the heat treatment apparatus of a semiconductor device according to an exemplary embodiment of the present invention includes a charging unit 100, a heating unit 200, a process unit 300, a cooling unit 400, and a discharge unit 500. It is made of a structure.

The charging unit 100 is a portion for supplying a semiconductor device for performing a heat treatment process, the semiconductor device used in the heat treatment apparatus of the semiconductor device according to an embodiment of the present invention, for example, a glass substrate or a plastic substrate It may be a thin film transistor or amorphous silicon formed on a flat panel display substrate. Alternatively, the device may be a device such as a transistor or a PN diode formed on a silicon substrate. In addition, the charging unit 100 may have a function of preheating to a predetermined temperature in order to prevent thermal damage due to a sudden temperature change of the semiconductor device and the substrate.

The heating unit 200 may include at least one furnace, for example, three furnaces 210, 220, 230, as shown in the drawing. The heating part 300 is a part for preheating the semiconductor device and the substrate transferred through the charging part 100 before transferring to the processing part 300, and includes at least one furnace. In addition, the heating unit 200 is preferably controlled in a lower temperature range than the process unit 300. In addition, it is preferable that the temperature of the furnace is uniformly controlled in the interior thereof, and in particular, the temperature of the portion where the semiconductor device is positioned for heat treatment is controlled uniformly.

The process unit 300 is a portion for performing a heat treatment process by heating the semiconductor element preheated and transferred by the heating unit 200 to a predetermined process temperature.

In this case, when the semiconductor element is amorphous silicon formed on the flat panel display substrate, the process unit 300 is heated to a predetermined temperature range required for the crystallization process. For example, it can heat to 400 degreeC-900 degreeC which is the temperature range of crystallization by heat processing.

Alternatively, when the semiconductor device is a device such as a thin film transistor formed on the substrate for a flat panel display, a transistor formed on a silicon substrate, or a PN diode, the process unit 300 may activate a doped impurity. Heat to the temperature range of.

Like the heating unit 200, the cooling unit 400 may include at least one furnace, for example, three furnaces 410, 420, 430 as shown in the drawing. The cooling unit 400 is a portion for lowering the semiconductor device and the substrate to a predetermined temperature before transferring the semiconductor device and the substrate subjected to the heat treatment in the process unit 300 to the discharge unit 500. .

The discharge part 500 cools the semiconductor device and the substrate transferred from the cooling part 400 to room temperature, and discharges it to the outside.

The heat treatment apparatus as described above operates as follows, and describes an example of amorphous silicon formed on a substrate for a flat panel display as a semiconductor element for heat treatment. That is, the crystallization of the amorphous silicon will be described by way of example.

First, the substrate for a flat panel display device on which the amorphous silicon is formed is supplied through the charging unit 100 and transferred to the heating unit 200. In this case, the charging unit 100 and the heating unit 200 are heated to a predetermined temperature to prevent thermal damage of the substrate for the flat panel display device on which the amorphous silicon is formed due to a rapid temperature change during the heat treatment process.

In addition, when the heating unit 200 is composed of a plurality of furnaces, for example, three furnaces 210, 220, and 230 as shown in the drawing, the front end of the transfer direction of the substrate for a flat panel display device on which the amorphous silicon is formed The temperature of the furnace at the end of the feeding direction is controlled higher than that of. This is to prevent the thermal damage of the substrate for the flat panel display on which the amorphous silicon is formed by preheating the substrate for the flat panel display on which the amorphous silicon is formed to increase in temperature step by step.

When the heating unit 200 preheats the substrate for the flat panel display on which the amorphous silicon is formed, the substrate for the flat panel display preheated by the heating unit 200 is transferred to the processing unit 300.

When the substrate for the flat panel display on which the amorphous silicon is formed is transferred to the process unit 300, a heat treatment process is performed in the process unit. That is, the process unit 300 is to perform the crystallization process of the amorphous silicon, for example, SPC, MIC, MILC process.

After performing the heat treatment process, the flat panel display substrate is transferred to the cooling unit 400 and cooled to a predetermined temperature. This is a process of discharging the substrate for the flat panel display to the outside through the discharge unit 500, similarly to preheating the substrate for the flat panel display in the heating unit 200 to prevent thermal damage to the glass substrate. This is to prevent thermal damage of the substrate for a flat panel display device due to a rapid temperature change at.

In addition, when the cooling unit 400 is composed of a plurality of furnaces, for example, three furnaces 410, 420, and 430 as shown in the drawing, the furnace after the transfer direction of the substrate for the flat panel display device is a transfer direction. The temperature is lower than that of the furnace. This is to prevent the thermal damage of the substrate for the flat panel display more efficiently by cooling the substrate for the flat panel display so that the temperature decreases in stages.

After cooling the substrate for the flat panel display device cooled through the cooling unit 400, the substrate for the flat panel display device is transferred to the discharge unit 500 to complete a heat treatment process, that is, a crystallization process.

On the other hand, Figure 2a is a perspective view for explaining the furnace (furnace) used in the heat treatment apparatus according to an embodiment of the present invention, Figure 2b is a furnace (furnace) used in the heat treatment apparatus according to an embodiment of the present invention 2 is a cross-sectional perspective view of a furnace used in a heat treatment apparatus according to an embodiment of the present invention.

2A to 2C, a furnace 600 used in a heat treatment apparatus according to an embodiment of the present invention includes a body part 610 constituting a body of the furnace 600 and the body part ( A roller 620 for transferring the semiconductor elements within the 610, and a first sensor 630 and a second sensor 635 for recognizing the position of the semiconductor element is formed. In this case, the semiconductor device may be, for example, a thin film transistor or amorphous silicon formed on a substrate S for a flat panel display device such as a glass substrate or a plastic substrate. Alternatively, the device may be a device such as a transistor or a PN diode formed on a silicon substrate. In addition, the substrate S for the flat panel display device is introduced into the furnace 600 through the roller 620 in a state in which the flat panel display device S is seated on a predetermined support plate, and is heated and discharged. This is to prevent deformation due to sagging during the transfer and heat treatment process because the substrate S for the flat panel display is generally vulnerable to heat.

The body portion 610 includes an upper body 610A and a lower body 610B. The upper body 610A and the lower body 610B have outer housings 611A and 611B constituting the body of the furnace 600, and heat insulating materials 612A and 612B attached along inner walls of the outer housings 611A and 611B, respectively. ) And a conductive plate 613A and 613B formed of a predetermined metal plate for uniform heating in the furnace 600, and interposed between the heat insulating materials 612A and 612B and the conductive plates 613A and 613B. Heating means (614A, 614B, heating element) and the inner housing (615A, 615B) defining a space for heat treatment in the furnace 600.

In addition, the side of the body portion 610 is formed with a plurality of roller insertion holes 616 into which the roller 620 is inserted, and a sensor mounting hole 617 on which the sensor 630 is mounted.

In addition, the heating means 614A, 614B may be any one of a resistance heater and a lamp heater applied in a general heat treatment furnace.

Alternatively, when the furnace 600 is a furnace 600 used in the process unit 300 of the heat treatment apparatus according to an embodiment of the present invention, the heating means 614A and 614B may be formed of an induction coil. The conductive plates 613A and 613B may be omitted. That is, induction coils, which are the heating means 614A and 614B, are positioned above, below, or side surfaces of the furnace 600 to heat the semiconductor element for heat treatment through an induction heating method. In more detail, the semiconductor device is heated by a heating mechanism of eddy currents formed on the surface of the semiconductor device by alternating magnetic fields from the induction coil.

In addition, the inner housing 615 is generally made of quartz (Quartz) to define a heat treatment space in the interior of the furnace 600, to prevent contamination inside the furnace 600.

The roller 620 transfers the transport support plate S 'on which the substrate S for the flat panel display device on which the semiconductor element is formed is mounted, into the furnace 600, through the rotational movement, and also after the heat treatment process. The transport support plate S 'on which the display device substrate S is mounted is discharged to the outside of the furnace 600. In addition, the roller 620 is preferably made of quartz to prevent contamination in the furnace 600.

The first sensor 630 and the second sensor 635 transport the semiconductor device mounted on the transport support plate S ′, in particular, the substrate S for the flat panel display device on which amorphous silicon or thin film transistors are formed. To recognize the position of the transport support plate (S ') to be mounted on the sensor mounting hole 617 of the side of the body portion 610. In addition, the first sensor 630 and the second sensor 635 may be formed of a transmissive laser sensor or a reflective laser sensor.

In this case, the distance between the first sensor 630 and the second sensor 635 may be smaller than the length of the transport support plate S 'for transporting the substrate S for the flat panel display device on which the amorphous silicon or thin film transistor is formed. . Preferably, the distance between the first sensor 630 and the second sensor 635 is 80% of the length of the transport support plate S 'for transporting the substrate S for the flat panel display device on which the amorphous silicon or thin film transistor is formed. To 90%.

In this case, sensing the presence of a transport support plate S 'carrying the substrate S for the flat panel display device on which the amorphous silicon or the thin film transistor is formed in both the first sensor 630 and the second sensor 635. In this case, the substrate S for forming the amorphous silicon or the thin film transistor is positioned within a uniform range of the heat treatment temperature in the furnace 600.

In addition, the distance between the first sensor 630 and the second sensor 635 may be greater than the length of the transport support plate (S ') for transporting the glass substrate or the plastic substrate on which the amorphous silicon or thin film transistor is formed. Preferably, the distance between the first sensor 630 and the second sensor 635 is 110% to 120% of the length of the transport support plate S 'for transporting the glass substrate or the plastic substrate on which the amorphous silicon or thin film transistor is formed. Can be.

In this case, first, the transport support plate S 'for transporting the substrate S for the flat panel display device on which the amorphous silicon or the thin film transistor is formed is introduced into the furnace 600, and the transport support plate is transferred from the first sensor 630. Detects the inflow of S ', and the transport support plate S' is positioned between the first sensor 630 and the second sensor 635 so that the first sensor 630 and the second sensor 635 are located. When it is impossible to detect the presence of the transport support plate S 'carrying the flat panel display substrate S on which the amorphous silicon or thin film transistor is formed, the flat panel display substrate S on which the amorphous silicon or thin film transistor is formed The furnace 600 is located within a uniform range of the heat treatment temperature. In particular, as described above, when the distance between the first sensor 630 and the second sensor 635 is larger than that of the flat panel display substrate S on which the amorphous silicon or thin film transistor is formed. It can be detected as alignment defect until the board | substrate S arrange | positions a predetermined angle in a conveyance direction.

On the other hand, although not shown in the drawings, when the transmission type laser sensor is used as the first sensor 630 and the second sensor 635, the first sensor 630 and the second sensor 635 generally emit light. And a light receiving unit, wherein the light emitting unit and the light receiving unit are disposed on opposite sides of the furnace 600, respectively, and the substrate for a flat panel display device determines whether the laser irradiated from the light emitting unit reaches the light receiving unit. Determine the presence or absence of S).

In addition, when the reflective laser sensor is used as the first sensor 630 and the second sensor 635, the first sensor 630 and the second sensor 635 generally include a sensor unit and a reflecting plate. The sensor unit and the reflector are disposed on opposite sides of the furnace 600, respectively. In addition, the sensor unit includes a light emitting unit and a light receiving unit. The reflective laser sensor may be formed by a difference between a reflection sensitivity of the laser emitted from the light emitting unit through the reflecting plate and reaching the light receiving unit, and a reflection sensitivity reflected by the transport support plate S ′ and reaching the light receiving unit. The presence or absence of the transportation support plate S 'which carries the board | substrate S for flat panel display devices is judged.

The furnace 600 used in the heat treatment apparatus in one embodiment of the present invention as described above operates as follows. An example of an amorphous silicon or a thin film transistor formed on a flat panel display substrate S as a semiconductor element for heat treatment will be described.

First, the heat treatment space inside the furnace 600 defined by the inner housings 615A, 615B is heated by the heating means 614A, 614B.

Meanwhile, the transport support plate S 'on which the substrate S for the flat panel display device on which the amorphous silicon or the thin film transistor is formed is transported through the roller 620 into the furnace 600.

At this time, the amorphous silicon or the first sensor 630 and the second sensor 635 by the first sensor 630 in the direction in which the substrate (S) for the flat display device on which the amorphous silicon or the thin film transistor is formed. The transport support plate S ′ on which the substrate S for a flat panel display device on which the thin film transistor is formed is mounted is detected to flow into the furnace 600.

The transport support plate S 'on which the substrate S for the flat panel display device on which the amorphous silicon or the thin film transistor is formed is continuously transported, and thus the transport support plate (using the first sensor 630 and the second sensor 635) It is confirmed whether S ') is aligned with the heat treatment position inside the furnace 600.

In more detail, the distance between the first sensor 630 and the second sensor 635 is the length of the transport support plate S 'for transporting the substrate S for the flat panel display device on which the amorphous silicon or thin film transistor is formed. In a smaller case, both the first sensor 630 and the second sensor 635 recognize that there is a transport support plate S ′ for transporting the substrate S for a flat panel display device on which the amorphous silicon or thin film transistor is formed. In this case, it is determined that the flat panel display substrate S is aligned at a heat treatment position, and in other cases, it is determined that correct alignment is not performed.

In addition, when the distance between the first sensor 630 and the second sensor 635 is greater than the length of the transport support plate (S ') carrying the substrate (S) for the flat panel display device on which the amorphous silicon or thin film transistor is formed. In the case where both the first sensor 630 and the second sensor 635 do not recognize that there is a transport support plate S ′ that carries the substrate S for the flat panel display device on which the amorphous silicon or thin film transistor is formed. In addition, it is determined that the substrate S for the flat panel display device on which the amorphous silicon or the thin film transistor is formed is aligned at a heat treatment position.

When the substrate S for the flat panel display device on which the amorphous silicon or the thin film transistor is formed is aligned at the heat treatment position in the furnace 600, the heat treatment process is performed. That is, the amorphous silicon is crystallized, and the thin film transistor is activated with impurities doped in the active layer.

When the heat treatment process is completed, the transport support plate S 'for transporting the substrate S for the flat panel display device on which the amorphous silicon crystallized polysilicon or the thin film transistor is formed through the roller 620 is transferred again.

As described above, the heat treatment apparatus of a semiconductor device according to an embodiment of the present invention includes a sensor capable of recognizing the position of the semiconductor device for heat treatment inside the furnace 600 used in the heat treatment apparatus, thereby providing the semiconductor device. It can be ascertained that the device is aligned at a suitable position for the heat treatment inside the furnace.

Therefore, by stopping the process of misalignment of the semiconductor element, it is possible to prevent the heat treatment failure of the semiconductor element due to the misalignment, and also to the substrate S of the flat panel display device on which the amorphous silicon or the thin film transistor The deformation due to uneven heating can be prevented.

As described above, according to the present invention, the present invention can provide a heat treatment apparatus for a semiconductor device capable of heat treatment of a semiconductor element formed on the flat panel display substrate without deformation of the substrate having a poor thermal stability. .

While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (13)

A charging unit to which a transport support plate for transporting a substrate on which a semiconductor element for heat treatment is formed is supplied; A heating unit for heating the semiconductor element to a predetermined temperature; A process unit performing a heat treatment process of the semiconductor device; A cooling unit cooling the semiconductor device on which the heat treatment process is performed to a predetermined temperature; Comprising a discharge portion for discharging the transport support plate for transporting a substrate on which the semiconductor element is subjected to the heat treatment process is formed, each portion is made of an in-line (in-line) apparatus for performing a heat treatment process, the heating unit, The process section and the cooling section consist of a furnace that can be heated. The furnace A body part forming the body of the furnace; A roller for transporting the transport support plate in the body portion; And a furnace mounted to the side of the body and having a first sensor and a second sensor configured to recognize a position of the transport support plate. The method of claim 1, The interval between the first sensor and the second sensor is less than the length of the transport support plate for transporting the substrate on which the semiconductor element is formed. 3. The method of claim 2, The interval between the first sensor and the second sensor is a heat treatment apparatus of a semiconductor device, characterized in that 80% to 90% of the length of the transport support plate for transporting the substrate on which the semiconductor device is formed. The method of claim 1, And a gap between the first sensor and the second sensor is greater than a length of the substrate on which the semiconductor element is formed. The method of claim 4, wherein The interval between the first sensor and the second sensor is a heat treatment apparatus of the semiconductor device, characterized in that 110% to 120% of the length of the transport support plate for transporting the substrate on which the semiconductor device is formed. The method of claim 1, The body portion An outer housing constituting the body of the furnace; A heat insulating material attached along an inner wall of the outer housing; A conducting plate for uniform heating in the furnace; A heating element interposed between the insulation and the conducting plate; And an inner housing defining a space for heat treatment inside the furnace. The method of claim 6, And said heating means is any one of a resistance heater, a lamp heater and an induction coil. The method of claim 6, And the inner housing is made of quartz. The method of claim 6, And the conductive plate is made of a predetermined metal plate. The method of claim 1, The roller is a heat treatment apparatus for a semiconductor device, characterized in that made of quartz. The method of claim 1, The body unit has a plurality of roller inserting holes into which the roller is inserted and a sensor mounting hole in which the sensor is mounted on the side thereof. The method of claim 1, The heating unit is composed of at least one furnace (furnace), The furnace at the rear end of the transfer direction of the substrate on which the semiconductor element is formed has a higher temperature than the furnace at the tip of the transfer direction. The method of claim 1, The cooling unit is composed of at least one furnace (furnace), The furnace at the rear end of the transfer direction of the substrate on which the semiconductor element is formed has a lower temperature than the furnace at the tip of the transfer direction.

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