KR101706270B1 - Apparatus for treating substrate - Google Patents

Apparatus for treating substrate Download PDF

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Publication number
KR101706270B1
KR101706270B1 KR1020150088276A KR20150088276A KR101706270B1 KR 101706270 B1 KR101706270 B1 KR 101706270B1 KR 1020150088276 A KR1020150088276 A KR 1020150088276A KR 20150088276 A KR20150088276 A KR 20150088276A KR 101706270 B1 KR101706270 B1 KR 101706270B1
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South Korea
Prior art keywords
substrate
cooling
gas
chamber
heaters
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KR1020150088276A
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Korean (ko)
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KR20160048634A (en
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전홍희
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전홍희
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of uniformly and rapidly heating and cooling a substrate.
The present invention provides a plasma processing apparatus comprising: a substrate supporting unit disposed inside a chamber to support a substrate; A heating unit positioned above the substrate supporting unit to heat the substrate; A water cooling unit provided on the upper and lower surfaces of the chamber to cool the chamber; And a gas injection device for injecting a cooling gas into the substrate.

Description

[0001] APPARATUS FOR TREATING SUBSTRATE [0002]

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of uniformly and rapidly heating and cooling a substrate.

Generally, in a step of processing a substrate for manufacturing a semiconductor, an LED, an OLED, and a solar cell, a heat treatment process is performed on the substrate to improve the electrical characteristics of the electronic material constituting the substrate.

Conventionally, when a heat treatment process is performed on a substrate, the heat treatment process is concentrated only on the heat treatment conditions and the heat treatment time in the heating section for heating the substrate. However, the electrical characteristics of the electronic material constituting the substrate are greatly affected not only by the heating conditions and the heating time during the heat treatment process, but also by the cooling conditions and the cooling time.

Particularly, in order to improve the mass productivity, a method of collectively heat-treating a plurality of substrates is used in a process of manufacturing semiconductor chips, LED chips, and the like. However, since the conventional heat treatment apparatus is configured to cause the cooling gas to flow in the lateral direction from the side surface of the chamber during the cooling of the substrate, it is very difficult to uniformly control the temperature of the substrate when cooling the substrate, Thus, reproducibility of a plurality of substrates can not be ensured and electrical characteristics of the substrate are deteriorated.

An object of the present invention is to provide a substrate processing apparatus capable of improving the electrical characteristics and productivity of a substrate by uniformly and rapidly heating and cooling the substrate .

It is another object of the present invention to provide a substrate processing apparatus capable of rapid heating and cooling of a substrate in performing processes such as deposition or etching on the substrate.

The present invention provides a plasma processing apparatus comprising: a substrate supporting unit disposed inside a chamber to support a substrate; A heating unit positioned above the substrate supporting unit to heat the substrate; A water cooling unit provided on the upper and lower surfaces of the chamber to cool the chamber; And a gas injection device for injecting a cooling gas into the substrate.

In one embodiment, the heating unit includes a plurality of first heaters extending long in one direction, and a plurality of second heaters extending in a direction perpendicular to a direction in which the plurality of first heaters extend from a lower side of the plurality of first heaters And a plurality of second heaters.

The plurality of first heaters and the plurality of second heaters may include a plurality of elongated tubes and a plurality of lamp heaters respectively mounted in the plurality of tubes.

The plurality of lamp heaters may be arranged in a predetermined shape to form a heat generating portion, and the heat generating portion may be formed in a shape corresponding to a shape of the substrate or a shape in which a plurality of substrates are arranged.

According to a preferred embodiment of the present invention, the gas injection device includes a first injection plate provided on the upper side of the heating unit inside the chamber and having a plurality of first injection holes, and a plurality of A plurality of first injection holes and a plurality of second injection holes communicating with the plurality of first injection holes and the plurality of second injection holes, And a feeder.

The bottom surface of the first ejection plate may be provided with a heat shielding or reflective coating for blocking or reflecting heat from the heating unit.

Further, the gas cooling device may further include: a first cooling module disposed on the upper side of the first injection plate in contact with the first injection plate and having a plurality of first cooling water passages therein; A second cooling module installed on a lower side of the second injection plate and having a plurality of second cooling water passages therein and a second cooling module connected to the plurality of first cooling water passages and the plurality of second cooling water passages, And a cooling water supplier for supplying cooling water to the plurality of second cooling water passages.

According to one embodiment, a process gas injection plate for supplying process gas to the upper portion of the substrate may be provided between the upper portion of the substrate and the heating unit. The substrate supporting unit may further include a substrate cooling gas supply hole connected to the substrate cooling gas supply line to supply a substrate cooling gas to a lower portion of the substrate.

According to the embodiment of the present invention, in the course of heating and cooling the substrate, the vertical position and the rotational position of the substrate can be adjusted together, so that the thermal energy and the cooling gas are uniformly and rapidly transferred to the substrate, And can be quickly heated and cooled, thereby improving the electrical characteristics and productivity of the substrate.

Further, according to the embodiment of the present invention, since the heating unit for heating the substrate is constituted by a plurality of heaters arranged in a lattice form with respect to each other, the uniformity and rapidity of the entire substrate as the thermal energy is uniformly and intensively applied to the substrate So that the electrical characteristics and productivity of the substrate can be improved.

Further, according to the embodiment of the present invention, since the heat generating portion composed of a plurality of heaters is formed in a shape corresponding to the shape of the substrate or the shape in which the plurality of substrates are arranged, the entire substrate can be uniformly and quickly heated, , The electrical characteristics and productivity of the substrate can be improved.

In addition, according to the embodiment of the present invention, since the cooling gas can be injected to the upper side and the lower side of the substrate, the entire substrate can be cooled uniformly and quickly, thereby improving the electrical characteristics and productivity of the substrate .

Further, according to the embodiment of the present invention, since the inside of the chamber can be further cooled by the water-cooled cooling device in which the cooling water flows inside with the cooling by the cooling gas, the substrate can be cooled more quickly, The electrical characteristics and productivity of the semiconductor device can be improved.

1 is a cross-sectional view schematically showing a substrate processing apparatus according to a preferred embodiment of the present invention.
2 is a plan view schematically showing a heating unit of a substrate processing apparatus according to a preferred embodiment of the present invention.
3 is a cross-sectional view schematically showing a substrate processing apparatus according to another embodiment of the present invention.

Hereinafter, a substrate processing apparatus according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus according to a preferred embodiment of the present invention, and FIG. 2 is a plan view schematically showing a heating unit of a substrate processing apparatus according to a preferred embodiment of the present invention.

The substrate processing apparatus according to an embodiment of the present invention is an apparatus for performing a heat treatment on a substrate S while heating and cooling a substrate S for manufacturing a semiconductor, an LED, an OLED, and a solar cell. As the substrate S, a silicon carbide or a silicon wafer or a substrate S made of sapphire can be used.

1, a substrate processing apparatus according to an embodiment of the present invention includes a chamber 10, a substrate support unit 20, a drive unit 30, an exhaust unit 40, (50), and a cooling unit (60).

The chamber 10 provides a space in which the substrate S is disposed. During the heat treatment process, the space in the chamber 10 is sealed from the outside, so that a predetermined process pressure and process temperature can be maintained inside the space.

For example, the chamber 10 includes a first chamber 11 located on the upper side of the substrate support unit 20 and a second chamber 12 coupled to the lower side of the first chamber 11 can do. A gate valve 121 for loading and unloading the substrate S may be installed in the second chamber 12.

The substrate support unit 20 serves to support the substrate S inside the chamber 10. [ For example, as the substrate supporting unit 20, an adsorption chuck for adsorbing the substrate S using a predetermined suction force, an electrostatic chuck for fixing the substrate S using an electrostatic force, or a plurality of substrates S A susceptor to be mounted, or the like can be used. A plurality of substrates S can be supported and heat-treated in the substrate supporting unit 20. In this case, the productivity can be improved.

The drive unit 30 serves to rotate the substrate supporting unit 20 together with the function of moving the substrate supporting unit 20 vertically. Thereby, the substrate S can be rotated together with the substrate S being vertically moved by the drive unit 30. [

The drive unit 30 includes a drive shaft 31 connected to the substrate support unit 20 and an elevating device 32 connected to the drive shaft 31 from outside the chamber 10 to elevate the drive shaft 31, And a rotating device 33 connected to the elevating device 32 to rotate the driving shaft 31 by rotating the elevating device 32.

A hermetic member 34 is mounted around the drive shaft 31 to maintain the airtightness between the drive shaft 31 and the chamber 10. For example, as the hermetic member 34, a bellows structure may be used.

As the elevating device 32, various configurations such as an actuator operated by hydraulic pressure and air pressure, a ball screw device, or a linear motor may be used.

As the rotating device 33, various configurations such as a configuration having a rotating motor directly connected to the lifting device 32, a configuration connected to a rotation driving source through a belt-pulley, a link, a gear, or the like can be used.

The present invention is not limited to this configuration. The rotating device 33 may be connected to the driving shaft 31 and may be connected to the elevating device 32 32 may be connected to the rotating device 33 to elevate and retract the rotating device 33 and the configuration in which the elevating device 32 and the rotating device 33 are independently connected to the driving shaft 31 .

According to this configuration, the substrate S can be vertically moved by the lifting device 32 and can be rotated by the rotating device 33. [ Therefore, in the process of heating the substrate S using the heating unit 50, the vertical position and the rotational position of the substrate S are simultaneously or sequentially adjusted by the elevating device 32 and the rotating device 33 As the thermal energy is uniformly and quickly transferred to the substrate S, the entire substrate S can be uniformly and quickly heated. In the process of cooling the substrate S using the cooling unit 60, the vertical position and the rotational position of the substrate S are simultaneously or sequentially adjusted by the elevating device 32 and the rotating device 33 As the cooling gas is uniformly and rapidly transferred to the substrate S, the entire substrate S can be uniformly and quickly cooled. As described above, the uniform electrical heating and cooling of the substrate S can uniformly improve the electrical characteristics of the entire substrate S, and the substrate S can be uniformly heated and cooled, It is possible to improve the electrical characteristics and productivity. Further, the position and temperature of the substrate S can be freely controlled according to the process time and the process conditions.

The exhaust unit 40 serves to form a process pressure in the space in the chamber 10. [ For example, the exhaust unit 40 may include an exhaust line 41 communicating with the internal space of the chamber 10, and a vacuum pump 42 connected to the exhaust line 41. The process pressure inside the chamber 10 can be adjusted by adjusting the suction force of the vacuum pump 42.

1 and 2, the heating unit 50 includes a plurality of first heaters 51 located on the upper side of the inside of the chamber 10 and extending long in one direction, 51 extending in a direction transverse to the plurality of first heaters 51. The second heaters 51 may be formed of a plurality of heaters 51 extending in a direction transverse to the plurality of first heaters 51. [ For example, the direction in which the first heater 51 extends and the direction in which the second heater 52 extends can be orthogonal to each other. As described above, since the plurality of first heaters 51 and the plurality of second heaters 52 are arranged in a lattice form, thermal energy can be uniformly and intensively applied to the substrate S, And can be quickly heated.

The first heater 51 includes a first tube 511 made of quartz material and extending long and a first lamp heater 512 mounted inside the first tube 511. The second heater 52 includes a second tube 521 formed of a quartz material and extending long and a second lamp heater 522 mounted inside the second tube 521. The plurality of lamp heaters 512 and 522 are mounted inside the plurality of tubes 511 and 521 so that the plurality of lamp heaters 512 and 522 are firmly held in place by the plurality of tubes 511 and 521 And the interval between the plurality of lamp heaters 512 and 522 can be kept constant.

The first lamp heater 512 and the second lamp heater 522 may be configured to generate heat using electromagnetic waves. For example, the first lamp heater 512 and the second lamp heater 522 may include a filament as a heating element.

The first lamp heater 512 and the second lamp heater 522 are arranged in a predetermined shape to form the heat generating portion 53. The heat generating portion 53 is preferably formed in a shape corresponding to the shape of the substrate S or the shape in which the plurality of the substrates S are arranged. For example, when the substrate S has a circular shape or a plurality of the substrates S are arranged in a circular shape, the heat generating portion 53 may be formed in a circular shape to intensively heat the substrate S, Thus, the entire substrate S can be uniformly and quickly heated. Accordingly, it is possible to prevent unnecessary energy wastage that may occur when the shape of the substrate S or the shape in which the plurality of substrates S are arranged and the shape of the heat generating portion 53 are different from each other. For example, adjustment of the shape and / or size of the heat generating portion 53 can be performed by adjusting the lengths of the filaments constituting the first lamp heater 512 and the second lamp heater 522.

The cooling unit 60 includes a gas injection device 70 for injecting cooling gas into the substrate S in the chamber 10 and a cooling water circulating inside the chamber 10 separately from the cooling gas injected by the gas injection device 70. [ And a water-cooled cooling unit 80 for cooling the inside of the chamber by the cooling water.

The gas injection device 70 includes a first injection plate 71 provided on the upper side of the first chamber 11 and having a plurality of first injection holes 711, A second injection plate 72 having a plurality of second injection holes 721 and a plurality of second injection holes 711 and a plurality of second injection holes 721, And a gas supplier 73 for supplying gas to the one minute vent hole 711 and the plurality of second injection holes 721. [

Since the first ejection plate 71 and the second ejection plate 72 each have the plurality of first ejection holes 711 and the plurality of second ejection holes 721, So that the entire substrate S can be uniformly cooled.

On the other hand, it is preferable that the bottom surface of the first ejection plate 71 is provided with a heat blocking or reflective coating for blocking or reflecting heat from the heat generating part 53. As an example of the heat shielding or reflective coating, the lower surface of the first injection plate 71 may be subjected to a gold coating treatment.

The cooling gas is injected to the upper side and the lower side of the substrate S through the first injection plate 71 and the second injection plate 72 provided on the upper side and the lower side of the chamber 10, So that the cooling gas can be uniformly distributed to the entire substrate S. Thus, the entire substrate S can be uniformly cooled, and thus the electrical characteristics of the substrate S can be improved. In addition, since the cooling gas can be injected to the upper side and the lower side of the substrate S, the substrate S can be cooled more quickly than in the conventional case where the cooling gas is injected in the lateral direction from one side of the chamber 10 Thus, the electrical characteristics and productivity of the substrate S can be improved.

The water cooling unit 80 includes a first cooling module 81 provided on the upper side of the first injection plate 71 and having a plurality of first cooling water passages 811 therein, A second cooling module 82 having a plurality of second cooling water passages 821 provided therein and a plurality of first cooling water passages 811 and a plurality of second cooling water passages 821 via a conduit And a cooling water supplier 83 for supplying cooling water to the plurality of first cooling water passages 811 and the plurality of second cooling water passages 821. [ The first cooling water passage 811 and the second cooling water passage 821 may be divided into a plurality of passages so as to control the flow of cooling water for each of a plurality of regions and to be able to control the temperature for each zone .

A conduit connecting the plurality of first injection holes 711 to the gas supply device 73 and a conduit connecting the plurality of second injection holes 721 to the gas supply device 73 are provided in the first cooling module 81 and the second cooling module 81, May be positioned through the cooling module 82.

The first injection plate 71 is cooled while being in contact with the first cooling module 81 located at the upper side thereof, and supplies the cooling gas through the first injection hole 711. Further, the second injection plate 72 is cooled while being in contact with the second cooling module 82 located at the lower part thereof, and supplies the cooling gas through the second injection hole 721. The first injection plate 71 and the second injection plate 72 are cooled by the heat transfer between the first cooling module 81 and the second cooling module 82 so that the first cooling module 81 and the second cooling module 81, And conveys the cooling of the cooling module 82.

In cooling the substrate S, the inside of the heating unit 50 and the substrate S and the chamber 10 are cooled by the first cooling module 81 and the second cooling module 82, The cooling by the cooling gas supplied through the first spray hole 711 of the spray plate 71 and the second spray hole 721 of the second spray plate 72 is performed at the same time.

That is, according to the present invention, cooling by the gas injection device 70 is performed together with cooling by the water-cooled cooling device 80, so that rapid cooling can be performed, and the substrate S is sprayed through the gas injection device 70 The entire substrate S can be uniformly cooled by the cooling gas. Accordingly, the cooling time of the substrate S is shortened, so that the productivity of the substrate can be improved and the electrical characteristics can be improved.

On the other hand, in order to quickly heat the substrate S in the step of heating the substrate S using the heating unit 50, the first cooling water passage 811 and the second cooling water passage 821 are provided with cooling water It is preferable that it does not exist. For this purpose, the cooling water supplier 83 may discharge the cooling water in the first cooling water passage 811 and the second cooling water passage 821 before the heating process of the substrate S is performed.

The substrate processing apparatus according to the embodiment of the present invention may further include a temperature sensor 90 for measuring the temperature in the chamber 10. [ The amount of heat generated by the heaters 51 and 52 and the amount of heat generated by the cooling through the first spray hole 711 and the second spray hole 721 are calculated based on the temperature in the chamber 10 measured using the temperature sensor 90. [ The flow rate and / or the temperature of the cooling water passing through the first cooling water passage 811 and the second cooling water passage 821 can be adjusted, and thereby the substrate S is heated The temperature and the temperature at which the substrate S is cooled can be appropriately adjusted.

3 is a cross-sectional view schematically showing a substrate processing apparatus according to another embodiment of the present invention.

The substrate processing apparatus shown in Fig. 3 is further characterized in that it further comprises a process gas injection plate 100 for supplying a process gas. The substrate supporting unit 20 is further provided with a substrate cooling gas supply line 110 for cooling the substrate S, and the other configuration is substantially the same as the substrate processing apparatus shown in Fig.

A process gas supply line 102 is connected to the process gas injection plate 100 and a plurality of process gas supply holes 104 are provided in the process gas injection plate 100 to supply a process gas to the upper side of the substrate S do.

Depending on the process conditions, the process gas injection plate 100 supplies a suitable process gas into the chamber 10. The heating unit 50 and the cooling unit 60 control the temperature conditions inside the chamber 10 according to the process. When heating is required, the heating unit 50 raises the temperature inside the chamber 10. When cooling is required, the gas injection device 70 and the water cooling device 80 are operated to cool the inside of the chamber 10.

According to this structure, it is possible to efficiently heat and cool the substrate in accordance with the processing process of the substrate S. The upper surface of the substrate supporting unit 20 is provided with a substrate cooling gas supply hole 112 for transferring the substrate cooling gas supplied through the substrate cooling gas supply line 110 to the lower surface of the substrate, Enabling further cooling.

Although the preferred embodiments of the present invention have been described by way of example, the scope of the present invention is not limited to these specific embodiments, and can be appropriately changed within the scope of the claims.

10: chamber 20: substrate support unit
30: drive unit 40: exhaust unit
50: heating unit 60: cooling unit
70: Gas injection device 80: Water cooling device

Claims (9)

A substrate support unit disposed inside the chamber and supporting the substrate;
A heating unit positioned above the substrate supporting unit to heat the substrate;
A water cooling unit provided on the upper and lower surfaces of the chamber to cool the chamber; And
And a gas injection device for injecting a cooling gas into the substrate,
Wherein the gas injection device comprises a first injection plate provided on the upper side of the heating unit inside the chamber and having a plurality of first injection holes and a second injection plate provided on the lower side of the chamber and having a plurality of second injection holes, And a gas supply unit connected to the plurality of first injection holes and the plurality of second injection holes to supply the gas to the plurality of first injection holes and the plurality of second injection holes, Processing device. The method according to claim 1,
The heating unit includes a plurality of first heaters extending long in one direction and a plurality of second heaters extending long in a direction orthogonal to a direction in which the plurality of first heaters extend from a lower side of the plurality of first heaters, The substrate processing apparatus comprising: 3. The method of claim 2,
Wherein the plurality of first heaters and the plurality of second heaters each include a plurality of elongated tubes and a plurality of lamp heaters each mounted inside the plurality of tubes. The method of claim 3,
Wherein the plurality of lamp heaters form a heat generating portion and the heat generating portion is formed in a shape corresponding to a shape of the substrate or a shape in which a plurality of substrates are arranged. delete 5. The method according to any one of claims 1 to 4,
Wherein a bottom surface of the first ejection plate is provided with a heat blocking or reflective coating for blocking or reflecting heat from the heating unit. 5. The method according to any one of claims 1 to 4,
Wherein the gas cooling apparatus further comprises a first cooling module disposed on the upper side of the first injection plate in contact with the first injection plate and having a plurality of first cooling water passages therein, A second cooling module installed on a lower side of the plate and having a plurality of second cooling water passages therein and a second cooling module connected to the plurality of first cooling water passages and the plurality of second cooling water passages, And a cooling water supply device for supplying cooling water to the second cooling water passage of the second cooling water passage. 8. The method of claim 7,
Wherein a process gas injection plate for supplying a process gas to an upper portion of the substrate is provided between the upper portion of the substrate and the heating unit. 9. The method of claim 8,
Wherein the substrate supporting unit is provided with a substrate cooling gas supply hole connected to a substrate cooling gas supply line for supplying a substrate cooling gas to a lower portion of the substrate.
KR1020150088276A 2014-10-24 2015-06-22 Apparatus for treating substrate KR101706270B1 (en)

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KR101877617B1 (en) * 2016-07-27 2018-07-11 국방과학연구소 Cooling system for the combined cooling type seeker window
KR20180060551A (en) * 2016-11-29 2018-06-07 (주) 세츠 Apparatus for graphene synthesis
JP7116558B2 (en) 2018-03-02 2022-08-10 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing system

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KR101346850B1 (en) * 2007-05-11 2014-01-07 주성엔지니어링(주) Substrate processing apparatus for heating substrate uniformly and removal method of natural oxide layer and substrate processing method using the same
KR101160168B1 (en) * 2010-04-19 2012-06-28 세메스 주식회사 Shower head and apparatus for treating substrate with the same

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Publication number Priority date Publication date Assignee Title
KR20210050834A (en) * 2019-10-29 2021-05-10 세메스 주식회사 Heat treatment unit, substrate processing apparatus and substrate processing method
KR102265285B1 (en) 2019-10-29 2021-06-14 세메스 주식회사 Heat treatment unit, substrate processing apparatus and substrate processing method

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