KR20060041970A - 피처리체의 산화 방법 및 산화 장치 - Google Patents
피처리체의 산화 방법 및 산화 장치 Download PDFInfo
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- KR20060041970A KR20060041970A KR1020050012519A KR20050012519A KR20060041970A KR 20060041970 A KR20060041970 A KR 20060041970A KR 1020050012519 A KR1020050012519 A KR 1020050012519A KR 20050012519 A KR20050012519 A KR 20050012519A KR 20060041970 A KR20060041970 A KR 20060041970A
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- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000007789 gas Substances 0.000 claims abstract description 306
- 230000001603 reducing effect Effects 0.000 claims abstract description 103
- 238000012545 processing Methods 0.000 claims abstract description 91
- 238000002347 injection Methods 0.000 claims abstract description 74
- 239000007924 injection Substances 0.000 claims abstract description 74
- 230000003647 oxidation Effects 0.000 claims abstract description 65
- 230000001590 oxidative effect Effects 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 9
- 235000012431 wafers Nutrition 0.000 claims description 152
- 238000011282 treatment Methods 0.000 claims description 32
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 4
- 229910052805 deuterium Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims 1
- 230000004308 accommodation Effects 0.000 abstract description 7
- 239000007800 oxidant agent Substances 0.000 abstract 1
- 239000000047 product Substances 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 15
- 238000011144 upstream manufacturing Methods 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- 238000009826 distribution Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 238000009279 wet oxidation reaction Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- LXRZVMYMQHNYJB-UNXOBOICSA-N [(1R,2S,4R)-4-[[5-[4-[(1R)-7-chloro-1,2,3,4-tetrahydroisoquinolin-1-yl]-5-methylthiophene-2-carbonyl]pyrimidin-4-yl]amino]-2-hydroxycyclopentyl]methyl sulfamate Chemical compound CC1=C(C=C(S1)C(=O)C1=C(N[C@H]2C[C@H](O)[C@@H](COS(N)(=O)=O)C2)N=CN=C1)[C@@H]1NCCC2=C1C=C(Cl)C=C2 LXRZVMYMQHNYJB-UNXOBOICSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
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- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (13)
- 소정의 길이를 갖는 진공화 가능하게 이루어진 처리 용기 내에 피처리체를 복수매 수용하고, 상기 처리 용기 내에 산화성 가스와 환원성 가스를 공급하여 상기 양 가스를 반응시킴으로써 발생한 산소 활성종과 수산기 활성종을 갖는 분위기 중에서 상기 피처리체의 표면을 산화하도록 한 피처리체의 산화 방법에 있어서,상기 산화성 가스를 상기 처리 용기의 길이 방향의 일단부측으로부터 공급하고, 상기 환원성 가스를 상기 처리 용기의 길이 방향의 다른 위치에 설치한 복수의 가스 분사구로부터 공급할 수 있게 하는 동시에, 상기 처리 용기 내의 상기 피처리체의 수용 매수와 수용 위치에 따라서 상기 가스 분사구 중 어느 하나를 선택하고, 상기 선택된 가스 분사구로부터 환원성 가스를 공급하도록 한 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항에 있어서, 상기 선택되는 가스 분사구는 상기 가스 분사구로부터 개별로 환원성 가스를 흐르게 하여 산화 처리를 행하였을 때에 형성되는 산화막의 막 두께를 기초로 하여 상기 막 두께의 면간 균일성이 높아지도록 미리 요구된 가스 분사구인 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항 또는 제2항에 있어서, 상기 선택된 가스 분사구로부터 공급되는 환원성 가스의 유량은 가장 적절한 값으로 제어되어 있는 것을 특징으로 하는 피처리체 의 산화 방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 양 가스에 대한 상기 환원성 가스의 농도는 5 % 내지 40 %의 범위 내인 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 산화성 가스는 O2와 N2O와 NO와 NO2와 O3로 이루어지는 군으로부터 선택되는 1개 이상의 가스를 포함하고, 상기 환원성 가스는 H2와 NH3와 CH4와 HCl과 중수소로 이루어지는 군으로부터 선택되는 1개 이상의 가스를 포함하는 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 피처리체는 제품용 웨이퍼 및 모니터용 웨이퍼로 구성되어 있는 것을 특징으로 하는 피처리체의 산화 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 피처리체는 제품용 웨이퍼만으로 구성되어 있는 것을 특징으로 하는 피처리체의 산화 방법.
- 피처리체를 소정의 피치로 복수매 지지하는 보유 지지 수단과,상기 보유 지지 수단을 수용할 수 있게 소정의 길이를 갖는 동시에 진공화 가능하게 이루어진 처리 용기와,상기 피처리체를 가열하기 위한 가열 수단과,상기 처리 용기 내의 일단부측으로 산화성 가스를 공급하는 산화성 가스 공급 수단과,상기 처리 용기 내의 길이 방향의 다른 위치에 환원성 가스를 공급하는 복수개의 환원성 가스 노즐을 갖는 환원성 가스 공급 수단과,상기 처리 용기 내의 상기 피처리체의 수용 매수와 수용 위치를 기초로 하여, 상기 환원성 가스 노즐 중 어느 하나를 선택하고, 상기 선택된 환원성 가스 노즐로부터 환원성 가스를 공급하도록 제어하는 주 제어부를 구비한 것을 특징으로 하는 산화 장치.
- 제8항에 있어서, 상기 선택되는 환원성 가스 노즐은 상기 환원성 가스로부터 개별로 환원성 가스를 흐르게 하여 산화 처리를 행하였을 때에 형성되는 막 두께를 기초로 하여 상기 막 두께의 면간 균일성이 높아지도록 미리 요구된 환원성 가스 노즐인 것을 특징으로 하는 산화 장치.
- 제8항 또는 제9항에 있어서, 상기 보유 지지 수단에 수용되는 상기 피처리체의 수용 매수가 상기 보유 지지 수단의 최대 수용 능력 매수보다도 적은 경우에는, 상기 적은 매수에 상당하는 영역은 비어 있는 영역으로 되어 있는 것을 특징으로 하는 산화 장치.
- 제8항 내지 제10항 중 어느 한 항에 있어서, 상기 산화성 가스는 O2와 N2O와 NO와 NO2와 O3로 이루어지는 군으로부터 선택되는 1개 이상의 가스를 포함하고, 상기 환원성 가스는 H2와 NH3와 CH4와 HCl과 중수소로 이루어지는 군으로부터 선택되는 1개 이상의 가스를 포함하는 것을 특징으로 하는 산화 장치.
- 제8항 내지 제11항 중 어느 한 항에 있어서, 상기 피처리체는 제품용 웨이퍼 및 모니터용 웨이퍼로 구성되어 있는 것을 특징으로 하는 산화 장치.
- 제8항 내지 제11항 중 어느 한 항에 있어서, 상기 피처리체는 제품용 웨이퍼만으로 구성되어 있는 것을 특징으로 하는 산화 장치.
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Application Number | Priority Date | Filing Date | Title |
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JP2004040637 | 2004-02-17 | ||
JPJP-P-2004-00040637 | 2004-02-17 | ||
JPJP-P-2005-00009631 | 2005-01-17 | ||
JP2005009631A JP4586544B2 (ja) | 2004-02-17 | 2005-01-17 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
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KR20060041970A true KR20060041970A (ko) | 2006-05-12 |
KR100888539B1 KR100888539B1 (ko) | 2009-03-11 |
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US (2) | US7419550B2 (ko) |
JP (1) | JP4586544B2 (ko) |
KR (1) | KR100888539B1 (ko) |
TW (1) | TW200539350A (ko) |
Families Citing this family (13)
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JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
JP4609098B2 (ja) * | 2004-03-24 | 2011-01-12 | 東京エレクトロン株式会社 | 被処理体の酸化方法、酸化装置及び記憶媒体 |
KR100609065B1 (ko) * | 2004-08-04 | 2006-08-10 | 삼성전자주식회사 | 산화막 형성 장치 및 방법 |
JP4455225B2 (ja) * | 2004-08-25 | 2010-04-21 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP4899744B2 (ja) | 2006-09-22 | 2012-03-21 | 東京エレクトロン株式会社 | 被処理体の酸化装置 |
US20090197424A1 (en) * | 2008-01-31 | 2009-08-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
JP5665289B2 (ja) * | 2008-10-29 | 2015-02-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
US8409352B2 (en) * | 2010-03-01 | 2013-04-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus |
KR101427726B1 (ko) * | 2011-12-27 | 2014-08-07 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
JP5792390B2 (ja) * | 2012-07-30 | 2015-10-14 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
KR102014926B1 (ko) * | 2017-10-31 | 2019-08-27 | 에스케이실트론 주식회사 | 실리콘 웨이퍼의 산화물층의 두께 예측 방법 |
US11756794B2 (en) * | 2019-11-01 | 2023-09-12 | Texas Instruments Incorporated | IC with deep trench polysilicon oxidation |
CN115989566A (zh) * | 2020-09-25 | 2023-04-18 | 株式会社国际电气 | 基板处理装置、半导体器件的制造方法、基板处理方法以及程序 |
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JPS571232A (en) | 1980-06-04 | 1982-01-06 | Mitsubishi Electric Corp | Oxide film forming device |
JP2902012B2 (ja) | 1989-10-27 | 1999-06-07 | 国際電気株式会社 | 低圧酸化装置 |
US5043299B1 (en) * | 1989-12-01 | 1997-02-25 | Applied Materials Inc | Process for selective deposition of tungsten on semiconductor wafer |
JPH0418727A (ja) | 1990-05-11 | 1992-01-22 | Kokusai Electric Co Ltd | 縦型拡散装置 |
SE510612C2 (sv) * | 1996-11-08 | 1999-06-07 | Ericsson Telefon Ab L M | Förfarande och anordning för att Likströmsmässigt anpassa en första krets till minst en andra krets |
US6037273A (en) | 1997-07-11 | 2000-03-14 | Applied Materials, Inc. | Method and apparatus for insitu vapor generation |
JP3619024B2 (ja) * | 1997-09-16 | 2005-02-09 | キヤノン株式会社 | 電子源の製造方法及び画像形成装置の製造方法 |
JP3567070B2 (ja) * | 1997-12-27 | 2004-09-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
JPH11345777A (ja) * | 1998-05-29 | 1999-12-14 | Tokyo Electron Ltd | 成膜装置 |
US6383300B1 (en) * | 1998-11-27 | 2002-05-07 | Tokyo Electron Ltd. | Heat treatment apparatus and cleaning method of the same |
JP4232307B2 (ja) * | 1999-03-23 | 2009-03-04 | 東京エレクトロン株式会社 | バッチ式熱処理装置の運用方法 |
KR100560867B1 (ko) * | 2000-05-02 | 2006-03-13 | 동경 엘렉트론 주식회사 | 산화방법 및 산화시스템 |
JP3436256B2 (ja) | 2000-05-02 | 2003-08-11 | 東京エレクトロン株式会社 | 被処理体の酸化方法及び酸化装置 |
KR100421036B1 (ko) * | 2001-03-13 | 2004-03-03 | 삼성전자주식회사 | 웨이퍼 처리 장치 및 이를 이용한 웨이퍼 처리 방법 |
KR20020087311A (ko) * | 2001-05-15 | 2002-11-22 | 삼성전자 주식회사 | 반도체 제조용 수직 확산로 설비 |
JP4792180B2 (ja) * | 2001-07-31 | 2011-10-12 | 株式会社日立国際電気 | 半導体デバイスの製造方法、基板処理方法および基板処理装置 |
JP2003318172A (ja) * | 2002-04-19 | 2003-11-07 | Tokyo Electron Ltd | 成膜方法、成膜処理時間補正式の導出方法、成膜装置、およびプログラム |
JP3578155B2 (ja) * | 2002-07-05 | 2004-10-20 | 東京エレクトロン株式会社 | 被処理体の酸化方法 |
WO2005020309A1 (ja) * | 2003-08-26 | 2005-03-03 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法および基板処理装置 |
JP2005072377A (ja) * | 2003-08-26 | 2005-03-17 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
US20050056219A1 (en) * | 2003-09-16 | 2005-03-17 | Tokyo Electron Limited | Formation of a metal-containing film by sequential gas exposure in a batch type processing system |
US6869892B1 (en) | 2004-01-30 | 2005-03-22 | Tokyo Electron Limited | Method of oxidizing work pieces and oxidation system |
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2005
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- 2005-01-31 TW TW094102898A patent/TW200539350A/zh not_active IP Right Cessation
- 2005-02-16 KR KR1020050012519A patent/KR100888539B1/ko active IP Right Grant
- 2005-02-17 US US11/059,630 patent/US7419550B2/en active Active
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US20080268654A1 (en) | 2008-10-30 |
US7674724B2 (en) | 2010-03-09 |
JP4586544B2 (ja) | 2010-11-24 |
KR100888539B1 (ko) | 2009-03-11 |
US20060183343A1 (en) | 2006-08-17 |
JP2005268755A (ja) | 2005-09-29 |
TW200539350A (en) | 2005-12-01 |
TWI379357B (ko) | 2012-12-11 |
US7419550B2 (en) | 2008-09-02 |
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