KR20060031629A - 발광소자 탑재용 기판 및 발광소자 - Google Patents
발광소자 탑재용 기판 및 발광소자 Download PDFInfo
- Publication number
- KR20060031629A KR20060031629A KR1020057024140A KR20057024140A KR20060031629A KR 20060031629 A KR20060031629 A KR 20060031629A KR 1020057024140 A KR1020057024140 A KR 1020057024140A KR 20057024140 A KR20057024140 A KR 20057024140A KR 20060031629 A KR20060031629 A KR 20060031629A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- substrate
- emitting element
- light
- aluminum nitride
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 901
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 188
- 230000003287 optical effect Effects 0.000 abstract description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 693
- 238000002834 transmittance Methods 0.000 description 426
- 229910052761 rare earth metal Inorganic materials 0.000 description 133
- 238000010304 firing Methods 0.000 description 130
- 238000001465 metallisation Methods 0.000 description 123
- 239000002245 particle Substances 0.000 description 123
- 239000000463 material Substances 0.000 description 120
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 117
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 101
- 229910002601 GaN Inorganic materials 0.000 description 100
- 229910052760 oxygen Inorganic materials 0.000 description 96
- 229910052710 silicon Inorganic materials 0.000 description 92
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 90
- 229910052799 carbon Inorganic materials 0.000 description 90
- 239000001301 oxygen Substances 0.000 description 90
- 229910052750 molybdenum Inorganic materials 0.000 description 86
- 229910052721 tungsten Inorganic materials 0.000 description 86
- 229910052751 metal Inorganic materials 0.000 description 84
- 239000002184 metal Substances 0.000 description 84
- 239000010703 silicon Substances 0.000 description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 77
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 76
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 73
- 229910052782 aluminium Inorganic materials 0.000 description 71
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 71
- 239000000843 powder Substances 0.000 description 70
- 238000005245 sintering Methods 0.000 description 70
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 69
- 239000010410 layer Substances 0.000 description 68
- 150000001342 alkaline earth metals Chemical class 0.000 description 67
- 239000011521 glass Substances 0.000 description 66
- 239000010409 thin film Substances 0.000 description 65
- 229910052720 vanadium Inorganic materials 0.000 description 62
- 238000000034 method Methods 0.000 description 61
- 239000010936 titanium Substances 0.000 description 60
- 239000010955 niobium Substances 0.000 description 59
- 229910052719 titanium Inorganic materials 0.000 description 59
- 239000013078 crystal Substances 0.000 description 58
- 229910052758 niobium Inorganic materials 0.000 description 58
- 229910052715 tantalum Inorganic materials 0.000 description 58
- 239000011787 zinc oxide Substances 0.000 description 58
- 239000012298 atmosphere Substances 0.000 description 55
- -1 nitride Chemical class 0.000 description 55
- 150000001875 compounds Chemical class 0.000 description 51
- 239000011777 magnesium Substances 0.000 description 50
- 229920005989 resin Polymers 0.000 description 50
- 239000011347 resin Substances 0.000 description 50
- 229910052749 magnesium Inorganic materials 0.000 description 49
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 48
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 48
- 229910052802 copper Inorganic materials 0.000 description 48
- 239000010949 copper Substances 0.000 description 48
- 239000000203 mixture Substances 0.000 description 46
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 45
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 45
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 44
- 239000004065 semiconductor Substances 0.000 description 44
- 239000010408 film Substances 0.000 description 42
- 239000011701 zinc Substances 0.000 description 42
- 229910052725 zinc Inorganic materials 0.000 description 41
- 238000006243 chemical reaction Methods 0.000 description 37
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 36
- 239000011733 molybdenum Substances 0.000 description 36
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 36
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 36
- 239000010937 tungsten Substances 0.000 description 36
- 229910052723 transition metal Inorganic materials 0.000 description 35
- 239000011575 calcium Substances 0.000 description 33
- 229910052791 calcium Inorganic materials 0.000 description 33
- 229910052783 alkali metal Inorganic materials 0.000 description 32
- 150000001340 alkali metals Chemical class 0.000 description 32
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 31
- 239000002994 raw material Substances 0.000 description 31
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 30
- 239000000395 magnesium oxide Substances 0.000 description 30
- 230000002829 reductive effect Effects 0.000 description 30
- 150000003624 transition metals Chemical class 0.000 description 30
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 29
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 29
- 238000010344 co-firing Methods 0.000 description 29
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 29
- 239000000956 alloy Substances 0.000 description 28
- 229910045601 alloy Inorganic materials 0.000 description 28
- 239000011651 chromium Substances 0.000 description 28
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 27
- 239000000292 calcium oxide Substances 0.000 description 27
- 239000012535 impurity Substances 0.000 description 27
- 229910052804 chromium Inorganic materials 0.000 description 26
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- 239000000853 adhesive Substances 0.000 description 25
- 230000001070 adhesive effect Effects 0.000 description 25
- 239000002585 base Substances 0.000 description 25
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 24
- 239000000919 ceramic Substances 0.000 description 24
- 230000000694 effects Effects 0.000 description 24
- 229910052759 nickel Inorganic materials 0.000 description 24
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 23
- 239000012071 phase Substances 0.000 description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 22
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 22
- 150000002739 metals Chemical class 0.000 description 22
- 229910017052 cobalt Inorganic materials 0.000 description 21
- 239000010941 cobalt Substances 0.000 description 21
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 21
- 229910052735 hafnium Inorganic materials 0.000 description 21
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 20
- 230000007423 decrease Effects 0.000 description 19
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 19
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 18
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 18
- 239000003638 chemical reducing agent Substances 0.000 description 17
- 230000001590 oxidative effect Effects 0.000 description 17
- 239000012466 permeate Substances 0.000 description 17
- 238000007789 sealing Methods 0.000 description 17
- 239000002356 single layer Substances 0.000 description 17
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 16
- 238000002844 melting Methods 0.000 description 16
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Inorganic materials [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 16
- 229910002637 Pr6O11 Inorganic materials 0.000 description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 15
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 15
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 15
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 15
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 15
- 230000008018 melting Effects 0.000 description 15
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium oxide Inorganic materials [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 15
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 15
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 15
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 14
- 229910052790 beryllium Inorganic materials 0.000 description 14
- 229910052793 cadmium Inorganic materials 0.000 description 14
- 229910002091 carbon monoxide Inorganic materials 0.000 description 14
- 239000003086 colorant Substances 0.000 description 14
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 14
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 14
- 229910052732 germanium Inorganic materials 0.000 description 14
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 14
- 229910052711 selenium Inorganic materials 0.000 description 14
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- 229910052714 tellurium Inorganic materials 0.000 description 14
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- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium (III) oxide Inorganic materials [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 12
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- 239000000377 silicon dioxide Substances 0.000 description 12
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 11
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 11
- 229910052906 cristobalite Inorganic materials 0.000 description 11
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 11
- 229930195733 hydrocarbon Natural products 0.000 description 11
- 150000002430 hydrocarbons Chemical class 0.000 description 11
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- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 11
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 11
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- 230000009467 reduction Effects 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 11
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- 229910052581 Si3N4 Inorganic materials 0.000 description 10
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- 238000007733 ion plating Methods 0.000 description 10
- 238000005304 joining Methods 0.000 description 10
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 230000035699 permeability Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000007740 vapor deposition Methods 0.000 description 10
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 9
- 229910052727 yttrium Inorganic materials 0.000 description 9
- 240000001417 Vigna umbellata Species 0.000 description 8
- 235000011453 Vigna umbellata Nutrition 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 238000001354 calcination Methods 0.000 description 8
- 239000002131 composite material Substances 0.000 description 8
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 8
- 229910052734 helium Inorganic materials 0.000 description 8
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 8
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 8
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
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- 229910052684 Cerium Inorganic materials 0.000 description 7
- 229910052692 Dysprosium Inorganic materials 0.000 description 7
- 229910052691 Erbium Inorganic materials 0.000 description 7
- 229910052693 Europium Inorganic materials 0.000 description 7
- 229910052688 Gadolinium Inorganic materials 0.000 description 7
- 229910052689 Holmium Inorganic materials 0.000 description 7
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- 229910052777 Praseodymium Inorganic materials 0.000 description 7
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- 230000000996 additive effect Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
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- 229910000679 solder Inorganic materials 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 7
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- 229910052772 Samarium Inorganic materials 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical class OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 238000004040 coloring Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
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- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 5
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- 150000002484 inorganic compounds Chemical class 0.000 description 5
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- 150000002736 metal compounds Chemical class 0.000 description 5
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 4
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical class OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 4
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- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
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- 239000000047 product Substances 0.000 description 4
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- 150000003839 salts Chemical class 0.000 description 4
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Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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JP2003186373 | 2003-06-30 | ||
JPJP-P-2003-00186373 | 2003-06-30 | ||
JPJP-P-2003-00345536 | 2003-10-03 | ||
JP2003345536A JP2005035864A (ja) | 2002-10-15 | 2003-10-03 | 発光素子搭載用基板 |
JP2003409959A JP2005175039A (ja) | 2003-12-09 | 2003-12-09 | 発光素子搭載用基板及び発光素子 |
JPJP-P-2003-00409959 | 2003-12-09 |
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KR20060031629A true KR20060031629A (ko) | 2006-04-12 |
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WO (1) | WO2005004246A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101278891B1 (ko) * | 2011-09-06 | 2013-06-26 | 공주대학교 산학협력단 | 투명 프릿 소재용 유리 조성물 |
KR101492350B1 (ko) * | 2010-09-27 | 2015-02-10 | 가부시끼가이샤 도시바 | GaN 베이스 반도체 결정 성장용 다결정 질화알루미늄 기재 및 그것을 이용한 GaN 베이스 반도체의 제조 방법 |
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TWI449137B (zh) * | 2006-03-23 | 2014-08-11 | Ceramtec Ag | 構件或電路用的攜帶體 |
JP2012072011A (ja) * | 2010-09-28 | 2012-04-12 | Sumitomo Electric Ind Ltd | セラミックス複合材料および半導体層貼り合わせ基板用の下地基板の製造方法 |
JP4928013B1 (ja) * | 2010-12-28 | 2012-05-09 | パナソニック株式会社 | 発光装置、発光モジュール及びランプ |
WO2012090356A1 (fr) * | 2010-12-28 | 2012-07-05 | パナソニック株式会社 | Dispositif électroluminescent, module électroluminescent et lampe |
CN104170106A (zh) | 2012-03-15 | 2014-11-26 | 松下电器产业株式会社 | Led用基板、led模块和led灯 |
EP2933847B1 (fr) | 2012-12-14 | 2019-05-22 | NGK Insulators, Ltd. | Élément à émission de lumière de surface utilisant un substrat en oxyde de zinc |
CN114315112A (zh) * | 2021-12-30 | 2022-04-12 | 赵宇琪 | 一种玻璃热压成型单元 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60130176A (ja) * | 1983-12-17 | 1985-07-11 | Toshiba Corp | 半導体発光装置 |
JPH05335627A (ja) * | 1992-05-27 | 1993-12-17 | Kyocera Corp | 発光素子収納用パッケージ |
JP3832877B2 (ja) * | 1995-07-26 | 2006-10-11 | 日亜化学工業株式会社 | セラミックスledパッケージおよびその製造方法 |
JPH11186590A (ja) * | 1997-12-25 | 1999-07-09 | Rohm Co Ltd | チップ型led |
US6204523B1 (en) * | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
JP2001154005A (ja) * | 1999-11-25 | 2001-06-08 | Hitachi Cable Ltd | 高比屈折率差型光拡散板及び光照明用ガイド装置 |
JP2003110146A (ja) * | 2001-07-26 | 2003-04-11 | Matsushita Electric Works Ltd | 発光装置 |
JP4122791B2 (ja) * | 2002-02-14 | 2008-07-23 | 松下電工株式会社 | 発光装置 |
-
2004
- 2004-01-07 WO PCT/JP2004/000033 patent/WO2005004246A1/fr active Application Filing
- 2004-01-07 KR KR1020057024140A patent/KR20060031629A/ko not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101492350B1 (ko) * | 2010-09-27 | 2015-02-10 | 가부시끼가이샤 도시바 | GaN 베이스 반도체 결정 성장용 다결정 질화알루미늄 기재 및 그것을 이용한 GaN 베이스 반도체의 제조 방법 |
US9356101B2 (en) | 2010-09-27 | 2016-05-31 | Kabushiki Kaisha Toshiba | Polycrystalline aluminum nitride base material for crystal growth of GaN-base semiconductor and method for manufacturing GaN-base semiconductor using the same |
KR101278891B1 (ko) * | 2011-09-06 | 2013-06-26 | 공주대학교 산학협력단 | 투명 프릿 소재용 유리 조성물 |
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