KR20060031629A - 발광소자 탑재용 기판 및 발광소자 - Google Patents

발광소자 탑재용 기판 및 발광소자 Download PDF

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KR20060031629A
KR20060031629A KR1020057024140A KR20057024140A KR20060031629A KR 20060031629 A KR20060031629 A KR 20060031629A KR 1020057024140 A KR1020057024140 A KR 1020057024140A KR 20057024140 A KR20057024140 A KR 20057024140A KR 20060031629 A KR20060031629 A KR 20060031629A
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Prior art keywords
light emitting
substrate
emitting element
light
aluminum nitride
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KR1020057024140A
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English (en)
Korean (ko)
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켄이치로 미야하라
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켄이치로 미야하라
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Priority claimed from JP2003345536A external-priority patent/JP2005035864A/ja
Priority claimed from JP2003409959A external-priority patent/JP2005175039A/ja
Application filed by 켄이치로 미야하라 filed Critical 켄이치로 미야하라
Publication of KR20060031629A publication Critical patent/KR20060031629A/ko

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KR1020057024140A 2003-06-30 2004-01-07 발광소자 탑재용 기판 및 발광소자 KR20060031629A (ko)

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JP2003345536A JP2005035864A (ja) 2002-10-15 2003-10-03 発光素子搭載用基板
JP2003409959A JP2005175039A (ja) 2003-12-09 2003-12-09 発光素子搭載用基板及び発光素子
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Cited By (2)

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KR101278891B1 (ko) * 2011-09-06 2013-06-26 공주대학교 산학협력단 투명 프릿 소재용 유리 조성물
KR101492350B1 (ko) * 2010-09-27 2015-02-10 가부시끼가이샤 도시바 GaN 베이스 반도체 결정 성장용 다결정 질화알루미늄 기재 및 그것을 이용한 GaN 베이스 반도체의 제조 방법

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TWI449137B (zh) * 2006-03-23 2014-08-11 Ceramtec Ag 構件或電路用的攜帶體
JP2012072011A (ja) * 2010-09-28 2012-04-12 Sumitomo Electric Ind Ltd セラミックス複合材料および半導体層貼り合わせ基板用の下地基板の製造方法
JP4928013B1 (ja) * 2010-12-28 2012-05-09 パナソニック株式会社 発光装置、発光モジュール及びランプ
WO2012090356A1 (fr) * 2010-12-28 2012-07-05 パナソニック株式会社 Dispositif électroluminescent, module électroluminescent et lampe
CN104170106A (zh) 2012-03-15 2014-11-26 松下电器产业株式会社 Led用基板、led模块和led灯
EP2933847B1 (fr) 2012-12-14 2019-05-22 NGK Insulators, Ltd. Élément à émission de lumière de surface utilisant un substrat en oxyde de zinc
CN114315112A (zh) * 2021-12-30 2022-04-12 赵宇琪 一种玻璃热压成型单元

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JPS60130176A (ja) * 1983-12-17 1985-07-11 Toshiba Corp 半導体発光装置
JPH05335627A (ja) * 1992-05-27 1993-12-17 Kyocera Corp 発光素子収納用パッケージ
JP3832877B2 (ja) * 1995-07-26 2006-10-11 日亜化学工業株式会社 セラミックスledパッケージおよびその製造方法
JPH11186590A (ja) * 1997-12-25 1999-07-09 Rohm Co Ltd チップ型led
US6204523B1 (en) * 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
JP2001154005A (ja) * 1999-11-25 2001-06-08 Hitachi Cable Ltd 高比屈折率差型光拡散板及び光照明用ガイド装置
JP2003110146A (ja) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd 発光装置
JP4122791B2 (ja) * 2002-02-14 2008-07-23 松下電工株式会社 発光装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101492350B1 (ko) * 2010-09-27 2015-02-10 가부시끼가이샤 도시바 GaN 베이스 반도체 결정 성장용 다결정 질화알루미늄 기재 및 그것을 이용한 GaN 베이스 반도체의 제조 방법
US9356101B2 (en) 2010-09-27 2016-05-31 Kabushiki Kaisha Toshiba Polycrystalline aluminum nitride base material for crystal growth of GaN-base semiconductor and method for manufacturing GaN-base semiconductor using the same
KR101278891B1 (ko) * 2011-09-06 2013-06-26 공주대학교 산학협력단 투명 프릿 소재용 유리 조성물

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