KR20050062540A - 포토레지스트로서 유용한 플루오르화 중합체 및 마이크로리소그래피법 - Google Patents

포토레지스트로서 유용한 플루오르화 중합체 및 마이크로리소그래피법 Download PDF

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Publication number
KR20050062540A
KR20050062540A KR1020057002754A KR20057002754A KR20050062540A KR 20050062540 A KR20050062540 A KR 20050062540A KR 1020057002754 A KR1020057002754 A KR 1020057002754A KR 20057002754 A KR20057002754 A KR 20057002754A KR 20050062540 A KR20050062540 A KR 20050062540A
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KR
South Korea
Prior art keywords
fluorine
containing copolymer
group
ethylenically unsaturated
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057002754A
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English (en)
Korean (ko)
Inventor
앤드류 에드워드 페이링
프랭크 엘. 3세 샤트
윌리엄 브라운 판햄
제랄드 펠드만
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
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Publication of KR20050062540A publication Critical patent/KR20050062540A/ko
Withdrawn legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F14/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F14/18Monomers containing fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F214/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
    • C08F214/18Monomers containing fluorine
    • C08F214/26Tetrafluoroethene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/22Esters containing halogen
    • C08F220/24Esters containing halogen containing perhaloalkyl radicals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • C08F220/26Esters containing oxygen in addition to the carboxy oxygen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F232/00Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F232/08Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00Chemical modification by after-treatment
    • C08F8/12Hydrolysis
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2800/00Copolymer characterised by the proportions of the comonomers expressed
    • C08F2800/20Copolymer characterised by the proportions of the comonomers expressed as weight or mass percentages

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
KR1020057002754A 2002-08-19 2003-08-19 포토레지스트로서 유용한 플루오르화 중합체 및 마이크로리소그래피법 Withdrawn KR20050062540A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US40437402P 2002-08-19 2002-08-19
US60/404,374 2002-08-19

Publications (1)

Publication Number Publication Date
KR20050062540A true KR20050062540A (ko) 2005-06-23

Family

ID=31888358

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057002754A Withdrawn KR20050062540A (ko) 2002-08-19 2003-08-19 포토레지스트로서 유용한 플루오르화 중합체 및 마이크로리소그래피법

Country Status (10)

Country Link
US (1) US7312287B2 (https=)
EP (1) EP1551886B1 (https=)
JP (1) JP4578971B2 (https=)
KR (1) KR20050062540A (https=)
CN (1) CN1675262A (https=)
AT (1) ATE408173T1 (https=)
AU (1) AU2003259951A1 (https=)
DE (1) DE60323521D1 (https=)
TW (1) TW200403257A (https=)
WO (1) WO2004016664A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003259951A1 (en) * 2002-08-19 2004-03-03 E.I. Du Pont De Nemours And Company Fluorinated polymers useful as photoresists, and processes for microlithography
JP5560854B2 (ja) * 2010-03-31 2014-07-30 Jsr株式会社 感放射線性樹脂組成物およびそれに用いる重合体
CN104945795B (zh) * 2010-11-24 2019-05-21 Agc株式会社 机动车用密封圈或者工业气体压缩机用密封圈或滑动构件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5229473A (en) * 1989-07-07 1993-07-20 Daikin Industries Ltd. Fluorine-containing copolymer and method of preparing the same
JP4034896B2 (ja) * 1997-11-19 2008-01-16 松下電器産業株式会社 レジスト組成物及びこれを用いたパターン形成方法
JPH11265067A (ja) * 1998-01-16 1999-09-28 Jsr Corp 感放射線性樹脂組成物
IL141803A0 (en) * 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography
HK1047797B (zh) * 1999-05-04 2006-07-28 纳幕尔杜邦公司 氟化聚合物,光刻胶和用於显微光刻的方法
KR100535149B1 (ko) * 1999-08-17 2005-12-07 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
JP4240786B2 (ja) * 1999-09-17 2009-03-18 Jsr株式会社 感放射線性樹脂組成物
DE60116484T2 (de) * 2000-05-05 2006-08-24 E.I. Dupont De Nemours And Co., Wilmington Copolymere für photoresistzusammensetzungen und verfahren zur herstellung
EP1246013A3 (en) * 2001-03-30 2003-11-19 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6737215B2 (en) * 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
AU2003259951A1 (en) * 2002-08-19 2004-03-03 E.I. Du Pont De Nemours And Company Fluorinated polymers useful as photoresists, and processes for microlithography

Also Published As

Publication number Publication date
JP4578971B2 (ja) 2010-11-10
DE60323521D1 (de) 2008-10-23
ATE408173T1 (de) 2008-09-15
US7312287B2 (en) 2007-12-25
EP1551886B1 (en) 2008-09-10
TW200403257A (en) 2004-03-01
CN1675262A (zh) 2005-09-28
JP2005536589A (ja) 2005-12-02
EP1551886A1 (en) 2005-07-13
WO2004016664A1 (en) 2004-02-26
AU2003259951A1 (en) 2004-03-03
EP1551886A4 (en) 2007-11-14
US20060166129A1 (en) 2006-07-27

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PA0105 International application

Patent event date: 20050218

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid