KR20050059736A - 반도체소자의 제조방법 - Google Patents
반도체소자의 제조방법 Download PDFInfo
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- KR20050059736A KR20050059736A KR1020030091451A KR20030091451A KR20050059736A KR 20050059736 A KR20050059736 A KR 20050059736A KR 1020030091451 A KR1020030091451 A KR 1020030091451A KR 20030091451 A KR20030091451 A KR 20030091451A KR 20050059736 A KR20050059736 A KR 20050059736A
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- Prior art keywords
- film
- contact portion
- transistor
- tungsten
- semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76883—Post-treatment or after-treatment of the conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823871—Complementary field-effect transistors, e.g. CMOS interconnection or wiring or contact manufacturing related aspects
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (14)
- 트랜지스터가 형성된 실리콘기판상에 층간절연막을 형성하는 단계;상기 층간절연막을 선택적으로 제거하여 트랜지스터 콘택부와 쓰루홀용 콘택부를 형성하는 단계;상기 전체 구조의 상면에 텅스텐막을 형성하여 상기 트랜지스터부 콘택부를 완전매립하고 쓰루홀용 콘택부의 일정부분을 매립하는 단계;상기 텅스텐막상에 구리막을 형성하여 상기 쓰루홀용 콘택부를 완전매립하는 단계; 및상기 구리막과 텅스텐막을 트랜지스터 콘택부와 쓰루홀용 콘택부에 남도록 선택적으로 제거하여 상기 트랜지스터 콘택부와 쓰루홀 콘택부에 트랜지스터 콘택플러그와 쓰루홀 콘택플러그를 각각 형성하는 단계를 포함하여 구성되는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 쓰루홀 콘택부는 트랜지스터 콘택부를 형성하기 전에 형성하는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 텅스텐막을 형성하기 전단계로 트랜지스터 콘택부와 쓰루홀 콘택부표면에 텅스텐 라이너막을 형성하는 단계를 더 포함하는 것을 특징 으로 하는 반도체소자의 제조방법.
- 제3항에 있어서, 상기 텅스텐라이너막으로는 Ti, TiN, TiW 또는 이들 적층막을 이용하거나 SiNx막과 SiOx막의 적층구조를 이용하는 것을 특징으로하는 반도체소자의 제조방법.
- 제4항에 있어서, 상기 SiNx막과 SiOx막은 스텝커버리지의 30%이상으로 각각 100Å 내지 1000Å 두께로 형성하는 것을 특징으로하는 반도체소자의 제조방법.
- 제3항에 있어서, 상기 텅스텐라이너막은 100Å∼1000Å두께로 형성하는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 텅스텐막은 0.1μm ∼1.5μm 두께로 형성하는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 구리막을 형성하기 전단계로 상기 텅스텐막을 표면처리하는 단계를 더 포함하는 것을 특징으로하는 특징으로하는 반도체소자의 제조방법.
- 제8항에 있어서, 상기 표면처리공정은 Ar, H2, NH3, He 또는 이들의 혼합가스를 이용하여 5초이상 플라즈마 처리하는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 구리막은 전기도금 또는 선택적 무전해 도금법으로 형성하는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 구리막은 0.2 내지 5 μm 두께로 형성하는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 구리막을 형성한후 열처리하는 단계를 더 포함하는 것을 특징으로하는 반도체소자의 제조방법.
- 제12항에 있어서, 상기 열처리공정은 Ar, He, H2 또는 이들의 혼합가스 분위기에서 100℃∼350℃ 온도범위에서 30분이상 열처리하거나, 150∼600℃ 온도범위에서 5분이하동안 급속열처리하는 것을 특징으로하는 반도체소자의 제조방법.
- 제1항에 있어서, 상기 구리막과 텅스텐막을 선택적으로 제거하는 공정은 CMP공정에 의해 진행하는 것을 특징으로하는 반도체소자의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020030091451A KR101051950B1 (ko) | 2003-12-15 | 2003-12-15 | 반도체소자의 제조방법 |
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KR1020030091451A KR101051950B1 (ko) | 2003-12-15 | 2003-12-15 | 반도체소자의 제조방법 |
Publications (2)
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KR20050059736A true KR20050059736A (ko) | 2005-06-21 |
KR101051950B1 KR101051950B1 (ko) | 2011-07-26 |
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KR1020030091451A KR101051950B1 (ko) | 2003-12-15 | 2003-12-15 | 반도체소자의 제조방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8581334B2 (en) | 2009-11-09 | 2013-11-12 | Samsung Electronics Co., Ltd. | Via structures and semiconductor devices having the via structures |
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KR100309809B1 (ko) * | 1998-12-28 | 2001-11-15 | 박종섭 | 반도체소자의구리금속배선형성방법 |
SG87187A1 (en) * | 1999-10-18 | 2002-03-19 | Applied Materials Inc | Pvd-imp tungsten and tungsten nitride as a liner, barrier and/or seed layer for tungsten, aluminium and copper applications |
JP2002190521A (ja) * | 2000-10-12 | 2002-07-05 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100691940B1 (ko) * | 2000-12-30 | 2007-03-08 | 주식회사 하이닉스반도체 | 반도체소자의 배선 및 그 형성방법 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8581334B2 (en) | 2009-11-09 | 2013-11-12 | Samsung Electronics Co., Ltd. | Via structures and semiconductor devices having the via structures |
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