KR20050056200A - 임계전압을 프로그래밍할 수 있는 ｄｍｏｓ 소자 - Google Patents
임계전압을 프로그래밍할 수 있는 ｄｍｏｓ 소자 Download PDFInfo
- Publication number
- KR20050056200A KR20050056200A KR1020057002475A KR20057002475A KR20050056200A KR 20050056200 A KR20050056200 A KR 20050056200A KR 1020057002475 A KR1020057002475 A KR 1020057002475A KR 20057002475 A KR20057002475 A KR 20057002475A KR 20050056200 A KR20050056200 A KR 20050056200A
- Authority
- KR
- South Korea
- Prior art keywords
- dmos
- floating gate
- programming
- electrode
- dielectric
- Prior art date
Links
- 230000005641 tunneling Effects 0.000 claims abstract description 83
- 239000002800 charge carrier Substances 0.000 claims abstract description 15
- 238000009792 diffusion process Methods 0.000 claims description 126
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 97
- 229910052751 metal Inorganic materials 0.000 claims description 91
- 239000002184 metal Substances 0.000 claims description 91
- 229920005591 polysilicon Polymers 0.000 claims description 91
- 238000000034 method Methods 0.000 claims description 85
- 210000000746 body region Anatomy 0.000 claims description 34
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000001465 metallisation Methods 0.000 claims description 16
- 230000001105 regulatory effect Effects 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000001276 controlling effect Effects 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 235000015067 sauces Nutrition 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 97
- 230000008569 process Effects 0.000 description 28
- 239000010408 film Substances 0.000 description 16
- 230000000873 masking effect Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910008065 Si-SiO Inorganic materials 0.000 description 1
- 229910006405 Si—SiO Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/218,010 | 2002-08-13 | ||
| US10/217,893 | 2002-08-13 | ||
| US10/218,010 US6734495B2 (en) | 2002-08-13 | 2002-08-13 | Two terminal programmable MOS-gated current source |
| US10/217,893 US6882573B2 (en) | 2002-08-13 | 2002-08-13 | DMOS device with a programmable threshold voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050056200A true KR20050056200A (ko) | 2005-06-14 |
Family
ID=31720179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057002475A KR20050056200A (ko) | 2002-08-13 | 2003-08-11 | 임계전압을 프로그래밍할 수 있는 ｄｍｏｓ 소자 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1550150A4 (de) |
| JP (1) | JP2005536048A (de) |
| KR (1) | KR20050056200A (de) |
| AU (1) | AU2003269956A1 (de) |
| TW (1) | TWI320232B (de) |
| WO (1) | WO2004015745A2 (de) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100881015B1 (ko) * | 2006-11-30 | 2009-01-30 | 동부일렉트로닉스 주식회사 | 반도체 소자 및 그 제조방법 |
| JP5272472B2 (ja) * | 2008-03-28 | 2013-08-28 | サンケン電気株式会社 | 半導体装置 |
| CN112864234B (zh) * | 2019-11-27 | 2022-04-15 | 苏州东微半导体股份有限公司 | Igbt功率器件 |
| CN112885827B (zh) * | 2019-11-29 | 2022-04-15 | 苏州东微半导体股份有限公司 | 一种半导体超结功率器件 |
| CN112885900B (zh) * | 2019-11-29 | 2022-04-15 | 苏州东微半导体股份有限公司 | 一种igbt器件 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3007892C2 (de) * | 1980-03-01 | 1982-06-09 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Floating-Gate-Speicherzelle |
| EP0205637A1 (de) * | 1985-06-25 | 1986-12-30 | Eaton Corporation | Bidirektionaler Leistungsfeldeffekttransistor mit gespeicherten Ladungen |
| JPS6129177A (ja) * | 1984-07-19 | 1986-02-10 | Seiko Instr & Electronics Ltd | 半導体不揮発性メモリ |
| US4589009A (en) * | 1984-10-09 | 1986-05-13 | The United States Of America As Represented By The Secretary Of The Army | Non-volatile piezoelectric memory transistor |
| JP2654384B2 (ja) * | 1987-09-18 | 1997-09-17 | 株式会社日立製作所 | 不揮発性メモリ付大電力半導体装置 |
| US5268319A (en) * | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
| JPH022177A (ja) * | 1988-06-14 | 1990-01-08 | Sharp Corp | 浮遊ゲート付電界効果型トランジスタ |
| US5313421A (en) * | 1992-01-14 | 1994-05-17 | Sundisk Corporation | EEPROM with split gate source side injection |
| JP3367255B2 (ja) * | 1995-03-08 | 2003-01-14 | 株式会社デンソー | 半導体装置及びその製造方法 |
| US5633518A (en) * | 1995-07-28 | 1997-05-27 | Zycad Corporation | Nonvolatile reprogrammable interconnect cell with FN tunneling and programming method thereof |
| JP3371708B2 (ja) * | 1996-08-22 | 2003-01-27 | ソニー株式会社 | 縦型電界効果トランジスタの製造方法 |
| EP0902438B1 (de) * | 1997-09-09 | 2005-10-26 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren zur Löschung und Programmierung eines Speichers in Kleinspannungs-Anwendungen und Anwendungen mit geringer Leistung |
| JP2000232171A (ja) * | 1999-02-10 | 2000-08-22 | Nec Kyushu Ltd | 半導体装置およびその製造方法 |
| JP2001035942A (ja) * | 1999-07-22 | 2001-02-09 | Toyota Central Res & Dev Lab Inc | 不揮発性半導体メモリ装置 |
| DE19941684B4 (de) * | 1999-09-01 | 2004-08-26 | Infineon Technologies Ag | Halbleiterbauelement als Verzögerungselement |
| JP4277381B2 (ja) * | 1999-09-21 | 2009-06-10 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
-
2003
- 2003-08-11 JP JP2004528026A patent/JP2005536048A/ja active Pending
- 2003-08-11 WO PCT/US2003/025108 patent/WO2004015745A2/en active Application Filing
- 2003-08-11 KR KR1020057002475A patent/KR20050056200A/ko active IP Right Grant
- 2003-08-11 AU AU2003269956A patent/AU2003269956A1/en not_active Abandoned
- 2003-08-11 EP EP03751848A patent/EP1550150A4/de not_active Withdrawn
- 2003-08-12 TW TW092122157A patent/TWI320232B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004015745A3 (en) | 2004-04-29 |
| AU2003269956A8 (en) | 2004-02-25 |
| TW200405571A (en) | 2004-04-01 |
| EP1550150A4 (de) | 2009-08-19 |
| WO2004015745A2 (en) | 2004-02-19 |
| JP2005536048A (ja) | 2005-11-24 |
| EP1550150A2 (de) | 2005-07-06 |
| AU2003269956A1 (en) | 2004-02-25 |
| TWI320232B (en) | 2010-02-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| NORF | Unpaid initial registration fee |