AU2003269956A1 - A dmos device with a programmable threshold voltage - Google Patents

A dmos device with a programmable threshold voltage

Info

Publication number
AU2003269956A1
AU2003269956A1 AU2003269956A AU2003269956A AU2003269956A1 AU 2003269956 A1 AU2003269956 A1 AU 2003269956A1 AU 2003269956 A AU2003269956 A AU 2003269956A AU 2003269956 A AU2003269956 A AU 2003269956A AU 2003269956 A1 AU2003269956 A1 AU 2003269956A1
Authority
AU
Australia
Prior art keywords
threshold voltage
programmable threshold
dmos device
dmos
programmable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003269956A
Other languages
English (en)
Other versions
AU2003269956A8 (en
Inventor
Richard A. Blanchard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Semiconductor Inc
Original Assignee
General Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/218,010 external-priority patent/US6734495B2/en
Priority claimed from US10/217,893 external-priority patent/US6882573B2/en
Application filed by General Semiconductor Inc filed Critical General Semiconductor Inc
Publication of AU2003269956A8 publication Critical patent/AU2003269956A8/xx
Publication of AU2003269956A1 publication Critical patent/AU2003269956A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AU2003269956A 2002-08-13 2003-08-11 A dmos device with a programmable threshold voltage Abandoned AU2003269956A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/218,010 2002-08-13
US10/217,893 2002-08-13
US10/218,010 US6734495B2 (en) 2002-08-13 2002-08-13 Two terminal programmable MOS-gated current source
US10/217,893 US6882573B2 (en) 2002-08-13 2002-08-13 DMOS device with a programmable threshold voltage
PCT/US2003/025108 WO2004015745A2 (en) 2002-08-13 2003-08-11 A dmos device with a programmable threshold voltage

Publications (2)

Publication Number Publication Date
AU2003269956A8 AU2003269956A8 (en) 2004-02-25
AU2003269956A1 true AU2003269956A1 (en) 2004-02-25

Family

ID=31720179

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003269956A Abandoned AU2003269956A1 (en) 2002-08-13 2003-08-11 A dmos device with a programmable threshold voltage

Country Status (6)

Country Link
EP (1) EP1550150A4 (de)
JP (1) JP2005536048A (de)
KR (1) KR20050056200A (de)
AU (1) AU2003269956A1 (de)
TW (1) TWI320232B (de)
WO (1) WO2004015745A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100881015B1 (ko) * 2006-11-30 2009-01-30 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
JP5272472B2 (ja) * 2008-03-28 2013-08-28 サンケン電気株式会社 半導体装置
CN112864234B (zh) * 2019-11-27 2022-04-15 苏州东微半导体股份有限公司 Igbt功率器件
CN112885827B (zh) * 2019-11-29 2022-04-15 苏州东微半导体股份有限公司 一种半导体超结功率器件
CN112885900B (zh) * 2019-11-29 2022-04-15 苏州东微半导体股份有限公司 一种igbt器件

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3007892C2 (de) * 1980-03-01 1982-06-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating-Gate-Speicherzelle
EP0205637A1 (de) * 1985-06-25 1986-12-30 Eaton Corporation Bidirektionaler Leistungsfeldeffekttransistor mit gespeicherten Ladungen
JPS6129177A (ja) * 1984-07-19 1986-02-10 Seiko Instr & Electronics Ltd 半導体不揮発性メモリ
US4589009A (en) * 1984-10-09 1986-05-13 The United States Of America As Represented By The Secretary Of The Army Non-volatile piezoelectric memory transistor
JP2654384B2 (ja) * 1987-09-18 1997-09-17 株式会社日立製作所 不揮発性メモリ付大電力半導体装置
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
JPH022177A (ja) * 1988-06-14 1990-01-08 Sharp Corp 浮遊ゲート付電界効果型トランジスタ
US5313421A (en) * 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
JP3367255B2 (ja) * 1995-03-08 2003-01-14 株式会社デンソー 半導体装置及びその製造方法
US5633518A (en) * 1995-07-28 1997-05-27 Zycad Corporation Nonvolatile reprogrammable interconnect cell with FN tunneling and programming method thereof
JP3371708B2 (ja) * 1996-08-22 2003-01-27 ソニー株式会社 縦型電界効果トランジスタの製造方法
EP0902438B1 (de) * 1997-09-09 2005-10-26 Interuniversitair Micro-Elektronica Centrum Vzw Verfahren zur Löschung und Programmierung eines Speichers in Kleinspannungs-Anwendungen und Anwendungen mit geringer Leistung
JP2000232171A (ja) * 1999-02-10 2000-08-22 Nec Kyushu Ltd 半導体装置およびその製造方法
JP2001035942A (ja) * 1999-07-22 2001-02-09 Toyota Central Res & Dev Lab Inc 不揮発性半導体メモリ装置
DE19941684B4 (de) * 1999-09-01 2004-08-26 Infineon Technologies Ag Halbleiterbauelement als Verzögerungselement
JP4277381B2 (ja) * 1999-09-21 2009-06-10 株式会社デンソー 炭化珪素半導体装置及びその製造方法

Also Published As

Publication number Publication date
WO2004015745A3 (en) 2004-04-29
AU2003269956A8 (en) 2004-02-25
KR20050056200A (ko) 2005-06-14
TW200405571A (en) 2004-04-01
EP1550150A4 (de) 2009-08-19
WO2004015745A2 (en) 2004-02-19
JP2005536048A (ja) 2005-11-24
EP1550150A2 (de) 2005-07-06
TWI320232B (en) 2010-02-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase