KR20050039719A - Ir 및 nir 조사를 이용한 유기 반도체, 전도체 또는칼라 필터의 층의 건조 방법 - Google Patents
Ir 및 nir 조사를 이용한 유기 반도체, 전도체 또는칼라 필터의 층의 건조 방법 Download PDFInfo
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- KR20050039719A KR20050039719A KR1020047006541A KR20047006541A KR20050039719A KR 20050039719 A KR20050039719 A KR 20050039719A KR 1020047006541 A KR1020047006541 A KR 1020047006541A KR 20047006541 A KR20047006541 A KR 20047006541A KR 20050039719 A KR20050039719 A KR 20050039719A
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- Prior art keywords
- organic
- drying
- irradiation
- color filter
- solvent
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- XHONYVFDZSPELQ-UHFFFAOYSA-N 1-methoxy-3-(trifluoromethyl)benzene Chemical compound COC1=CC=CC(C(F)(F)F)=C1 XHONYVFDZSPELQ-UHFFFAOYSA-N 0.000 description 1
- UJCFZCTTZWHRNL-UHFFFAOYSA-N 2,4-Dimethylanisole Chemical compound COC1=CC=C(C)C=C1C UJCFZCTTZWHRNL-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
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- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 1
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- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
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- 229920000515 polycarbonate Polymers 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- GQHWSLKNULCZGI-UHFFFAOYSA-N trifluoromethoxybenzene Chemical compound FC(F)(F)OC1=CC=CC=C1 GQHWSLKNULCZGI-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims (14)
- 하기의 단계를 포함하며:(a) 하나 이상의 유기 반도체 또는 유기 전도체 또는 유기 칼라 필터를 포함하는 용액 또는 분산액의 기판 상으로의 침착 단계,(b) IR 및/또는 NIR 조사에 의해서 단계 (a) 에 따라 제조된 습윤 필름을 건조시키는 단계;단계 (b) 에서, 80% 이상의 조사 에너지가 700 내지 2000 nm 의 범위내에 존재하는 조사가 사용되는 것을 특징으로 하는, 유기 반도체, 유기 전도체 또는 유기 칼라 필터의 박층의 제조 방법.
- 제 1 항에 있어서, 사용된 조사의 조사 강도가 75 kW/㎡ 초과인 것을 특징으로 하는 방법.
- 제 1 항 또는 제 2 항에 있어서, 건조된 고체 필름 층이 1% (질량과 관련하여) 미만의 용매를 함유하는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서, 습윤 필름의 건조가 30 초 미만으로 수행되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서, 건조 (단계 b) 가 코팅 (단계 a) 직후에 수행되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 4 항 중 어느 한 항에 있어서, 건조 (단계 b) 가 코팅 (단계 a) 동안에 이미 개시되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서, 유기 전도체, 반도체 또는 칼라 필터를 함유하는 용액 또는 분산액이 비점이 120℃ 이상인 하나 이상의 고비등 용매를 포함하는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서, 유기 전도체, 반도체 또는 칼라 필터를 함유하는 용액 또는 분산액이 증발 엔탈피가 1000 J/g 초과인 하나 이상의 난휘발성 용매를 포함하는 것을 특징으로 하는 방법.
- 80% 이상의 조사 에너지가 700 내지 2000 nm 의 범위내에 존재하는 IR/NIR 조사를 이용하는, 유기 반도체, 유기 전도체 또는 유기 칼라 필터의 건조된 층의 후처리 방법.
- 제 9 항에 있어서, 사용된 조사의 조사 강도가 75 kW/㎡ 초과인 것을 특징으로 하는 방법.
- 제 9 항 또는 제 10 항에 있어서, 건조된 고체 필름 층이, 후처리 전에, 1% (질량과 관련하여) 초과의 용매 함량을 포함하는 것을 특징으로 하는 방법.
- 제 9 항 내지 제 11 항 중 어느 한 항에 있어서, 후처리된 고체 필름 층이 1% (질량과 관련하여) 미만의 용매를 포함하는 것을 특징으로 하는 방법.
- 제 9 항 내지 제 12 항 중 어느 한 항에 있어서, 후처리 기간이 30 초 미만인 것을 특징으로 하는 방법.
- 유기 발광 다이오드 (PLED), 유기 집적 회로 (O-IC), 유기 전계 트랜지스터 (OFET), 유기 박막 트랜지스터 (OTFT), 유기 태양 전지 (O-SC), 유기 레이저 다이오드 (O-레이저), 액정 디스플레이용 유기 칼라 필터 또는 유기 광수용체의 제조를 위한, 제 1 항 내지 제 8 항 중 어느 한 항에 따른 및/또는 제 9 항 내지 제 13 항 중 어느 한 항에 따른 하나 이상의 방법의 용도.
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DE10153445A DE10153445A1 (de) | 2001-10-30 | 2001-10-30 | Trocknungsverfahren |
DE10153445.0 | 2001-10-30 |
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KR20050039719A true KR20050039719A (ko) | 2005-04-29 |
KR100907208B1 KR100907208B1 (ko) | 2009-07-10 |
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KR1020047006541A KR100907208B1 (ko) | 2001-10-30 | 2002-10-25 | Ir 및 nir 조사를 이용한 유기 반도체, 전도체 또는칼라 필터의 층의 건조 방법 |
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US (1) | US20050072021A1 (ko) |
EP (1) | EP1444740B1 (ko) |
JP (1) | JP4588999B2 (ko) |
KR (1) | KR100907208B1 (ko) |
CN (1) | CN1582507A (ko) |
DE (2) | DE10153445A1 (ko) |
WO (1) | WO2003038923A1 (ko) |
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JP2007049117A (ja) * | 2005-07-13 | 2007-02-22 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
JP2007048732A (ja) * | 2005-07-15 | 2007-02-22 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
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JP2007042727A (ja) * | 2005-08-01 | 2007-02-15 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
JP2007042728A (ja) * | 2005-08-01 | 2007-02-15 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンス素子、表示装置及び照明装置 |
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2001
- 2001-10-30 DE DE10153445A patent/DE10153445A1/de not_active Withdrawn
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2002
- 2002-10-25 WO PCT/EP2002/011941 patent/WO2003038923A1/de active IP Right Grant
- 2002-10-25 CN CNA028219082A patent/CN1582507A/zh active Pending
- 2002-10-25 EP EP02783004A patent/EP1444740B1/de not_active Expired - Fee Related
- 2002-10-25 US US10/493,814 patent/US20050072021A1/en not_active Abandoned
- 2002-10-25 JP JP2003541077A patent/JP4588999B2/ja not_active Expired - Fee Related
- 2002-10-25 KR KR1020047006541A patent/KR100907208B1/ko active IP Right Grant
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Publication number | Publication date |
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DE10153445A1 (de) | 2003-05-22 |
EP1444740A1 (de) | 2004-08-11 |
CN1582507A (zh) | 2005-02-16 |
EP1444740B1 (de) | 2006-11-29 |
WO2003038923A1 (de) | 2003-05-08 |
JP4588999B2 (ja) | 2010-12-01 |
DE50208866D1 (de) | 2007-01-11 |
JP2005508515A (ja) | 2005-03-31 |
US20050072021A1 (en) | 2005-04-07 |
KR100907208B1 (ko) | 2009-07-10 |
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