KR20040094706A - 이중 파장을 이용한 자기정렬 패턴 형성 방법 - Google Patents

이중 파장을 이용한 자기정렬 패턴 형성 방법 Download PDF

Info

Publication number
KR20040094706A
KR20040094706A KR10-2004-7012948A KR20047012948A KR20040094706A KR 20040094706 A KR20040094706 A KR 20040094706A KR 20047012948 A KR20047012948 A KR 20047012948A KR 20040094706 A KR20040094706 A KR 20040094706A
Authority
KR
South Korea
Prior art keywords
wavelength
radiation
layer
photoresist
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7012948A
Other languages
English (en)
Korean (ko)
Inventor
오코로운얀우우조딘마
보텔리아르멘도씨.
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20040094706A publication Critical patent/KR20040094706A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR10-2004-7012948A 2002-02-27 2003-02-21 이중 파장을 이용한 자기정렬 패턴 형성 방법 Ceased KR20040094706A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/083,914 2002-02-27
US10/083,914 US6764808B2 (en) 2002-02-27 2002-02-27 Self-aligned pattern formation using wavelenghts
PCT/US2003/004960 WO2003073165A2 (en) 2002-02-27 2003-02-21 Self-aligned pattern formation using dual wavelengths

Publications (1)

Publication Number Publication Date
KR20040094706A true KR20040094706A (ko) 2004-11-10

Family

ID=27753386

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7012948A Ceased KR20040094706A (ko) 2002-02-27 2003-02-21 이중 파장을 이용한 자기정렬 패턴 형성 방법

Country Status (9)

Country Link
US (1) US6764808B2 (https=)
EP (1) EP1478978B1 (https=)
JP (1) JP2005519456A (https=)
KR (1) KR20040094706A (https=)
CN (1) CN1299166C (https=)
AU (1) AU2003211152A1 (https=)
DE (1) DE60329371D1 (https=)
TW (1) TWI278013B (https=)
WO (1) WO2003073165A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101023077B1 (ko) * 2008-10-27 2011-03-24 주식회사 동부하이텍 마스크 패턴 형성 방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138105A1 (de) * 2001-08-03 2003-02-27 Infineon Technologies Ag Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks
US7501230B2 (en) * 2002-11-04 2009-03-10 Meagley Robert P Photoactive adhesion promoter
DE10309266B3 (de) * 2003-03-04 2005-01-13 Infineon Technologies Ag Verfahren zum Bilden einer Öffnung einer Licht absorbierenden Schicht auf einer Maske
DE10310781A1 (de) * 2003-03-12 2004-09-30 Infineon Technologies Ag Verfahren zum Betreiben eines Mikroprozessors und eine Mikroprozessoranordnung
US7265366B2 (en) * 2004-03-31 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006085741A1 (en) * 2005-02-09 2006-08-17 Stichting Dutch Polymer Institute Process for preparing a polymeric relief structure
US7816072B2 (en) * 2005-05-02 2010-10-19 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US20070166649A1 (en) * 2006-01-18 2007-07-19 Cheng-Hung Yu Method of forming a micro device
CN100465666C (zh) * 2006-01-24 2009-03-04 联华电子股份有限公司 微元件制作方法
JP2007287928A (ja) * 2006-04-17 2007-11-01 Nec Electronics Corp 半導体集積回路およびその製造方法ならびにマスク
JP4660826B2 (ja) * 2006-08-18 2011-03-30 山栄化学株式会社 レジストパターンの形成方法
US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
US9977339B2 (en) 2014-01-27 2018-05-22 Tokyo Electron Limited System and method for shifting critical dimensions of patterned films
US9645495B2 (en) 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
US11294273B2 (en) * 2019-10-25 2022-04-05 Innolux Corporation Mask substrate and method for forming mask substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098922A3 (en) 1982-07-13 1986-02-12 International Business Machines Corporation Process for selectively generating positive and negative resist patterns from a single exposure pattern
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
NL8500455A (nl) 1985-02-18 1986-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij een fotolakmasker wordt gevormd met behulp van een twee-laags-laksysteem.
US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
JPH02269353A (ja) 1988-10-28 1990-11-02 Hewlett Packard Co <Hp> フォトリソグラフィーによる半導体の製造方法
JP3192879B2 (ja) * 1994-07-28 2001-07-30 トヨタ自動車株式会社 セラミックス製バタフライ弁およびその製造方法
JPH09319097A (ja) * 1996-01-16 1997-12-12 Sumitomo Chem Co Ltd レジストパターンの形成方法
JP3373147B2 (ja) * 1998-02-23 2003-02-04 シャープ株式会社 フォトレジスト膜及びそのパターン形成方法
FR2812450B1 (fr) 2000-07-26 2003-01-10 France Telecom Resine, bi-couche de resine pour photolithographie dans l'extreme ultraviolet (euv) et procede de photolithogravure en extreme ultraviolet (euv)
WO2003095026A1 (en) 2002-05-13 2003-11-20 Pflueger D Russell Spinal disc therapy system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101023077B1 (ko) * 2008-10-27 2011-03-24 주식회사 동부하이텍 마스크 패턴 형성 방법

Also Published As

Publication number Publication date
EP1478978B1 (en) 2009-09-23
JP2005519456A (ja) 2005-06-30
CN1620634A (zh) 2005-05-25
TW200303573A (en) 2003-09-01
AU2003211152A1 (en) 2003-09-09
DE60329371D1 (de) 2009-11-05
CN1299166C (zh) 2007-02-07
TWI278013B (en) 2007-04-01
WO2003073165A2 (en) 2003-09-04
US6764808B2 (en) 2004-07-20
US20030162135A1 (en) 2003-08-28
EP1478978A2 (en) 2004-11-24
WO2003073165A3 (en) 2003-10-16

Similar Documents

Publication Publication Date Title
US9012132B2 (en) Coating material and method for photolithography
KR100639680B1 (ko) 반도체 소자의 미세 패턴 형성방법
US7829269B1 (en) Dual tone development with plural photo-acid generators in lithographic applications
JP3355239B2 (ja) パターンの形成方法
US5455145A (en) Method of manufacturing double layer resist pattern and double layer resist structure
KR20040094706A (ko) 이중 파장을 이용한 자기정렬 패턴 형성 방법
KR20000073111A (ko) 포토레지스트 패턴의 형성방법
KR100396193B1 (ko) 패턴의 형성방법
US7662542B2 (en) Pattern forming method and semiconductor device manufacturing method
JP3638266B2 (ja) 半導体装置の製造方法
KR100261162B1 (ko) 반도체소자의 패터닝 방법
US20100055624A1 (en) Method of patterning a substrate using dual tone development
US6514874B1 (en) Method of using controlled resist footing on silicon nitride substrate for smaller spacing of integrated circuit device features
JPH11167205A (ja) 化学増幅ポジ型レジスト
KR940011204B1 (ko) 미세패턴 형성방법
KR20020000351A (ko) 반도체소자의 미세패턴 형성방법
JP2004045969A (ja) パターン形成材料及びパターン形成方法
KR100772784B1 (ko) 이유브이 노광 공정용 위상반전 마스크 및 그 제조 방법
KR100596276B1 (ko) 감광막 패턴 형성 방법
CN118192158A (zh) 光刻膜层堆叠及光刻方法
US20030073039A1 (en) Method of forming a patterned photoresist with a non-distorted profile
JPH07142365A (ja) 多層レジストパターンの形成方法
WO2010025198A1 (en) Method of patterning a substrate using dual tone development
JPH05291130A (ja) 多層レジスト法及び半導体装置の製造方法
JPH11119433A (ja) ＡｒＦ用化学増幅系ネガ型レジスト

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J121 Written withdrawal of request for trial
PJ1201 Withdrawal of trial

St.27 status event code: A-3-3-V10-V13-apl-PJ1201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000