DE60329371D1 - Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen - Google Patents

Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen

Info

Publication number
DE60329371D1
DE60329371D1 DE60329371T DE60329371T DE60329371D1 DE 60329371 D1 DE60329371 D1 DE 60329371D1 DE 60329371 T DE60329371 T DE 60329371T DE 60329371 T DE60329371 T DE 60329371T DE 60329371 D1 DE60329371 D1 DE 60329371D1
Authority
DE
Germany
Prior art keywords
orienting
education
wavelengths
self
structural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60329371T
Other languages
English (en)
Inventor
Uzodinma Okoroanyanwu
Armando C Bottelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE60329371D1 publication Critical patent/DE60329371D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60329371T 2002-02-27 2003-02-21 Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen Expired - Lifetime DE60329371D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/083,914 US6764808B2 (en) 2002-02-27 2002-02-27 Self-aligned pattern formation using wavelenghts
PCT/US2003/004960 WO2003073165A2 (en) 2002-02-27 2003-02-21 Self-aligned pattern formation using dual wavelengths

Publications (1)

Publication Number Publication Date
DE60329371D1 true DE60329371D1 (de) 2009-11-05

Family

ID=27753386

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60329371T Expired - Lifetime DE60329371D1 (de) 2002-02-27 2003-02-21 Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen

Country Status (9)

Country Link
US (1) US6764808B2 (de)
EP (1) EP1478978B1 (de)
JP (1) JP2005519456A (de)
KR (1) KR20040094706A (de)
CN (1) CN1299166C (de)
AU (1) AU2003211152A1 (de)
DE (1) DE60329371D1 (de)
TW (1) TWI278013B (de)
WO (1) WO2003073165A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138105A1 (de) * 2001-08-03 2003-02-27 Infineon Technologies Ag Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks
US7501230B2 (en) * 2002-11-04 2009-03-10 Meagley Robert P Photoactive adhesion promoter
DE10309266B3 (de) * 2003-03-04 2005-01-13 Infineon Technologies Ag Verfahren zum Bilden einer Öffnung einer Licht absorbierenden Schicht auf einer Maske
DE10310781A1 (de) * 2003-03-12 2004-09-30 Infineon Technologies Ag Verfahren zum Betreiben eines Mikroprozessors und eine Mikroprozessoranordnung
US7265366B2 (en) * 2004-03-31 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006085741A1 (en) * 2005-02-09 2006-08-17 Stichting Dutch Polymer Institute Process for preparing a polymeric relief structure
WO2006120896A1 (ja) * 2005-05-02 2006-11-16 Tokyo Ohka Kogyo Co., Ltd. ポジ型レジスト組成物およびレジストパターン形成方法
US20070166649A1 (en) * 2006-01-18 2007-07-19 Cheng-Hung Yu Method of forming a micro device
CN100465666C (zh) * 2006-01-24 2009-03-04 联华电子股份有限公司 微元件制作方法
JP2007287928A (ja) * 2006-04-17 2007-11-01 Nec Electronics Corp 半導体集積回路およびその製造方法ならびにマスク
JP4660826B2 (ja) * 2006-08-18 2011-03-30 山栄化学株式会社 レジストパターンの形成方法
US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
KR101023077B1 (ko) * 2008-10-27 2011-03-24 주식회사 동부하이텍 마스크 패턴 형성 방법
KR101888287B1 (ko) 2014-01-27 2018-08-13 도쿄엘렉트론가부시키가이샤 패터닝된 필름의 임계 치수를 시프팅하기 위한 시스템 및 방법
US9645495B2 (en) 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
US11294273B2 (en) * 2019-10-25 2022-04-05 Innolux Corporation Mask substrate and method for forming mask substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098922A3 (de) 1982-07-13 1986-02-12 International Business Machines Corporation Einbelichtungsverfahren zur Herstellung von positiven und Resistbildern
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
NL8500455A (nl) 1985-02-18 1986-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij een fotolakmasker wordt gevormd met behulp van een twee-laags-laksysteem.
US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
JPH02269353A (ja) 1988-10-28 1990-11-02 Hewlett Packard Co <Hp> フォトリソグラフィーによる半導体の製造方法
JP3192879B2 (ja) * 1994-07-28 2001-07-30 トヨタ自動車株式会社 セラミックス製バタフライ弁およびその製造方法
JPH09319097A (ja) * 1996-01-16 1997-12-12 Sumitomo Chem Co Ltd レジストパターンの形成方法
JP3373147B2 (ja) * 1998-02-23 2003-02-04 シャープ株式会社 フォトレジスト膜及びそのパターン形成方法
FR2812450B1 (fr) * 2000-07-26 2003-01-10 France Telecom Resine, bi-couche de resine pour photolithographie dans l'extreme ultraviolet (euv) et procede de photolithogravure en extreme ultraviolet (euv)
AU2003229045A1 (en) 2002-05-13 2003-11-11 D. Russell Pflueger Spinal disc therapy system

Also Published As

Publication number Publication date
US6764808B2 (en) 2004-07-20
JP2005519456A (ja) 2005-06-30
WO2003073165A3 (en) 2003-10-16
EP1478978B1 (de) 2009-09-23
EP1478978A2 (de) 2004-11-24
TWI278013B (en) 2007-04-01
WO2003073165A2 (en) 2003-09-04
AU2003211152A1 (en) 2003-09-09
CN1620634A (zh) 2005-05-25
TW200303573A (en) 2003-09-01
US20030162135A1 (en) 2003-08-28
KR20040094706A (ko) 2004-11-10
CN1299166C (zh) 2007-02-07

Similar Documents

Publication Publication Date Title
DE60329371D1 (de) Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen
DE60230235D1 (de) Lichtstrahlausrichtungssystem
DK1650174T3 (da) Optisk fiber
DE60318905D1 (de) Optisches Element
DE60224500D1 (de) WDM-Überwachungssystem
DE50311534D1 (de) Gewebeband-einrichtung
DK1546304T3 (da) Forbedret produktion af bakteriestammer
DE60308464D1 (de) Optischer Zwischenverstärker
DE602005011364D1 (de) Faserlaser
DE602005006085D1 (de) Optisches System mit drei Sichtfeldern unter Verwendung von zwei reflektierenden optischen Modulen
DK1531666T3 (da) Inducerbart eukaryot-ekspressionssystem
DE60334988D1 (de) Faserlasersystem mit vielfachen oeffnungen
DE10393477D2 (de) Hohlfaser-Modul
NO20030600L (no) Undersjoisk produksjonssystem
DE60333154D1 (de) Hohlfasermembran-Modul
DE60309868D1 (de) Faserlasereinheit
DE60322449D1 (de) Steuermodul
DE60336077D1 (de) Optischer sensor
DE60331395D1 (de) CO2 Inkubator
DE60330884D1 (de) Optisch angesteuerter Mikro-aktuator
NO20025512D0 (no) Bygningsmodul
DE60217410D1 (de) Optisches element
DE60304800D1 (de) Optischer Verstärker
DE60319318D1 (de) Optischer Multi-Demultiplexer
DE60319891D1 (de) Optischer Verstärker

Legal Events

Date Code Title Description
8364 No opposition during term of opposition