DE60329371D1 - Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen - Google Patents

Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen

Info

Publication number
DE60329371D1
DE60329371D1 DE60329371T DE60329371T DE60329371D1 DE 60329371 D1 DE60329371 D1 DE 60329371D1 DE 60329371 T DE60329371 T DE 60329371T DE 60329371 T DE60329371 T DE 60329371T DE 60329371 D1 DE60329371 D1 DE 60329371D1
Authority
DE
Germany
Prior art keywords
orienting
education
wavelengths
self
structural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60329371T
Other languages
German (de)
English (en)
Inventor
Uzodinma Okoroanyanwu
Armando C Bottelli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE60329371D1 publication Critical patent/DE60329371D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE60329371T 2002-02-27 2003-02-21 Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen Expired - Lifetime DE60329371D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/083,914 US6764808B2 (en) 2002-02-27 2002-02-27 Self-aligned pattern formation using wavelenghts
PCT/US2003/004960 WO2003073165A2 (en) 2002-02-27 2003-02-21 Self-aligned pattern formation using dual wavelengths

Publications (1)

Publication Number Publication Date
DE60329371D1 true DE60329371D1 (de) 2009-11-05

Family

ID=27753386

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60329371T Expired - Lifetime DE60329371D1 (de) 2002-02-27 2003-02-21 Selbstausrichtende strukturausbildung unter verwendung zweier wellenlängen

Country Status (9)

Country Link
US (1) US6764808B2 (https=)
EP (1) EP1478978B1 (https=)
JP (1) JP2005519456A (https=)
KR (1) KR20040094706A (https=)
CN (1) CN1299166C (https=)
AU (1) AU2003211152A1 (https=)
DE (1) DE60329371D1 (https=)
TW (1) TWI278013B (https=)
WO (1) WO2003073165A2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10138105A1 (de) * 2001-08-03 2003-02-27 Infineon Technologies Ag Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks
US7501230B2 (en) * 2002-11-04 2009-03-10 Meagley Robert P Photoactive adhesion promoter
DE10309266B3 (de) * 2003-03-04 2005-01-13 Infineon Technologies Ag Verfahren zum Bilden einer Öffnung einer Licht absorbierenden Schicht auf einer Maske
DE10310781A1 (de) * 2003-03-12 2004-09-30 Infineon Technologies Ag Verfahren zum Betreiben eines Mikroprozessors und eine Mikroprozessoranordnung
US7265366B2 (en) * 2004-03-31 2007-09-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006085741A1 (en) * 2005-02-09 2006-08-17 Stichting Dutch Polymer Institute Process for preparing a polymeric relief structure
US7816072B2 (en) * 2005-05-02 2010-10-19 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US20070166649A1 (en) * 2006-01-18 2007-07-19 Cheng-Hung Yu Method of forming a micro device
CN100465666C (zh) * 2006-01-24 2009-03-04 联华电子股份有限公司 微元件制作方法
JP2007287928A (ja) * 2006-04-17 2007-11-01 Nec Electronics Corp 半導体集積回路およびその製造方法ならびにマスク
JP4660826B2 (ja) * 2006-08-18 2011-03-30 山栄化学株式会社 レジストパターンの形成方法
US7863150B2 (en) * 2006-09-11 2011-01-04 International Business Machines Corporation Method to generate airgaps with a template first scheme and a self aligned blockout mask
KR101023077B1 (ko) * 2008-10-27 2011-03-24 주식회사 동부하이텍 마스크 패턴 형성 방법
US9977339B2 (en) 2014-01-27 2018-05-22 Tokyo Electron Limited System and method for shifting critical dimensions of patterned films
US9645495B2 (en) 2014-08-13 2017-05-09 Tokyo Electron Limited Critical dimension control in photo-sensitized chemically-amplified resist
US11294273B2 (en) * 2019-10-25 2022-04-05 Innolux Corporation Mask substrate and method for forming mask substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0098922A3 (en) 1982-07-13 1986-02-12 International Business Machines Corporation Process for selectively generating positive and negative resist patterns from a single exposure pattern
US4810601A (en) * 1984-12-07 1989-03-07 International Business Machines Corporation Top imaged resists
NL8500455A (nl) 1985-02-18 1986-09-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij een fotolakmasker wordt gevormd met behulp van een twee-laags-laksysteem.
US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
JPH02269353A (ja) 1988-10-28 1990-11-02 Hewlett Packard Co <Hp> フォトリソグラフィーによる半導体の製造方法
JP3192879B2 (ja) * 1994-07-28 2001-07-30 トヨタ自動車株式会社 セラミックス製バタフライ弁およびその製造方法
JPH09319097A (ja) * 1996-01-16 1997-12-12 Sumitomo Chem Co Ltd レジストパターンの形成方法
JP3373147B2 (ja) * 1998-02-23 2003-02-04 シャープ株式会社 フォトレジスト膜及びそのパターン形成方法
FR2812450B1 (fr) 2000-07-26 2003-01-10 France Telecom Resine, bi-couche de resine pour photolithographie dans l'extreme ultraviolet (euv) et procede de photolithogravure en extreme ultraviolet (euv)
WO2003095026A1 (en) 2002-05-13 2003-11-20 Pflueger D Russell Spinal disc therapy system

Also Published As

Publication number Publication date
EP1478978B1 (en) 2009-09-23
JP2005519456A (ja) 2005-06-30
CN1620634A (zh) 2005-05-25
TW200303573A (en) 2003-09-01
AU2003211152A1 (en) 2003-09-09
KR20040094706A (ko) 2004-11-10
CN1299166C (zh) 2007-02-07
TWI278013B (en) 2007-04-01
WO2003073165A2 (en) 2003-09-04
US6764808B2 (en) 2004-07-20
US20030162135A1 (en) 2003-08-28
EP1478978A2 (en) 2004-11-24
WO2003073165A3 (en) 2003-10-16

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