KR20040062084A - 실리콘 결정화방법 - Google Patents
실리콘 결정화방법 Download PDFInfo
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- KR20040062084A KR20040062084A KR1020020088403A KR20020088403A KR20040062084A KR 20040062084 A KR20040062084 A KR 20040062084A KR 1020020088403 A KR1020020088403 A KR 1020020088403A KR 20020088403 A KR20020088403 A KR 20020088403A KR 20040062084 A KR20040062084 A KR 20040062084A
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- 238000000034 method Methods 0.000 title claims abstract description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229920005591 polysilicon Polymers 0.000 claims abstract description 23
- 230000001678 irradiating effect Effects 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 64
- 230000008018 melting Effects 0.000 claims description 19
- 238000002844 melting Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 13
- 238000006356 dehydrogenation reaction Methods 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 230000004927 fusion Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 72
- 238000002425 crystallisation Methods 0.000 description 24
- 230000008025 crystallization Effects 0.000 description 19
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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Abstract
Description
Claims (9)
- 기판 상에 비정질 실리콘을 증착하여 비정질 선행막을 형성하는 단계와;상기 비정질 선행막의 상부에 고융점 금속을 증착하여, 금속층을 형성하는 단계와;상기 금속층 중 임의의 영역에 대응하는 금속층을 제거하여, 하부의 비정질 선행막을 노출하는 단계와;상기 패턴된 금속층이 형성된 기판의 이격된 상부에 투과부와 차단부로 구성된 마스크를 위치시키는 단계와;상기 마스크이 상부로 레이저 빔을 조사하여, 비정질 선행막을 폴리실리콘으로 결정화하는 단계를 포함하는 폴리실리콘 형성방법.
- 제 1 항에 있어서,상기 금속층과 그 하부의 비정질 시리콘이 제거되는 영역은 스위칭 소자 또는 구동 회로가 구성되는 영역인 폴리실리콘 형성방법.
- 제 1 항에 있어서,상기 비정질 선행막을 결정화 하는 단계는,상기 마스크의 상부로 1 차 레이저 빔을 조사하여, 상기 박막트랜지스터 영역의 투과부에 대응하는 부분의 비정질 실리콘층을 완전 용융한 후 결정화하여 측면 성장한 제 1 결정영역과 제 2 결정영역으로 구성된 결정영역을 형성하는 단계와;상기 부분적으로 결정화된 비정질 실리콘층의 상부에서 상기 마스크를 이동하는 단계와상기 마스크의 상부로 2 차 레이저 빔을 조사하여, 상기 투과영역에 대응하는 부분의 비정질 실리콘층과 일부 결정화된 영역을 용융하고 결정화하는 단계를 포함하는 폴리실리콘 형성방법.
- 제 1 항에 있어서,상기 금속층과 그 하부에 대응하는 비정질 선행막을 제거하여, 상기 임의의 영역에 대응하는 폴리 실리콘층을 남기는 단계를 더욱 포함하는 폴리실리콘 형성방법.제 1 항에 있어서,상기 비정질 실리콘층을 형성한 후 탈수소화 공정을 진행하는 단계를 더욱 포함하는 폴리실리콘 형성방법.
- 제 1 항에 있어서,상기 고융점 금속은 몰리브덴(Mo)인 폴리실리콘 형성방법.
- 기판 상에 비정질 실리콘을 증착하여 비정질 선행막을 형성하는 단계와;상기 비정질 선행막의 상부에 고융점 금속을 증착하여, 금속층을 형성하는 단계와;상기 기판 상부의 임의의 영역에 대응하는 금속층을 제거하여, 하부의 비정질 선행막을 노출하는 단계와;상기 패턴된 금속층이 형성된 기판의 이격된 상부에 투과부와 차단부로 구성된 마스크를 위치시키는 단계와;상기 마스크의 상부로 레이저 빔을 조사하여, 상기 노출된 비정질 선행막을 폴리실리콘으로 결정화하는 단계와;상기 패턴된 금속층과 그 하부의 실리콘 선행막을 패턴하여, 상기 스위칭 영역에 대응한 폴리실리콘층만 남기는 단계와;상기 폴리실리콘층을 패턴하여, 소정 형상의 액티브층을 형성하는 단계와;상기 액티브층이 형성된 기판의 전면에 제 1 절연막을 형성하는 단계와;상기 제 2 절연막 상부의 액티브층 상부에 게이트 전극을 형성하는 단계와;상기 게이트 전극이 위치하지 않은 액티브층의 양측에 불순물 이온을 도핑하여 오믹 영역을 형성하는 단계와;상기 게이트 전극이 형성된 기판의 전면에 제 2 절연막을 형성한 후, 상기 오믹 영역을 각각 노출하는 단계와;상기 노출된 오믹 영역과 접촉하고 서로 이격된 소스 전극과 드레인 전극을형성하는 단계를 포함하는 다결정 실리콘 박막트랜지스터 제조방법.
- 제 7 항에 있어서,상기 비정질 선행막을 결정화 하는 단계는,상기 마스크의 상부로 1 차 레이저 빔을 조사하여, 상기 박막트랜지스터 영역의 투과부에 대응하는 부분의 비정질 실리콘층을 완전 용융한 후 결정화하여 측면 성장한 제 1 결정영역과 제 2 결정영역으로 구성된 결정영역을 형성하는 단계와;상기 부분적으로 결정화된 비정질 실리콘층의 상부에서 상기 마스크를 이동하는 단계와상기 마스크의 상부로 2 차 레이저 빔을 조사하여, 상기 투과영역에 대응하는 부분의 비정질 실리콘층과 일부 결정화된 영역을 용융하고 결정화하는 단계를 포함하는 다결정 박막트랜지스터 형성방법.
- 제 7 항에 있어서,상기 비정질 실리콘층을 형성한 후 탈수소화 공정을 진행하는 단계를 더욱 포함하는 다결정 박막트랜지스터 제조방법.
- 제 7 항에 있어서,상기 고융점 금속은 몰리브덴(Mo)인 다결정 박막트랜지스터 제조방법.
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US10/746,019 US6949422B2 (en) | 2002-12-31 | 2003-12-23 | Method of crystalizing amorphous silicon for use in thin film transistor |
JP2003434244A JP4140772B2 (ja) | 2002-12-31 | 2003-12-26 | シリコンの結晶化方法 |
CNB2003101238536A CN1310284C (zh) | 2002-12-31 | 2003-12-31 | 薄膜晶体管用非晶硅的结晶方法 |
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TWI279052B (en) * | 2001-08-31 | 2007-04-11 | Semiconductor Energy Lab | Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device |
US7387922B2 (en) * | 2003-01-21 | 2008-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system |
KR100753568B1 (ko) * | 2003-06-30 | 2007-08-30 | 엘지.필립스 엘시디 주식회사 | 비정질 반도체층의 결정화방법 및 이를 이용한 액정표시소자의 제조방법 |
KR101316633B1 (ko) * | 2004-07-28 | 2013-10-15 | 삼성디스플레이 주식회사 | 다결정 규소용 마스크 및 이의 제조방법과, 이를 이용한박막트랜지스터의 제조방법 |
TWI390734B (zh) * | 2005-04-06 | 2013-03-21 | Samsung Display Co Ltd | 製造多晶矽薄膜之方法及製造具有多晶矽薄膜之薄膜電晶體之方法 |
US8441018B2 (en) | 2007-08-16 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Direct bandgap substrates and methods of making and using |
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WO2009068756A1 (fr) * | 2007-11-28 | 2009-06-04 | Commissariat A L'energie Atomique | Procede de cristallisation |
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JP5564879B2 (ja) * | 2009-10-01 | 2014-08-06 | 三菱電機株式会社 | 非晶質半導体膜の結晶化方法、並びに薄膜トランジスタ、半導体装置、表示装置、及びその製造方法 |
EP2364809A1 (en) * | 2010-02-26 | 2011-09-14 | Excico France | Method and apparatus for irradiating a semiconductor material surface by laser energy |
CN103325688A (zh) * | 2013-06-17 | 2013-09-25 | 深圳市华星光电技术有限公司 | 薄膜晶体管的沟道形成方法及补偿电路 |
CN103311129A (zh) * | 2013-06-17 | 2013-09-18 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其沟道形成方法 |
CN103730336B (zh) * | 2013-12-30 | 2016-07-06 | 深圳市华星光电技术有限公司 | 定义多晶硅生长方向的方法 |
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CN102097368A (zh) * | 2010-11-08 | 2011-06-15 | 昆山工研院新型平板显示技术中心有限公司 | 一种低温多晶硅薄膜晶体管阵列基板的制造方法 |
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US6949422B2 (en) | 2005-09-27 |
JP4140772B2 (ja) | 2008-08-27 |
JP2004214677A (ja) | 2004-07-29 |
CN1514470A (zh) | 2004-07-21 |
US20040137671A1 (en) | 2004-07-15 |
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