KR20040045015A - 고 내부 투과도 및 저 복굴절을 갖는 용융 실리카 - Google Patents
고 내부 투과도 및 저 복굴절을 갖는 용융 실리카 Download PDFInfo
- Publication number
- KR20040045015A KR20040045015A KR10-2004-7004561A KR20047004561A KR20040045015A KR 20040045015 A KR20040045015 A KR 20040045015A KR 20047004561 A KR20047004561 A KR 20047004561A KR 20040045015 A KR20040045015 A KR 20040045015A
- Authority
- KR
- South Korea
- Prior art keywords
- fused silica
- less
- birefringence
- axis
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 239000005350 fused silica glass Substances 0.000 title claims abstract description 78
- 230000005540 biological transmission Effects 0.000 title description 10
- 238000002834 transmittance Methods 0.000 claims abstract description 21
- 230000008859 change Effects 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 238000000206 photolithography Methods 0.000 claims description 6
- 230000008832 photodamage Effects 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 27
- 230000003287 optical effect Effects 0.000 description 24
- 230000008569 process Effects 0.000 description 19
- 230000035699 permeability Effects 0.000 description 15
- 238000005259 measurement Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000007062 hydrolysis Effects 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- 239000011819 refractory material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000004071 soot Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- -1 polymethylsiloxanes Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012527 feed solution Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000011049 pearl Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/21—Doped silica-based glasses containing non-metals other than boron or halide containing molecular hydrogen
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/20—Doped silica-based glasses containing non-metals other than boron or halide
- C03C2201/23—Doped silica-based glasses containing non-metals other than boron or halide containing hydroxyl groups
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Glass Compositions (AREA)
- Glass Melting And Manufacturing (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32595001P | 2001-09-27 | 2001-09-27 | |
| US60/325,950 | 2001-09-27 | ||
| PCT/US2002/029116 WO2003027035A1 (en) | 2001-09-27 | 2002-09-13 | Fused silica having high internal transmission and low birefringence |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040045015A true KR20040045015A (ko) | 2004-05-31 |
Family
ID=23270140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7004561A Ceased KR20040045015A (ko) | 2001-09-27 | 2002-09-13 | 고 내부 투과도 및 저 복굴절을 갖는 용융 실리카 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20030064877A1 (enExample) |
| EP (1) | EP1441994A4 (enExample) |
| JP (1) | JP2005504699A (enExample) |
| KR (1) | KR20040045015A (enExample) |
| CN (1) | CN1558875A (enExample) |
| WO (1) | WO2003027035A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006251781A (ja) * | 2005-02-09 | 2006-09-21 | Asahi Glass Co Ltd | マスクブランクス |
| DE602006017660D1 (de) * | 2005-02-09 | 2010-12-02 | Asahi Glass Co Ltd | Maskenrohlinge |
| US20070049482A1 (en) * | 2005-08-11 | 2007-03-01 | Shin-Etsu Chemical Co., Ltd. | Synthetic quartz glass substrate for excimer lasers and making method |
| JP2008070730A (ja) * | 2006-09-15 | 2008-03-27 | Sony Corp | マスクブランクス選定方法、複屈折性指標の算出方法、リソグラフィ方法、マスクブランクス選定装置、複屈折性指標算出装置およびそのプログラム |
| JP2007261942A (ja) * | 2007-05-23 | 2007-10-11 | Shinetsu Quartz Prod Co Ltd | 光学用合成石英ガラス |
| WO2015029141A1 (ja) * | 2013-08-27 | 2015-03-05 | 三菱電機株式会社 | レーザ発振器 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0546196B1 (en) * | 1991-06-29 | 1997-05-02 | Shin-Etsu Quartz Products Co., Ltd. | Synthetic quartz glass optical member for excimer laser and production thereof |
| US6087283A (en) * | 1995-01-06 | 2000-07-11 | Nikon Corporation | Silica glass for photolithography |
| US5616159A (en) * | 1995-04-14 | 1997-04-01 | Corning Incorporated | Method of forming high purity fused silica having high resistance to optical damage |
| EP0780345A1 (en) * | 1995-12-22 | 1997-06-25 | Corning Incorporated | Optical element for UV transmission |
| US5958809A (en) * | 1996-08-21 | 1999-09-28 | Nikon Corporation | Fluorine-containing silica glass |
| US6291377B1 (en) * | 1997-08-21 | 2001-09-18 | Nikon Corporation | Silica glass and its manufacturing method |
| US6333283B1 (en) * | 1997-05-16 | 2001-12-25 | Sumitomo Electric Industries, Ltd. | Silica glass article and manufacturing process therefor |
| DE69816758T2 (de) * | 1997-05-20 | 2004-06-03 | Heraeus Quarzglas Gmbh & Co. Kg | Synthetisches quarzglas zur verwendung in uv-strahlung und verfahren zu seiner herstellung |
| JP2001019465A (ja) * | 1999-07-07 | 2001-01-23 | Shin Etsu Chem Co Ltd | エキシマレーザ用合成石英ガラス部材及びその製造方法 |
| JP3228732B2 (ja) * | 1999-11-24 | 2001-11-12 | 信越石英株式会社 | 真空紫外線リソグラフィーに用いられる投影レンズ用シリカガラス光学材料の製造方法 |
| JP2001270731A (ja) * | 2000-03-28 | 2001-10-02 | Nikon Corp | 合成石英ガラス部材及びこれを用いた光リソグラフィー装置 |
-
2002
- 2002-09-13 JP JP2003530628A patent/JP2005504699A/ja active Pending
- 2002-09-13 CN CNA028189469A patent/CN1558875A/zh active Pending
- 2002-09-13 WO PCT/US2002/029116 patent/WO2003027035A1/en not_active Ceased
- 2002-09-13 EP EP02761645A patent/EP1441994A4/en not_active Withdrawn
- 2002-09-13 KR KR10-2004-7004561A patent/KR20040045015A/ko not_active Ceased
- 2002-09-25 US US10/255,731 patent/US20030064877A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1441994A4 (en) | 2008-09-03 |
| CN1558875A (zh) | 2004-12-29 |
| EP1441994A1 (en) | 2004-08-04 |
| JP2005504699A (ja) | 2005-02-17 |
| US20030064877A1 (en) | 2003-04-03 |
| WO2003027035A1 (en) | 2003-04-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20040326 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20070504 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20080226 Patent event code: PE09021S01D |
|
| E90F | Notification of reason for final refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Final Notice of Reason for Refusal Patent event date: 20080822 Patent event code: PE09021S02D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20090203 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20080822 Comment text: Final Notice of Reason for Refusal Patent event code: PE06011S02I Patent event date: 20080226 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |