KR20040030511A - 신규 코폴리머 및 포토레지스트 조성물 - Google Patents

신규 코폴리머 및 포토레지스트 조성물 Download PDF

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Publication number
KR20040030511A
KR20040030511A KR10-2003-7011140A KR20037011140A KR20040030511A KR 20040030511 A KR20040030511 A KR 20040030511A KR 20037011140 A KR20037011140 A KR 20037011140A KR 20040030511 A KR20040030511 A KR 20040030511A
Authority
KR
South Korea
Prior art keywords
photoresist
resin
group
photoacid
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7011140A
Other languages
English (en)
Korean (ko)
Inventor
바클레이조지지.
카바나로버트제이.
Original Assignee
쉬플리 캄파니, 엘.엘.씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쉬플리 캄파니, 엘.엘.씨. filed Critical 쉬플리 캄파니, 엘.엘.씨.
Publication of KR20040030511A publication Critical patent/KR20040030511A/ko
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR10-2003-7011140A 2001-02-25 2002-02-25 신규 코폴리머 및 포토레지스트 조성물 Ceased KR20040030511A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US27140401P 2001-02-25 2001-02-25
US60/271,404 2001-02-25
PCT/US2002/005627 WO2002069044A2 (en) 2001-02-25 2002-02-25 Polymers and photoresist compositions

Publications (1)

Publication Number Publication Date
KR20040030511A true KR20040030511A (ko) 2004-04-09

Family

ID=23035399

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7011140A Ceased KR20040030511A (ko) 2001-02-25 2002-02-25 신규 코폴리머 및 포토레지스트 조성물

Country Status (7)

Country Link
US (1) US20020187420A1 (enExample)
JP (1) JP2004524565A (enExample)
KR (1) KR20040030511A (enExample)
CN (1) CN1310090C (enExample)
AU (1) AU2002255598A1 (enExample)
TW (1) TWI293402B (enExample)
WO (1) WO2002069044A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3890989B2 (ja) * 2002-01-25 2007-03-07 住友化学株式会社 レジスト組成物
US7488565B2 (en) 2003-10-01 2009-02-10 Chevron U.S.A. Inc. Photoresist compositions comprising diamondoid derivatives
US7208334B2 (en) * 2004-03-31 2007-04-24 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device, acid etching resistance material and copolymer
JP4279237B2 (ja) * 2004-05-28 2009-06-17 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
US20060172223A1 (en) * 2004-11-24 2006-08-03 Rohm And Haas Electronic Materials Llc Photoresist compositions
JP5031310B2 (ja) * 2006-01-13 2012-09-19 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP5782283B2 (ja) * 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 新規のポリマーおよびフォトレジスト組成物

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100245410B1 (ko) * 1997-12-02 2000-03-02 윤종용 감광성 폴리머 및 그것을 이용한 화학증폭형 레지스트 조성물
US6103445A (en) * 1997-03-07 2000-08-15 Board Of Regents, The University Of Texas System Photoresist compositions comprising norbornene derivative polymers with acid labile groups
CN1190706C (zh) * 1998-08-26 2005-02-23 住友化学工业株式会社 一种化学增强型正光刻胶组合物
TWI263866B (en) * 1999-01-18 2006-10-11 Sumitomo Chemical Co Chemical amplification type positive resist composition
JP3353292B2 (ja) * 1999-03-29 2002-12-03 日本電気株式会社 化学増幅系レジスト
JP4061801B2 (ja) * 2000-01-24 2008-03-19 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6610465B2 (en) * 2001-04-11 2003-08-26 Clariant Finance (Bvi) Limited Process for producing film forming resins for photoresist compositions

Also Published As

Publication number Publication date
US20020187420A1 (en) 2002-12-12
CN1310090C (zh) 2007-04-11
AU2002255598A1 (en) 2002-09-12
TWI293402B (en) 2008-02-11
WO2002069044A3 (en) 2003-02-27
CN1498361A (zh) 2004-05-19
JP2004524565A (ja) 2004-08-12
WO2002069044A2 (en) 2002-09-06

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Patent event date: 20030825

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