KR20040026003A - 액정표시소자 및 그 제조방법 - Google Patents
액정표시소자 및 그 제조방법 Download PDFInfo
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- KR20040026003A KR20040026003A KR1020020056502A KR20020056502A KR20040026003A KR 20040026003 A KR20040026003 A KR 20040026003A KR 1020020056502 A KR1020020056502 A KR 1020020056502A KR 20020056502 A KR20020056502 A KR 20020056502A KR 20040026003 A KR20040026003 A KR 20040026003A
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- Prior art keywords
- drain electrode
- gate
- data line
- liquid crystal
- layer
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 210000002858 crystal cell Anatomy 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000010408 film Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000005284 excitation Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 113
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 238000002161 passivation Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000001443 photoexcitation Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 4
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- -1 acryl Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (8)
- 액정셀을 구동하기 위한 화소전극과,상기 화소전극에 접속되는 박막트랜지스터의 드레인전극과,상기 드레인전극에 상기 액정셀을 구동하기 위한 데이터신호를 공급하는 데이터라인과,상기 수직방향으로 마주보는 데이터라인과 드레인전극 사이의 채널영역 주변부에 형성되는 반도체층의 폭보다 넓은 폭으로 형성되며, 상기 비수직방향으로 마주보는 데이터라인과 드레인전극 사이와 대응되는 일측단을 요철형태로 형성하는 게이트라인을 구비하는 것을 특징으로 하는 액정표시소자.
- 제 1 항에 있어서,상기 박막트랜지스터는,상기 게이트라인에 포함되는 게이트전극과,상기 게이트절연막 상에 형성되는 활성층과,상기 활성층 상에 형성되는 오믹접촉층과,상기 드레인전극과 상기 채널을 사이에 두고 마주보도록 형성되며 상기 데이터라인에 포함되는 소스전극을 구비하는 것을 특징으로 하는 액정표시소자.
- 제 2 항에 있어서,상기 소스 및 드레인전극은 상기 오믹접촉층과 동일패턴으로 형성되는 것을 특징으로 하는 액정표시소자.
- 제 2 항에 있어서,상기 오믹접촉층은상기 활성층 상에 직선형태의 채널과 대응되게 홀이 형성되는 것을 특징으로 하는 액정표시소자.
- 제 2 항에 있어서,상기 오믹접촉층은상기 활성층 상에 "U"자 형태 또는 "L"자 형태의 채널과 대응되게 홀이 형성되는 것을 특징으로 하는 액정표시소자.
- 기판 상에 게이트금속층을 증착한 후, 상기 게이트금속층을 제1 마스크로 패터닝하여 소정영역에 요철부를 갖는 게이트라인을 형성하는 단계와,상기 기판 상에 상기 게이트라인을 덮도록 절연물질, 반도체물질 및 데이터금속층을 증착한 후, 상기 반도체물질과 데이터금속층을 제2 마스크로 동시에 패터닝하여 활성층, 오믹접촉층, 데이터라인 및 드레인전극을 형성하는 단계와,상기 활성층, 오믹접촉층, 데이터라인 및 드레인전극이 형성된 기판 상에 절연물질을 증착한 후, 상기 절연물질을 제3 마스크로 패터닝하여 보호막을 형성하는단계와,상기 보호막이 형성된 기판 상에 투명전도성물질을 증착한 후, 상기 투명전도성물질을 제4 마스크로 패터닝하여 화소전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 6 항에 있어서,상기 소정영역은 비수직방향으로 마주보는 데이터라인과 드레인전극 사이와 대응되는 영역인 것을 특징으로 하는 액정표시소자의 제조방법.
- 제 6 항에 있어서,상기 데이터라인과 상기 드레인전극 사이에 형성되는 채널영역의 주변부의 활성층의 폭은 상기 게이트라인의 폭보다 좁게 형성되는 것을 특징으로 하는 액정표시소자의 제조방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020056502A KR100870522B1 (ko) | 2002-09-17 | 2002-09-17 | 액정표시소자 및 그 제조방법 |
US10/638,497 US6940567B2 (en) | 2002-09-17 | 2003-08-12 | Liquid crystal display device having reduced optical pumping current and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020056502A KR100870522B1 (ko) | 2002-09-17 | 2002-09-17 | 액정표시소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040026003A true KR20040026003A (ko) | 2004-03-27 |
KR100870522B1 KR100870522B1 (ko) | 2008-11-26 |
Family
ID=31987464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020020056502A KR100870522B1 (ko) | 2002-09-17 | 2002-09-17 | 액정표시소자 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US6940567B2 (ko) |
KR (1) | KR100870522B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8759833B2 (en) | 2005-06-09 | 2014-06-24 | Samsung Display Co., Ltd. | Thin film transistor array panel and method of manufacturing the same |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101139522B1 (ko) * | 2004-12-04 | 2012-05-07 | 엘지디스플레이 주식회사 | 반투과형 박막 트랜지스터 기판 및 그 제조 방법 |
KR101228475B1 (ko) * | 2006-06-05 | 2013-01-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
EP2172977A1 (en) | 2008-10-03 | 2010-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR102133478B1 (ko) | 2008-10-03 | 2020-07-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
CN103928476A (zh) | 2008-10-03 | 2014-07-16 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
CN102509736B (zh) | 2008-10-24 | 2015-08-19 | 株式会社半导体能源研究所 | 半导体器件和用于制造该半导体器件的方法 |
US8106400B2 (en) | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101432764B1 (ko) | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
KR102163686B1 (ko) | 2008-11-21 | 2020-10-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR20230066115A (ko) | 2009-09-04 | 2023-05-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
WO2011034012A1 (en) * | 2009-09-16 | 2011-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, light emitting device, semiconductor device, and electronic device |
JP2013084333A (ja) | 2011-09-28 | 2013-05-09 | Semiconductor Energy Lab Co Ltd | シフトレジスタ回路 |
CN103926767B (zh) * | 2013-10-17 | 2017-01-25 | 成都天马微电子有限公司 | 液晶显示器及其检测方法 |
CN103928406B (zh) * | 2014-04-01 | 2016-08-17 | 京东方科技集团股份有限公司 | 阵列基板的制备方法、阵列基板、显示装置 |
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JP2004013003A (ja) * | 2002-06-10 | 2004-01-15 | Advanced Display Inc | 液晶表示装置 |
KR100862240B1 (ko) * | 2002-07-31 | 2008-10-09 | 엘지디스플레이 주식회사 | 반사형 액정표시장치와 그 제조방법 |
-
2002
- 2002-09-17 KR KR1020020056502A patent/KR100870522B1/ko active IP Right Grant
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2003
- 2003-08-12 US US10/638,497 patent/US6940567B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8759833B2 (en) | 2005-06-09 | 2014-06-24 | Samsung Display Co., Ltd. | Thin film transistor array panel and method of manufacturing the same |
Also Published As
Publication number | Publication date |
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US6940567B2 (en) | 2005-09-06 |
KR100870522B1 (ko) | 2008-11-26 |
US20040051823A1 (en) | 2004-03-18 |
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