KR20040012912A - 증착 공정에 의해 배선 영역들을 선택적으로 합급하는 방법 - Google Patents

증착 공정에 의해 배선 영역들을 선택적으로 합급하는 방법 Download PDF

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Publication number
KR20040012912A
KR20040012912A KR10-2003-7016123A KR20037016123A KR20040012912A KR 20040012912 A KR20040012912 A KR 20040012912A KR 20037016123 A KR20037016123 A KR 20037016123A KR 20040012912 A KR20040012912 A KR 20040012912A
Authority
KR
South Korea
Prior art keywords
copper
layer
alloy element
alloying
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7016123A
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English (en)
Korean (ko)
Inventor
베세르폴알.
자오래리
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 마이크로 디바이시즈, 인코포레이티드 filed Critical 어드밴스드 마이크로 디바이시즈, 인코포레이티드
Publication of KR20040012912A publication Critical patent/KR20040012912A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2003-7016123A 2001-06-20 2002-04-02 증착 공정에 의해 배선 영역들을 선택적으로 합급하는 방법 Ceased KR20040012912A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/884,027 2001-06-20
US09/884,027 US6656834B1 (en) 2001-06-20 2001-06-20 Method of selectively alloying interconnect regions by deposition process
PCT/US2002/012773 WO2003001589A2 (en) 2001-06-20 2002-04-02 A method of selectively alloying interconnect regions by depostion process

Publications (1)

Publication Number Publication Date
KR20040012912A true KR20040012912A (ko) 2004-02-11

Family

ID=25383816

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7016123A Ceased KR20040012912A (ko) 2001-06-20 2002-04-02 증착 공정에 의해 배선 영역들을 선택적으로 합급하는 방법

Country Status (7)

Country Link
US (1) US6656834B1 (enExample)
EP (1) EP1407488A2 (enExample)
JP (1) JP4886165B2 (enExample)
KR (1) KR20040012912A (enExample)
CN (1) CN100490113C (enExample)
TW (1) TW575909B (enExample)
WO (1) WO2003001589A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4647184B2 (ja) * 2002-12-27 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR100573897B1 (ko) * 2003-12-30 2006-04-26 동부일렉트로닉스 주식회사 반도체 제조 방법
JP4764606B2 (ja) * 2004-03-04 2011-09-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US7327033B2 (en) * 2004-08-05 2008-02-05 International Business Machines Corporation Copper alloy via bottom liner
US8164190B2 (en) * 2009-06-25 2012-04-24 International Business Machines Corporation Structure of power grid for semiconductor devices and method of making the same
KR101131352B1 (ko) 2009-08-31 2012-04-04 삼성전기주식회사 인쇄회로기판의 제조방법
CN102005384B (zh) * 2010-09-16 2012-02-01 哈尔滨工程大学 铜金属化自形成阻挡层低温退火方法
US10461026B2 (en) 2016-06-30 2019-10-29 International Business Machines Corporation Techniques to improve reliability in Cu interconnects using Cu intermetallics

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2850380B2 (ja) * 1989-07-11 1999-01-27 セイコーエプソン株式会社 半導体装置の製造方法
KR0165813B1 (ko) * 1995-04-12 1999-02-01 문정환 접속홀의 플러그 형성 방법
KR19980032463A (ko) * 1996-10-03 1998-07-25 윌리엄비.켐플러 개선된 전자이주 능력을 위한 비아(ｖｉａ) 패드와 캡
US5913147A (en) * 1997-01-21 1999-06-15 Advanced Micro Devices, Inc. Method for fabricating copper-aluminum metallization
JP3479199B2 (ja) * 1997-03-19 2003-12-15 沖電気工業株式会社 半導体素子の多層配線の製造方法
US5930669A (en) * 1997-04-03 1999-07-27 International Business Machines Corporation Continuous highly conductive metal wiring structures and method for fabricating the same
JPH10294317A (ja) 1997-04-18 1998-11-04 Matsushita Electric Ind Co Ltd 積層配線構造体およびその製造方法
US6037257A (en) 1997-05-08 2000-03-14 Applied Materials, Inc. Sputter deposition and annealing of copper alloy metallization
US6387805B2 (en) * 1997-05-08 2002-05-14 Applied Materials, Inc. Copper alloy seed layer for copper metallization
US6130161A (en) 1997-05-30 2000-10-10 International Business Machines Corporation Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
US6069068A (en) * 1997-05-30 2000-05-30 International Business Machines Corporation Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity
US6249055B1 (en) 1998-02-03 2001-06-19 Advanced Micro Devices, Inc. Self-encapsulated copper metallization
US5981382A (en) * 1998-03-13 1999-11-09 Texas Instruments Incorporated PVD deposition process for CVD aluminum liner processing
US6268289B1 (en) * 1998-05-18 2001-07-31 Motorola Inc. Method for protecting the edge exclusion of a semiconductor wafer from copper plating through use of an edge exclusion masking layer
US6144096A (en) 1998-10-05 2000-11-07 Advanced Micro Devices, Inc. Low resistivity semiconductor barrier layers and manufacturing method therefor
US6242349B1 (en) 1998-12-09 2001-06-05 Advanced Micro Devices, Inc. Method of forming copper/copper alloy interconnection with reduced electromigration

Also Published As

Publication number Publication date
US6656834B1 (en) 2003-12-02
JP2004531900A (ja) 2004-10-14
TW575909B (en) 2004-02-11
JP4886165B2 (ja) 2012-02-29
CN100490113C (zh) 2009-05-20
WO2003001589A3 (en) 2003-03-20
EP1407488A2 (en) 2004-04-14
CN1516896A (zh) 2004-07-28
US20030216029A1 (en) 2003-11-20
WO2003001589A2 (en) 2003-01-03

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