KR20040005571A - 플렉서블 하이브리드 메모리 소자를 포함하는 메모리 장치 - Google Patents

플렉서블 하이브리드 메모리 소자를 포함하는 메모리 장치 Download PDF

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Publication number
KR20040005571A
KR20040005571A KR1020030012736A KR20030012736A KR20040005571A KR 20040005571 A KR20040005571 A KR 20040005571A KR 1020030012736 A KR1020030012736 A KR 1020030012736A KR 20030012736 A KR20030012736 A KR 20030012736A KR 20040005571 A KR20040005571 A KR 20040005571A
Authority
KR
South Korea
Prior art keywords
flexible
layer
switch
memory device
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020030012736A
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English (en)
Korean (ko)
Inventor
잭슨와렌비
타우시그칼필립
페를로브크레이그
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 컴퍼니(델라웨어주법인) filed Critical 휴렛-팩커드 컴퍼니(델라웨어주법인)
Publication of KR20040005571A publication Critical patent/KR20040005571A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/80—Arrangements for protection of devices protecting against overcurrent or overload, e.g. fuses or shunts

Landscapes

  • Semiconductor Memories (AREA)
KR1020030012736A 2002-03-01 2003-02-28 플렉서블 하이브리드 메모리 소자를 포함하는 메모리 장치 Withdrawn KR20040005571A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/086,606 US6683322B2 (en) 2002-03-01 2002-03-01 Flexible hybrid memory element
US10/086,606 2002-03-01

Publications (1)

Publication Number Publication Date
KR20040005571A true KR20040005571A (ko) 2004-01-16

Family

ID=27733416

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030012736A Withdrawn KR20040005571A (ko) 2002-03-01 2003-02-28 플렉서블 하이브리드 메모리 소자를 포함하는 메모리 장치

Country Status (7)

Country Link
US (1) US6683322B2 (https=)
EP (1) EP1341186B1 (https=)
JP (1) JP2003273322A (https=)
KR (1) KR20040005571A (https=)
CN (1) CN1442906A (https=)
DE (1) DE60301508T2 (https=)
TW (1) TW200304218A (https=)

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Publication number Priority date Publication date Assignee Title
JP2004047791A (ja) * 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置
US20050195640A1 (en) * 2003-11-25 2005-09-08 Shawn Smith Two-component, rectifying-junction memory element
KR100688498B1 (ko) * 2004-07-01 2007-03-02 삼성전자주식회사 게이트 드라이버가 내장된 액정 패널 및 이의 구동 방법
US7220982B2 (en) * 2004-07-27 2007-05-22 Micron Technology, Inc. Amorphous carbon-based non-volatile memory
US7288784B2 (en) * 2004-08-19 2007-10-30 Micron Technology, Inc. Structure for amorphous carbon based non-volatile memory
EP2348460B1 (en) * 2004-10-18 2014-04-23 Semiconductor Energy Laboratory Co, Ltd. Organic anti fuse memory
CN101044624A (zh) * 2004-10-22 2007-09-26 株式会社半导体能源研究所 半导体器件
US7795617B2 (en) * 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
US7688624B2 (en) * 2004-11-26 2010-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8097400B2 (en) * 2005-02-22 2012-01-17 Hewlett-Packard Development Company, L.P. Method for forming an electronic device
US7926726B2 (en) 2005-03-28 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Survey method and survey system
US7358590B2 (en) 2005-03-31 2008-04-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP4712592B2 (ja) * 2005-03-31 2011-06-29 株式会社半導体エネルギー研究所 記憶素子、半導体装置およびその駆動方法
US7700984B2 (en) * 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US7868320B2 (en) 2005-05-31 2011-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7719872B2 (en) * 2005-12-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd. Write-once nonvolatile memory with redundancy capability
TWI281760B (en) * 2005-12-30 2007-05-21 Ind Tech Res Inst Organic tri-stable device and method for manufacturing and operating the same
EP1850378A3 (en) * 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and semicondutor device
US8030637B2 (en) * 2006-08-25 2011-10-04 Qimonda Ag Memory element using reversible switching between SP2 and SP3 hybridized carbon
US7915603B2 (en) * 2006-10-27 2011-03-29 Qimonda Ag Modifiable gate stack memory element
US20080102278A1 (en) * 2006-10-27 2008-05-01 Franz Kreupl Carbon filament memory and method for fabrication
US7933133B2 (en) * 2007-11-05 2011-04-26 Contour Semiconductor, Inc. Low cost, high-density rectifier matrix memory
US8535766B2 (en) 2008-10-22 2013-09-17 Applied Materials, Inc. Patterning of magnetic thin film using energized ions
US20090201722A1 (en) * 2008-02-12 2009-08-13 Kamesh Giridhar Method including magnetic domain patterning using plasma ion implantation for mram fabrication
KR20140069342A (ko) 2008-05-16 2014-06-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자 및 전자기기
US8895950B2 (en) * 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US20110156012A1 (en) * 2009-11-12 2011-06-30 Sony Corporation Double layer hardmask for organic devices
US8877531B2 (en) 2010-09-27 2014-11-04 Applied Materials, Inc. Electronic apparatus
JP5380481B2 (ja) * 2011-03-07 2014-01-08 株式会社東芝 記憶装置およびその製造方法
JP5722180B2 (ja) * 2011-09-26 2015-05-20 株式会社日立製作所 不揮発性記憶装置
KR20140071813A (ko) 2012-12-04 2014-06-12 삼성전자주식회사 파이버 상에 형성된 저항성 메모리 소자 및 그 제종 방법
US10355206B2 (en) 2017-02-06 2019-07-16 Nantero, Inc. Sealed resistive change elements

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4089734A (en) 1974-09-16 1978-05-16 Raytheon Company Integrated circuit fusing technique
US4677742A (en) 1983-01-18 1987-07-07 Energy Conversion Devices, Inc. Electronic matrix arrays and method for making the same
US5177330A (en) * 1988-09-19 1993-01-05 Futaba Denshi Kogyo K.K. Key board switch
GB9122362D0 (en) 1991-10-22 1991-12-04 British Telecomm Resistive memory element
AU2492299A (en) 1998-02-02 1999-08-16 Uniax Corporation X-y addressable electric microswitch arrays and sensor matrices employing them
US6552409B2 (en) 2001-06-05 2003-04-22 Hewlett-Packard Development Company, Lp Techniques for addressing cross-point diode memory arrays

Also Published As

Publication number Publication date
JP2003273322A (ja) 2003-09-26
EP1341186B1 (en) 2005-09-07
US20030176034A1 (en) 2003-09-18
DE60301508D1 (de) 2005-10-13
TW200304218A (en) 2003-09-16
EP1341186A1 (en) 2003-09-03
CN1442906A (zh) 2003-09-17
US6683322B2 (en) 2004-01-27
DE60301508T2 (de) 2006-06-29

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PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000