KR20040002122A - 바이폴라 트랜지스터의 제조방법 - Google Patents
바이폴라 트랜지스터의 제조방법 Download PDFInfo
- Publication number
- KR20040002122A KR20040002122A KR1020020037552A KR20020037552A KR20040002122A KR 20040002122 A KR20040002122 A KR 20040002122A KR 1020020037552 A KR1020020037552 A KR 1020020037552A KR 20020037552 A KR20020037552 A KR 20020037552A KR 20040002122 A KR20040002122 A KR 20040002122A
- Authority
- KR
- South Korea
- Prior art keywords
- base
- conductivity type
- bipolar transistor
- well
- conductive well
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 230000003321 amplification Effects 0.000 abstract description 5
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 5
- 238000002513 implantation Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6625—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (2)
- 제 1 도전형 웰이 형성된 반도체 기판에 베이스용 제 2 도전형 웰을 형성하는 단계;상기 제 2 도전형 웰상에 제 1 방향과 상기 제 1 방향을 절단하는 제 2 방향으로 상기 제 2 도전형 웰을 가로지르는 라인 패턴 구조의 폴리막을 형성하는 단계;상기 폴리막 및 그에 인접한 제 2 도전형 웰을 노출하는 마스크를 이용한 제 1 도전형 불순물 주입으로 상기 폴리막 양측의 제 2 도전형 웰에 이미터 및 콜렉터를 형성하여 상기 폴리막 하부의 제 2 도전형 웰에 베이스를 정의하는 단계를 포함하여 형성함을 특징으로 하는 바이폴라 트랜지스터의 제조방법.
- 제 1항에 있어서,상기 베이스 콘택 영역은 높은 이온 주입 에너지로 제 2 도전형 불순물 이온을 주입하여 형성함을 특징으로 하는 바이폴라 트랜지스터의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020037552A KR100897474B1 (ko) | 2002-06-29 | 2002-06-29 | 바이폴라 트랜지스터의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020020037552A KR100897474B1 (ko) | 2002-06-29 | 2002-06-29 | 바이폴라 트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040002122A true KR20040002122A (ko) | 2004-01-07 |
KR100897474B1 KR100897474B1 (ko) | 2009-05-14 |
Family
ID=37313841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020037552A KR100897474B1 (ko) | 2002-06-29 | 2002-06-29 | 바이폴라 트랜지스터의 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100897474B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101044387B1 (ko) * | 2004-07-22 | 2011-06-27 | 매그나칩 반도체 유한회사 | 바이폴라 접합 트랜지스터의 제조방법 |
KR101099563B1 (ko) * | 2004-07-21 | 2011-12-28 | 매그나칩 반도체 유한회사 | 바이폴라 접합 트랜지스터 및 그의 제조방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62216264A (ja) * | 1986-03-18 | 1987-09-22 | Fujitsu Ltd | 半導体装置の製造方法 |
US4752591A (en) * | 1987-06-15 | 1988-06-21 | Harris Corporation | Self-aligned contacts for bipolar process |
JP2534790B2 (ja) * | 1990-02-15 | 1996-09-18 | 三菱電機株式会社 | バイポ―ラトランジスタの製造方法 |
JP4698793B2 (ja) * | 2000-04-03 | 2011-06-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
-
2002
- 2002-06-29 KR KR1020020037552A patent/KR100897474B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101099563B1 (ko) * | 2004-07-21 | 2011-12-28 | 매그나칩 반도체 유한회사 | 바이폴라 접합 트랜지스터 및 그의 제조방법 |
KR101044387B1 (ko) * | 2004-07-22 | 2011-06-27 | 매그나칩 반도체 유한회사 | 바이폴라 접합 트랜지스터의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100897474B1 (ko) | 2009-05-14 |
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