KR20030084743A - 반도체 기판재를 코팅재로 코팅하는 방법과 코팅된 반도체기판 및 반도체 기판의 코팅 방법 - Google Patents

반도체 기판재를 코팅재로 코팅하는 방법과 코팅된 반도체기판 및 반도체 기판의 코팅 방법 Download PDF

Info

Publication number
KR20030084743A
KR20030084743A KR10-2003-0026221A KR20030026221A KR20030084743A KR 20030084743 A KR20030084743 A KR 20030084743A KR 20030026221 A KR20030026221 A KR 20030026221A KR 20030084743 A KR20030084743 A KR 20030084743A
Authority
KR
South Korea
Prior art keywords
coating
semiconductor substrate
mixture
adhesion promoter
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2003-0026221A
Other languages
English (en)
Korean (ko)
Inventor
진스알버트후아
메이핑
Original Assignee
휴렛-팩커드 디벨롭먼트 컴퍼니, 엘 피
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘 피 filed Critical 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘 피
Publication of KR20030084743A publication Critical patent/KR20030084743A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D175/00Coating compositions based on polyureas or polyurethanes; Coating compositions based on derivatives of such polymers
    • C09D175/04Polyurethanes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR10-2003-0026221A 2002-04-26 2003-04-25 반도체 기판재를 코팅재로 코팅하는 방법과 코팅된 반도체기판 및 반도체 기판의 코팅 방법 Withdrawn KR20030084743A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/133,724 2002-04-26
US10/133,724 US6762113B2 (en) 2002-04-26 2002-04-26 Method for coating a semiconductor substrate with a mixture containing an adhesion promoter

Publications (1)

Publication Number Publication Date
KR20030084743A true KR20030084743A (ko) 2003-11-01

Family

ID=28791024

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0026221A Withdrawn KR20030084743A (ko) 2002-04-26 2003-04-25 반도체 기판재를 코팅재로 코팅하는 방법과 코팅된 반도체기판 및 반도체 기판의 코팅 방법

Country Status (6)

Country Link
US (2) US6762113B2 (enExample)
EP (1) EP1357585A3 (enExample)
JP (1) JP2004006815A (enExample)
KR (1) KR20030084743A (enExample)
CN (1) CN1453822A (enExample)
TW (1) TW200305621A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762113B2 (en) * 2002-04-26 2004-07-13 Hewlett-Packard Development Company, L.P. Method for coating a semiconductor substrate with a mixture containing an adhesion promoter
KR20060115323A (ko) * 2003-10-14 2006-11-08 마쯔시다덴기산교 가부시키가이샤 트랜지스터 집적 회로 장치 및 그 제조 방법
US7635919B1 (en) 2005-05-26 2009-12-22 Rockwell Collins, Inc. Low modulus stress buffer coating in microelectronic devices
US20070298268A1 (en) * 2006-06-27 2007-12-27 Gelcore Llc Encapsulated optoelectronic device
JP4297943B2 (ja) * 2007-01-26 2009-07-15 中外炉工業株式会社 板状材の塗工方法
EP2577351B1 (en) 2010-05-24 2017-06-14 Koninklijke Philips N.V. Ct detector including multi-layer fluorescent tape scintillator with switchable spectral sensitivity
US8753460B2 (en) * 2011-01-28 2014-06-17 International Business Machines Corporation Reduction of edge chipping during wafer handling
DE102011114865B4 (de) * 2011-07-29 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
EP2836800B1 (en) * 2012-04-11 2020-06-24 University Of Virginia Patent Foundation Gaseous flow sensor and related method thereof
DE102016113162A1 (de) * 2015-07-28 2017-02-02 Schott Ag Bedienblende für ein Haushaltsgerät mit zumindest einer Benutzerschnittstelle, Haushaltsgerät und Verfahren zur Herstellung der Bedienblende mit Benutzerschnittstelle
CN108649192B (zh) * 2018-04-08 2019-08-16 河南大学 一种基于接触角测试制备电极材料表面均匀修饰层的方法
EP4350759A1 (en) 2022-10-06 2024-04-10 Nexperia B.V. A semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183839A (en) 1976-04-08 1980-01-15 John V. Long Polyimide resin-forming composition
DE3107633A1 (de) 1981-02-27 1982-09-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung duenner polyimidschichten"
US4604644A (en) * 1985-01-28 1986-08-05 International Business Machines Corporation Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making
DE3606266A1 (de) * 1986-02-27 1987-09-03 Basf Ag Lichtempfindliches aufzeichnungselement
US5024922A (en) * 1988-11-07 1991-06-18 Moss Mary G Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
US5133840A (en) 1990-05-15 1992-07-28 International Business Machines Corporation Surface midification of a polyimide
DE4119444A1 (de) * 1991-06-13 1992-12-17 Wolff Walsrode Ag Beschichtungssystem fuer wasserquellbare materialien
US5742075A (en) * 1994-10-07 1998-04-21 Iowa State University Research Foundation, Inc. Amorphous silicon on insulator VLSI circuit structures
US5635240A (en) * 1995-06-19 1997-06-03 Dow Corning Corporation Electronic coating materials using mixed polymers
US5965679A (en) 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
US6300162B1 (en) 2000-05-08 2001-10-09 Rockwell Collins Method of applying a protective layer to a microelectronic component
US6762113B2 (en) * 2002-04-26 2004-07-13 Hewlett-Packard Development Company, L.P. Method for coating a semiconductor substrate with a mixture containing an adhesion promoter

Also Published As

Publication number Publication date
US6762113B2 (en) 2004-07-13
CN1453822A (zh) 2003-11-05
US7071548B2 (en) 2006-07-04
US20040097097A1 (en) 2004-05-20
JP2004006815A (ja) 2004-01-08
EP1357585A2 (en) 2003-10-29
EP1357585A3 (en) 2005-04-20
TW200305621A (en) 2003-11-01
US20030203621A1 (en) 2003-10-30

Similar Documents

Publication Publication Date Title
KR20030084743A (ko) 반도체 기판재를 코팅재로 코팅하는 방법과 코팅된 반도체기판 및 반도체 기판의 코팅 방법
KR960037220A (ko) 연마 테이프, 그의 제조 방법 및 연마 테이프용 도공제
CA2244752A1 (en) Functional coated product and process for producing the same and the use thereof
TW200639448A (en) Optical films and process for making them
DE60206244D1 (de) Verfahren und vorrichtung zum beschichten mit "pick-und-place" einrichtungen mit gleichen oder im wesentlichen gleichen perioden
EP1375573A3 (en) Acrylic films prepared by coating methods
DE60022746D1 (de) Durch polymerabbau erhältliches nano-poröses material mit niedriger dielektrizitätskonstante
ATE90717T1 (de) Oberflaechenueberzug, herstellungs- und anwendungsverfahren und damit beschichtete oberflaechen.
CN104937694A (zh) 在多组分表面上的表面预处理和液滴铺展控制
US20090162566A1 (en) Method for the selective coating of a surface with liquid
Erickson et al. Application of package-level high-performance EMI shield material with a novel nozzleless spray coating technology
CN112055474B (zh) 使用液态防焊材料制作电路板防焊层的方法
Hedges et al. Mesoscale deposition technology for electronics applications
Liu et al. The effects of plasma surface modification on the molding adhesion properties of Film-BGA package
JPS6366237A (ja) シリコ−ン系被膜の表面処理方法
EP2507186B1 (en) Surface treatments and coatings
Masuda et al. Redistribution layer preparation on glass panel for panel level fan out package by photosensitive polyimide
CN110942981A (zh) 涂胶方法及半导体结构
BR0209971A (pt) Processo para a fabricação de componentes para equipamentos eletrônicos
TWI755286B (zh) 塗佈方法
JP2958466B2 (ja) シリコン酸化膜の製造方法
CN117101959A (zh) 一种提升点胶头出料稳定性的方法及应用
US6987070B2 (en) Method for forming low-k dielectric layer of semiconductor device
WO2025007115A2 (en) Surface activated chemical vapor deposition and uses thereof
TW202513165A (zh) 表面活化式化學氣相沉積及其用途

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20030425

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid