KR20030063039A - Icp 에쳐용 가스 확산판 - Google Patents
Icp 에쳐용 가스 확산판 Download PDFInfo
- Publication number
- KR20030063039A KR20030063039A KR1020020003587A KR20020003587A KR20030063039A KR 20030063039 A KR20030063039 A KR 20030063039A KR 1020020003587 A KR1020020003587 A KR 1020020003587A KR 20020003587 A KR20020003587 A KR 20020003587A KR 20030063039 A KR20030063039 A KR 20030063039A
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- plate
- flow path
- gas diffusion
- diffusion plate
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims abstract description 8
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000010304 firing Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 abstract description 22
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 49
- 238000005530 etching Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (4)
- ICP 에쳐의 공정챔버 내에 공정가스를 도입하기 위한 가스확산판에 있어서,소정 직경의 세라믹 볼들 또는 베스펠 볼들이 전체적으로 원형의 판재모양을 갖도록 압축 및 소성하여 만들어진 다공질 판체와;상기 판체의 일면에 형성된 가스 유로용 그루브;상기 판체의 타면을 덮는 동시에 균일 밀도로 분포된 복수의 관통공과, 상기 판체의 가스 유로용 그루브와 연결되는 유로를 가진 가스 분배판;을 구비하는, ICP 에쳐용 가스 확산판.
- 제1항에 있어서, 상기 세라믹 볼들 또는 베스펠 볼들의 각각의 직경이 0.5∼5㎜ 범위에 있는 것을 특징으로 하는, ICP 에쳐용 가스 확산판.
- 제1항에 있어서, 상기 세라믹 볼들 또는 베스펠 볼들의 외면에 접착액이 발라진 것을 특징으로하는, ICP 에쳐용 가스 확산판.
- 제1항에 있어서, 상기 가스 유로용 그루브가 방사 대칭형인 것을 특징으로 하는, ICP 에쳐용 가스 확산판.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0003587A KR100447248B1 (ko) | 2002-01-22 | 2002-01-22 | Icp 에쳐용 가스 확산판 |
US10/348,550 US7156950B2 (en) | 2002-01-22 | 2003-01-21 | Gas diffusion plate for use in ICP etcher |
TW092101290A TWI280621B (en) | 2002-01-22 | 2003-01-21 | Gas diffusion plate for use in ICP etcher |
CNB031007570A CN1293612C (zh) | 2002-01-22 | 2003-01-21 | 感应耦合型等离子体刻蚀装置中使用的气体扩散板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0003587A KR100447248B1 (ko) | 2002-01-22 | 2002-01-22 | Icp 에쳐용 가스 확산판 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030063039A true KR20030063039A (ko) | 2003-07-28 |
KR100447248B1 KR100447248B1 (ko) | 2004-09-07 |
Family
ID=19718725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2002-0003587A KR100447248B1 (ko) | 2002-01-22 | 2002-01-22 | Icp 에쳐용 가스 확산판 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7156950B2 (ko) |
KR (1) | KR100447248B1 (ko) |
CN (1) | CN1293612C (ko) |
TW (1) | TWI280621B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100589201B1 (ko) * | 2004-08-06 | 2006-06-14 | 한국과학기술연구원 | 가스 분배기 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI118158B (sv) * | 1999-10-15 | 2007-07-31 | Asm Int | Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess |
KR100447248B1 (ko) * | 2002-01-22 | 2004-09-07 | 주성엔지니어링(주) | Icp 에쳐용 가스 확산판 |
US20080241587A1 (en) * | 2004-03-29 | 2008-10-02 | Tadahiro Ohmi | Film-Forming Apparatus And Film-Forming Method |
CN100405537C (zh) * | 2005-12-07 | 2008-07-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体反应装置 |
CN100370593C (zh) * | 2005-12-16 | 2008-02-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 促进晶片刻蚀均匀的静电卡盘 |
US20070163716A1 (en) * | 2006-01-19 | 2007-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gas distribution apparatuses and methods for controlling gas distribution apparatuses |
US8382941B2 (en) | 2008-09-15 | 2013-02-26 | Micron Technology, Inc. | Plasma reactor with adjustable plasma electrodes and associated methods |
JP5501807B2 (ja) * | 2009-03-31 | 2014-05-28 | 東京エレクトロン株式会社 | 処理装置 |
JP5457109B2 (ja) * | 2009-09-02 | 2014-04-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5409413B2 (ja) * | 2010-01-26 | 2014-02-05 | 日本パイオニクス株式会社 | Iii族窒化物半導体の気相成長装置 |
JP2013012353A (ja) * | 2011-06-28 | 2013-01-17 | Hitachi High-Technologies Corp | プラズマ処理装置 |
CN102437002B (zh) * | 2011-11-29 | 2015-12-09 | 中国科学院微电子研究所 | 一种用于进气结构的匀气盘 |
CN103811258A (zh) * | 2012-11-06 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 等离子体反应腔 |
USD732092S1 (en) * | 2014-03-19 | 2015-06-16 | Veeco Ald Inc. | Gas injection plate |
USD732093S1 (en) * | 2014-03-19 | 2015-06-16 | Veeco Ald Inc. | Gas tube assembly |
KR102382823B1 (ko) | 2015-09-04 | 2022-04-06 | 삼성전자주식회사 | 에어 홀을 갖는 링 부재 및 그를 포함하는 기판 처리 장치 |
CN105506577B (zh) * | 2016-03-02 | 2018-01-23 | 安徽纯源镀膜科技有限公司 | 一种类金刚石薄膜离子源中离子的引出装置 |
CN112941546B (zh) * | 2021-01-26 | 2022-09-27 | 深圳市橘井舒泉技术有限公司 | 臭氧水制造机 |
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-
2002
- 2002-01-22 KR KR10-2002-0003587A patent/KR100447248B1/ko active IP Right Grant
-
2003
- 2003-01-21 CN CNB031007570A patent/CN1293612C/zh not_active Expired - Fee Related
- 2003-01-21 US US10/348,550 patent/US7156950B2/en not_active Expired - Fee Related
- 2003-01-21 TW TW092101290A patent/TWI280621B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100589201B1 (ko) * | 2004-08-06 | 2006-06-14 | 한국과학기술연구원 | 가스 분배기 |
Also Published As
Publication number | Publication date |
---|---|
US20030136516A1 (en) | 2003-07-24 |
US7156950B2 (en) | 2007-01-02 |
KR100447248B1 (ko) | 2004-09-07 |
CN1293612C (zh) | 2007-01-03 |
TWI280621B (en) | 2007-05-01 |
CN1437224A (zh) | 2003-08-20 |
TW200302521A (en) | 2003-08-01 |
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