KR20030059291A - 카본 나노튜브의 패턴 형성 방법 및 전계 방출형 냉음극과그 제조 방법 - Google Patents

카본 나노튜브의 패턴 형성 방법 및 전계 방출형 냉음극과그 제조 방법 Download PDF

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Publication number
KR20030059291A
KR20030059291A KR10-2003-7007245A KR20037007245A KR20030059291A KR 20030059291 A KR20030059291 A KR 20030059291A KR 20037007245 A KR20037007245 A KR 20037007245A KR 20030059291 A KR20030059291 A KR 20030059291A
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KR
South Korea
Prior art keywords
layer
cnt
film
carbon nanotubes
nanotubes
Prior art date
Application number
KR10-2003-7007245A
Other languages
English (en)
Korean (ko)
Inventor
이토후미노리
오카다유코
토미하리요시노리
코누마카즈오
오카모토아키히코
Original Assignee
닛본 덴끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000362395A external-priority patent/JP4802363B2/ja
Priority claimed from JP2001337441A external-priority patent/JP3843447B2/ja
Application filed by 닛본 덴끼 가부시끼가이샤 filed Critical 닛본 덴끼 가부시끼가이샤
Publication of KR20030059291A publication Critical patent/KR20030059291A/ko

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels
KR10-2003-7007245A 2000-11-29 2001-11-26 카본 나노튜브의 패턴 형성 방법 및 전계 방출형 냉음극과그 제조 방법 KR20030059291A (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00362395 2000-11-29
JP2000362395A JP4802363B2 (ja) 2000-11-29 2000-11-29 電界放出型冷陰極及び平面画像表示装置
JP2000367341 2000-12-01
JPJP-P-2000-00367341 2000-12-01
JP2001337441A JP3843447B2 (ja) 2000-12-01 2001-11-02 カーボンナノチューブのパターン形成方法
JPJP-P-2001-00337441 2001-11-02
PCT/JP2001/010276 WO2002045113A1 (fr) 2000-11-29 2001-11-26 Procede de formation de motif destine a un nanotube de carbone, cathode froide a emission de champ, et procede de fabrication de cette cathode

Publications (1)

Publication Number Publication Date
KR20030059291A true KR20030059291A (ko) 2003-07-07

Family

ID=27345293

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7007245A KR20030059291A (ko) 2000-11-29 2001-11-26 카본 나노튜브의 패턴 형성 방법 및 전계 방출형 냉음극과그 제조 방법

Country Status (2)

Country Link
KR (1) KR20030059291A (fr)
WO (1) WO2002045113A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100816815B1 (ko) * 2007-02-09 2008-03-26 주식회사 나모텍 탄소나노튜브를 이용한 표시장치용 기판과 그의 제조방법
KR100924766B1 (ko) * 2007-06-22 2009-11-05 삼성전자주식회사 금속 나노입자를 포함하는 탄소 나노튜브(ｃｎｔ) 박막 및그 제조방법

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US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7563711B1 (en) 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
CA2526946A1 (fr) 2003-05-14 2005-04-07 Nantero, Inc. Plate-forme de detection utilisant a element nanotubulaire non horizontal
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
CN101840997A (zh) * 2003-09-12 2010-09-22 索尼株式会社 用于制造场效应半导体器件的方法
EP1792320A4 (fr) 2004-09-21 2010-08-04 Nantero Inc Elements resistifs utilisant des nanotubes de carbone
US7567414B2 (en) 2004-11-02 2009-07-28 Nantero, Inc. Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
EP1825038B1 (fr) 2004-12-16 2012-09-12 Nantero, Inc. Liquide aqueux applicateurs de nanotubes de carbone et leur procede de production
US8941094B2 (en) 2010-09-02 2015-01-27 Nantero Inc. Methods for adjusting the conductivity range of a nanotube fabric layer
US9287356B2 (en) 2005-05-09 2016-03-15 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7835170B2 (en) 2005-05-09 2010-11-16 Nantero, Inc. Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
US9196615B2 (en) 2005-05-09 2015-11-24 Nantero Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US7598127B2 (en) 2005-05-12 2009-10-06 Nantero, Inc. Nanotube fuse structure
CA2621397A1 (fr) 2005-09-06 2007-03-15 Nantero, Inc. Procede et systeme d'utilisation de tissus de nanotubes comme elements de chauffage ohmique pour memoires et autres applications
WO2008054364A2 (fr) 2005-09-06 2008-05-08 Nantero, Inc. Nanotubes de carbone pour le transfert sélectif de chaleur à partir d'éléments électroniques
US8562937B2 (en) 2005-12-19 2013-10-22 Nantero Inc. Production of carbon nanotubes
US8110883B2 (en) 2007-03-12 2012-02-07 Nantero Inc. Electromagnetic and thermal sensors using carbon nanotubes and methods of making same
WO2009023304A2 (fr) * 2007-05-02 2009-02-19 Atomate Corporation Dispositifs à nanotubes de haute densité
TWI461350B (zh) 2007-05-22 2014-11-21 Nantero Inc 使用奈米結構物之三極管及其製造方法
WO2009155359A1 (fr) 2008-06-20 2009-12-23 Nantero, Inc. Matrices mémoires nram pourvues de blocs, de traces et de plans de nanotube, et leurs procédés de fabrication
US7915637B2 (en) 2008-11-19 2011-03-29 Nantero, Inc. Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same
US8895950B2 (en) 2009-10-23 2014-11-25 Nantero Inc. Methods for passivating a carbonic nanolayer
US8351239B2 (en) 2009-10-23 2013-01-08 Nantero Inc. Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
US8551806B2 (en) 2009-10-23 2013-10-08 Nantero Inc. Methods for passivating a carbonic nanolayer
US8222704B2 (en) 2009-12-31 2012-07-17 Nantero, Inc. Compact electrical switching devices with nanotube elements, and methods of making same
JP5896922B2 (ja) 2010-02-12 2016-03-30 ナンテロ，インク． ナノチューブファブリック層又はフィルム内の密度、多孔率及び／又は間隙サイズを制御するための方法
US10661304B2 (en) 2010-03-30 2020-05-26 Nantero, Inc. Microfluidic control surfaces using ordered nanotube fabrics
EP2552826A4 (fr) 2010-03-30 2013-11-13 Nantero Inc Procédés d'agencement d'éléments nanoscopiques dans réseaux, tissus et films
US9650732B2 (en) 2013-05-01 2017-05-16 Nantero Inc. Low defect nanotube application solutions and fabrics and methods for making same
US10654718B2 (en) 2013-09-20 2020-05-19 Nantero, Inc. Scalable nanotube fabrics and methods for making same
US9299430B1 (en) 2015-01-22 2016-03-29 Nantero Inc. Methods for reading and programming 1-R resistive change element arrays
US9941001B2 (en) 2016-06-07 2018-04-10 Nantero, Inc. Circuits for determining the resistive states of resistive change elements
US9934848B2 (en) 2016-06-07 2018-04-03 Nantero, Inc. Methods for determining the resistive states of resistive change elements

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EP1036402B1 (fr) * 1997-12-04 2003-07-16 Printable Field Emitters Limited Materiaux a emission electronique par effet de champ et procede de fabrication
JP2000277002A (ja) * 1999-03-25 2000-10-06 Matsushita Electric Ind Co Ltd 電子放出素子の製造方法
JP2000285795A (ja) * 1999-03-31 2000-10-13 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置
JP3553414B2 (ja) * 1999-04-28 2004-08-11 シャープ株式会社 電子源アレイと、その製造方法、及び前記電子源アレイまたはその製造方法を用いて形成される画像形成装置
US6277318B1 (en) * 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100816815B1 (ko) * 2007-02-09 2008-03-26 주식회사 나모텍 탄소나노튜브를 이용한 표시장치용 기판과 그의 제조방법
KR100924766B1 (ko) * 2007-06-22 2009-11-05 삼성전자주식회사 금속 나노입자를 포함하는 탄소 나노튜브(ｃｎｔ) 박막 및그 제조방법

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