KR20030023456A - 수계 레지스트 박리액 관리장치 및 수계 레지스트 박리액관리방법 - Google Patents

수계 레지스트 박리액 관리장치 및 수계 레지스트 박리액관리방법 Download PDF

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Publication number
KR20030023456A
KR20030023456A KR1020020035235A KR20020035235A KR20030023456A KR 20030023456 A KR20030023456 A KR 20030023456A KR 1020020035235 A KR1020020035235 A KR 1020020035235A KR 20020035235 A KR20020035235 A KR 20020035235A KR 20030023456 A KR20030023456 A KR 20030023456A
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KR
South Korea
Prior art keywords
resist stripping
liquid
concentration
aqueous
aqueous resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020035235A
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English (en)
Korean (ko)
Inventor
나카가와도시모토
가타기리유코
오가와슈
모리타사토루
기쿠가와마코토
Original Assignee
가부시키가이샤 히라마리카겐큐죠
나가세 상교오 가부시키가이샤
나가세 씨엠에스 테크놀로지 가부시키가이샤
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Application filed by 가부시키가이샤 히라마리카겐큐죠, 나가세 상교오 가부시키가이샤, 나가세 씨엠에스 테크놀로지 가부시키가이샤 filed Critical 가부시키가이샤 히라마리카겐큐죠
Publication of KR20030023456A publication Critical patent/KR20030023456A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/12—Condition responsive control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020020035235A 2001-06-25 2002-06-24 수계 레지스트 박리액 관리장치 및 수계 레지스트 박리액관리방법 Ceased KR20030023456A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00191703 2001-06-25
JP2001191703A JP3914722B2 (ja) 2001-06-25 2001-06-25 水系レジスト剥離液管理装置及び水系レジスト剥離液管理方法

Publications (1)

Publication Number Publication Date
KR20030023456A true KR20030023456A (ko) 2003-03-19

Family

ID=19030286

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020035235A Ceased KR20030023456A (ko) 2001-06-25 2002-06-24 수계 레지스트 박리액 관리장치 및 수계 레지스트 박리액관리방법

Country Status (5)

Country Link
US (1) US7109037B2 (https=)
JP (1) JP3914722B2 (https=)
KR (1) KR20030023456A (https=)
CN (1) CN1295568C (https=)
TW (1) TWI312105B (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100652044B1 (ko) * 2001-12-18 2006-11-30 엘지.필립스 엘시디 주식회사 스트립 장치
US7867696B2 (en) * 2004-04-15 2011-01-11 The Boeing Company Method and apparatus for monitoring saturation levels of solvents used during rapid prototyping processes
US20070289905A1 (en) * 2006-06-20 2007-12-20 Biofuels Automation, Inc. System for managing solution for cleaning fermentation tanks
US8545636B2 (en) * 2006-07-27 2013-10-01 Atmel Corporation Conductivity control of water content in solvent strip baths
US7935642B2 (en) * 2007-11-16 2011-05-03 General Electric Company Replenishment method for an advanced coating removal stripping solution
JP5712051B2 (ja) * 2011-05-20 2015-05-07 パナソニック株式会社 剥離液リサイクルシステムと運転方法および剥離液のリサイクル方法
KR20140030185A (ko) * 2011-05-20 2014-03-11 파나소닉 주식회사 포토레지스트용 박리액, 박리액 리사이클 시스템과 운전 방법 및 박리액의 리사이클 방법
JP2013183080A (ja) * 2012-03-02 2013-09-12 Mitsubishi Gas Chemical Co Inc レジスト剥離液の劣化抑制方法、レジスト剥離方法及びシステム
US8877084B2 (en) 2012-06-22 2014-11-04 General Electric Company Method for refreshing an acid bath solution
JP6041260B2 (ja) * 2012-10-11 2016-12-07 パナソニックＩｐマネジメント株式会社 レジスト剥離液の調合槽からのサンプリング方法およびサンプリング装置
JP6249217B2 (ja) * 2013-12-27 2017-12-20 パナソニックＩｐマネジメント株式会社 レジスト剥離液の組成比維持装置およびレジスト剥離液の組成比維持方法
JP6681066B2 (ja) * 2016-03-14 2020-04-15 株式会社平間理化研究所 水系レジスト剥離液の調製装置および非水系レジスト剥離液の調製装置
KR20240132482A (ko) 2017-04-21 2024-09-03 신라젠(주) 항암 백시니아 바이러스와 관문 저해제 병용 요법
JP7770107B2 (ja) * 2021-05-10 2025-11-14 東京エレクトロン株式会社 基板処理装置および基板処理方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1083946A (ja) * 1996-09-06 1998-03-31 Fujitsu Ltd レジスト剥離液管理方法及びレジスト剥離装置
KR980011722A (ko) * 1996-07-02 1998-04-30 도시모또 나까가와 레지스터박리액관리장치
KR19990036502A (ko) * 1997-10-27 1999-05-25 나가세 히데오 레지스트박리액 관리장치
KR19990062480A (ko) * 1997-12-03 1999-07-26 이부섭 레지스트 박리액, 이를 이용한 레지스트 박리방법, 레지스트 박리액 재생장치, 및 레지스트 박리액 관리장치
JPH11224873A (ja) * 1998-02-05 1999-08-17 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000338684A (ja) * 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
JP2001223153A (ja) * 2000-02-10 2001-08-17 Mitsubishi Electric Corp レジスト剥離装置およびレジスト剥離液管理方法、並びに半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2602179B2 (ja) 1993-12-29 1997-04-23 株式会社平間理化研究所 レジスト剥離液管理装置
TW256929B (https=) * 1993-12-29 1995-09-11 Hirama Rika Kenkyusho Kk
US6235641B1 (en) * 1998-10-30 2001-05-22 Fsi International Inc. Method and system to control the concentration of dissolved gas in a liquid

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR980011722A (ko) * 1996-07-02 1998-04-30 도시모또 나까가와 레지스터박리액관리장치
JPH1083946A (ja) * 1996-09-06 1998-03-31 Fujitsu Ltd レジスト剥離液管理方法及びレジスト剥離装置
KR19990036502A (ko) * 1997-10-27 1999-05-25 나가세 히데오 레지스트박리액 관리장치
KR19990062480A (ko) * 1997-12-03 1999-07-26 이부섭 레지스트 박리액, 이를 이용한 레지스트 박리방법, 레지스트 박리액 재생장치, 및 레지스트 박리액 관리장치
JPH11224873A (ja) * 1998-02-05 1999-08-17 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2000338684A (ja) * 1999-05-26 2000-12-08 Nagase & Co Ltd 基板表面処理装置
JP2001223153A (ja) * 2000-02-10 2001-08-17 Mitsubishi Electric Corp レジスト剥離装置およびレジスト剥離液管理方法、並びに半導体装置およびその製造方法

Also Published As

Publication number Publication date
CN1295568C (zh) 2007-01-17
CN1407411A (zh) 2003-04-02
US20020197869A1 (en) 2002-12-26
JP2003005387A (ja) 2003-01-08
US7109037B2 (en) 2006-09-19
JP3914722B2 (ja) 2007-05-16
TWI312105B (https=) 2009-07-11

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