KR20020032663A - Semiconductor package - Google Patents
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- KR20020032663A KR20020032663A KR1020000062951A KR20000062951A KR20020032663A KR 20020032663 A KR20020032663 A KR 20020032663A KR 1020000062951 A KR1020000062951 A KR 1020000062951A KR 20000062951 A KR20000062951 A KR 20000062951A KR 20020032663 A KR20020032663 A KR 20020032663A
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/07—Structure, shape, material or disposition of the bonding areas after the connecting process
- H01L24/09—Structure, shape, material or disposition of the bonding areas after the connecting process of a plurality of bonding areas
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
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- H01L2224/73215—Layer and wire connectors
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Description
본 발명은 반도체패키지에 관한 것으로, 더욱 상세하게 설명하면 센터패드형(Center Pad Type) 반도체칩 또는 센터패드형 및 엣지패드형(Edge Pad Type) 반도체칩을 혼합하여 칩싸이즈(Chip Size) 크기로 스택하는 동시에, 방열 성능을 극대화할 수 있는 반도체패키지에 관한 것이다.The present invention relates to a semiconductor package, and in more detail, a center pad type semiconductor chip or a center pad type and an edge pad type semiconductor chip are mixed to form a chip size. The present invention relates to a semiconductor package capable of stacking and maximizing heat dissipation performance.
통상 반도체패키지는 반도체칩을 외부 환경으로부터 안전하게 보호함은 물론, 그 반도체칩과 마더보드(Mother Board)와의 전기적 신호가 용이하게 교환되도록 한 것을 말한다.In general, the semiconductor package not only protects the semiconductor chip from the external environment, but also means that the electrical signal between the semiconductor chip and the motherboard is easily exchanged.
최근에는 상기한 반도체패키지 내부에 다수의 반도체칩을 적층함으로써 고기능화를 구현한 적층형 반도체패키지가 출시되고 있으며, 이러한 종래의 통상적인 적층형 반도체패키지(100')를 도1에 도시하였다.Recently, a multilayer semiconductor package having high functionality by stacking a plurality of semiconductor chips inside the semiconductor package has been released. Such a conventional multilayer semiconductor package 100 'is shown in FIG.
도시된 바와 같이 통상 수지층(18')을 중심으로 상,하면에 본드핑거(20a') 및 랜드(20b')를 갖는 회로패턴(20')이 형성되어 있고, 상기 회로패턴(20')의 표면은 커버코트(23')로 코팅된 회로기판(16')이 구비되어 있다.As illustrated, circuit patterns 20 'having bond fingers 20a' and lands 20b 'are formed on upper and lower surfaces of the resin layer 18', and the circuit patterns 20 'are formed. The surface of the circuit board 16 'is coated with a cover coat 23'.
또한, 상기 회로기판(16')의 상면 중앙부에는 제1반도체칩(2')이 접착층에 의해 접착되어 있고, 상기 제1반도체칩(2')의 상면에는 제2반도체칩(6')이 접착층으로 접착되어 있다. 물론, 상기 제1반도체칩(2') 및 제2반도체칩(6')의 상면 둘레에는 다수의 입출력패드(4',8')가 형성되어 있다(이러한 반도체칩을 통상 엣지패드형 반도체칩이라 함). 상기 제1반도체칩(2') 및 제2반도체칩(6')의 입출력패드(4',8')는 각각 회로기판(16')에 형성된 회로패턴(20')중본드핑거(20a')에 도전성와이어(60')로 본딩되어 있다. 또한, 제1반도체칩(2'), 제2반도체칩(6'), 도전성와이어(60') 및 회로기판(16')의 상면은 봉지재(40')로 봉지되어 있다. 상기 회로기판(16')의 하면에 형성된 회로패턴(20')중 랜드(20b')에는 다수의 도전성볼(50')이 융착되어 있으며, 이 도전성볼(50')이 차후 마더보드의 소정 패턴에 본딩된다. 도면중 미설명 부호 20c'는 도전성 비아홀이다.In addition, the first semiconductor chip 2 'is bonded to the center of the upper surface of the circuit board 16' by an adhesive layer, and the second semiconductor chip 6 'is attached to the upper surface of the first semiconductor chip 2'. It is bonded by an adhesive layer. Of course, a plurality of input / output pads 4 'and 8' are formed around the upper surfaces of the first semiconductor chip 2 'and the second semiconductor chip 6' (these semiconductor chips are typically edge pad type semiconductor chips). ). I / O pads 4 'and 8' of the first semiconductor chip 2 'and the second semiconductor chip 6' are bonded to each other in the circuit pattern 20 'formed on the circuit board 16'. Is bonded to the conductive wire 60 '. In addition, the upper surface of the first semiconductor chip 2 ', the second semiconductor chip 6', the conductive wire 60 ', and the circuit board 16' is sealed with an encapsulant 40 '. A plurality of conductive balls 50 'are fused to the lands 20b' of the circuit pattern 20 'formed on the bottom surface of the circuit board 16', and the conductive balls 50 'are subsequently formed on the motherboard. Bonded to the pattern. In the figure, reference numeral 20c 'denotes a conductive via hole.
이러한 반도체패키지(100')는 제1반도체칩(2') 및 제2반도체칩(6')의 전기적 신호가 도전성와이어(60'), 회로기판(16')의 본드핑거(20a'), 도전성 비아홀(20c'), 랜드 (20b') 및 도전성볼(50')을 통해서 마더보드와 교환되며, 두개의 반도체칩이 적층된 상태이므로 반도체패키지가 고용량, 고기능화되고 또한 실장밀도를 높일 수 있는 장점이 있다.In the semiconductor package 100 ', the electrical signals of the first semiconductor chip 2' and the second semiconductor chip 6 'are transmitted to the conductive wire 60', the bond finger 20a 'of the circuit board 16', It is exchanged with the motherboard through the conductive via hole 20c ', the land 20b' and the conductive ball 50 ', and since the two semiconductor chips are stacked, the semiconductor package can have high capacity, high functionality and high mounting density. There is an advantage.
그러나, 상기 제1반도체칩 및 제2반도체칩은 모두 엣지패드형 반도체칩으로서 센터패드형 반도체칩은 스택할 수 없는 단점을 가지고 있다. 즉, 회로 설계상 센터패드형 반도체칩으로 제조할 수 밖에 없는 경우가 있는데, 이러한 센터패드형 반도체칩은 스택형 반도체패키지에 전혀 탑재할 수 없는 한계가 있다.However, the first semiconductor chip and the second semiconductor chip are both edge pad type semiconductor chips, and the center pad type semiconductor chips cannot be stacked. In other words, the circuit design has to be manufactured with a center pad type semiconductor chip, but such a center pad type semiconductor chip cannot be mounted in a stack type semiconductor package at all.
또한, 상기 제1반도체칩의 입출력패드에 본딩되는 도전성와이어와의 접촉을 피하기 위해, 상기 제2반도체칩의 넓이 또는 부피가 상기 제1반도체칩의 넓이 또는 부피보다 반듯이 작아야 하는 단점이 있다. 즉, 상기 제2반도체칩의 부피가 제1반도체칩의 부피와 같거나 클 경우에는 그 제2반도체칩의 저면과 도전성와이어가 상호 쇼트됨으로써 제1반도체칩의 전기적 기능이 마비되는 문제가 있어, 반듯이 그 제2반도체칩의 크기가 제1반도체칩의 크기보다 작아야 한다.In addition, in order to avoid contact with conductive wires bonded to the input / output pads of the first semiconductor chip, the width or volume of the second semiconductor chip must be less than the width or volume of the first semiconductor chip. That is, when the volume of the second semiconductor chip is equal to or larger than the volume of the first semiconductor chip, the bottom surface of the second semiconductor chip and the conductive wire are shorted to each other, thereby causing paralysis of the electrical function of the first semiconductor chip. On the contrary, the size of the second semiconductor chip should be smaller than that of the first semiconductor chip.
이러한 문제들은 동일한 크기의 반도체칩을 다수 적층하여야 하는 메모리 반도체패키지(예를 들면 다수의 DRAM, ASIC, Flash 또는 SRAM을 적층한 반도체패키지)에 적용할 수 없어, 패키징할 수 있는 반도체칩의 종류를 극히 제한시키고 있다.These problems cannot be applied to a memory semiconductor package (for example, a semiconductor package in which a plurality of DRAMs, ASICs, Flashes, or SRAMs are stacked) in which multiple semiconductor chips of the same size must be stacked. It is extremely limited.
더불어, 상기 제1반도체칩 및 제2반도체칩 모두 봉지재로 감싸여져 있어, 그 반도체칩의 방열성능이 저조한 문제점이 있다. 이는 스택되는 반도체칩이 점차 고기능화, 고집적화됨에 따라 심각한 문제로 대두되고 있다.In addition, since both the first semiconductor chip and the second semiconductor chip are wrapped with an encapsulant, there is a problem in that the heat dissipation performance of the semiconductor chip is poor. This is a serious problem as stacking semiconductor chips become increasingly functional and highly integrated.
따라서 본 발명은 상기와 같은 종래의 문제점을 해결하기 위해 안출한 것으로, 센터패드형 반도체칩을 어레이(Array)시킴과 동시에 스택하여 고기능, 고집적화한 반도체패키지를 제공하는데 있다.Therefore, the present invention has been made to solve the above-mentioned conventional problems, and to provide a high-performance, highly integrated semiconductor package by stacking and stacking the center pad-type semiconductor chip at the same time (Array).
또한, 본 발명의 다른 목적은 센터패드형과 엣지패드형 반도체칩을 혼합하여 어레이 및 스택할 수 있는 반도체패키지를 제공하는데 있다.In addition, another object of the present invention is to provide a semiconductor package that can be arrayed and stacked by mixing a center pad type and an edge pad type semiconductor chip.
본 발명의 또다른 목적은 칩싸이즈 크기로 다수의 반도체칩을 스택 및 어레이할 수 있는 반도체패키지를 제공하는데 있다.Still another object of the present invention is to provide a semiconductor package capable of stacking and arraying a plurality of semiconductor chips in chip size size.
본 발명의 또다른 목적은 방열성능이 우수한 반도체패키지를 제공하는데 있다.Still another object of the present invention is to provide a semiconductor package having excellent heat dissipation performance.
도1은 종래의 반도체패키지를 도시한 단면도이다.1 is a cross-sectional view showing a conventional semiconductor package.
도2a 내지 도2c는 본 발명에 의한 반도체패키지를 도시한 단면도이다.2A to 2C are cross-sectional views showing a semiconductor package according to the present invention.
도3은 본 발명에 의한 다른 반도체패키지를 도시한 단면도이다.3 is a cross-sectional view showing another semiconductor package according to the present invention.
도4는 본 발명에 의한 또다른 반도체패키지를 도시한 단면도이다.4 is a cross-sectional view showing another semiconductor package according to the present invention.
- 도면중 주요 부호에 대한 설명 --Description of the main symbols in the drawings-
101~105; 본 발명에 의한 반도체패키지101-105; Semiconductor package according to the present invention
1; 제1반도체칩1a,2a,10a; 제1면One; First semiconductor chip 1a, 2a, 10a; Front page
1b,2b,10b; 제2면1c,2c; 입출력패드1b, 2b, 10b; Second surface 1c, 2c; I / O pad
2; 제2반도체칩10; 섭스트레이트2; Second semiconductor chip 10; Substrate
11; 수지층12; 회로패턴11; Resin layer 12; Circuit pattern
12a; 본드핑거12b; 랜드12a; Bondfinger 12b; rand
14; 커버코트15; 관통공14; Cover coat 15; Through hole
20; 접속수단40; 봉지재20; Connection means 40; Encapsulant
50; 도전성볼50; Conductive ball
상기한 목적을 달성하기 위해 본 발명에 의한 반도체패키지는 대략 평면인 제1면과 제2면을 갖고, 상기 제1면에는 다수의 입출력패드가 형성된 동시에, 일정거리 이격된 채 동일면 상에 위치된 적어도 2개 이상의 제1반도체칩과; 대략 평면인 제1면과 제2면을 갖고, 상기 각각의 제1반도체칩이 이루는 이격 공간 사이에 입출력패드가 위치된 제2반도체칩과; 대략 평면인 제1면과 제2면을 갖고, 상기 제1반도체칩의 제1면이 상기 제2면에 접착되며, 다수의 도전성 회로패턴이 형성된 섭스트레이트와; 상기 제1반도체칩 및 제2반도체칩의 입출력패드와 섭스트레이트의 회로패턴을 전기적으로 접속시키는 접속수단과; 상기 접속수단 및 그 주위를 봉지하는 봉지재와; 상기 섭스트레이트의 회로패턴에 융착된 다수의 도전성볼을 포함하여 이루어진 것을 특징으로 한다.In order to achieve the above object, the semiconductor package according to the present invention has a first plane and a second plane which are substantially planar, and a plurality of input / output pads are formed on the first surface, and are located on the same surface spaced apart at a certain distance. At least two first semiconductor chips; A second semiconductor chip having a first plane and a second plane which are substantially planar, and an input / output pad positioned between the spaces formed by the first semiconductor chips; A substrate having a first plane and a second plane that are substantially planar, and wherein a first surface of the first semiconductor chip is bonded to the second surface, and a plurality of conductive circuit patterns are formed; Connection means for electrically connecting the input / output pads of the first semiconductor chip and the second semiconductor chip with the circuit pattern of the substrate; An encapsulant for encapsulating the connecting means and its surroundings; It characterized in that it comprises a plurality of conductive balls fused to the circuit pattern of the substrate.
상기 제1반도체칩은 제1면 중앙에 다수의 입출력패드가 형성되어 있고, 상기 입출력패드와 대응되는 섭스트레이트에는 일정 크기의 관통공이 형성될 수 있다.In the first semiconductor chip, a plurality of input / output pads may be formed in the center of the first surface, and through-holes having a predetermined size may be formed in the substrate corresponding to the input / output pads.
상기 제1반도체칩은 제1면 가장자리에 다수의 입출력패드가 형성되어 있고, 상기 입출력패드와 대응되는 섭스트레이트에는 일정 크기의 관통공이 형성될 수도 있다.The first semiconductor chip may include a plurality of input / output pads formed at edges of the first surface, and through holes having a predetermined size may be formed in the substrate corresponding to the input / output pads.
여기서, 상기 제2반도체칩은 제1면이 상기 각 제1반도체칩의 제2면에 걸치어 접착되고, 상기 제2반도체칩의 입출력패드는 상기 각 제1반도체칩의 이격된 공간 사이에 위치될 수 있다.The second semiconductor chip may have a first surface bonded to the second surface of each of the first semiconductor chips, and an input / output pad of the second semiconductor chip may be located between the spaced spaces of the first semiconductor chip. Can be.
또한, 상기 제2반도체칩은 제2면이 상기 각 제1반도체칩의 제1면에 접착된 섭스트레이트의 제1면에 걸치어 접착되고, 상기 제2반도체칩의 입출력패드는 상기 각 제1반도체칩의 이격된 공간 사이에 위치될 수도 있다.In addition, the second semiconductor chip has a second surface bonded to the first surface of the substrate bonded to the first surface of each of the first semiconductor chip, the input and output pads of the second semiconductor chip is the first It may be located between the spaced space of the semiconductor chip.
계속해서, 상기 제1반도체칩은 제2반도체칩과 접착된 영역을 제외한 제2면및 측면과, 상기 제2반도체칩은 제2면과 측면 전체가 외부로 노출될 수 있다.Subsequently, the first semiconductor chip may have a second surface and a side surface excluding a region bonded to the second semiconductor chip, and the second semiconductor chip may be exposed to the outside.
또한, 상기 섭스트레이트는 각각의 제1반도체칩 측단으로부터 외측으로 더 연장될 수 있다.In addition, the substrate may further extend outwardly from each side of the first semiconductor chip.
또한, 상기 제1반도체칩의 제2면과 제2반도체칩의 측면 사이에는 봉지재가 충진될 수 있다.In addition, an encapsulant may be filled between the second surface of the first semiconductor chip and the side surface of the second semiconductor chip.
또한, 상기 제2반도체칩의 제2면이 섭스트레이트의 제1면에 접착된 경우에는 상기 제2반도체칩의 제1면이 외부로 노출될 수 있다.In addition, when the second surface of the second semiconductor chip is bonded to the first surface of the substrate, the first surface of the second semiconductor chip may be exposed to the outside.
더불어, 상기 섭스트레이트는 수지층을 중심으로, 상기 제2면에는 다수의 본드핑거 및 랜드를 갖는 도전성 회로패턴이 형성되며, 상기 본드핑거 및 랜드를 제외한 회로패턴 및 수지층은 커버코트로 코팅된 인쇄회로기판, 써킷필름 또는 써킷테이프중 어느 하나일 수 있다.In addition, the substrate is formed around the resin layer, and a conductive circuit pattern having a plurality of bond fingers and lands is formed on the second surface, and the circuit patterns and resin layers except for the bond fingers and lands are coated with a cover coat. It may be one of a printed circuit board, a circuit film or a circuit tape.
상기와 같이 하여 본 발명에 의한 반도체패키지에 의하면, 센터패드형 반도체칩을 어레이시킴과 동시에 스택하여 고기능, 고집적화된 반도체패키지를 구현하게 된다.As described above, according to the semiconductor package according to the present invention, the center pad-type semiconductor chip is arrayed and stacked, thereby implementing a high-function, highly integrated semiconductor package.
또한, 센터패드형 반도체칩을 어레이시킴과 동시에 엣지패드형 반도체칩을 스택할 수 있어, 다양한 종류의 반도체칩을 혼합하여 어레이 및 스택할 수 있게 된다.In addition, since the center pad semiconductor chip can be arrayed and the edge pad semiconductor chip can be stacked, various types of semiconductor chips can be mixed and arrayed and stacked.
또한, 반도체패키지의 넓이가 칩싸이즈 크기로 됨으로써, 초소형의 반도체패키지를 제공하게 된다.In addition, the width of the semiconductor package is made the size of the chip size, thereby providing a very small semiconductor package.
더불어, 스택된 반도체칩의 일면 또는 어레이된 반도체칩의 일정 영역을 외부로 직접 노출시킴으로써 방열 성능을 향상시키게 된다.In addition, heat dissipation performance may be improved by directly exposing a surface of the stacked semiconductor chip or a predetermined region of the arrayed semiconductor chip to the outside.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명을 용이하게 실시할 수 있을 정도로 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 상세하게 설명하면 다음과 같다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings such that those skilled in the art may easily implement the present invention.
먼저, 도2a 내지 도2c는 본 발명에 의한 반도체패키지(101,102,103)를 도시한 단면도이다.2A to 2C are cross-sectional views showing semiconductor packages 101, 102, and 103 according to the present invention.
도시된 바와 같이 대략 평면인 제1면(1a)과 제2면(1b)을 갖고, 상기 제1면(1a)의 중앙에는 다수의 입출력패드(1c)가 형성되며, 일정 거리 이격된 채, 동일면상에 2개의 센터패드형 제1반도체칩(1)이 위치되어 있다.As shown in the drawing, the first surface 1a and the second surface 1b are substantially planar, and a plurality of input / output pads 1c are formed at the center of the first surface 1a and spaced apart from each other by a predetermined distance. Two center pad type first semiconductor chips 1 are located on the same surface.
또한, 대략 평면인 제1면(2a)과 제2면(2b)을 갖고, 상기 각각의 제1반도체칩(1)이 이루는 소정의 이격된 공간에 입출력패드(2c)가 위치하도록 제2반도체칩(2)이 상기 제1반도체칩(1)의 제2면(1b)에 걸치어 접착되어 있다. 즉, 제1면(2a) 중앙에 다수의 입출력패드(2c)가 형성된 센터패드형 제2반도체칩(2)은 상기 제1반도체칩(1)의 제2면(1b) 사이에 걸치어 접착됨으로써, 상기 각 제1반도체칩(1)의 이격된 공간 사이에 다수의 입출력패드(2c)가 위치하게 된다.In addition, the second semiconductor has a first plane 2a and a second plane 2b which are substantially planar, and the input / output pad 2c is positioned in a predetermined spaced space formed by each of the first semiconductor chips 1. The chip 2 is bonded over the second surface 1b of the first semiconductor chip 1. That is, the center pad type second semiconductor chip 2 having a plurality of input / output pads 2c formed in the center of the first surface 2a is bonded across the second surface 1b of the first semiconductor chip 1. As a result, a plurality of input / output pads 2c are positioned between the spaced spaces of the first semiconductor chips 1.
계속해서, 상기 각각의 제1반도체칩(1) 제1면(1a)에는 섭스트레이트(10)가 접착되어 있다. 상기 섭스트레이트(10) 역시 대략 평면인 제1면(10a)과 제2면(10b)을 가지며, 그 표면에는 도전성 회로패턴(12)이 형성되어 있으며, 상기 섭스트레이트(10)의 제2면(10b)이 제1반도체칩(1)의 제1면(1a)에 접착된 것이다.Subsequently, the substrate 10 is bonded to the first surface 1a of each of the first semiconductor chips 1. The substrate 10 also has a substantially planar first surface 10a and a second surface 10b, and a conductive circuit pattern 12 is formed on the surface thereof, and the second surface of the substrate 10 is formed. 10b is bonded to the first surface 1a of the first semiconductor chip 1.
상기 섭스트레이트(10)는 수지층(11)을 기본층으로 그 표면에 본드핑거(12a)및 랜드(12b)를 포함하는 회로패턴(12)이 형성되어 있다. 또한, 상기 제1반도체칩(1)의 입출력패드(1c)와 간섭하지 않토록 그것과 대응되는 영역에는 일정 크기의 관통공(15)이 형성되어 있다.The substrate 10 has a resin layer 11 as a base layer, and a circuit pattern 12 including bond fingers 12a and lands 12b is formed on a surface thereof. Also, a through hole 15 having a predetermined size is formed in a region corresponding to the input / output pad 1c of the first semiconductor chip 1 so as not to interfere with the input / output pad 1c.
여기서, 상기 회로패턴(12)중 본드핑거(12a)는 상기 관통공(15)의 외주연에 형성되고, 상기 본드핑거(12a)와 연결되어 랜드(12b)가 형성되어 있다. 더불어, 서로 마주하는 제1반도체칩(1)의 둘레 영역인 수지층(11)에도 본드핑거(12a)가 형성되어 있다. 또한, 상기 본드핑거(12a) 및 랜드(12b)를 제외한 회로패턴(12) 및 수지층(11) 표면은 커버코트(14)로 코팅되어 있다.Here, the bond finger 12a of the circuit pattern 12 is formed at the outer circumference of the through hole 15, and is connected to the bond finger 12a to form a land 12b. In addition, a bond finger 12a is formed in the resin layer 11, which is a circumferential region of the first semiconductor chip 1 facing each other. In addition, the surface of the circuit pattern 12 and the resin layer 11 except for the bond finger 12a and the land 12b is coated with a cover coat 14.
이러한 섭스트레이트(10)는 주지된 인쇄회로기판, 써킷필름 또는 써킷테이프중 어느 하나를 선택하여 이용할 수 있을 것이다.Such a substrate 10 may be used by selecting any one of a well-known printed circuit board, a circuit film or a circuit tape.
이어서, 상기 제1반도체칩(1)의 입출력패드(1c)는 섭스트레이트(10)의 관통공(15)을 통과하여 그것의 외주연에 위치하는 본드핑거(12a)와 도전성와이어와 같은 접속수단(20)에 의해 상호 접속되어 있다. 상기 도전성와이어는 주지의 골드와이어 또는 알루미늄와이어 등이 이용될 수 있다. 또한, 도시하지는 않았지만 상기 접속수단(20)은 상기 관통공(15) 내측으로 본드핑거(12a)를 길게 늘려 입출력패드(1c)에 갱본딩(Gang Bonding)이나 탭본딩(TAB Bonding)과 같은 방법으로 접속시킬 수도 있다.Subsequently, the input / output pad 1c of the first semiconductor chip 1 passes through the through hole 15 of the substrate 10 and is connected to bond fingers 12a and conductive wires, which are positioned at the outer circumference thereof. Interconnected by (20). As the conductive wire, known gold wire or aluminum wire may be used. In addition, although not shown, the connecting means 20 extends the bond finger 12a to the inside of the through hole 15 such that a gang bonding or a tab bonding is performed on the input / output pad 1c. You can also connect
또한, 상기 제2반도체칩(2)의 입출력패드(2c) 역시 상기 각 제1반도체칩(1) 사이에 형성된 소정의 공간을 통과하여 상기 제1반도체칩(1)에 접착된 섭스트레이트(10)의 본드핑거(12a)와 도전성와이어와 같은 전기적 접속수단(20)에 의해 상호접속될 수 있다.In addition, the input and output pads 2c of the second semiconductor chip 2 also pass through a predetermined space formed between each of the first semiconductor chips 1 and the substrate 10 bonded to the first semiconductor chip 1. Can be interconnected by a bond finger 12a and electrical connection means 20, such as conductive wires.
계속해서, 상기 제1반도체칩(1) 및 제2반도체칩(2)의 입출력패드(1c,2c)와 섭스트레이트(10)의 본드핑거(12a)를 상호 접속하는 접속수단(20)은 공기 또는 외부에 대한 부식등 여러가지 원인에 의한 전기적 열화로부터 보호하고 기계적인 안정성을 도모하기 위해 에폭시 몰딩 컴파운드와 같은 봉지재(40)로 봉지되어 있다.Subsequently, the connection means 20 for interconnecting the input / output pads 1c and 2c of the first semiconductor chip 1 and the second semiconductor chip 2 and the bond fingers 12a of the substrate 10 is air. Or, it is sealed with an encapsulant 40 such as an epoxy molding compound in order to protect it from electrical deterioration due to various causes such as corrosion to the outside and to promote mechanical stability.
즉, 상기 봉지재(40)는 상기 섭스트레이트(10)의 관통공(15) 내측 및 상기 제1반도체칩(1)이 이루는 소정의 이격 공간 내측에 충진됨으로써, 그 내측에 위치하는 접속수단(20)을 보호하도록 되어 있다.That is, the encapsulant 40 is filled in the through-hole 15 of the substrate 10 and in a predetermined spaced space formed by the first semiconductor chip 1, thereby connecting the connecting means positioned inside the ( 20) to protect.
따라서, 도2a에 도시된 반도체패키지(101)와 같이 제1반도체칩(1)의 제2면(1b)중 일정 영역과 그 측면 및 제2반도체칩(2)의 제2면(2b)과 그 측면은 외부 공기중으로 직접 노출되고, 따라서 반도체칩의 방열 성능이 향상된다.Therefore, as in the semiconductor package 101 shown in FIG. 2A, a predetermined region, a side surface of the second surface 1b of the first semiconductor chip 1, and a second surface 2b of the second semiconductor chip 2 are formed. The side surface is directly exposed to the outside air, thereby improving the heat dissipation performance of the semiconductor chip.
또한, 도2b에 도시된 반도체패키지(102)와 같이 상기 섭스트레이트(10)는 제1반도체칩(1)의 외주연쪽으로 더 연장되어 형성될 수도 있으며, 이때에는 보다 많은 랜드(12b)의 형성이 가능하다. 따라서, 보다 많은 수의 입출력패드(1c,2c)를 갖는 반도체칩을 수용할 수 있게 된다.In addition, as shown in the semiconductor package 102 of FIG. 2B, the substrate 10 may be further extended toward the outer circumferential side of the first semiconductor chip 1, and in this case, more lands 12b are formed. This is possible. Therefore, it is possible to accommodate semiconductor chips having a larger number of input / output pads 1c and 2c.
더불어, 도2c에 도시된 반도체패키지(103)와 같이 상기 제1반도체칩(1)의 제2면(1b)과 제2반도체칩(2)의 측면 사이도 봉지재(40)로 봉지함으로써 전체적인 반도체패키지(103)의 기계적인 안정성을 도모할 수 있다. 그러나, 이때에도 상기 제2반도체칩(2)의 제2면(2b)은 봉지재(40) 외측으로 노출되도록 함으로써 방열 성능이 저하되지 않토록 함이 바람직하다.In addition, like the semiconductor package 103 shown in FIG. 2C, an encapsulant 40 is also encapsulated between the second surface 1b of the first semiconductor chip 1 and the side surface of the second semiconductor chip 2. Mechanical stability of the semiconductor package 103 can be achieved. However, even at this time, the second surface 2b of the second semiconductor chip 2 is preferably exposed to the outside of the encapsulant 40 so that the heat dissipation performance is not deteriorated.
마지막으로, 상기 섭스트레이트(10)에 형성된 랜드(12b)에는 도전성볼(50)이 융착되어, 차후 마더보드에 실장 가능한 형태로 되어 있다. 상기 도전성볼(50)은 주석(Sn)과 납(Pb)으로 이루어진 솔더볼을 이용함이 바람직하다. 또한, 상기 도전성볼(50)의 크기는 상기 봉지재(40)에 의해 간섭받지 않고 마더보드에 실장 가능하도록 상기 봉지재(40)의 돌출된 높이보다 큰 것을 이용함이 바람직하다. 다른말로 하면, 상기 봉지재(40)는 상기 도전성볼(50)의 하부면보다 높은 면에 봉지되도록 한다.Finally, the conductive balls 50 are fused to the lands 12b formed on the substrates 10, and are formed to be mounted on the motherboard later. The conductive ball 50 is preferably using a solder ball made of tin (Sn) and lead (Pb). In addition, the size of the conductive ball 50 is preferably used that is larger than the protruding height of the encapsulant 40 to be mounted on the motherboard without being interfered by the encapsulant 40. In other words, the encapsulant 40 is encapsulated in a surface higher than the lower surface of the conductive ball 50.
도3은 본 발명에 의한 다른 반도체패키지(104)를 도시한 단면도이며, 이는 도2a 내지 도2c에서 설명한 반도체패키지(101,102,103)와 유사하므로, 그 차이점만을 설명하기로 한다.3 is a cross-sectional view showing another semiconductor package 104 according to the present invention, which is similar to the semiconductor packages 101, 102 and 103 described with reference to FIGS. 2A to 2C, and only the differences will be described.
상기 도2a 내지 도2c에서 설명한 반도체패키지(101,102,103)는 제1반도체칩(1)의 제2면(1b)에 제2반도체칩(2)이 접착되어 있으나, 도3에 도시된 반도체패키지(104)는 제2반도체칩(2)이 섭스트레이트(10)에 접착된 것이 특징이다.In the semiconductor packages 101, 102, and 103 described with reference to FIGS. 2A through 2C, the second semiconductor chip 2 is adhered to the second surface 1b of the first semiconductor chip 1, but the semiconductor package 104 shown in FIG. ) Is characterized in that the second semiconductor chip 2 is bonded to the substrate 10.
즉, 제2반도체칩(2)은 제1면(2a)과 제2면(2b)을 가지고, 상기 제2면(2b) 중앙에 다수의 입출력패드(2c)가 형성되어 있으며(센터패드형 반도체칩), 상기 제2면(2b)이 제1반도체칩(1)에 접착된 섭스트레이트(10)의 제1면(10a)에 접착되어 있다.That is, the second semiconductor chip 2 has a first surface 2a and a second surface 2b, and a plurality of input / output pads 2c are formed at the center of the second surface 2b (center pad type). Semiconductor chip) and the second surface 2b are bonded to the first surface 10a of the substrate 10 bonded to the first semiconductor chip 1.
한편, 서로 마주하는 제1반도체칩(1)의 외측으로는 섭스트레이트(10)가 약간 더 연장되어 있으며, 그 연장된 부분으로는 본드핑거(12a)가 노출되어 있다. 따라서, 상기 제2반도체칩(2)의 입출력패드(2c)는 상기 노출된 본드핑거(12a)와 도전성와이어와 같은 접속수단(20)에 의해 상호 접속되어 있다. 물론, 상기 제1반도체칩(1) 사이의 이격 공간은 봉지재(40)로 봉지됨으로써 상기 접속수단(20) 역시 외부 환경으로부터 보호되도록 되어 있다.On the other hand, the substrate 10 slightly extends to the outside of the first semiconductor chip 1 facing each other, and the bond finger 12a is exposed to the extended portion. Therefore, the input / output pads 2c of the second semiconductor chip 2 are connected to each other by the exposed bond finger 12a and the connecting means 20 such as conductive wires. Of course, the separation space between the first semiconductor chip 1 is sealed by the encapsulant 40 so that the connection means 20 is also protected from the external environment.
또한, 상기 제2반도체칩(2)의 제1면(2a) 역시 섭스트레이트(10)의 관통공(15) 및 그 주변을 봉지하는 봉지재(40) 외측으로 노출되어 방열성능이 향상되도록 되어 있다.In addition, the first surface 2a of the second semiconductor chip 2 is also exposed to the outside of the encapsulant 40 encapsulating the through hole 15 and the periphery of the substrate 10 to improve heat dissipation performance. have.
여기서, 상기 제2반도체칩(2)에는 백그라인딩 기술을 적용함이 바람직하다. 즉, 도전성볼(50)이 위치된 면과 같은 면에 제2반도체칩(2)이 위치됨으로써, 상기 제2반도체칩(2)의 두께가 두꺼우면 상기 도전성볼(50)이 마더보드에 용이하게 실장되지 않기 때문이다. 따라서, 상기 제2반도체칩(2)은 제1면(2a)을 일정두께 이상 그라인딩함으로써, 전체적인 두께를 최소화한 후, 섭스트레이트(10)에 부착되도록 함이 바람직하다. 또한, 실장시에는 상기 제2반도체칩(2)의 제1면(2a)에 솔더 페이스트를 부착하여 상기 제2반도체칩(2) 역시 마더보드에 실장되도록 하여 그 방열 성능을 더욱 향상시킬 수도 있다.Here, it is preferable to apply a back grinding technology to the second semiconductor chip 2. That is, since the second semiconductor chip 2 is positioned on the same surface on which the conductive ball 50 is located, the conductive ball 50 is easily formed on the motherboard when the thickness of the second semiconductor chip 2 is thick. Because it is not mounted. Accordingly, the second semiconductor chip 2 is preferably ground to the substrate 10 by minimizing the overall thickness by grinding the first surface 2a by a predetermined thickness or more. In addition, during mounting, a solder paste may be attached to the first surface 2a of the second semiconductor chip 2 so that the second semiconductor chip 2 may also be mounted on a motherboard to further improve its heat dissipation performance. .
도4는 본 발명에 의한 또다른 반도체패키지(105)를 도시한 단면도이며, 이것 역시 도2a 내지 도2c에서 설명한 반도체패키지(101,102,103)와 유사하므로, 그 차이점만을 설명하기로 한다.4 is a cross-sectional view showing another semiconductor package 105 according to the present invention, which is also similar to the semiconductor packages 101, 102 and 103 described with reference to FIGS. 2A to 2C, and only the differences will be described.
상기 도2a 내지 도2c에서 설명한 반도체패키지(101,102,103)는 제1반도체칩(1)이 센터패드형이었지만, 도4에 도시된 반도체패키지(105)는 제1반도체칩(1)이 엣지패드형인 것인 특징이다.In the semiconductor packages 101, 102, and 103 described with reference to FIGS. 2A through 2C, the first semiconductor chip 1 has a center pad type, but the semiconductor package 105 shown in FIG. 4 has the first semiconductor chip 1 having an edge pad type. It is a feature.
즉, 상기 제1반도체칩(1)은 대략 평면인 제1면(1a)과 제2면(1b)을 가지고, 상기 제1면(1a)의 가장 자리에는 다수의 입출력패드(1c)가 형성되어 있다. 또한, 섭스트레이트(10)는 상기 가장자리에 형성된 입출력패드(1c)를 회피하여 그 내측 영역에 접착되어 있다. 물론, 섭스트레이트(10)의 본드핑거(12a)는 상기 입출력패드(1c)와 근접하여 형성되어 있고, 상기 본드핑거(12a)에 연결되어서는 다수의 랜드(12b)가 형성되어 있다.That is, the first semiconductor chip 1 has a first surface 1a and a second surface 1b which are substantially planar, and a plurality of input / output pads 1c are formed at the edge of the first surface 1a. It is. In addition, the substrate 10 is bonded to its inner region while avoiding the input / output pad 1c formed at the edge. Of course, the bond finger 12a of the substrate 10 is formed close to the input / output pad 1c, and a plurality of lands 12b are formed to be connected to the bond finger 12a.
또한, 상기 제1반도체칩(1)의 가장자리에 형성된 입출력패드(1c)는 모두 접속수단(20)(예를 들면, 도전성와이어)에 의해 섭스트레이트(10)의 본드핑거(12a)에 접속되어 있고, 상기 접속수단(20) 및 제1반도체칩(1)의 측면을 포함하여 제2면(1b)은 모두 봉지재(40)로 봉지되어 있다. 이때에도, 상기 제2반도체칩(2)의 제2면(2b)은 상기 봉지재(40) 외측으로 노출되도록 함이 바람직하다.In addition, all of the input / output pads 1c formed at the edge of the first semiconductor chip 1 are connected to the bond fingers 12a of the substrate 10 by the connecting means 20 (for example, conductive wires). The second surface 1b, including the side surface of the connecting means 20 and the first semiconductor chip 1, is all encapsulated with an encapsulant 40. In this case, the second surface 2b of the second semiconductor chip 2 may be exposed to the outside of the encapsulant 40.
이상에서와 같이 본 발명은 비록 상기의 실시예에 한하여 설명하였지만 여기에만 한정되지 않으며, 본 발명의 범주 및 사상을 벗어나지 않는 범위내에서 여러가지로 변형된 실시예도 가능할 것이다.As described above, although the present invention has been described with reference to the above embodiments, the present invention is not limited thereto, and various modified embodiments may be possible without departing from the scope and spirit of the present invention.
따라서, 본 발명에 의한 반도체패키지에 의하면, 센터패드형 반도체칩을 어레이시킴과 동시에 스택하여 고기능, 고집적화된 반도체패키지를 구현할 수 있는 효과가 있다.Therefore, according to the semiconductor package according to the present invention, the center pad-type semiconductor chip can be arrayed and stacked, thereby achieving a high-function, highly integrated semiconductor package.
또한, 센터패드형 반도체칩을 어레이시킴과 동시에 엣지패드형 반도체칩을 스택할 수 있어, 다양한 종류의 반도체칩을 혼합하여 어레이 및 스택할 수 있는 효과도 있다.In addition, since the center pad semiconductor chip can be arrayed and the edge pad semiconductor chip can be stacked, various types of semiconductor chips can be mixed and arrayed and stacked.
또한, 반도체패키지의 넓이가 칩싸이즈 크기로 됨으로써, 초소형의 반도체패키지를 제공하는 효과가 있다.In addition, since the width of the semiconductor package is the size of the chip size, there is an effect of providing a very small semiconductor package.
더불어, 스택된 반도체칩의 일면 또는 어레이된 반도체칩의 일정 영역을 외부로 직접 노출시킴으로써 방열 성능을 향상시킬 수 있는 효과가 있다.In addition, the heat dissipation performance may be improved by directly exposing a surface of the stacked semiconductor chip or a predetermined region of the arrayed semiconductor chip to the outside.
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